“Importance of twinning in static and dynamic compression of a Ti-6Al-4V titanium alloy with an equiaxed microstructure”. Coghe F, Tirry W, Rabet L, Schryvers D, Van Houtte P, Materials science and engineering: part A: structural materials: properties, microstructure and processing 537, 1 (2012). http://doi.org/10.1016/j.msea.2011.12.047
Abstract: Whereas deformation twinning is known to be an important deformation mechanism for hexagonal materials like magnesium and pure titanium, so far almost no literature exists on the twinning behaviour of the Ti-6Al-4V alloy. In this work it was shown that the activation of twinning as a deformation mechanism could have a pronounced effect on the mechanical behaviour of the Ti-6Al-4V alloy. This effect is even more pronounced under dynamic loading conditions. Transmission electron microscopy showed that only the {1 0 1 2}{1 0 1 1} tensile twin system was activated under certain loading conditions. Light-optical microscopy and electron backscatter diffraction data were afterwards used to experimentally determine the twin fractions. The importance of twinning for the texture evolution was also studied. It was shown that even small twin fractions can lead to distinct texture features, especially due to the discrete reorientation of the c-axes. The experimental results were compared to simulated results that were obtained with a viscoplastic self-consistent crystal plasticity code, after experimental validation that twinning can be reliably modelled as a unidirectional slip system. Although good agreement was obtained for the experimental and simulated stress-strain curves, the simulated results concerning twinning correlated well only on a qualitative basis as the simulated twin fractions were systematically higher than the experimental fractions. This seems to strengthen the hypothesis made by other research groups that complete grains might reorient by twinning. (C) 2011 Elsevier B.V. All rights reserved.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 3.094
Times cited: 35
DOI: 10.1016/j.msea.2011.12.047
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“Improved hybrid Monte Carlo-fluid model for the electrical characteristics in an analytical radiofrequency glow discharge in argon”. Bogaerts A, Gijbels R, Goedheer W, Journal of analytical atomic spectrometry 16, 750 (2001). http://doi.org/10.1039/b103768b
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 3.379
Times cited: 11
DOI: 10.1039/b103768b
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“Improved multislice calculations for including higher-order Laue zones effects”. Lobato I, van Dyck D, Ultramicroscopy 119, 63 (2012). http://doi.org/10.1016/j.ultramic.2012.01.003
Abstract: A new method for including higher-order Laue zones (HOLZs) effects in an efficient way in electron scattering simulations has been developed and tested by detail calculations. The calculated results by the conventional multislice (CMS) method and the improved conventional multislice (ICMS) method using a large dynamical aperture to avoid numerical errors are compared with accurate results. We have found that the zero-order Laue zones (ZOLZs) reflection cannot be properly described only using the projected potential in the whole unit cell; in general, we need to subslice the electrostatic potential inside the unit cell. It is shown that the ICMS method has higher accuracy than the CMS method for the calculation of the ZOLZ, HOLZ and Pseudo-HOLZ reflections. Hence, ICMS method allows to use a larger slice thickness than the CMS method and reduces the calculation time. (C) 2012 Elsevier B.V. All rights reserved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 2.843
Times cited: 6
DOI: 10.1016/j.ultramic.2012.01.003
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“Improved source design for p-type tunnel field-effect transistors : towards truly complementary logic”. Verreck D, Verhulst AS, Sorée B, Collaert N, Mocuta A, Thean A, Groeseneken G, Applied physics letters 105, 243506 (2014). http://doi.org/10.1063/1.4904712
Abstract: Complementary logic based on tunnel field-effect transistors (TFETs) would drastically reduce power consumption thanks to the TFET's potential to obtain a sub-60 mV/dec subthreshold swing (SS). However, p-type TFETs typically do not meet the performance of n-TFETs for direct bandgap III-V configurations. The p-TFET SS stays well above 60 mV/dec, due to the low density of states in the conduction band. We therefore propose a source configuration in which a highly doped region is maintained only near the tunnel junction. In the remaining part of the source, the hot carriers in the exponential tail of the Fermi-Dirac distribution are blocked by reducing the doping degeneracy, either with a source section with a lower doping concentration or with a heterostructure. We apply this concept to n-p-i-p configurations consisting of In0.53Ga0.47As and an InP-InAs heterostructure. 15-band quantum mechanical simulations predict that the configurations with our source design can obtain sub-60 mV/dec SS, with an on-current comparable to the conventional source design. (C) 2014 AIP Publishing LLC.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 10
