“FIB/SEM applied to quantitative 3D analysis of precipitates in Ni-Ti”. Cao S, Nishida M, Schryvers D, Diffusion and defect data : solid state data : part B : solid state phenomena 172/174, 1284 (2011). http://doi.org/10.4028/www.scientific.net/SSP.172-174.1284
Abstract: Ni4Ti3 precipitates with a heterogeneous distribution growing in a polycrystalline Ni50.8Ti49.2 alloy have been investigated in a Dual-Beam FIB/SEM system. The volume ratio, mean volume, central plane diameter, thickness, aspect ratio and sphericity of the precipitates in the grain interior as well as near to the grain boundary were measured or calculated. The morphology of the precipitates was classified according to the Zingg scheme. The multistage martensitic transformation occurring in these kinds of samples is interpreted in view of the data of this heterogeneous microstructure of matrix and precipitates.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
DOI: 10.4028/www.scientific.net/SSP.172-174.1284
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“Fine structure of CMR perovskites by HREM and CBEM”. Van Tendeloo G, Richard O, Schuddinck W, Hervieu M, Electron microscopy: vol. 1 , 383 (1998)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“First-principles calculations of 002 structure factors for electron scattering in strained InxGa1-xAs”. Rosenauer A, Schowalter M, Glas F, Lamoen D, 107, 151 (2005)
Keywords: A1 Journal article; Electron Microscopy for Materials Science (EMAT);
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“From the lattice measurements of the austenite and the martensite cells to the macroscopic mechanical behavior of shape memory alloys”. Lexcellent C, Vivet A, Bouvet C, Blanc P, Satto C, Schryvers D, Journal de physique: 4 11, 317 (2001)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“HREM imaging analysis in the study of pretransition and nucleation phenomena in alloys (Invited)”. Schryvers D, Van Tendeloo G, van Landuyt J, Le Tanner, , 659 (1994)
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
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“HREM investigation of a Fe/GaN/Fe tunnel junction”. Nistor L, Bender H, van Landuyt J, Nemeth S, Boeve H, De Boeck J, Borghs G, Institute of physics conference series
T2 –, Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, Univ of Oxford, Oxford, England , 53 (2001)
Abstract: The structure of Fe/GaN/Fe ferromagnetic electrodes is studied by high resolution transmission electron microscopy. The layers grow epitaxially on the GaAs substrate with the top Fe layer 90degrees rotated compared to the bottom one. The interfaces are quite rough. There is an indication of the possible occurrence of Fe3GaAs formation on the GaAs interface.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“HREM investigation of La(1-x)Ca(x)MnO3-delta thin films”. Lebedev O, Van Tendeloo G, Amelinckx S, Leibold B, Habermeier HU, , 517 (1998)
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
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“HREM investigation of La1-xCaxMnO3- thin films”. Lebedev OI, Van Tendeloo G, Amelinckx S, Leibold B, Habermeier H-U, Electron microscopy: vol. 2 , 517 (1998)
Keywords: A3 Journal article; Electron microscopy for materials research (EMAT)
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“HREM of defects in cubic boron nitride single crystals”. Nistor LC, van Landuyt J, Dincã, G, , 695 (1998)
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
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“HREM study of Rb6C60 and helical shaped carbon nanotubules”. Bernaerts D, Zhang X, Zhang X, Van Tendeloo G, Vanlanduyt J, Amelinckx S, Sciences , 305 (1994)
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
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“Imaging from atomic structure to electronic structure”. Xu Q, Zandbergen HW, van Dyck D, Micron 43, 524 (2012). http://doi.org/10.1016/j.micron.2011.10.024
Abstract: This paper discusses the possibility of retrieving the electron distribution (with highlighted valence electron distribution information) of materials from recorded HREM images. This process can be achieved by solving two inverse problems: reconstruction of the exit wave and reconstruction of the electron distribution from exit waves. The first inverse problem can be solved using a focal series reconstruction method. We show that the second inverse problem can be solved by combining a series of exit waves recorded at different thickness conditions. This process is designed based on an improved understanding of the dynamical scattering process. It also explains the fundamental difficulty of obtaining the valence electron distribution information and the basis of our solution.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 1.98
DOI: 10.1016/j.micron.2011.10.024
