“Magnetoconductance through a chain of rings with or without periodically modulated spin-orbit interaction strength and magnetic field”. Molnár B, Vasilopoulos P, Peeters FM, Physical review : B : condensed matter and materials physics 72, 075330 (2005). http://doi.org/10.1103/PhysRevB.72.075330
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 52
DOI: 10.1103/PhysRevB.72.075330
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“Magnetoexciton in vertically coupled InP/GaInP quantum disks: effect of strain on the exciton ground state”. Janssens KL, Partoens B, Peeters FM, Physical review : B : condensed matter and materials physics 69, 235320 (2004). http://doi.org/10.1103/PhysRevB.69.235320
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 9
DOI: 10.1103/PhysRevB.69.235320
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“Magnetoexcitons in type-II self-assembled quantum dots and quantum-dot superlattices”. Veljkovic D, Tadić, M, Peeters FM, Recent developments in advanced materials and processes 518, 51 (2006)
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
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“Magnetoplasma excitations in vertically coupled quantum dot systems”. Partoens B, Matulis A, Peeters FM, Materials science forum 297/298, 225 (1999)
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
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“Magnetoplasma excitations of two vertically coupled dots”. Partoens B, Matulis A, Peeters FM, Physical review : B : condensed matter and materials physics 57, 13039 (1998). http://doi.org/10.1103/PhysRevB.57.13039
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 15
DOI: 10.1103/PhysRevB.57.13039
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“Magnetopolaron effect in parabolic quantum wells in tilted magnetic fields”. Hai GQ, Peeters FM, Physical review : B : condensed matter and materials physics 60, 8984 (1999). http://doi.org/10.1103/PhysRevB.60.8984
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 36
DOI: 10.1103/PhysRevB.60.8984
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“Magnetopolaron effect on shallow donor states in GaAs”. Shi JM, Peeters FM, Devreese JT, Physical review : B : condensed matter and materials physics 48, 5202 (1993). http://doi.org/10.1103/PhysRevB.48.5202
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Impact Factor: 3.736
Times cited: 58
DOI: 10.1103/PhysRevB.48.5202
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“Magnetopolaron effect on shallow donors in GaAs”. Cheng J-P, McCombe BD, Shi JM, Peeters FM, Devreese JT, Physical review : B : condensed matter and materials physics 48, 7910 (1993)
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Impact Factor: 3.736
Times cited: 46
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“Magnetopolaron effect on the donor transition energies in ZnSe”. Shi JM, Peeters FM, Devreese JT, Imanaka Y, Miura N, Physical review : B : condensed matter and materials physics 52, 17205 (1995). http://doi.org/10.1103/PhysRevB.52.17205
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Impact Factor: 3.736
Times cited: 7
DOI: 10.1103/PhysRevB.52.17205
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“Magnetoresistance in multilayer fullerene spin valves: A first-principles study”. Çakir D, Otalvaro DM, Brocks G, Physical review : B : condensed matter and materials physics 90, 245404 (2014). http://doi.org/10.1103/PhysRevB.90.245404
Abstract: Carbon-based molecular semiconductors are explored for application in spintronics because their small spinorbit coupling promises long spin lifetimes. We calculate the electronic transport from first principles through spin valves comprising bi-and tri-layers of the fullerene molecules C-60 and C-70, sandwiched between two Fe electrodes. The spin polarization of the current, and the magnetoresistance depend sensitively on the interactions at the interfaces between the molecules and the metal surfaces. They are much less affected by the thickness of the molecular layers. A high current polarization (CP > 90%) and magnetoresistance (MR > 100%) at small bias can be attained using C-70 layers. In contrast, the current polarization and the magnetoresistance at small bias are vanishingly small for C-60 layers. Exploiting a generalized Julliere model we can trace the differences in spin-dependent transport between C-60 and C-70 layers to differences between the molecule-metal interface states. These states also allow one to interpret the current polarization and the magnetoresistance as a function of the applied bias voltage.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 13
DOI: 10.1103/PhysRevB.90.245404
