Author |
Title |
Year |
Publication |
Volume |
Times cited |
Additional Links |
Ao, Z.M.; Hernández-Nieves, A.D.; Peeters, F.M.; Li, S. |
Enhanced stability of hydrogen atoms at the graphene/graphane interface of nanoribbons |
2010 |
Applied physics letters |
97 |
43 |
UA library record; WoS full record; WoS citing articles |
Razavi, F.S.; Gross, G.; Habermeier, H.-U.; Lebedev, O.; Amelinckx, S.; Van Tendeloo, G.; Vigliante, A. |
Epitaxial strain induced metal insulator transition in La0.9Sr0.1MnO3 and La0.88Sr0.1MnO3 thin films |
2000 |
Applied physics letters |
76 |
91 |
UA library record; WoS full record; WoS citing articles |
Vandenberghe, W.G.; Verhulst, A.S.; Sorée, B.; Magnus, W.; Groeseneken, G.; Smets, Q.; Heyns, M.; Fischetti, M.V. |
Figure of merit for and identification of sub-60 mV/decade devices |
2013 |
Applied physics letters |
102 |
64 |
UA library record; WoS full record; WoS citing articles |
Schowalter, M.; Lamoen, D.; Kruse, P.; Gerthsen, D.; Rosenauer, A. |
First-principles calculations of the mean inner Coulomb potential for sphalerite type II.VI semiconductors |
2004 |
Applied Physics Letters |
85 |
16 |
UA library record; WoS full record; WoS citing articles |
Sankaran, K.; Pourtois, G.; Degraeve, R.; Zahid, M.B.; Rignanese, G.-M.; Van Houdt, J. |
First-principles modeling of intrinsic and extrinsic defects in \gamma-Al2O3 |
2010 |
Applied physics letters |
97 |
12 |
UA library record; WoS full record; WoS citing articles |
Clima, S.; Chen, Y.Y.; Degraeve, R.; Mees, M.; Sankaran, K.; Govoreanu, B.; Jurczak, M.; De Gendt, S.; Pourtois, G. |
First-principles simulation of oxygen diffusion in HfOx : role in the resistive switching mechanism |
2012 |
Applied physics letters |
100 |
63 |
UA library record; WoS full record; WoS citing articles |
Du, G.H.; Xu, F.; Yuan, Z.Y.; Van Tendeloo, G. |
Flowerlike ZnO nanocones and nanowires: preparation, structure, and luminescence |
2006 |
Applied physics letters |
88 |
76 |
UA library record; WoS full record; WoS citing articles |
Milošević, M.V.; Berdiyorov, G.R.; Peeters, F.M. |
Fluxonic cellular automata |
2007 |
Applied physics letters |
91 |
45 |
UA library record; WoS full record; WoS citing articles |
van Daele, B.; Van Tendeloo, G.; Jacobs, K.; Moerman, I.; Leys, M. |
Formation of metallic In in InGaN/GaN multiquantum wells |
2004 |
Applied physics letters |
85 |
32 |
UA library record; WoS full record; WoS citing articles |
Verbist, K.; Lebedev, O.I.; Van Tendeloo, G.; Verhoeven, M.A.J.; Rijnders, A.J.H.M.; Blank, D.H.A.; Rogalia, H. |
Ga segregation in DyBa2Cu3O7-\delta/PrBa2Cu3-xGaxO7-\delta/DyBa2Cu3O7-\delta ramp-type Josephson junctions |
1997 |
Applied physics letters |
70 |
8 |
UA library record; WoS full record; WoS citing articles |
Leenaerts, O.; Partoens, B.; Peeters, F.M. |
Graphene: a perfect nanoballoon |
2008 |
Applied physics letters |
93 |
295 |
UA library record; WoS full record; WoS citing articles |
Milton Pereira, J.; Vasilopoulos, P.; Peeters, F.M. |
Graphene-based resonant-tunneling structures |
2007 |
Applied physics letters |
90 |
147 |
UA library record; WoS full record; WoS citing articles |
Neek-Amal, M.; Peeters, F.M. |
Graphene on boron-nitride : Moiré pattern in the van der Waals energy |
2014 |
Applied physics letters |
104 |
61 |
UA library record; WoS full record; WoS citing articles |
Neek-Amal, M.; Peeters, F.M. |
Graphene on hexagonal lattice substrate : stress and pseudo-magnetic field |
2014 |
Applied physics letters |
104 |
14 |
UA library record; WoS full record; WoS citing articles |
Milošević, M.V.; Gillijns, W.; Silhanek, A.V.; Libál, A.; Peeters, F.M.; Moshchalkov, V.V. |
Guided nucleation of superconductivity on a graded magnetic substrate |
2010 |
Applied physics letters |
96 |
15 |
UA library record; WoS full record; WoS citing articles |
Peeters, F.M.; Li, X.Q. |
Hall magnetometer in the ballistic regime |
1998 |
Applied physics letters |
72 |
119 |