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“The influence of crystal thickness on the image tone”. van Renterghem W, Schryvers D, van Landuyt J, van Roost C, de Keyzer R, Journal of imaging science 47, 133 (2003)
Abstract: It is known that the neutral image tone of a developed photographic film becomes brownish when the thickness of the original silver halide tabular crystals is reduced. We investigate by electron microscopy to what extent the silver filament structure has changed and how it induces the shift in image tone. Therefore, two samples of AgBr {111} tabular crystals with average thicknesses of 160 nm and 90 nm respectively, are compared. It is shown that the dimensions and defect structure of the filaments are comparable, but that the 90 nm crystals result in a more widely spaced structure, which explains the shift in image tone on a qualitative level. The influence of the addition of an image toner, i.e., phenylmercaptotetrazole, on the filament structure is also investigated. An even more open filament structure of longer, but smaller filaments was observed.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 0.348
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“Influence of the characteristics of the STM-tip on the electroluminescence spectra”. Croitoru MD, Gladilin VN, Fomin VM, Devreese JT, Kemerink M, Koenraad PM, Sauthoff K, Wolter JH, Physica. E: Low-dimensional systems and nanostructures 27, 13 (2005). http://doi.org/10.1016/j.physe.2004.10.002
Keywords: A1 Journal article; Theory of quantum systems and complex systems; Condensed Matter Theory (CMT); Electron microscopy for materials research (EMAT)
Impact Factor: 2.221
DOI: 10.1016/j.physe.2004.10.002
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“Influence of twinning on the morphology of AgBr and AgCl microcrystals”. van Renterghem W, Goessens C, Schryvers D, van Landuyt J, Bollen D, de Keyzer R, van Roost C, The journal of imaging science and technology 45, 349 (2001)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.348
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“Laser thermotreatment of the SnO2layers”. Rembeza SI, Loginov VA, Svistova TV, Podkopaeva OI, Rembeza ES, van Landuyt J, Eurosensors XII, vols 1 and 2 , 481 (1998)
Abstract: The optical and electrical properties and pi ase composition of magnetron sputtered antimony-doped SnOx thin films are investigated before and after laser thermotreatment The temperature dependencies on mobility and concentration of free charges are measured by Van der Pauw method. The gas sensitivity of SnOx has been measured before and after laser thermotreatment.
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
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“Layered structures accomodating stoichiometry in M2X2O7 systems, as seen by diffraction and HREM”. Nihoul G, Leroux C, Cesari C, Van Tendeloo G, Electron microscopy: vol. 2 , 295 (1998)
Keywords: A3 Journal article; Electron microscopy for materials research (EMAT)
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“The local structure of YBCO based materials by TEM”. Van Tendeloo G, Lebedev OI, Verbist K, Abakumov AM, Shpanchenko RV, Antipov EV, Blank DHA Kluwer Academic, Dordrecht, page 11 (1999).
Keywords: H1 Book chapter; Electron microscopy for materials research (EMAT)
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“Loss rate of a plasticizer in a nylon matrix calculated using macroscopic reaction-diffusion kinetics”. Zhang M-L, March NH, Peeters A, van Alsenoy C, Howard I, Lamoen D, Leys F, Journal Of Applied Physics 93, 1525 (2003). http://doi.org/10.1063/1.1535230
Keywords: A1 Journal article; Electron Microscopy for Materials Science (EMAT);
Impact Factor: 2.068
DOI: 10.1063/1.1535230
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“Measurement of the mean inner potential of ZnO nanorods by transmission electron holography”. Müller E, Kruse P, Gerthsen D, Schowalter M, Rosenauer A, Lamoen D, Kling R, Microscopy of Semiconducting Materials 107SPRINGER PROCEEDINGS IN PHYSICS, 303 (2005)
Keywords: A1 Journal article; Electron Microscopy for Materials Science (EMAT)
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“Mécanismes de la non-stoechiométrie dans les nouveaux supraconducteurs à, haute Tc”. Hervieu M, Michel C, Martin C, Huvé, M, Van Tendeloo G, Maignan A, Pelloquin D, Goutenoire F, Raveau B, Journal de physique: 3: applied physics, materials science, fluids, plasma and instrumentation 4, 2057 (1994)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“Microstructural investigation of a La1.9Sr0.1CuO4 thin film grown by MBE under a large compressive strain”. Seo JW, Perret J, Fompeyrine J, Loquet J-P, Van Tendeloo G, Electron microscopy: vol. 2 , 287 (1998)
Keywords: A3 Journal article; Electron microscopy for materials research (EMAT)
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“Microstructural investigation of La1.9Sr0.1CuO4 thin film grown by MBE”. Seo JW, Perret J, Fompeyrine J, Van Tendeloo G, Loquet J-P s.l., page 300 (1998).
