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“Characteristic mosaic texture related to orderingin AuCu-9at.%Ag pseudobinary alloy”. Yasuda K, Hisatsune K, Udoh K, Tanaka Y, Van Tendeloo G, van Landuyt J, Dentistry in Japan 29, 91 (1992)
Keywords: A3 Journal article; Electron microscopy for materials research (EMAT)
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“Characterization of crystal defects and analysis of iodide distribution in mixed tabular silver halide grains by conventional transmission electron microscopy, X-ray diffractometry and back-scattered electron imaging”. Goessens C, Schryvers D, van Landuyt J, Amelinckx S, Geuens I, Gijbels R, Jacob W, Verbeeck A, de Keyzer R, (1991)
Keywords: P3 Proceeding; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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“Conventional and HREM study of structural defects in nanostructured silver halides”. Schryvers D, Goessens C, van Renterghem W, van Landuyt J, de Keyzer R, , 1 (1998)
Keywords: P3 Proceeding; Electron microscopy for materials research (EMAT)
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“Defects in AgCl and AgBr(100) tabular crystals studied by TEM”. van Renterghem W, Goessens C, Schryvers D, van Landuyt J, Verrept P, Bollen D, van Roost C, de Keyzer R, , 6 (1998)
Keywords: P3 Proceeding; Electron microscopy for materials research (EMAT)
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“Electron microscopy of fullerenes and fullerene related structures”. Van Tendeloo G, van Landuyt J, Amelinckx S, , 498 (1994)
Keywords: P3 Proceeding; Electron microscopy for materials research (EMAT)
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“Electron microscopy of interfaces in new materials”. Van Tendeloo G, Goessens C, Schryvers D, van Haverbergh J, de Veirman A, van Landuyt J s.l., page 200 (1991).
Keywords: H3 Book chapter; Electron microscopy for materials research (EMAT)
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Amelinckx S, van Dyck D, van Landuyt J, Van Tendeloo G (1997) Electron microscopy: principles and fundamentals. Vch, Weinheim
Keywords: ME1 Book as editor or co-editor; Electron microscopy for materials research (EMAT); Vision lab
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“Formation of diamond nanocrystals in laser-irradiated amorphous carbon films”. Nistor LC, van Landuyt J, Ralchenko VG, Kononenko TV, Obraztsova ED, Strelnitsky VE, International Conference on the New Diamond Science and Technology 4, 25 (1994)
Keywords: P3 Proceeding; Electron microscopy for materials research (EMAT)
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“Graphene textures: tubules and whiskers related to fullerene crystallography”. Van Tendeloo G, Amelinckx S, van Landuyt J, Acta crystallographica: section A: foundations of crystallography 49, 355 (1993)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.307
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Amelinckx S, van Dyck D, van Landuyt J, Van Tendeloo G (1997) Handbook of microscopy: applications in materials science, solid-state physics and chemistry. Vch, Weinheim
Keywords: ME1 Book as editor or co-editor; Electron microscopy for materials research (EMAT); Vision lab
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“High-resolution electron microscopy for semiconducting materials science”. van Landuyt J, Vanhellemont J Elsevier, Amsterdam, page 1109 (1994).
Keywords: H3 Book chapter; Electron microscopy for materials research (EMAT)
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“How to interpret short-range order HREM images”. De Meulenaere P, Van Tendeloo G, van Landuyt J, (1996)
Keywords: P3 Proceeding; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
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“HREM for characterisation of nanoscale microstructures”. van Landuyt J, Van Tendeloo G, , 15 (1998)
Keywords: P3 Proceeding; Electron microscopy for materials research (EMAT)
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“HREM imaging analysis in the study of pretransition and nucleation phenomena in alloys”. Schryvers D, Van Tendeloo G, van Landuyt J, Tanner LE, Icem 13, 659 (1994)
Keywords: A3 Journal article; Electron microscopy for materials research (EMAT)
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“HREM study of Rb6C60 and helical carbon nanotubules”. Bernaerts D, Zhang XB, Zhang XF, Van Tendeloo G, van Landuyt J, Amelinckx S, Icem 13, 305 (1994)
Keywords: A3 Journal article; Electron microscopy for materials research (EMAT)
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“In situ HREM study of electron irradiation effects in AgCl microcrystals”. Goessens C, Schryvers D, de Keyzer R, van Landuyt J Eurem 92, Granada, page 646 (1992).
Keywords: H3 Book chapter; Electron microscopy for materials research (EMAT)
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“Intrinsic point defect clustering in Si: a study by HVEM and HREM in situ electron irradiation”. Fedina L, Gutakovskii A, Aseev A, van Landuyt J, Vanhellemont J Kluwer Academic, s.l., page 63 (1997).
Keywords: H3 Book chapter; Electron microscopy for materials research (EMAT)
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“Ion beam synthesis of β-SiC at 9500C and structural characterization”. Frangis N, Nejim A, Hemment PLF, Stoemenos J, van Landuyt J, Nuclear instruments and methods in physics research B112, 325 (1996)
Keywords: A3 Journal article; Electron microscopy for materials research (EMAT)
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“Methods of structural analysis of modulated structures and quasicrystals”. van Landuyt J, Kuypers S, van Heurck C, Van Tendeloo G, Amelinckx S s.l., page 205 (1993).
