“Strain accommodation through facet matching in La1.85Sr0.15CuO4/Nd1.85Ce0.15CuO4 ramp-edge junctions”. Hoek M, Coneri F, Poccia N, Renshaw Wang X, Ke X, Van Tendeloo G, Hilgenkamp H, APL materials 3, 086101 (2015). http://doi.org/10.1063/1.4927796
Abstract: Scanning nano-focused X-ray diffraction and high-angle annular dark-field scanning transmission electron microscopy are used to investigate the crystal structure of ramp-edge junctions between superconducting electron-doped Nd1.85Ce0.15CuO4 and superconducting hole-doped La1.85Sr0.15CuO4 thin films, the latter being the top layer. On the ramp, a new growth mode of La1.85Sr0.15CuO4 with a 3.3° tilt of the c-axis is found. We explain the tilt by developing a strain accommodation model that relies on facet matching, dictated by the ramp angle, indicating that a coherent domain boundary is formed at the interface. The possible implications of this growth mode for the creation of artificial domains in morphotropic materials are discussed.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 4.335
Times cited: 4
DOI: 10.1063/1.4927796
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“Strain and band edges in single and coupled cylindrical InAs/GaAs and InP/InGaP self-assembled quantum dots”. Tadić, M, Peeters FM, Janssens KL, Korkusinski M, Hawrylak P, Journal of applied physics 92, 5819 (2002). http://doi.org/10.1063/1.1510167
Abstract: A comparative study is made of the strain distribution in cylindrical InAs/GaAs and InP/InGaP self-assembled quantum dots as obtained from isotropic elasticity theory, the anisotropic continuum mechanical model, and from atomistic calculations. For the isotropic case, the recently proposed approach [J. H. Davies, J. Appl. Phys. 84, 1358 (1998)] is used, while the finite-element method, the valence force field method, and Stillinger-Weber potentials are employed to calculate the strain in anisotropic structures. We found that all four methods result in strain distributions of similar shapes, but with notable quantitative differences inside the dot and near the disk-matrix boundary. The variations of the diagonal strains with the height of the quantum dot, with fixed radius, as calculated from all models, are almost linear. Furthermore, the energies of the band edges in the two types of quantum dots are extracted from the multiband effective-mass theory by inserting the strain distributions as obtained by the four models. We demonstrated that all strain models produce effective potentials for the heavy and light holes which agree very well inside the dot. A negligible anisotropy of all normal strains in the (x,y) plane is found, which, providing the axial symmetry of the kinetic part of the multiband effective-mass Hamiltonian, justifies the use of the axial approximation. Strain propagation along the vertical direction is also considered with the aim to study the influence of strain on the electron coupling in stacks of quantum dots. We found that the interaction between the strain fields of the individual quantum dots makes the effective quantum wells for the electrons in the conduction band shallower, thereby counteracting the quantum mechanical coupling. (C) 2002 American Institute of Physics.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.068
Times cited: 73
DOI: 10.1063/1.1510167
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“Strain and band-mixing effects on the excitonic Aharonov-Bohm effect in In(Ga)As/GaAs ringlike quantum dots”. Arsoski VV, Tadić, MZ, Peeters FM, Physical review : B : condensed matter and materials physics 87, 085314 (2013). http://doi.org/10.1103/PhysRevB.87.085314
Abstract: Neutral excitons in strained axially symmetric In(Ga)As/GaAs quantum dots with a ringlike shape are investigated. Similar to experimental self-assembled quantum rings, the analyzed quantum dots have volcano-like shapes. The continuum mechanical model is employed to determine the strain distribution, and the single-band envelope function approach is adopted to compute the electron states. The hole states are determined by the axially symmetric multiband Luttinger-Kohn Hamiltonian, and the exciton states are obtained from an exact diagonalization. We found that the presence of the inner layer covering the ring opening enhances the excitonic Aharonov-Bohm (AB) oscillations. The reason is that the hole becomes mainly localized in the inner part of the quantum dot due to strain, whereas the electron resides mainly inside the ring-shaped rim. Interestingly, larger AB oscillations are found in the analyzed quantum dot than in a fully opened quantum ring of the same width. Comparison with the unstrained ringlike quantum dot shows that the amplitude of the excitonic Aharonov-Bohm oscillations are almost doubled in the presence of strain. The computed oscillations of the exciton energy levels are comparable in magnitude to the oscillations measured in recent experiments. DOI: 10.1103/PhysRevB.87.085314
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 18
DOI: 10.1103/PhysRevB.87.085314
