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Author
Title
Year
Publication
Volume
Times cited
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Lu, A.K.A.
;
Houssa, M.
;
Luisier, M.
;
Pourtois, G.
Impact of layer alignment on the behavior of MoS
2
-ZrS
2
tunnel field-effect transistors : an ab initio study
2017
Physical review applied
8
6
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