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“Nanocrystalline diamond films: transmission electron microscopy and Raman spectroscopy characterization”. Nistor LC, van Landuyt J, Ralchenko VG, Obratzova ED, Smolin AA, Diamond and related materials 6, 159 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.561
Times cited: 116
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“New erbium silicide superstructures: a study by high resolution electron microscopy”. Frangis N, Van Tendeloo G, van Landuyt J, Kaltsas G, Travlos A, Nassiopoulos AG, Physica status solidi: A: applied research 158, 107 (1996)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 6
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“New intermediate defect configuration in Si studied by in situ HREM irradiation”. Fedina L, Gutakovskii A, Aseev A, van Landuyt J, Vanhellemont J, Conference series of the Institute of Physics 157, 43 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“New method to determine the parity of the number of twin planes in tabular silver halide microcrystals from top views”. Goessens C, Schryvers D, van Landuyt J, de Keyzer R, The journal of imaging science and technology 41, 301 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.348
Times cited: 1
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“Observation of Sb203 nanocrystals in SiO2 after Sb ion implantation”. Ignatova VA, Lebedev OI, Wätjen U, van Vaeck L, van Landuyt J, Gijbels R, Adams F, Microchimica acta 139, 77 (2002). http://doi.org/10.1007/s006040200043
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 4.58
Times cited: 3
DOI: 10.1007/s006040200043
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“Observation of vacancy clustering in FZ-Si crystals during in situ electron irradiation in a high voltage electron microscope”. Fedina L, van Landuyt J, Vanhellemont J, Aseev AL, Nuclear instruments and methods in physics research B112, 133 (1996). http://doi.org/10.1016/0168-583X(95)01277-X
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.124
Times cited: 4
DOI: 10.1016/0168-583X(95)01277-X
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“Observation of vacancy clustering in Si crystals during in situ electron irradiation in a high voltage electron microscope”. Fedina L, van Landuyt J, Vanhellemont J, Aseev A, Materials Research Society symposium proceedings 404, 189 (1996)
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
Times cited: 1
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“On the interpretation of HREM images of partially ordered alloys”. De Meulenaere P, Van Tendeloo G, van Landuyt J, van Dyck D, Ultramicroscopy 60, 265 (1995). http://doi.org/10.1016/0304-3991(95)00065-9
Abstract: The ordering for 11/20 alloys has been studied by high-resolution electron microscopy (HREM). The distribution of the intensity maxima in the HREM image have been statistically examined, which provides a profound basis for the image interpretation. Processing of the HREM images allows ''dark-field'' images to be obtained, exhibiting a two-dimensional distribution of those columns which contain the most information in order to interpret the short-range order correlations. Pair correlations and higher cluster correlations between projected columns can be visualised, providing unique information about the ordering as retrieved from an experimental result without any other assumption. The method has been applied to Au4Cr and to Au4Mn to interpret the quenched short-range order state and the transition to long-range order.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 2.436
Times cited: 20
DOI: 10.1016/0304-3991(95)00065-9
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“On the mechanism of {111}-defect formation in silicon studies by in situ electrin irradiation in a high resolution electron microscope”. Fedina L, Gutakovskii A, Aseev A, van Landuyt J, Vanhellemont J, Philosophical magazine: A: physics of condensed matter: defects and mechanical properties 77, 423 (1998)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 23
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“Optical spectroscopy of oxygen precipitates in heavily doped p-type silicon”. Simoen E, Loo R, Claeys C, de Gryse O, Clauws P, van Landuyt J, Lebedev O, Journal of physics : condensed matter
T2 –, Conference on Extended Defects in Semiconductors (EDS 2002), JUN 01-06, 2002, BOLOGNA, ITALY 14, 13185 (2002). http://doi.org/10.1088/0953-8984/14/48/367
Abstract: Results are presented on the photoluminescence (PL) characterization of heavily doped p(+) Czochralski silicon, which has been subjected to a two-step, oxygen precipitation heat treatment. It will be shown that the presence of oxygen precipitates gives rise to the D1, D2 and D5 lines, where the energy of the D1 line shifts to lower values for a stronger degree of precipitation. The occurrence of these PL features is also a function of the boron concentration in the p(+) material. The PL results are compared with Fourier transform infrared absorption data and with transmission electron microscope, results. From this, it is concluded that PL has a good potential for use in the assessment of oxygen precipitation in heavily doped silicon.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.649