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“Strain-engineered graphene through a nanostructured substrate : 1 : deformations”. Neek-Amal M, Peeters FM, Physical review : B : condensed matter and materials physics 85, 195445 (2012). http://doi.org/10.1103/PhysRevB.85.195445
Abstract: Using atomistic simulations we investigate the morphological properties of graphene deposited on top of a nanostructured substrate. Sinusoidally corrugated surfaces, steps, elongated trenches, one-dimensional and cubic barriers, spherical bubbles, Gaussian bumps, and Gaussian depressions are considered as support structures for graphene. The graphene-substrate interaction is governed by van der Waals forces and the profile of the graphene layer is determined by minimizing the energy using molecular dynamics simulations. Based on the obtained optimum configurations, we found that (i) for graphene placed over sinusoidally corrugated substrates with corrugation wavelengths longer than 2 nm, the graphene sheet follows the substrate pattern while for supported graphene it is always suspended across the peaks of the substrate, (ii) the conformation of graphene to the substrate topography is enhanced when increasing the energy parameter in the van der Waals model, (iii) the adhesion of graphene into the trenches depends on the width of the trench and on the graphene's orientation, i. e., in contrast to a small-width (3 nm) nanoribbon with armchair edges, the one with zigzag edges follows the substrate profile, (iv) atomic-scale graphene follows a Gaussian bump substrate but not the substrate with a Gaussian depression, and (v) the adhesion energy due to van der Waals interaction varies in the range [0.1-0.4] J/m(2).
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 62
DOI: 10.1103/PhysRevB.85.195445
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“Strain-engineered graphene through a nanostructured substrate : 2 : pseudomagnetic fields”. Neek-Amal M, Peeters FM, Physical review : B : condensed matter and materials physics 85, 195446 (2012). http://doi.org/10.1103/PhysRevB.85.195446
Abstract: The strain-induced pseudomagnetic field in supported graphene deposited on top of a nanostructured substrate is investigated by using atomistic simulations. A step, an elongated trench, a one-dimensional barrier, a spherical bubble, a Gaussian bump, and a Gaussian depression are considered as support structures for graphene. From the obtained optimum configurations we found very strong induced pseudomagnetic fields which can reach up to similar to 1000 T due to the strain-induced deformations in the supported graphene. Different magnetic confinements with controllable geometries are found by tuning the pattern of the substrate. The resulting induced magnetic fields for graphene on top of a step, barrier, and trench are calculated. In contrast to the step and trench the middle part of graphene on top of a barrier has zero pseudomagnetic field. This study provides a theoretical background for designing magnetic structures in graphene by nanostructuring substrates. We found that altering the radial symmetry of the deformation changes the sixfold symmetry of the induced pseudomagnetic field.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 31
DOI: 10.1103/PhysRevB.85.195446
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“Strain-induced band gaps in bilayer graphene”. Verberck B, Partoens B, Peeters FM, Trauzettel B, Physical review : B : condensed matter and materials physics 85, 125403 (2012). http://doi.org/10.1103/PhysRevB.85.125403
Abstract: We present a tight-binding investigation of strained bilayer graphene within linear elasticity theory, focusing on the different environments experienced by the A and B carbon atoms of the different sublattices. We find that the inequivalence of the A and B atoms is enhanced by the application of perpendicular strain epsilon(zz), which provides a physical mechanism for opening a band gap, most effectively obtained when pulling the two graphene layers apart. In addition, perpendicular strain introduces electron-hole asymmetry and can result in linear electronic dispersion near the K point. Our findings suggest experimental means for strain-engineered band gaps in bilayer graphene.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 53
DOI: 10.1103/PhysRevB.85.125403
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“Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2”. Scalise E, Houssa M, Pourtois G, Afanas'ev V, Stesmans A, Nano Research 5, 43 (2012). http://doi.org/10.1007/s12274-011-0183-0
Abstract: The electronic properties of two-dimensional honeycomb structures of molybdenum disulfide (MoS(2)) subjected to biaxial strain have been investigated using first-principles calculations based on density functional theory. On applying compressive or tensile bi-axial strain on bi-layer and mono-layer MoS(2), the electronic properties are predicted to change from semiconducting to metallic. These changes present very interesting possibilities for engineering the electronic properties of two-dimensional structures of MoS(2).
