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Author | Smeyers, R.; Milošević, M.V.; Covaci, L. | ||||
Title | Strong gate-tunability of flat bands in bilayer graphene due to moiré encapsulation between hBN monolayers | Type | A1 Journal article | ||
Year | 2023 | Publication | Nanoscale | Abbreviated Journal | |
Volume | 15 | Issue | 9 | Pages | 4561-4569 |
Keywords | A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT) | ||||
Abstract | When using hexagonal boron-nitride (hBN) as a substrate for graphene, the resulting moire pattern creates secondary Dirac points. By encapsulating a multilayer graphene within aligned hBN sheets the controlled moire stacking may offer even richer benefits. Using advanced tight-binding simulations on atomistically-relaxed heterostructures, here we show that the gap at the secondary Dirac point can be opened in selected moire-stacking configurations, and is independent of any additional vertical gating of the heterostructure. On the other hand, gating can broadly tune the gap at the principal Dirac point, and may thereby strongly compress the first moire mini-band in width against the moire-induced gap at the secondary Dirac point. We reveal that in hBN-encapsulated bilayer graphene this novel mechanism can lead to isolated bands flatter than 10 meV under moderate gating, hence presenting a convenient pathway towards electronically-controlled strongly-correlated states on demand. | ||||
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Corporate Author | Thesis | ||||
Publisher | Place of Publication | Editor | |||
Language | Wos | 000933052600001 | Publication Date | 2023-02-07 | |
Series Editor | Series Title ![]() |
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Series Volume | Series Issue | Edition | |||
ISSN | 2040-3364; 2040-3372 | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
Impact Factor | 6.7 | Times cited | Open Access | OpenAccess | |
Notes | Approved | Most recent IF: 6.7; 2023 IF: 7.367 | |||
Call Number | UA @ admin @ c:irua:195249 | Serial | 7340 | ||
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