Times cited: 3
DOI: 10.1088/0953-8984/14/48/367
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“Ordering and defects in BanTaxTiyO3n ternary oxides”. Nistor L, Van Tendeloo G, Amelinckx S, Shpanchenko RV, van Landuyt J, Electron Microscopy 1994, Vols 2a And 2b: Applications In Materials Sciences , 869 (1994)
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
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“Oxide phase determination in silicon using infrared spectroscopy and transmission electron microscopy techniques”. Gryse OD, Clauws P, van Landuyt J, Lebedev O, Claeys C, Simoen E, Vanhellemont J, Journal of applied physics 91, 2493 (2002). http://doi.org/10.1063/1.1429800
Abstract: Infrared absorption spectra of polyhedral and platelet oxygen precipitates in silicon are analyzed using a modified Day-Thorpe approach [J. Phys.: Condens. Matter 11, 2551 (1999)]. The aspect ratio of the precipitates is determined by transmission electron microscopy analysis. The reduced spectral function and the stoichiometry of the precipitate are extracted from the absorption spectra and the amount of precipitated interstitial oxygen. The experimental absorption spectra can be divided in a set with a Frohlich frequency of around 1100 cm(-1) and in a set with a Frohlich frequency between 1110 and 1120 cm(-1). It is shown that the shift in the Frohlich frequency is not due to a differing stoichiometry, but to the detailed structure of the reduced spectral function. Inverse modeling of the spectra suggests that the oxide precipitates consist of substoichiometric SiOgamma with gamma=1.17+/-0.14. (C) 2002 American Institute of Physics.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.068
Times cited: 27
DOI: 10.1063/1.1429800
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“Phase assembly and microstructure of CeO2-doped ZrO2 ceramics prepared by spark plasma sintering”. Xu T, Wang P, Fang P, Kan Y, Chen L, Vleugels J, Van der Biest O, van Landuyt J, Journal of the European Ceramic Society 25, 3437 (2005). http://doi.org/10.1016/j.jeurceramsoc.2004.09.004
Abstract: CeO2-doped ZrO2, (8 mol%) starting powder was sintered by means of spark plasma sintering (SPS) at 1300 degrees C without holding time. The stability of the tetragonal ZrO2 phase in the Ce-ZrO2 ceramic sintered under strongly reducing conditions was investigated. The SPS sample consisted of monoclinic and tetragonal ZrO2 phase, with a volume ratio of two to one, as well as a trace amount of a Zr-Ce-O cubic solid solution phase. In contrast, the same powder sintered by hot-pressing in nitrogen at 1300 and 1500 degrees C for 1h showed no tetragonal ZrO2. Microstructural observation of the SPS ceramic by SEM and TEM revealed grains with and without twins. The reason for the appearance of the tetragonal phase in the SPS sample sintered under strongly reducing conditions is discussed. (c) 2004 Elsevier Ltd. All rights reserved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 13
DOI: 10.1016/j.jeurceramsoc.2004.09.004
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“Phase transitions in C60 and the related microstructure: a study by electron diffraction and electron microscopy”. Van Tendeloo G, van Heurck C, van Landuyt J, Amelinckx S, Verheijen MA, van Loosdrecht PHM, Meijer G, Journal of physical chemistry 96, 7424 (1992). http://doi.org/10.1021/j100197a054
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 33
DOI: 10.1021/j100197a054
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“Photoelectric and electrical responses of several erbium silicide/silicon interfaces”. Muret P, Nguyen TTA, Frangis N, Van Tendeloo G, van Landuyt J, Applied surface science
T2 –, International Symposium on Si Heterostructures –, From Physics to Devices, SEP 11-14, 1995, IRAKLION, GREECE 102, 173 (1996). http://doi.org/10.1016/0169-4332(96)00042-6
Abstract: In this work, photoelectric yield and electrical properties of several types of epitaxial erbium silicide on silicon Schottky diodes are studied, Different preparation conditions are used simultaneously on n- and p-Si(111) substrates for the 200 Angstrom thick silicide films. A last type of sample consists in 1.3 monolayer of epitaxial silicide with root 3 X root 3 superstructure on the Si substrate and covered by silver on the top. Photocurrent measurements are done as a function of photon energy at several temperatures. All these samples show barrier heights near 1 eV on p-type Si, even for the interface comprising only 1.3 monolayer of silicide whereas barrier heights on n-rype Si span the range from 0.28 to 0.67 eV for this last kind of sample, the sum of the barriers always exceeding the silicon band gap, These photoelectric results are confirmed by electrical characterisations, All these results show that the Fermi level is pinned 0.1 eV below the conduction band edge on p-type Si but shifts to various positions lower within the band gap on n-type Si. This fact leads to the hypothesis of a density of -7 interface states close to the charge change in the Si depletion zone from p- to n-type, namely 10(12) eV(-1) cm(-2). Although some inhomogeneities and defects at the interface are detected by electron microscopy for samples annealed at 750 degrees C, Fermi level position seems rather insensitive to the structural details of the interface while the silicide thickness plays a role on n-type Si.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.711
