Lubyshev, D.; Fastenau, J.M.; Fang, X.-M.; Wu, Y.; Doss, C.; Snyder, A.; Liu, W.K.; Lamb, M.S.M.; Bals, S.; Song, C. |
Comparison of As- and P-based metamorphic buffers for high performance InP heterojunction bipolar transistor and high electron mobility transistor applications |
2004 |
Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena |
22 |
25 |
UA library record; WoS full record; WoS citing articles |