Home | << 1 >> |
![]() |
Record | |||||
---|---|---|---|---|---|
Author | Lu, A.K.A.; Pourtois, G.; Luisier, M.; Radu, I.P.; Houssa, M. | ||||
Title | On the electrostatic control achieved in transistors based on multilayered MoS2 : a first-principles study | Type | A1 Journal article | ||
Year | 2017 | Publication | Journal of applied physics | Abbreviated Journal | |
Volume | 121 | Issue | 4 | Pages | 044505 |
Keywords | A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) | ||||
Abstract | In this work, the electrostatic control in metal-oxide-semiconductor field-effect transistors based on MoS2 is studied, with respect to the number of MoS2 layers in the channel and to the equivalent oxide thickness of the gate dielectric, using first-principles calculations combined with a quantum transport formalism. Our simulations show that a compromise exists between the drive current and the electrostatic control on the channel. When increasing the number of MoS2 layers, a degradation of the device performances in terms of subthreshold swing and OFF currents arises due to the screening of the MoS2 layers constituting the transistor channel. Published by AIP Publishing. | ||||
Address | |||||
Corporate Author | Thesis | ||||
Publisher | Place of Publication | Editor | |||
Language | Wos | 000393480100030 | Publication Date | 2017-01-26 | |
Series Editor | Series Title ![]() |
Abbreviated Series Title | |||
Series Volume | Series Issue | Edition | |||
ISSN | 0021-8979; 1089-7550 | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
Impact Factor | Times cited | Open Access | |||
Notes | Approved | no | |||
Call Number | UA @ admin @ c:irua:152673 | Serial | 8329 | ||
Permanent link to this record |