UA library record; WoS full record; WoS citing articles |
Baelus, B.J.; Peeters, F.M. |
Hall potentiometer in the ballistic regime |
1999 |
Applied physics letters |
74 |
13 |
UA library record; WoS full record; WoS citing articles |
Frangis, N.; van Landuyt, J.; Lartiprete, R.; Martelli, S.; Borsella, E.; Chiussi, S.; Castro, J.; Leon, B. |
High resolution electron microscopy and X-ray photoelectron spectroscopy studies of heteroepitaxial SixGe1-x alloys produced through laser induced processing |
1998 |
Applied physics letters |
72 |
16 |
UA library record; WoS full record; WoS citing articles |
Amin-Ahmadi, B.; Idrissi, H.; Delmelle, R.; Pardoen, T.; Proost, J.; Schryvers, D. |
High resolution transmission electron microscopy characterization of fcc -> 9R transformation in nanocrystalline palladium films due to hydriding |
2013 |
Applied physics letters |
102 |
14 |
UA library record; WoS full record; WoS citing articles |
Cloetens, P.; Ludwig, W.; Baruchel, J.; van Dyck, D.; van Landuyt, J.; Guigay, J.P.; Schlenker, M. |
Holotomography: quantitative phase tomography with micrometer resolution using hard synchrotron radiation X-rays |
1999 |
Applied physics letters |
75 |
481 |
UA library record; WoS full record; WoS citing articles |
Reijniers, J.; Peeters, F.M. |
Hybrid ferromagnetic/semiconductor Hall effect device |
1998 |
Applied physics letters |
73 |
35 |
UA library record; WoS full record; WoS citing articles |
Clima, S.; Wouters, D.J.; Adelmann, C.; Schenk, T.; Schroeder, U.; Jurczak, M.; Pourtois, G. |
Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2 : a first principles insight |
2014 |
Applied physics letters |
104 |
79 |
UA library record; WoS full record; WoS citing articles |
Vandenberghe, W.G.; Sorée, B.; Magnus, W.; Groeseneken, G.; Fischetti, M.V. |
Impact of field-induced quantum confinement in tunneling field-effect devices |
2011 |
Applied physics letters |
98 |
76 |
UA library record; WoS full record; WoS citing articles |
Verreck, D.; Verhulst, A.S.; Sorée, B.; Collaert, N.; Mocuta, A.; Thean, A.; Groeseneken, G. |
Improved source design for p-type tunnel field-effect transistors : towards truly complementary logic |
2014 |
Applied physics letters |
105 |
10 |
UA library record; WoS full record; WoS citing articles |
Dobbelaere, W.; de Boeck, J.; Heremans, P.; Mertens, R.; Borghs, G.; Luyten, W.; van Landuyt, J. |
InAs p-n diodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy |
1992 |
Applied physics letters |
60 |
20 |
UA library record; WoS full record; WoS citing articles |
Dobbelaere, W.; de Boeck, J.; Heremans, P.; Mertens, R.; Borghs, G.; Luyten, W.; van Landuyt, J. |
InAs0.85Sb0.15 infrared photodiodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy |
1992 |
Applied physics letters |
600 |
32 |
UA library record; WoS full record; WoS citing articles |
Scalise, E.; Houssa, M.; Pourtois, G.; Afanas'ev, V.V.; Stesmans, A. |
Inelastic electron tunneling spectroscopy of HfO2 gate stacks : a study based on first-principles modeling |
2011 |
Applied physics letters |
99 |
1 |
UA library record; WoS full record; WoS citing articles |
Martens, T.; Bogaerts, A.; Brok, W.J.M.; van Dijk, J. |
The influence of impurities on the performance of the dielectric barrier discharge |
2010 |
Applied physics letters |
96 |
28 |
UA library record; WoS full record; WoS citing articles |
Mlinar, V.; Peeters, F.M. |
Influence of the substrate orientation on the electronic and optical properties of InAs/GaAs quantum dots |
2006 |
Applied physics letters |
89 |
16 |
UA library record; WoS full record; WoS citing articles |
Chen, Y.Y.; Pourtois, G.; Adelmann, C.; Goux, L.; Govoreanu, B.; Degreave, R.; Jurczak, M.; Kittl, J.A.; Groeseneken, G.; Wouters, D.J. |
Insights into Ni-filament formation in unipolar-switching Ni/HfO2/TiN resistive random access memory device |
2012 |
Applied physics letters |
100 |
29 |
UA library record; WoS full record; WoS citing articles |