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 7.354
Times cited: 407
DOI: 10.1007/s12274-011-0183-0
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“Strain mapping around dislocations in diamond and cBN”. Willems B, Nistor L, Ghica C, Van Tendeloo G, Physica status solidi: A: applied research 202, 2224 (2005). http://doi.org/10.1002/pssa.200561923
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 4
DOI: 10.1002/pssa.200561923
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“Strain measurement at the nanoscale : comparison between convergent beam electron diffraction, nano-beam electron diffraction, high resolution imaging and dark field electron holography”. Béché, A, Rouviere JL, Barnes JP, Cooper D, Ultramicroscopy 131, 10 (2013). http://doi.org/10.1016/j.ultramic.2013.03.014
Abstract: Convergent beam electron diffraction (CBED), nano-beam electron diffraction (NBED or NBD), high resolution imaging (HRTEM and HRSTEM) and dark field electron holography (DFEH or HoloDark) are five TEM based techniques able to quantitatively measure strain at the nanometer scale. In order to demonstrate the advantages and disadvantages of each technique, two samples composed of epitaxial silicon-germanium layers embedded in a silicon matrix have been investigated. The five techniques are then compared in terms of strain precision and accuracy, spatial resolution, field of view, mapping abilities and ease of performance and analysis. (C) 2013 Elsevier By. All rights reserved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.843
Times cited: 73
DOI: 10.1016/j.ultramic.2013.03.014
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“Strain relaxation and oxygen superstructure modulation in epitaxial Sr4Fe6O13\pm\delta films”. Santiso J, Pardo JA, Solis C, Garcia G, Figueras A, Rossell MD, Van Tendeloo G, Applied physics letters 86, 132105 (2005). http://doi.org/10.1063/1.1886264
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 5
DOI: 10.1063/1.1886264
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“Strained La1-xSrxMnO3 (x = 0.1 – 0.3) thin films studied by HREM”. Lebedev OI, Van Tendeloo G, Amelinckx S s.l., page 201 (2000).
Keywords: H3 Book chapter; Electron microscopy for materials research (EMAT)
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“Streaming-to-accumulation transition in a 2-dimensional electron-system in a polar semiconductor”. Xu W, Peeters FM, Devreese JT, Physical review : B : condensed matter and materials physics 46, 7571 (1992). http://doi.org/10.1103/PhysRevB.46.7571
Abstract: Hot-electron transport is studied for a two-dimensional electron gas coupled to longitudinal-optical phonons in crossed electric and magnetic fields. At low electric and high magnetic fields the electrons are accumulated, while at high electric fields they are in a streaming state. We develop a streaming-to-accumulation transition model and compare the results with that from a Monte Carlo simulation.
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Impact Factor: 3.736
Times cited: 13
DOI: 10.1103/PhysRevB.46.7571
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“Streaming-to-accumulation transition in a two-dimensional electron system in a polar semiconductor”. Wen X, Peeters FM, Devreese JT, Physical review : B : condensed matter and materials physics 46, 7571 (1992). http://doi.org/10.1103/PhysRevB.46.7571
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Impact Factor: 3.736
Times cited: 13
DOI: 10.1103/PhysRevB.46.7571
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“Stress analysis with convergent beam electron diffraction around NMOS transistors”. Stuer G, Bender H, van Landuyt J, Eyben P, , 359 (2001)
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT); Internet Data Lab (IDLab)
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“Stress-assisted crystallisation in anodic titania”. Vanhumbeeck J-F, Tian H, Schryvers D, Proost J, Corrosion science 53, 1269 (2011). http://doi.org/10.1016/j.corsci.2010.12.020
Abstract: The relationship between the microstructural and internal stress evolution during Ti anodising is discussed. Samples anodised galvanostatically to 12 V and 40 V, corresponding to different stages of the internal stress evolution, were examined by in-plane and cross-section transmission electron microscopy. Electron diffraction patterns have been complemented with stoichiometry data obtained from energy loss near edge structure spectra. The sample anodised to 40 V was observed to consist of two regions, with a crystallised inner region adjacent to the metal/oxide interface. Crystallisation of this region is associated with the presence of large compressive internal stresses which build up during anodising up to 12 V.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 5.245
Times cited: 11
DOI: 10.1016/j.corsci.2010.12.020
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“Strong-coupling analysis of large bipolarons in 2 and 3 dimensions”. Verbist G, Smondyrev MA, Peeters FM, Devreese JT, Physical review : B : condensed matter and materials physics 45, 5262 (1992). http://doi.org/10.1103/PhysRevB.45.5262
Abstract: In the limit of strong electron-phonon coupling, we use either a Pekar-type or an oscillator wave function for the center-of-mass coordinate and either a Coulomb or an oscillator wave function for the relative coordinate, and are able to reproduce all the results from the literature for the large-bipolaron binding energy. Lower bounds are constructed for the critical ratio eta(c) of dielectric constants below which bipolarons can exist. It is found that, in the strong-coupling limit, the stability region for bipolaron formation is much larger in two dimensions (2D) than in 3D. We introduce a model that combines the averaging of the relative coordinate over the asymptotically best wave function with a path-integral treatment of the center-of-mass motion. The stability region for bipolaron formation is increased compared with the full path-integral treatment at large values of the coupling constant alpha. The critical values are alpha(c) almost-equal-to 9.3 in 3D and alpha(c) almost-equal-to 4.5 in 2D. Phase diagrams for the presented models are also obtained in both 2D and 3D.
