|
Records |
Links |
|
Author |
Vereecke, G.; De Coster, H.; Van Alphen, S.; Carolan, P.; Bender, H.; Willems, K.; Ragnarsson, L.-A.; Van Dorpe, P.; Horiguchi, N.; Holsteyns, F. |
![goto web page (via DOI) doi](http://nano.uantwerpen.be/nanorefs/img/doi.gif)
|
|
Title |
Wet etching of TiN in 1-D and 2-D confined nano-spaces of FinFET transistors |
Type |
A1 Journal article |
|
Year |
2018 |
Publication |
Microelectronic engineering |
Abbreviated Journal |
|
|
|
Volume |
200 |
Issue |
|
Pages |
56-61 |
|
|
Keywords |
A1 Journal article; Engineering sciences. Technology; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
|
|
Abstract |
In the manufacturing of multi-Vt FinFET transistors, the gate material deposited in the nano-spaces left by the removed dummy gate must be etched back in mask-defined wafer areas. Etch conformality is a necessary condition for the control of under-etch at the boundary between areas defined by masking. We studied the feasibility of TiN etching by APM (ammonia peroxide mixture, also known as SC1) in nano-confined volumes representative of FinFET transistors of the 7 nm node and below, namely nanotrenches with 1-D confinement and nanoholes with 2-D confinement. TiN etching was characterized for rate and conformality using different electron microscopy techniques. Etching in closed nanotrenches was conformal, starting and progressing all along the 2-D seam, with a rate that was 38% higher compared to a planar film. Etching in closed nanoholes proved also to be conformal and faster than planar films, but with a delay to open the 1-D seam that seemed to depend strongly on small variations in the hole diameter. However, holes between the fins at the bottom of the removed dummy gate, are not circular and do present 2-D seams that should lend themselves for an easier start of conformal etching as compared to the circular nanoholes used in this study. Finally, to explain the higher etch rate observed in nano-confined features, concentrations of ions in nanoholes were calculated taking the overlap of electrostatic double layers (EDL) into account. With negatively charged TiN walls, as measured by streaming potential on planar films, ammonium was the dominant ion in nanoholes. As no chemical reaction proposed in the literature for TiN etching matched with this finding, we proposed that the formation of ammine complexes, dissolving the formed Ti oxide, was the rate-determining step. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis ![sorted by Thesis field, descending order (down)](img/sort_desc.gif) |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Wos |
000449134800010 |
Publication Date |
2018-09-21 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0167-9317 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
|
Times cited |
|
Open Access |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
UA @ admin @ c:irua:155414 |
Serial |
8757 |
|
Permanent link to this record |
|
|
|
|
Author |
Lin, S.; Shao, L.; Hui, C.; Song, Y.; Reddy, G.V.P.; Gielis, J.; Li, F.; Ding, Y.; Wei, Q.; Shi, P.; Reddy, G.V.P. |
![goto web page (via DOI) doi](http://nano.uantwerpen.be/nanorefs/img/doi.gif)
|
|
Title |
Why does not the leaf weight-area allometry of bamboos follow the 3/2-power law? |
Type |
A1 Journal article |
|
Year |
2018 |
Publication |
Frontiers in plant science |
Abbreviated Journal |
|
|
|
Volume |
9 |
Issue |
|
Pages |
583 |
|
|
Keywords |
A1 Journal article; Engineering sciences. Technology; Sustainable Energy, Air and Water Technology (DuEL) |
|
|
Abstract |
The principle of similarity (Thompson, 1917) states that the weight of an organism follows the 3/2-power law of its surface area and is proportional to its volume on the condition that the density is constant. However, the allometric relationship between leaf weight and leaf area has been reported to greatly deviate from the 3/2-power law, with the irregularity of leaf density largely ignored for explaining this deviation. Here, we choose 11 bamboo species to explore the allometric relationships among leaf area (A), density (ρ), length (L), thickness (T), and weight (W). Because the edge of a bamboo leaf follows a simplified two-parameter Gielis equation, we could show that A ∝ L2 and that A ∝ T2. This then allowed us to derive the density-thickness allometry ρ ∝ Tb and the weight-area allometry W ∝ A(b+3)/2 ≈ A9/8, where b approximates −3/4. Leaf density is strikingly negatively associated with leaf thickness, and it is this inverse relationship that results in the weight-area allometry to deviate from the 3/2-power law. In conclusion, although plants are prone to invest less dry mass and thus produce thinner leaves when the leaf area is sufficient for photosynthesis, such leaf thinning needs to be accompanied with elevated density to ensure structural stability. The findings provide the insights on the evolutionary clue about the biomass investment and output of photosynthetic organs of plants. Because of the importance of leaves, plants could have enhanced the ratio of dry material per unit area of leaf in order to increase the efficiency of photosynthesis, relative the other parts of plants. Although the conclusion is drawn only based on 11 bamboo species, it should also be applicable to the other plants, especially considering previous works on the exponent of the weight-area relationship being less than 3/2 in plants. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis ![sorted by Thesis field, descending order (down)](img/sort_desc.gif) |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Wos |
000431415100001 |
Publication Date |
2018-05-04 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
1664-462x |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
|
Times cited |
|
Open Access |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
UA @ admin @ c:irua:150948 |
Serial |
8758 |
|
Permanent link to this record |