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| Author | Clima, S.; Govoreanu, B.; Jurczak, M.; Pourtois, G. | ||||
| Title | HfOx as RRAM material : first principles insights on the working principles | Type | A1 Journal article | ||
| Year | 2014 | Publication | Microelectronic engineering | Abbreviated Journal | Microelectron Eng |
| Volume | 120 | Issue | Pages | 13-18 | |
| Keywords | A1 Journal article; Engineering sciences. Technology; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) | ||||
| Abstract | First-principles simulations were employed to gain atomistic insights on the working principles of amorphous HfO2 based Resistive Random Access Memory stack: the nature of the defect responsible for the switching between the High and Low Resistive States has been unambiguously identified to be the substoichiometric Hf sites (commonly called oxygen vacancy-V-O) and the kinetics of the process have been investigated through the study of O diffusion. Also the role of each material layer in the TiN/HfO2/Hf/TiN RRAM stack and the impact of the deposition techniques have been examined: metallic Hf sputtering is needed to provide an oxygen exchange layer that plays the role of defect buffer. TiN shall be a good defect barrier for O but a bad defect buffer layer. A possible scenario to explain the device degradation (switching failure) mechanism has been proposed – the relaxation of the metastable amorphous phase towards crystalline structure leads to denser, more structured cluster that can increase the defect migration barriers. (C) 2013 Elsevier B.V. All rights reserved. | ||||
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| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Amsterdam | Editor | ||
| Language | Wos | 000336697300004 | Publication Date | 2013-08-19 | |
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue  |
Edition | |||
| ISSN | 0167-9317; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
| Impact Factor | 1.806 | Times cited | 22 | Open Access | |
| Notes | Approved | Most recent IF: 1.806; 2014 IF: 1.197 | |||
| Call Number | UA @ lucian @ c:irua:117767 | Serial | 3535 | ||
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