Times cited: 3
DOI: 10.1016/0169-4332(96)00042-6
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“Point defect reactions in silicon studied in situ by high flux electron irradiation in high voltage transmission electron microscope”. Vanhellemont J, Romano Rodriguez A, Fedina L, van Landuyt J, Aseev A, Materials science and technology 11, 1194 (1995). http://doi.org/10.1179/mst.1995.11.11.1194
Abstract: Results are presented of in situ studies of 1 MeV electron irradiation induced (113) defect generation in silicon containing different types and concentrations of extrinsic point defects. A semiquantitative model is developed describing the influence of interfaces and stress fields and of extrinsic point defects on the (113) defect generation in silicon during irradiation. The theoretical results obtained are correlated with experimental data obtained on silicon uniformly doped with boron and phosphorus and with observations obtained by irradiating cross-sectional samples of wafers with highly doped surface layers. It is shown that in situ irradiation in a high voltage election microscope is a powerful tool for studying local point defect reactions in silicon. (C) 1995 The Institute of Materials.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 0.995
Times cited: 7
DOI: 10.1179/mst.1995.11.11.1194
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“Point defect reactions in silicon studies in situ by high flux electron irradiation in high voltage transmission electron microscope”. Vanhellemont J, Romano-Rodriguez A, Fedina L, van Landuyt J, Aseev A, Materials science and technology 11, 1194 (1995)
Keywords: A3 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 7
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“Precipitation behavior in Cu-Co alloy”. Takeda M, Shinohara G, Yamada H, Yoshida S, van Landuyt J, Hashimoto H, , 205 (1998)
Keywords: P3 Proceeding; Electron microscopy for materials research (EMAT)
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“Quantitative EFTEM study of germanium quantum dots”. Hens S, Stuer C, Bender H, Loo R, van Landuyt J, , 345 (2001)
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
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“Radiation defects and ordered radiation patterns in Ni and Ni4Mo: a study by electron microscopy”. De Meulenaere P, Van Tendeloo G, van Landuyt J, Mommaert C, Severne G, Philosophical magazine: A: physics of condensed matter: defects and mechanical properties 67, 745 (1993). http://doi.org/10.1080/01418619308207187
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 1
DOI: 10.1080/01418619308207187
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“The reciprocal space of carbon tubes: a detailed interpretation of the electron diffraction effects”. Zhang XB, Zhang XF, Amelinckx S, Van Tendeloo G, van Landuyt J, Ultramicroscopy 54, 237 (1994). http://doi.org/10.1016/0304-3991(94)90123-6
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.436
Times cited: 59
DOI: 10.1016/0304-3991(94)90123-6
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“Reliability of copper dual damascene influenced by pre-clean”. Tokei Z, Lanckmans F, van den Bosch G, Van Hove M, Maex K, Bender H, Hens S, van Landuyt J, Analysis Of Integrated Circuits , 118 (2002). http://doi.org/10.1109/IPFA.2002.1025629
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
Times cited: 5
DOI: 10.1109/IPFA.2002.1025629
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“Round-robin investigation of silicon-oxide on silicon reference materials for ellipsometry”. Vanhellemont J, Maes HE, Schaekers M, Armigliato A, Cerva H, Cullis A, de Sande J, Dinges H, Hallais J, Nayar V, Pickering C, Stehlé, JL, Van Landuyt J, Walker C, Werner H, Salieri P;, Applied surface science
T2 –, SYMP ON DIAGNOSTIC TECHNIQUES FOR SEMICONDUCTOR MATERIALS ANALYSIS AND, FABRICATION PROCESS CONTROL, AT THE 1992 SPRING CONF OF THE EUROPEAN, MATERIALS RESEARCH SOC, JUN 02-05, 1992, STRASBOURG, FRANCE 63, 45 (1993). http://doi.org/10.1016/0169-4332(93)90062-G