Keywords: H3 Book chapter; Electron microscopy for materials research (EMAT)
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“Microstructural mechanism of development in photothermographic materials”. Potapov PL, Schryvers D, Strijckers H, van Roost C, The journal of imaging science and technology 47, 115 (2003)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.348
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“A microstructural study of the thermal stability of atomic layer deposited Al2O3 thin films”. Nistor LC, Richard O, Zhao O, Bender H, Stesmans A, Van Tendeloo G, Institute of physics conference series
T2 –, Microscopy of semiconducting materials , 397 (2003)
Abstract: The thermal stability of amorphous Al2O3 films (similar to8 and 80 nut thick) deposited by atomic layer deposition on HF-last and thin SiO2 covered (001) Si substrates is studied by transmission electron microscopy. The layers are in- and ex-situ annealed in the same temperature range.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“Microstructure of α-axis oriented YBCO films on SrTiO3 substrates using a new template layer La4BaCu5O13”. Prouteau C, Verbist K, Hamet JF, Mercey B, Hervieu M, Raveau B, Van Tendeloo G, Physica: C : superconductivity 288, 231 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.404
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“Microstructure of artificial [100] 45 degrees twist grain boundaries in YBa2Cu3O7-delta”. Verbist K, Tafuri F, Granozio FM, Di Chiara S, Van Tendeloo G, Electron Microscopy 1998, Vol 2: Materials Science 1 , 593 (1998)
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
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“Microstructure of artificial [100] 45°, twist grain boundaries in YBa2Cu3O7-”. Verbist K, Tafuri F, Miletto Granozio F, di Chiara S, Van Tendeloo G, Electron microscopy: vol. 2 , 593 (1998)
Keywords: A3 Journal article; Electron microscopy for materials research (EMAT)
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“Microstructure of CuXMo6S8 Chevrel phase thin films on R-plane sapphire”. Richard O, Van Tendeloo G, Lemée N, le Lannic J, Guilloux-Viry M, Perrin A, Journal of electron microscopy 49, 493 (2000). http://doi.org/10.1093/oxfordjournals.jmicro.a023834
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.9
DOI: 10.1093/oxfordjournals.jmicro.a023834
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“Microstructure of YBa2Cu3O7-\delta Josephson junctions in relation to their properties”. Verbist K, Lebedev OI, Verhoeven MAJ, Winchern R, Rijnders AJHM, Blank DHA, Tafuri F, Bender H, Van Tendeloo G, Superconductor science and technology 11, 13 (1998). http://doi.org/10.1088/0953-2048/11/1/004
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.878
DOI: 10.1088/0953-2048/11/1/004
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“Modified atomic scattering amplitudes and size effects on the 002 and 220 electron structure factors of multiple Ga1-xInxAs/GaAs quantum wells”. Titantah JT, Lamoen D, Schowalter M, Rosenauer A, Journal of applied physics 105, 084310 (2009). http://doi.org/10.1063/1.3115407
Abstract: The modified atomic scattering amplitudes (MASAs) of mixed Ga<sub>1-x</sub>In<sub>x</sub>As, GaAs<sub>1-x</sub>N<sub>x</sub>, and InAs<sub>1-x</sub>N<sub>x</sub> are calculated using the density functional theory approach and the results are compared with those of the binary counterparts. The MASAs of N, Ga, As, and In for various scattering vectors in various chemical environments and in the zinc-blende structure are compared with the frequently used Doyle and Turner values. Deviation from the Doyle and Turner results is found for small scattering vectors (s<0.3 Å<sup>-1</sup>) and for these scattering vectors the MASAs are found to be sensitive to the orientation of the scattering vector and on the chemical environment. The chemical environment sensitive MASAs are used within zero pressure classical Metropolis Monte Carlo, finite temperature calculations to investigate the effect of well size on the electron 002 and 220 structure factors (SFs). The implications of the use of the 002 (200) spot for the quantification of nanostructured Ga<sub>1-x</sub>In<sub>x</sub>As systems are examined while the 220 SF across the well is evaluated and is found to be very sensitive to the in-plane static displacements.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.068
DOI: 10.1063/1.3115407
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