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Impact Factor: 3.736
Times cited: 68
DOI: 10.1103/PhysRevB.45.5262
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“Strong-coupling analysis of large bipolarons in two and three dimensions”. Verbist G, Smondyrev MA, Peeters FM, Devreese JT, Physical review : B : condensed matter and materials physics 45, 5262 (1992). http://doi.org/10.1103/PhysRevB.45.5262
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Impact Factor: 3.736
Times cited: 68
DOI: 10.1103/PhysRevB.45.5262
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“Strong-coupling limit for one-dimensional polarons in a finite box”. Vansant P, Smondyrev MA, Peeters FM, Devreese JT, Zeitschrift für Physik: B: condensed matter and quanta 99, 345 (1996). http://doi.org/10.1007/s002570050047
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Times cited: 1
DOI: 10.1007/s002570050047
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“Strong enhancement of superconductivity in a nanosized Pb bridge”. Misko VR, Fomin VM, Devreese JT, Physical Review B 64, 014517 (2001). http://doi.org/10.1103/PhysRevB.64.014517
Keywords: A1 Journal article; Electron Microscopy for Materials Science (EMAT);
Impact Factor: 3.836
Times cited: 28
DOI: 10.1103/PhysRevB.64.014517
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“Strong influence of nonlocal nonequilibrium effects on the dynamics of the order parameter in a phase-slip center: ring studies”. Vodolazov DY, Peeters FM, Physical review : B : condensed matter and materials physics 81, 184521 (2010). http://doi.org/10.1103/PhysRevB.81.184521
Abstract: We study the influence of the inelastic relaxation time τ̃E of the quasiparticle distribution function f(E) on the phase slip process in quasi-one-dimensional superconducting rings at a temperature close to the critical temperature Tc. We find that the initial time of growth of the order parameter |Δ| in the phase slip core after the phase slip is a nonmonotonic function of τ̃E which has a maximum at τ̃E≃τ̃GL=πℏ/8kB(Tc−T) and has a tendency to saturate for large τ̃E⪢τ̃GL. The effective heating of the electron subsystem due to the increase in |Δ| in the phase slip center together with the above effect result in a nonmonotonic dependence of the number of subsequent phase slips on τ̃E in rings of relatively large radius (in which each phase slip reduces the current density to a small fraction of its initial value). During the phase slip process the order parameter distribution has two peaks near the phase slip core due to the diffusion of the nonequilibrium quasiparticles from that region.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 5
DOI: 10.1103/PhysRevB.81.184521
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“Strong resonant intersubband magnetopolaron effect in heavily modulation-doped GaAs/AlGaAs single quantum wells at high magnetic fields”. Wang YJ, Leem YA, McCombe BD, Wu XG, Peeters FM, Jones E, Reno J, Lee XY, Jiang HW, Physica. E: Low-dimensional systems and nanostructures 6, 195 (2000). http://doi.org/10.1016/S1386-9477(99)00086-7
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.221
Times cited: 2
DOI: 10.1016/S1386-9477(99)00086-7
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“Strong three-level resonant magnetopolaron effect due to the intersubband coupling in heavily modulation-doped GaAs/AlxGa1-xAs single quantum wells at high magnetic-fields”. Wang YJ, Leem YA, McCombe BD, Wu XG, Peeters FM, Jones ED, Reno JR, Lee XY, Jiang HW, Physical Review B 64, 161303 (2001). http://doi.org/10.1103/PhysRevB.64.161303
Abstract: Electron cyclotron resonance CR) measurements have been carried out in magnetic fields up to 32 T to study electron-phonon interaction in two heavily modulation-delta -doped GaAs/Al0.3Ga0.7As single-quantum-well samples. No measurable resonant magnetopolaron effects were observed in either sample in the region of the GaAs longitudinal optical (LO) phonons. However, when the CR frequency is above LO phonon frequency, omega (LO)=E-LO/(h) over bar, at high magnetic fields (B>27 T), electron CR exhibits a strong avoided-level-crossing splitting for both samples at frequencies close to (omega (LO)+ (E-2-E-1)1 (h) over bar, where E-2, and E-1 are the