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“Magnetoresistance of a two-dimensional electron gas in weakly modulated magnetic fields”. Matulis A, Peeters FM, Physical review : B : condensed matter and materials physics 62, 91 (2000). http://doi.org/10.1103/PhysRevB.62.91
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 41
DOI: 10.1103/PhysRevB.62.91
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“Magnetoresistance oscillations in superconducting strips : a Ginzburg-Landau study”. Berdiyorov GR, Chao XH, Peeters FM, Wang HB, Moshchalkov VV, Zhu BY, Physical review : B : condensed matter and materials physics 86, 224504 (2012). http://doi.org/10.1103/PhysRevB.86.224504
Abstract: Within the time-dependent Ginzburg-Landau theory we study the dynamic properties of current-carrying superconducting strips in the presence of a perpendicular magnetic field. We found pronounced voltage peaks as a function of the magnetic field, the amplitude of which depends both on sample dimensions and external parameters. These voltage oscillations are a consequence of moving vortices, which undergo alternating static and dynamic phases. At higher fields or for high currents, the continuous motion of vortices is responsible for the monotonic background on which the resistance oscillations due to the entry of additional vortices are superimposed. Mechanisms for such vortex-assisted resistance oscillations are discussed. Qualitative changes in the magnetoresistance curves are observed in the presence of random defects, which affect the dynamics of vortices in the system.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 31
DOI: 10.1103/PhysRevB.86.224504
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“Magnetotransport in a pseudomorhic GaAs/Ga0.8In0.2As/Ga0.75Al0.25As heterostructure with a Si δ-doping layer”. van der Burgt M, Karavolas VC, Peeters FM, Singleton J, Nicholas RJ, Herlach F, Harris JJ, van Hove M, Borghs G, Physical review : B : condensed matter and materials physics 52, 12218 (1995)
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.736
Times cited: 35
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“Magnetotransport in a pseudomorphic GaAs/Ga0.8In0.2As/Ga0.75Al0.25As heterostructure with a Si \delta-doping layer”. van der Burgt M, Karavolas VC, Peeters FM, Singleton J, Nicholas RJ, Herlach F, Harris JJ, Van Hove M, Borghs G, Physical review : B : condensed matter and materials physics 52, 12218 (1995). http://doi.org/10.1103/PhysRevB.52.12218
Abstract: Magnetotransport properties of a pseudomorphic GsAs/Ga0.8In0.2As/Ga0.75Al0.25As heterostructure are investigated in pulsed magnetic fields up to 50 T and at temperatures of T = 1.4 and 4.2 K. The structure studied consists of a Si delta layer parallel to a Ga0.8In0.2As quantum well (QW). The dark electron density of the structure is n(c) = 1.67 x 10(16) m(-2). By illumination the density can be increased up to a factor of 4; this way the second subband in the Ga0.08In0.2As QW can become populated as well as the Si delta layer. The presence of electrons in the delta layer results in drastic changes in the transport data, especially at magnetic fields beyond 30 T. The phenomena observed are interpreted as (i) magnetic freeze-out of carriers in the delta layer when a low density of electrons is present in the delta layer, and (ii) quantization of the electron motion in the two-dimensional electron gases in both the Ga0.8In0.2As QW and the Si delta layer in the case of high densities. These conclusions are corroborated by the numerical results of our theoretical model. We obtain satisfactory agreement between model and experiment.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.736
Times cited: 43
DOI: 10.1103/PhysRevB.52.12218
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“Magnetotransport in periodically modulated bilayer graphene”. Zarenia M, Vasilopoulos P, Peeters FM, Physical review : B : condensed matter and materials physics 85, 245426 (2012). http://doi.org/10.1103/PhysRevB.85.245426
Abstract: Magnetotransport in bilayer graphene in the presence of a weak and periodic potential is investigated in the presence of a perpendicular magnetic field B. The modulation broadens the Landau levels into bands and for weak magnetic fields leads to the well-known Weiss oscillations in their bandwidth and their transport coefficients at very low B and to the Shubnikov-de Haas oscillations at larger B. The amplitude of the Weiss oscillations is severely reduced if the periodic potentials applied to the two layers oscillate out of phase. We also contrast some results with those corresponding to single-layer graphene. Relative to them the flat-band condition and the oscillation amplitude differ substantially, due to the interlayer coupling, and agree only when this coupling is extremely weak. We further show that the Hall conductivity exhibits the well-known steps at half-integer and integer multiples of 4e(2)/h in single-layer and bilayer graphene, respectively, even for very weak magnetic fields. The results are pertinent to weak and periodic corrugations when the potential modulation dominates the strain-induced magnetic modulation.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 21