DOI: 10.1063/1.4904712
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“Improvement of the oxidation stability and the mechanical properties of flexible graphite foil by boron oxide impregnation”. Savchenko DV, Serdan AA, Morozov VA, Van Tendeloo G, Ionov SG, New carbon materials 27, 12 (2012). http://doi.org/10.1016/S1872-5805(12)60001-8
Abstract: Flexible graphite foil produced by rolling expanded graphite impregnated with boron oxide was analyzed by laser mass spectroscopy, X-ray photoelectron spectroscopy, scanning electron microscopy and thermogravimetry. It was shown that the modification of the graphite foil by boron oxide increases the onset temperature of oxidation by ∼ 150 °C. Impregnation of less than 2 mass% boron oxide also increased the tensile strength of the materials. The observed improvement was attributed to the blocking of active sites by boron oxide, which is probably chemically bonded to the edges of graphene sheets in expanded graphite particles.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 5
DOI: 10.1016/S1872-5805(12)60001-8
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“Improving dielectric barrier discharge efficiency by optimizing voltage profiles”. Martens T, Brok WJM, van Dijk J, Bogaerts A, , 95 (2009)
Keywords: P1 Proceeding; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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“Impurity band and magnetic-field-induced metal-insulator transition in a doped GaAs/AlxGa1-xAs superlattice”. Hilber W, Helm M, Peeters FM, Alavi K, Pathak RN, Physical review : B : condensed matter and materials physics 53, 6919 (1996). http://doi.org/10.1103/PhysRevB.53.6919
Abstract: A combination of infrared spectroscopy and magnetotransport is used to investigate the impurity band and the magnetic-field-induced metal-insulator transition in n-type GaAs/AlxGa1-xAs superlattices. The dropping of the Fermi level from the conduction band into the impurity band upon increasing magnetic field is observed in a sample doped to n=4n(c), where n(c) is the critical density according to the Mott criterion. The metal-insulator transition takes place while the Fermi level is in the impurity band, with no qualitative change from the metallic to the insulating side. Due to the anisotropy of the superlattice band structure, the metal-insulator transition is shifted to higher magnetic field, when the magnetic field is tilted away from the growth axis towards the layer planes.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.736
Times cited: 14
DOI: 10.1103/PhysRevB.53.6919
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“Impurity-induced modulations of orders in d-wave superconductors”. Zha G-Q, Chen Y, Peeters FM, Zhou S-P, Physical review : B : solid state 80, 064518 (2009). http://doi.org/10.1103/PhysRevB.80.064518
Abstract: By using a model Hamiltonian with competing antiferromagnetic (AFM) and d-wave superconductivity orders, the impurity-induced structures of orders in d-wave superconductors is investigated. We find that the transition between one-dimensional stripe and two-dimensional checkerboardlike modulation around a single nonmagnetic impurity can take place as the strength of the AFM interaction U or the impurity scattering strength V0 is varied. It is also found that the impurity-induced stripe can first transit to checkerboardlike modulation and then disappears with increasing the next-nearest-neighbor hopping strength |t|. Phase diagrams of V0 versus U and |t| for various modulations of the spin order are presented. In addition, the quantum interference effect on the modulations of orders due to two strong nonmagnetic impurities is briefly examined, and the checkerboardlike and quasistripe patterns can occur depending on the sites where two impurities are placed.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 3
DOI: 10.1103/PhysRevB.80.064518
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“In-phase motion of Josephson vortices in stacked SNS Josephson junctions : effect of ordered pinning”. Berdiyorov GR, Savel'ev SE, Kusmartsev FV, Peeters FM, Superconductor science and technology 26, 125010 (2013). http://doi.org/10.1088/0953-2048/26/12/125010
Abstract: The dynamics of Josephson vortices (fluxons) in artificial stacks of superconducting-normal-superconducting Josephson junctions is investigated using the anisotropic time-dependent Ginzburg-Landau theory in the presence of a square/rectangular array of pinning centers (holes). For small values of the applied drive, fluxons in different junctions move out of phase, forming a periodic triangular lattice. A rectangular lattice of moving fluxons is observed at larger currents, which is in agreement with previous theoretical predictions (Koshelev and Aranson 2000 Phys. Rev. Lett. 85 3938). This 'superradiant' flux-flow state is found to be stable in a wide region of applied current. The stability range of this ordered state is considerably larger than the one obtained for the pinning-free sample. Clear commensurability features are observed in the current-voltage characteristics of the system with pronounced peaks in the critical current at (fractional) matching fields. The effect of density and strength of the pinning centers on the stability of the rectangular fluxon lattice is discussed. Predicted synchronized motion of fluxons in the presence of ordered pinning can be detected experimentally using the rf response of the system, where enhancement of the Shapiro-like steps is expected due to the synchronization.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.878