Keywords: H3 Book chapter; Electron microscopy for materials research (EMAT)
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“The morphology, structure and texture of carbon nanotubes: an electron microscopy study”. Amelinckx S, Bernaerts D, Van Tendeloo G, van Landuyt J, Lucas AA, Mathot M, Lambin P, , 515 (1995)
Keywords: P3 Proceeding; Electron microscopy for materials research (EMAT)
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“Precipitation behavior in Cu-Co alloy”. Takeda M, Shinohara G, Yamada H, Yoshida S, van Landuyt J, Hashimoto H, , 205 (1998)
Keywords: P3 Proceeding; Electron microscopy for materials research (EMAT)
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“Structural aspects of carbon nanotubes”. Bernaerts D, Amelinckx S, Zhang XB, Van Tendeloo G, van Landuyt J, , 551 (1995)
Keywords: P3 Proceeding; Electron microscopy for materials research (EMAT)
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“Superlattice variants in Sr2CuO2(CO3): an electron microscopy study”. Milat O, Van Tendeloo G, van Landuyt J, Amelinckx S, Acta crystallographica: section A: foundations of crystallography 49, 357 (1993)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.307
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“Een tempel voor elektronenmicroscopie “kijken naar atomen””. van Landuyt J, Fonds informatief 38, 13 (1998)
Keywords: A3 Journal article; Electron microscopy for materials research (EMAT)
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“A temperature study of mixed AgBr-AgBrI tabular crystals”. Goessens C, Schryvers D, van Landuyt J, Geuens I, Gijbels R, Jacob W, de Keyzer R, , 36 (1992)
Keywords: P3 Proceeding; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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“Accurate infrared absorption measurement of interstitial and precipitated oxygen in p+ silicon wafers”. De Gryse O, Clauws P, Rossou L, van Landuyt J, Vanhellemont J, Microelectronic engineering 45, 277 (1999). http://doi.org/10.1016/S0167-9317(99)00180-X
Abstract: A novel infrared absorption method has been developed to measure [he interstitial oxygen concentration in highly doped silicon. Thin samples of the order of 10-30 mu m are prepared in an essentially stress-free state without changing the state of the crystal. The oxygen concentration is then determined by measuring the height of the 1136-cm(-1) absorption peak due to interstitial oxygen at 5.5 K. The obtained results on as-grown samples are compared with those from gas fusion analysis. The precipitated oxygen concentration in annealed samples is also determined with the new method. It will be shown that the interstitial oxygen concentration in highly doped silicon can be determined with high accuracy and down to concentrations of 10(17) cm(-3). (C) 1999 Elsevier Science B.V. All rights reserved.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 1.806
DOI: 10.1016/S0167-9317(99)00180-X
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“Characterisation of the local stress induced by shallow trench isolation and CoSi2 silicidation”. Stuer C, Steegen A, van Landuyt J, Bender H, Maex K, Institute of physics conference series , 481 (2001)
Abstract: With further down-scaling below 0.25mum technologies, CoSi2 is replacing TiSi2 because of its superior formation chemistry on narrow lines and favourable stress behaviour. Shallow trench isolation (STI) is used as the isolation technique in these technologies. In this study, convergent beam electron diffraction (CBED) measurements and finite element modelling (FEM) are performed to evaluate the local stress components in the silicon substrate, induced in STI structures with a 45 nm or a 85 nm CoSi2 silicidation. High compressive stresses in the active area and tensile stress around the trench corners are observed.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“Charcaterization by high-resolution transmission electron microscopy”. van Landuyt J, Van Tendeloo G Stt, Den Haag, page 187 (1998).
Keywords: H3 Book chapter; Electron microscopy for materials research (EMAT)
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“Chemical and structural analysis of etching residue layers in semiconductor devices with energy filtering transmission electron microscopy”. Hens S, van Landuyt J, Bender H, Boullart W, Vanhaelemeersch S, Materials science in semiconductor processing 4, 109 (2001). http://doi.org/10.1016/S1369-8001(00)00147-5
Abstract: The use of an energy-filtering held emission gun transmission electron microscope (CM30 FEG Ultratwin) allows, apart from imaging morphologies down to nanometer scale, the fast acquisition of high-resolution element distributions. Electrons that have lost energy corresponding to characteristic inner-shell loss edges are used to form the element maps. The production of Ultra Large-Scale Integration (ULSI) devices with dimensions below 0.25 mum requires among others the formation of a multilayer metallization scheme by means of repeatedly applying the deposition and etching of dielectrics and metals. In this work the evolution of the surface chemical species on etched Al lines in a post-etch cleaning process has been investigated by energy filtering transmission electron microscopy, with the aim to understand the role of each process step on the removal of the etching residues. (C) 2001 Elsevier Science Ltd. All rights reserved.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 2.359
DOI: 10.1016/S1369-8001(00)00147-5
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“Chemical and structural characterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy and transmission electron microscopy”. De Gryse O, Clauws P, Vanhellemont J, Lebedev O, van Landuyt J, Simoen E, Claeys C, , 183 (2002)
Abstract: Infrared absorption spectra of oxygen precipitates in boron doped silicon with a boron concentration between 10(17) and 10(19) cm(-3) are analyzed, applying the spectral function theory of the composite precipitates. The aspect ratio of the platelet precipitates has been determined by transmission electron microscopy measurements. Our analysis shows that in samples with moderate doping levels (<10(18) B cm(-3)) SiOgamma precipitates are formed with stoichiometry as in the lightly doped case. In the heavily (>10(18) cm(-3)) boron doped samples, however, the measured spectra of the precipitates are consistent with a mixture of SiO2 and B2O3. with a volume fraction of B2O3 as high as 0.41 in the most heavily doped case.
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
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