DOI: 10.1103/PhysRevB.85.245426
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“Magnetotunneling of holes through single and double barriers using a multiband treatment”. Krstajić, P, Peeters FM, Physical review : B : condensed matter and materials physics 71, 115321 (2005). http://doi.org/10.1103/PhysRevB.71.115321
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 5
DOI: 10.1103/PhysRevB.71.115321
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“Majorana fermion states and fractional flux periodicity in mesoscopic d-wave superconducting loops with spin-orbit interaction”. Zha G-Q, Covaci L, Peeters FM, Zhou S-P, Physical review : B : condensed matter and materials physics 90, 014522 (2014). http://doi.org/10.1103/PhysRevB.90.014522
Abstract: We numerically investigate the spin-orbit (SO) coupling effect on the magnetic flux evolution of energy and supercurrent in mesoscopic d-wave superconducting loops by solving the spin-generalized Bogoliubov-de Gennes equations self-consistently. It is found that the energy spectrum splits when the SO interaction is involved and the Majorana zero mode can be realized in the [100] edges of square systems for an appropriate SO coupling strength. Superconducting phase transitions appear when the energy gap closes, accompanied by energy jumps between different energy parabolas in the ground state, which provides a possible mechanism to support fractional flux periodicity of supercurrent. Moreover, in the case of rectangular loops with SO coupling, the jumps of the ground-state energy gradually disappear by increasing the ratio of length to height of the sample, and a paramagnetic response with opposite direction of the screening current around zero flux value can occur in such systems.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 7
DOI: 10.1103/PhysRevB.90.014522
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“Mapping electronic reconstruction at the metal-insulator interface in LaVO3/SrVO3 heterostructures”. Tan H, Egoavil R, Béché, A, Martinez GT, Van Aert S, Verbeeck J, Van Tendeloo G, Rotella H, Boullay P, Pautrat A, Prellier W, Physical review : B : condensed matter and materials physics 88, 155123 (2013). http://doi.org/10.1103/PhysRevB.88.155123
Abstract: A (LaVO3)6/(SrVO3)(3) superlattice is studied with a combination of sub-A resolved scanning transmission electron microscopy and monochromated electron energy-loss spectroscopy. The V oxidation state is mapped with atomic spatial resolution enabling us to investigate electronic reconstruction at the LaVO3/SrVO3 interfaces. Surprisingly, asymmetric charge distribution is found at adjacent chemically symmetric interfaces. The local structure is proposed and simulated with a double channeling calculation which agrees qualitatively with our experiment. We demonstrate that local strain asymmetry is the likely cause of the electronic asymmetry of the interfaces. The electronic reconstruction at the interfaces extends much further than the chemical composition, varying from 0.5 to 1.2 nm. This distance corresponds to the length of charge transfer previously found in the (LaVO3)./(SrVO3). metal/insulating and the (LaAlO3)./(SrTiO3). insulating/insulating interfaces.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 15
DOI: 10.1103/PhysRevB.88.155123
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“Mapping spin-polarized transitions with atomic resolution”. Schattschneider P, Schaffer B, Ennen I, Verbeeck J, Physical review : B : condensed matter and materials physics 85, 134422 (2012). http://doi.org/10.1103/PhysRevB.85.134422
Abstract: The coupling of angstrom-sized electron probes with spin-polarized electronic transitions shows that the inelastically scattered probe electron is in a mixed state containing electron vortices with nonzero orbital angular momentum. These electrons create an asymmetric intensity distribution in energy filtered diffraction patterns, giving access to maps of the magnetic moments with atomic resolution. A feasibility experiment shows evidence of the predicted effect. Potential applications are column-by-column maps of magnetic ordering, and the creation of angstrom-sized free electrons with orbital angular momentum by inelastic scattering in a thin ferromagnetic foil.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 41