Times cited: 5
DOI: 10.1088/0953-2048/26/12/125010
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“In-plane magnetic-field-induced Wigner crystallization in a two-electron quantum dot”. Szafran B, Peeters FM, Bednarek S, Adamowski J, Physical review : B : condensed matter and materials physics 70, 235335 (2004). http://doi.org/10.1103/PhysRevB.70.235335
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 7
DOI: 10.1103/PhysRevB.70.235335
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“In-situ chemical trapping of oxygen in the splitting of carbon dioxide by plasma”. Aerts R, Snoeckx R, Bogaerts A, Plasma processes and polymers 11, 985 (2014). http://doi.org/10.1002/ppap.201400091
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.846
Times cited: 29
DOI: 10.1002/ppap.201400091
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“In situ high resolution electron microscopy observation of electron-irradiation-induced martensitic transformation in a Ni63Al37 alloy”. Muto S, Schryvers D, Journal of alloys and compounds 199, 1 (1993). http://doi.org/10.1016/0925-8388(93)90422-J
Abstract: An electron-irradiation-induced transformation from cubic beta2 austenite to monoclinic 7M martensite was observed in situ under high resolution electron microscopy conditions in a thin foil of Ni63Al37 beta2 phase (B2, CsCl structure), with the start temperature of the martensitic transformation below but very close to room temperature. The structure of the martensite is consistent with thermoelastic or stress-induced martensite at this composition, including the existence of multiple stacking faults. The transformation is described by a gradual increase in the shear and shuffle amplitudes already existing in the precursor domains. Possible origins of the transformation are discussed.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 2.999
Times cited: 8
DOI: 10.1016/0925-8388(93)90422-J
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“In situ HREM irradiation study of point-defect clustering in MBE-grown strained Si1-xGex/(001)Si structures”. Fedina L, Lebedev OI, Van Tendeloo G, van Landuyt J, Mironov OA, Parker EHC, Physical review : B : condensed matter and materials physics 61, 10336 (2000). http://doi.org/10.1103/PhysRevB.61.10336
Abstract: We present a detailed analysis of the point-defect clustering in strained Si/Si(1-x)Ge(x)/(001)Si structures, including the interaction of the point defects with the strained interfaces and the sample surface during 400 kV electron irradiation at room temperature. Point-defect cluster formation is very sensitive to the type and magnitude of the strain in the Si and Si(1-x)Ge(x) layers. A small compressive strain (-0.3%) in the SiGe alloy causes an aggregation of vacancies in the form of metastable [110]-oriented chains. They are located on {113} planes and further recombine with interstitials. Tensile strain in the Si layer causes an aggregation of interstitial atoms in the forms of additional [110] rows which are inserted on {113} planes with [001]-split configurations. The chainlike configurations are characterized by a large outward lattice relaxation for interstitial rows (0.13 +/-0.01 nm) and a very small inward relaxation for vacancy chains (0.02+/-0.01 nm). A compressive strain higher than -0.5% strongly decreases point-defect generation inside the strained SiGe alloy due to the large positive value of the formation volume of a Frenkel pair. This leads to the suppression of point-defect clustering in a strained SiGe alloy so that SiGe relaxes via a diffusion of vacancies from the Si layer, giving rise to an intermixing at the Si/SiGe interface. In material with a 0.9% misfit a strongly increased flow of vacancies from the Si layer to the SiGe layer and an increased biaxial strain in SiGe bath promote the preferential aggregation of vacancies in the (001) plane, which relaxes to form intrinsic 60 degrees dislocation loops.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 27
DOI: 10.1103/PhysRevB.61.10336
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“In-situ HREM irradiation study of point defect clustering in strained GexSi1-x/(001)Si heterostructure”. Fedina L, Lebedev OI, Van Tendeloo G, van Landuyt J, Conference series of the Institute of Physics 157, 55 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 1
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“In-situ HREM observation of electron-irradation-induced martensitic transformation in a Ni63Al37 alloy”. Muto S, Schryvers D, Journal of alloys and compounds 199, 1 (1993)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.999
Times cited: 8
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“In situ HREM study of electron irradiation effects in AgCl microcrystals”. Goessens C, Schryvers D, de Keyzer R, van Landuyt J Eurem 92, Granada, page 646 (1992).