Abstract: The main results and conclusions are presented of a round robin study of silicon oxide on silicon reference samples for ellipsometry. The oxide films with nominal thicknesses of 10, 50 and 120 nm are grown by thermal oxidation. The oxide film thicknesses have been determined by single wavelength ellipsometry (SWE), by spectroscopic ellipsometry (SE) and by cross-sectional conventional and high-resolution transmission electron microscopy (TEM and HREM) in different laboratories. The main conclusions are that special precautions have to be taken in order to use TEM as a reliable thickness measurement technique; that single wavelength ellipsometry can be used with great accuracy and reproducibility for the 50 and 120 nm film thicknesses but that it shows some inherent problems for the 10 nm films; and that spectroscopic ellipsometry showed for all film thicknesses an accuracy and reproducibility which is clearly superior to that of SWE.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.711
Times cited: 13
DOI: 10.1016/0169-4332(93)90062-G
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“A simple preparation method for air-sensitive specimens for transmission electron microscopy demonstrated by Rb6C60”. Zhang XF, Zhang XB, Bernaerts D, Van Tendeloo G, Amelinckx S, van Landuyt J, Werner H, Ultramicroscopy 55, 25 (1994). http://doi.org/10.1016/0304-3991(94)90077-9
Abstract: In this paper a particularly simple but efficient method is presented by which samples of alkali-doped C-60 materials or other air-sensitive materials can be prepared and transferred into a transmission electron microscope for direct observations and investigations. Flexible, transparent glove bags are used which are filled to a slight overpressure with dry nitrogen. Under this protective atmosphere, the air-sensitive sample is mounted in the specimen holder and inserted in the vacuum of the electron microscope. Rb6C60 which is prepared and transferred into the microscope in this way has been investigated by transmission electron microscopy (TEM). The results confirm the bcc structure and especially the location of the rubidium atoms.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.436
Times cited: 2
DOI: 10.1016/0304-3991(94)90077-9
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“Some examples of electron microscopy studies of microstructures and phase transitions in solids”. Schryvers D, Van Tendeloo G, van Landuyt J, Amelinckx S, Meccanica 30, 433 (1995). http://doi.org/10.1007/BF01557075
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.949
Times cited: 1
DOI: 10.1007/BF01557075
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“Stress analysis with convergent beam electron diffraction around NMOS transistors”. Stuer G, Bender H, van Landuyt J, Eyben P, , 359 (2001)
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT); Internet Data Lab (IDLab)
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“Structural aspects of AuCu I or AuCu II and a cuboidal black configuration of f.c.c. disordered phase in AuCu-Pt and AuCu-Ag pseudobinary alloys”. Udoh K-I, El- Araby AM, Tanaka Y, Hisatsune K, Yasuda K, Van Tendeloo G, van Landuyt J, Materials science and engineering: part A: structural materials: properties, microstructure and processing 203, 154 (1995). http://doi.org/10.1016/0921-5093(95)09850-X
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.567
Times cited: 15
DOI: 10.1016/0921-5093(95)09850-X
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“Structural aspects of carbon nanotubes”. Bernaerts D, Amelinckx S, Zhang XB, Van Tendeloo G, van Landuyt J, , 551 (1995)
Keywords: P3 Proceeding; Electron microscopy for materials research (EMAT)
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“Structural aspects of CVD idamond wafers grown at different hydrogen flow rates”. Nistor L, van Landuyt J, Ralchenko V, Physica status solidi: A: applied research 171, 5 (1999). http://doi.org/10.1002/(SICI)1521-396X(199907)174:1<5::AID-PSSA5>3.3.CO;2-3
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 15
DOI: 10.1002/(SICI)1521-396X(199907)174:1<5::AID-PSSA5>3.3.CO;2-3
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“Structural characterisation of erbium silicide thin films of an Si(111) substrate”. Frangis N, Van Tendeloo G, van Landuyt J, Muret P, Nguyen TTA, Journal of alloys and compounds 234, 244 (1996). http://doi.org/10.1016/0925-8388(95)02131-0
Abstract: ErSi2-x films (x = 0.1-0.3) grown by co-evaporation at different deposition ratios have been characterised by transmission electron microscopy, electron diffraction and high resolution electron microscopy. A very good epitaxial growth relation with the Si substrate was deduced for a1 samples and observed phases. Different defect modulated structures are formed; they can be described as structural variants (orthorhombic or rhombohedral) of the basic structure. The modulated phases are related to deviations from stoichiometry similar to crystallographic shear structures. The ErSi1.9 material contains Si precipitates, illustrating the preference for the ErSi1.7 composition to be maintained.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 2.999
Times cited: 14
DOI: 10.1016/0925-8388(95)02131-0
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