“Reactive plasma cleaning and restoration of transition metal dichalcogenide monolayers”. Marinov D, de Marneffe J-F, Smets Q, Arutchelvan G, Bal KM, Voronina E, Rakhimova T, Mankelevich Y, El Kazzi S, Nalin Mehta A, Wyndaele P-J, Heyne MH, Zhang J, With PC, Banerjee S, Neyts EC, Asselberghs I, Lin D, De Gendt S, npj 2D Materials and Applications 5, 17 (2021). http://doi.org/10.1038/s41699-020-00197-7
Abstract: The cleaning of two-dimensional (2D) materials is an essential step in the fabrication of future devices, leveraging their unique physical, optical, and chemical properties. Part of these emerging 2D materials are transition metal dichalcogenides (TMDs). So far there is limited understanding of the cleaning of “monolayer” TMD materials. In this study, we report on the use of downstream H<sub>2</sub>plasma to clean the surface of monolayer WS<sub>2</sub>grown by MOCVD. We demonstrate that high-temperature processing is essential, allowing to maximize the removal rate of polymers and to mitigate damage caused to the WS<sub>2</sub>in the form of sulfur vacancies. We show that low temperature in situ carbonyl sulfide (OCS) soak is an efficient way to resulfurize the material, besides high-temperature H<sub>2</sub>S annealing. The cleaning processes and mechanisms elucidated in this work are tested on back-gated field-effect transistors, confirming that transport properties of WS<sub>2</sub>devices can be maintained by the combination of H<sub>2</sub>plasma cleaning and OCS restoration. The low-damage plasma cleaning based on H<sub>2</sub>and OCS is very reproducible, fast (completed in a few minutes) and uses a 300 mm industrial plasma etch system qualified for standard semiconductor pilot production. This process is, therefore, expected to enable the industrial scale-up of 2D-based devices, co-integrated with silicon technology.
Keywords: A1 Journal article; Engineering sciences. Technology; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
DOI: 10.1038/s41699-020-00197-7
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“Figure of merit for and identification of sub-60 mV/decade devices”. Vandenberghe WG, Verhulst AS, Sorée B, Magnus W, Groeseneken G, Smets Q, Heyns M, Fischetti MV, Applied physics letters 102, 013510 (2013). http://doi.org/10.1063/1.4773521
Abstract: A figure of merit I60 is proposed for sub-60 mV/decade devices as the highest current where the input characteristics exhibit a transition from sub- to super-60 mV/decade behavior. For sub-60 mV/decade devices to be competitive with metal-oxide-semiconductor field-effect devices, I60 has to be in the 1-10 μA/μm range. The best experimental tunnel field-effect transistors (TFETs) in the literature only have an I60 of 6×10-3 μA/μm but using theoretical simulations, we show that an I60 of up to 10 μA/μm should be attainable. It is proven that the Schottky barrier FET (SBFET) has a 60 mV/decade subthreshold swing limit while combining a SBFET and a TFET does improve performance.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 64
DOI: 10.1063/1.4773521
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“InGaAs tunnel diodes for the calibration of semi-classical and quantum mechanical band-to-band tunneling models”. Smets Q, Verreck D, Verhulst AS, Rooyackers R, Merckling C, Van De Put M, Simoen E, Vandervorst W, Collaert N, Thean VY, Sorée B, Groeseneken G, Heyns MM;, Journal of applied physics 115, 184503 (2014). http://doi.org/10.1063/1.4875535
Abstract: Promising predictions are made for III-V tunnel-field-effect transistor (FET), but there is still uncertainty on the parameters used in the band-to-band tunneling models. Therefore, two simulators are calibrated in this paper; the first one uses a semi-classical tunneling model based on Kane's formalism, and the second one is a quantum mechanical simulator implemented with an envelope function formalism. The calibration is done for In0.53Ga0.47As using several p+/intrinsic/n+ diodes with different intrinsic region thicknesses. The dopant profile is determined by SIMS and capacitance-voltage measurements. Error bars are used based on statistical and systematic uncertainties in the measurement techniques. The obtained parameters are in close agreement with theoretically predicted values and validate the semi-classical and quantum mechanical models. Finally, the models are applied to predict the input characteristics of In0.53Ga0.47As n- and p-lineTFET, with the n-lineTFET showing competitive performance compared to MOSFET.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.068
Times cited: 34
DOI: 10.1063/1.4875535
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“Perspective of tunnel-FET for future low-power technology nodes”. Verhulst AS, Verreck D, Smets Q, Kao K-H, Van de Put M, Rooyackers R, Sorée B, Vandooren A, De Meyer K, Groeseneken G, Heyns MM, Mocuta A, Collaert N, Thean AV-Y, 2014 Ieee International Electron Devices Meeting (iedm) (2014)
Keywords: P1 Proceeding; Condensed Matter Theory (CMT)
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“Band-Tails Tunneling Resolving the Theory-Experiment Discrepancy in Esaki Diodes”. Bizindavyi J, Verhulst AS, Smets Q, Verreck D, Sorée B, Groeseneken G, IEEE journal of the Electron Devices Society 6, 633 (2018). http://doi.org/10.1109/JEDS.2018.2834825
Abstract: Discrepancies exist between the theoretically predicted and experimentally measured performance of band-to-band tunneling devices, such as Esaki diodes and tunnel field-effect transistors (TFETs). We resolve this discrepancy for highly-doped, direct-bandgap Esaki diodes by successfully calibrating a semi-classical model for high-doping-induced ballistic band-tails tunneling currents at multiple temperatures with two In0.53Ga0.47As Esaki diodes using their SIMS doping profiles, C-V characteristics and their forward-bias current density in the negative differential resistance (NDR) regime. The current swing in the NDR regime is shown not to be linked to the band-tails Urbach energy. We further demonstrate theoretically that the calibrated band-tails contribution is also the dominant band-tails contribution to the subthreshold swing of the corresponding TFETs. Lastly, we verify that the presented procedure is applicable to all direct-bandgap semiconductors by successfully applying it to InAs Esaki diodes in literature.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.141
Times cited: 5
DOI: 10.1109/JEDS.2018.2834825
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