Keywords: H3 Book chapter; Electron microscopy for materials research (EMAT)
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“In situ HREM study of electron irradiation effects in AgCl microcrystals”. Goessens C, Schryvers D, van Landuyt J, de Keyzer R, Ultramicroscopy 40, 151 (1992). http://doi.org/10.1016/0304-3991(92)90056-P
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.436
Times cited: 10
DOI: 10.1016/0304-3991(92)90056-P
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“In-situ HVEM study of dislocation generation in patterned stress fields at silicon surfaces”. Vanhellemont J, Claeys C, van Landuyt J, Physica status solidi: A: applied research 150, 497 (1995). http://doi.org/10.1002/pssa.2211500144
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 6
DOI: 10.1002/pssa.2211500144
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“In situ investigation of the fast microstructure evolution during electropulse treatment of cold drawn NiTi wires”. Malard B, Pilch J, Sittner P, Delville R, Curfs C, Acta materialia 59, 1542 (2011). http://doi.org/10.1016/j.actamat.2010.11.018
Abstract: Microstructural changes taking place during the heat treatment of cold-worked NiTi alloy are of key interest in shape memory alloy technology, since they are responsible for setting the austenite shape and functional properties of the heat-treated alloy. In this work, microstructural evolution during non-conventional electropulse heat treatment of thin NiTi filaments was investigated in a unique high-speed in situ synchrotron X-ray diffraction experiment with simultaneous evaluation of the tensile force and electrical resistivity of the treated wire. The in situ results provide direct experimental evidence on the evolution of the internal stress and density of defects during fast heating from 20 °C to ∼700 °C. This evidence is used to characterize a sequence of dynamic recovery and recrystallization processes responsible for the microstructure and superelastic functional property changes during the electropulse treatments.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 5.301
Times cited: 48
DOI: 10.1016/j.actamat.2010.11.018
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“In situ study of the phase transition in Bi2Ti4O11”. Nistor L, Van Tendeloo G, Amelinckx S, Kahlenberg V, Böhm H, Journal of solid state chemistry 119, 281 (1995). http://doi.org/10.1016/0022-4596(95)80042-N
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.133
Times cited: 10
DOI: 10.1016/0022-4596(95)80042-N
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“In-situ TEM study of the Ni5Al3 to B2 + L12 decomposition in Ni65Al35”. Schryvers D, Ma Y, Materials letters 23, 105 (1995). http://doi.org/10.1016/0167-577X(95)00030-5
Abstract: Homogenised and quenched Ni65Al35 samples were heated and studied in situ in a CM20 electron microscope up to 900 degrees C. The Ni5Al3 phase first forming around 550 degrees C in the quenched L1(0) microtwinned martensite starts to decompose around 800 degrees C yielding B2 precipitates in a twinned L1(2) matrix. The latter twinning is a remainder of the microtwinning in the original room temperature martensite. Also the crystallographic relations between precipitates and matrix can be traced back to the original formation of twinned martensite plates within the austenite. Some aspects of the dynamics of the process are discussed on the basis of snap shots and video recordings.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.489
Times cited: 5
DOI: 10.1016/0167-577X(95)00030-5
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“In situ transmission electron microscopy of stress-induced martensite with focus on martensite twinning”. Tirry W, Schryvers D, Materials science and engineering: part A: structural materials: properties, microstructure and processing 481, 420 (2008). http://doi.org/10.1016/j.msea.2006.12.214
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.094
Times cited: 22
DOI: 10.1016/j.msea.2006.12.214
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“In situ transmission electron microscopy study of Ni silicide phases formed on (001) Si active lines”. Teodorescu V, Nistor L, Bender H, Steegen A, Lauwers A, Maex K, van Landuyt J, Journal of applied physics 90, 167 (2001). http://doi.org/10.1063/1.1378812
