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Author | Peelaers, H.; Partoens, B.; Peeters, F.M. | ||||
Title | Properties of B and P doped Ge nanowires | Type | A1 Journal article | ||
Year | 2007 | Publication | Applied physics letters | Abbreviated Journal | Appl Phys Lett |
Volume | 90 | Issue | Pages | 263103,1-3 | |
Keywords | A1 Journal article; Condensed Matter Theory (CMT) | ||||
Abstract | |||||
Address | |||||
Corporate Author | Thesis | ||||
Publisher | American Institute of Physics | Place of Publication | New York, N.Y. | Editor | |
Language | Wos | 000247625500068 | Publication Date | 2007-06-25 | |
Series Editor | Series Title | Abbreviated Series Title | |||
Series Volume | Series Issue | Edition | |||
ISSN | 0003-6951; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
Impact Factor | 3.411 | Times cited | 35 | Open Access | |
Notes | Approved | Most recent IF: 3.411; 2007 IF: 3.596 | |||
Call Number | UA @ lucian @ c:irua:69642 | Serial | 2728 | ||
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