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	“The role of Al on Ohmic contact formation on n-type GaN and AlGaN/GaN”. van Daele B, Van Tendeloo G, Ruythooren W, Derluyn J, Leys M, Germain M, Applied physics letters 87, 061905 (2005). http://doi.org/10.1063/1.2008361 Keywords: A1 Journal article; Electron microscopy for materials research (EMAT) Impact Factor: 3.411 Times cited: 57 DOI: 10.1063/1.2008361 Additional Links: UA library record; WoS full record; WoS citing articles Permanent link \| Save citation: RTF PDF LaTeX \| Export record: BibTeX Endnote ISI RIS Word XML

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