Abstract: The formation of Ni silicides is studied by transmission electron microscopy during in situ heating experiments of 12 nm Ni layers on blanket silicon, or in patterned structures covered with a thin chemical oxide. It is shown that the first phase formed is the NiSi2 which grows epitaxially in pyramidal crystals. The formation of NiSi occurs quite abruptly around 400 degreesC when a monosilicide layer covers the disilicide grains and the silicon in between. The NiSi phase remains stable up to 800 degreesC, at which temperature the layer finally fully transforms to NiSi2. The monosilicide grains show different epitaxial relationships with the Si substrate. Ni2Si is never observed. (C) 2001 American Institute of Physics.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.068
Times cited: 97
DOI: 10.1063/1.1378812
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“In situ transmission electron microscopy study of the silicidation process in Co thin films on patterned (001) Si substrates”. Ghica C, Nistor L, Bender H, Steegen A, Lauwers A, Maex K, van Landuyt J, Journal of materials research 16, 701 (2001). http://doi.org/10.1557/JMR.2001.0121
Abstract: The results of an in situ transmission electron microscopy study of the formation of Co-silicides on patterned (001) Si substrates are discussed. It is shown that the results of the in situ heating experiments agreed very well with the data based on standard rapid thermal annealing experiments. Fast heating rates resulted in better definition of the silicide lines. Also, better lines were obtained for samples that received already a low-temperature ex situ anneal. A Ti cap layer gave rise to a higher degree of epitaxy in the CoSi2 silicide.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.673
Times cited: 4
DOI: 10.1557/JMR.2001.0121
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“Inactivation of the endotoxic biomolecule lipid A by oxygen plasma species : a reactive molecular dynamics study”. Yusupov M, Neyts EC, Verlackt CC, Khalilov U, van Duin ACT, Bogaerts A, Plasma processes and polymers 12, 162 (2015). http://doi.org/10.1002/ppap.201400064
Abstract: Reactive molecular dynamics simulations are performed to study the interaction of reactive oxygen species, such as OH, HO2 and H2O2, with the endotoxic biomolecule lipid A of the gram-negative bacterium Escherichia coli. It is found that the aforementioned plasma species can destroy the lipid A, which consequently results in reducing its toxic activity. All bond dissociation events are initiated by hydrogen-abstraction reactions. However, the mechanisms behind these dissociations are dependent on the impinging plasma species, i.e. a clear difference is observed in the mechanisms upon impact of HO2 radicals and H2O2 molecules on one hand and OH radicals on the other hand. Our simulation results are in good agreement with experimental observations.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.846
Times cited: 18
DOI: 10.1002/ppap.201400064
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“InAs p-n diodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy”. Dobbelaere W, de Boeck J, Heremans P, Mertens R, Borghs G, Luyten W, van Landuyt J, Applied physics letters 60, 868 (1992). http://doi.org/10.1063/1.106490
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.302
Times cited: 20
DOI: 10.1063/1.106490
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“InAs0.85Sb0.15 infrared photodiodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy”. Dobbelaere W, de Boeck J, Heremans P, Mertens R, Borghs G, Luyten W, van Landuyt J, Applied physics letters 600, 3256 (1992). http://doi.org/10.1063/1.106711
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.302
Times cited: 32
DOI: 10.1063/1.106711
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“Inclusions in magnetron sputtered YBa2Cu3-x MxO7-d thin films: a study by means of electron microscopy”. Verbist K, Van Tendeloo G, Ye M, Schroeder J, Mehbod M, Deltour R, Microscopy, microanalysis, microstructures 7, 17 (1996). http://doi.org/10.1051/mmm:1996104
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 6
DOI: 10.1051/mmm:1996104