DOI: 10.1103/PhysRevB.85.134422
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“Martensitic transformations and microstructures in splat-cooled Ni-Al”. Schryvers D, Holland-Moritz D, Materials science and engineering: part A: structural materials: properties, microstructure and processing 273/275, 697 (1999). http://doi.org/10.1016/S0921-5093(99)00399-8
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.094
Times cited: 6
DOI: 10.1016/S0921-5093(99)00399-8
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“Masking effect of heat dissipation on the current-voltage characteristics of a mesoscopic superconducting sample with leads”. Vodolazov DY, Peeters FM, Morelle M, Moshchalkov VV, Physical review : B : condensed matter and materials physics 71, 184502 (2005). http://doi.org/10.1103/PhysRevB.71.184502
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 43
DOI: 10.1103/PhysRevB.71.184502
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“Measurement of the mean inner potential of ZnO nanorods by transmission electron holography”. Müller E, Kruse P, Gerthsen D, Schowalter M, Rosenauer A, Lamoen D, Kling R, Microscopy of Semiconducting Materials 107SPRINGER PROCEEDINGS IN PHYSICS, 303 (2005)
Keywords: A1 Journal article; Electron Microscopy for Materials Science (EMAT)
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“Measurement of the size of embedded metal clusters by mass spectrometry, transmission electron microscopy, and small-angle X-ray scattering”. Hendrich C, Favre L, Ievlev DN, Dobrynin AN, Bras W, Hörmann U, Piscopiello E, Van Tendeloo G, Lievens P, Temst K, Applied physics A : materials science &, processing 86, 533 (2007). http://doi.org/10.1007/s00339-006-3808-5
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.455
Times cited: 11
DOI: 10.1007/s00339-006-3808-5
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“Measuring strain fields and concentration gradients around Ni4Ti3 precipitates”. Schryvers D, Tirry W, Yang ZQ;, Materials science and engineering A: structural materials properties microstructure and processing 438, 485 (2006). http://doi.org/10.1016/j.msea.2006.02.166
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.094
Times cited: 35
DOI: 10.1016/j.msea.2006.02.166
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“Measuring the corrugation amplitude of suspended and supported graphene”. Kirilenko DA, Dideykin AT, Van Tendeloo G, Physical review : B : condensed matter and materials physics 84, 235417 (2011). http://doi.org/10.1103/PhysRevB.84.235417
Abstract: Nanoscale corrugation is a fundamental property of graphene arising from its low-dimensional nature. It places a fundamental limit to the conductivity of graphene and influences its properties. However the degree of the influence of the corrugation has not been well established because of the little knowledge about its spectrum in suspended graphene. We present a transmission electron microscopy technique that enables us to measure the average corrugation height and length. We applied the technique also to measure the temperature dependence of the corrugation. The difference in corrugation between suspended and supported graphene has been illustrated.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 31
DOI: 10.1103/PhysRevB.84.235417
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“Mécanismes de la non-stoechiométrie dans les nouveaux supraconducteurs à, haute Tc”. Hervieu M, Michel C, Martin C, Huvé, M, Van Tendeloo G, Maignan A, Pelloquin D, Goutenoire F, Raveau B, Journal de physique: 3: applied physics, materials science, fluids, plasma and instrumentation 4, 2057 (1994)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“Mechanical resonance of the austenite/martensite interface and the pinning of the martensitic microstructures by dislocations in Cu74.08Al23.13Be2.79”. Salje EKH, Zhang H, Idrissi H, Schryvers D, Carpenter MA, Moya X, Planes A, Physical review: B: condensed matter and materials physics 80, 134114 (2009). http://doi.org/10.1103/PhysRevB.80.134114
Abstract: A single crystal of Cu74.08Al23.13Be2.79 undergoes a martensitic phase transition at 246 and 232 K under heating and cooling, respectively. The phase fronts between the austenite and martensite regions of the sample are weakly mobile with a power-law resonance under external stress fields. Surprisingly, the martensite phase is elastically much harder than the austenite phase showing that interfaces between various crystallographic variants are strongly pinned and cannot be moved by external stress while the phase boundary between the austenite and martensite regions in the sample remains mobile. This unusual behavior was studied by dynamical mechanical analysis (DMA) and resonant ultrasound spectroscopy. The remnant strain, storage modulus, and internal friction were recorded simultaneously for different applied forces in DMA. With increasing forces, the remnant strain increases monotonously while the internal friction peak height shows a minimum at 300 mN. Transmission electron microscopy shows that the pinning is generated by dislocations which are inherited from the austenite phase.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 38