energies of the bottoms of the second and the first subbands, respectively. The energy separation between the two branches is large with the minimum separation of 40 cm(-1) occurring at around 30.5 T. A detailed theoretical analysis, which includes a self-consistent calculation of the band structure and the effects of electron-phonon interaction on the CR, shows that this type of splitting is due to a three-level resonance between the second Landau level of the first electron subband and the lowest Landau level of the second subband plus one GaAs LO phonon. The absence of occupation effects in the final states and weak screening or this three-level process yields large energy separation even in the presence of high electron densities. Excellent agreement between the theory and the experimental results is obtained.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 7
DOI: 10.1103/PhysRevB.64.161303
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Papp G, Peeters FM (2003) Strong wave-vector filtering and nearly 100% spin polarization through resonant tunneling antisymmetrical magnetic structure (vol 81, pg 691, 2002). American Institute of Physics, New York, N.Y., 3570–3570
Keywords: L1 Letter to the editor; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 21
DOI: 10.1063/1.1577821
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Nasr Esfahani D (2014) Strongly correlated electronic systems : influence of electric field and doping. Antwerpen
Keywords: Doctoral thesis; Condensed Matter Theory (CMT)
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“Strongly interacting σ-electrons and MgB2 superconductivity”. Ivanov VA, van den Broek M, Peeters FM, Solid state communications 120, 53 (2001). http://doi.org/10.1016/S0038-1098(01)00351-9
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.554
Times cited: 5
DOI: 10.1016/S0038-1098(01)00351-9
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“Structural analysis of silver halide cubic microcrystals with epitaxial or conversion growths by STEM-EDX”. Wu S, van Daele A, Jacob W, Gijbels R, Verbeeck A, de Keyzer R, Mikrochimica acta: supplementum 12, 261 (1992)
Keywords: A3 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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“Structural analysis of CuInSe2, CuInTe2 and CuInSeTe by electron microscopy and X-ray techniques”. Leon M, Merino JM, Van Tendeloo G, Acta Microscopica 18, 128 (2009)
Abstract: A structural research of semiconductor compounds for photovoltaic applications CuInSe(2), CuInTe(2) and CuInSeTe, has been done by x-ray diffraction using the Rietveld analysis of experimental diagrams. Besides, in the CuInSeTe compound the electron diffraction and high resolution microscopy techniques have been used. All the studied compounds were polycrystals with chalcopyrite tetragonal structure, I. 42d. A model for the atomic occupancy in each compound has been proposed, and the results have been compared analyzing the Se-Te substitution effect.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.07
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“Structural and analytical characterization of Ag(Br,I) nanocrystals by cryo-AEM techniques”. Oleshko VP, van Daele A, Gijbels RH, Jacob WA, Journal of nanostructured materials 10, 1225 (1998). http://doi.org/10.1016/S0965-9773(99)00003-3
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Times cited: 5
DOI: 10.1016/S0965-9773(99)00003-3
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“Structural and analytical characterization of composite tabular silver halide microcrystals by cryo-EFTEM/EELS and cryo-STEM/EDX techniques”. Oleshko VP, Gijbels RH, Jacob WA, van Daele AJ Antwerp, page 317 (1998).
Keywords: H3 Book chapter; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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“Structural and chemical effects on EELS L3,2 ionization edges in Ni-based intermetallic compounds”. Potapov PL, Kulkova SE, Schryvers D, Verbeeck J, Physical review : B : condensed matter and materials physics 64, 184110 (2001). http://doi.org/10.1103/PhysRevB.64.184110
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 44
DOI: 10.1103/PhysRevB.64.184110
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