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“Incommensurate crystallographic shear structures and magnetic properties of the cation deficient perovskite (Sr0.61Pb0.18)(Fe0.75Mn0.25)O2.29”. Malo S, Lepoittevin C, Pérez O, Hébert S, Van Tendeloo G, Hervieu M, Chemistry of materials 22, 1788 (2010). http://doi.org/10.1021/cm903288s
Abstract: The origin of the incommensurability in the crystallographic shear (CS) structure of the ferri-Manganite (Sr0.61Pb0.18)(Fe0.75Mn0.25)O2.29, related to the cation deficient perovskite, has been determined by careful analysis of the boundaries between the two variants constituting the phasoid. High Resolution Electron Microscopy/HAADF-STEM images allow the structural mechanisms to be understood through the presence of structural units common to both phases, responsible of the incommensurate character observed in the electron diffraction patterns. The structural analysis allows for identifying different types of CS phases in the Pb−Sr−Fe(Mn)−O diagram and shows that the stabilization of the six-sided tunnels requires a higher A/B cationic ratio. A description of these phases is proposed through simple structural building units (SBU), based on chains of octahedra bordered by two pyramids. The (Sr0.61Pb0.18)(Fe0.75Mn0.25)O2.29 CS compound exhibits a strong antiferromagnetic and insulating behavior, similar to the Fe-2201 and terrace ferrites but differs by the presence of a hysteresis, with a small coercive field.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 9.466
Times cited: 6
DOI: 10.1021/cm903288s
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“Incommensurate modulation and luminescence in the CaGd2(1-x)Eu2x(MoO4)4(1-y)(WO)4y (0\leq x\leq1, 0\leq y\leq1) red phosphors”. Morozov VA, Bertha A, Meert KW, Van Rompaey S, Batuk D, Martinez GT, Van Aert S, Smet PF, Raskina MV, Poelman D, Abakumov AM, Hadermann J;, Chemistry of materials 25, 4387 (2013). http://doi.org/10.1021/cm402729r
Abstract: Scheelite related compounds (A',A '') [(B',B '')O-4], with B', B '' = W and/or Mo are promising new light-emitting materials for photonic applications, including phosphor converted LEDs (light-emitting diodes). In this paper, the creation and ordering of A-cation vacancies and the effect of cation substitutions in the scheelite-type framework are investigated as a factor for controlling the scheelite-type structure and luminescent properties. CaGd2(1-x)Eu2x(MoO4)(4(1-y))(WO4)(4y) (0 <= x <= 1, 0 <= y <= 1) solid solutions with scheelite-type structure were synthesized by a solid state method, and their structures were investigated using a combination of transmission electron microscopy techniques and powder X-ray diffraction. Within this series all complex molybdenum oxides have (3 + 2)D incommensurately modulated structures with superspace group I4(1)/a(alpha,beta,0)00(-beta,alpha,0)00, while the structures of all tungstates are (3 + 1)D incommensurately modulated with superspace group I2/b(alpha beta 0)00. In both cases the modulation arises because of cation-vacancy ordering at the A site. The prominent structural motif is formed by columns of A-site vacancies running along the c-axis. These vacant columns occur in rows of two or three aligned along the [110] direction of the scheelite subcell. The replacement of the smaller Gd3+ by the larger Eu3+ at the A-sublattice does not affect the nature of the incommensurate modulation, but an increasing replacement of Mo6+ by W6+ switches the modulation from (3 + 2)D to (3 + 1)D regime. Thus, these solid solutions can be considered as a model system where the incommensurate modulation can be monitored as a function of cation nature while the number of cation vacancies at the A sites remain constant upon the isovalent cation replacement. All compounds' luminescent properties were measured, and the optical properties were related to the structural properties of the materials. CaGd2(1-x)(MoO4)(4(1-y))(WO4)(4y) phosphors emit intense red light dominated by the D-5(0)-F-7(2) transition at 612 nm, along with other transitions from the D-5(1) and D-5(0) excited states. The intensity of the 5D0-7F2 transition reaches a maximum at x = 0.5 for y = 0 and 1.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 9.466
Times cited: 63
DOI: 10.1021/cm402729r
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