DOI: 10.1103/PhysRevB.80.134114
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“Mechanical switching of nanoscale multiferroic phase boundaries”. Li YJ, Wang JJ, Ye JC, Ke XX, Gou GY, Wei Y, Xue F, Wang J, Wang CS, Peng RC, Deng XL, Yang Y, Ren XB, Chen LQ, Nan CW, Zhang JX;, Advanced functional materials 25, 3405 (2015). http://doi.org/10.1002/adfm.201500600
Abstract: Tuning the lattice degree of freedom in nanoscale functional crystals is critical to exploit the emerging functionalities such as piezoelectricity, shape-memory effect, or piezomagnetism, which are attributed to the intrinsic lattice-polar or lattice-spin coupling. Here it is reported that a mechanical probe can be a dynamic tool to switch the ferroic orders at the nanoscale multiferroic phase boundaries in BiFeO3 with a phase mixture, where the material can be reversibly transformed between the soft tetragonal-like and the hard rhombohedral-like structures. The microscopic origin of the nonvolatile mechanical switching of the multiferroic phase boundaries, coupled with a reversible 180 degrees rotation of the in-plane ferroelectric polarization, is the nanoscale pressure-induced elastic deformation and reconstruction of the spontaneous strain gradient across the multiferroic phase boundaries. The reversible control of the room-temperature multiple ferroic orders using a pure mechanical stimulus may bring us a new pathway to achieve the potential energy conversion and sensing applications.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 12.124
Times cited: 23
DOI: 10.1002/adfm.201500600
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“Mechanisms for the trimethylaluminum reaction in aluminum oxide atomic layer deposition on sulfur passivated germanium”. Delabie A, Sioncke S, Rip J, van Elshocht S, Caymax M, Pourtois G, Pierloot K, The journal of physical chemistry: C : nanomaterials and interfaces 115, 17523 (2011). http://doi.org/10.1021/jp206070y
Abstract: Germanium combined with high-κ dielectrics is investigated for the next generations of CMOS devices. Therefore, we study reaction mechanisms for Al2O3 atomic layer deposition on sulfur passivated Ge using calculations based on density functional theory and total reflection X-ray fluorescence (TXRF). TXRF indicates 6 S/nm2 and 4 Al/nm2 after the first TMA/H2O reaction cycle, and growth inhibition from the second reaction cycle on. Calculations are performed on molecular clusters representing −GeSH surface sites. The calculations confirm that the TMA reaction does not affect the S content. On fully SH-terminated Ge, TMA favorably reacts with up to three −GeSH sites, resulting in a near tetrahedral Al coordination. Electron deficient structures with a GeS site shared between two Al atoms are proposed. The impact of the cluster size on the structures and reaction energetics is systematically investigated.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 4.536
Times cited: 9
DOI: 10.1021/jp206070y
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“Mechanisms of double magnetic exchange in dilute magnetic semiconductors”. Fleurov V, Kikoin K, Ivanov VA, Krstajic PM, Peeters FM, Journal of magnetism and magnetic materials
T2 –, International Conference on Magnetism (ICM 2003), JUL 27-AUG 01, 2003, Rome, ITALY 272, 1967 (2004). http://doi.org/10.1016/j.jmmm.2003.12.1067
Abstract: A microscopic Hamiltonian for interacting manganese impurities in dilute magnetic semiconductors (DMS) is derived. It is shown that in p-type III-V DMS, the indirect exchange between Mn impurities has similarities with the Zener mechanism in transition metal oxides. Here the mobile and localized holes near the top of the valence band play the role of unoccupied p-orbitals which induce ferromagnetism. T-C estimated from the proposed kinematic exchange agrees with experiments on (Ga,Mn)As. The model is also applicable to the p-doped (Ga,Mn)P system. The magnetic ordering in n-type (Ga,Mn)N is due to exchange between the electrons localized on the levels lying deep in the forbidden energy gap. This mechanism is even closer to the original Zener mechanism. (C) 2003 Elsevier B.V. All rights reserved.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.63
Times cited: 12
DOI: 10.1016/j.jmmm.2003.12.1067
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