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“Capabilities of TOF-SIMS to study the influence of different oxidation conditions on metal contamination redistribution”. de Witte H, de Gendt S, Douglas M, Conard T, Kenis K, Mertens PW, Vandervorst W, Gijbels R s.n., Leuven, page 147 (1999).
Keywords: H1 Book chapter; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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“Anion ordering in fluorinated La2CuO4”. Hadermann J, Abakumov AM, Van Tendeloo G, Shpanchenko RV, Oleinikov PN, Antipov EV s.l., page 133 (1999).
Keywords: H1 Book chapter; Electron microscopy for materials research (EMAT)
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“Anion ordering in fluorinated La2CuO4”. Abakumov AM, Hadermann J, Van Tendeloo G, Shpanchenko RV, Oleinikov PN, Antipov EV, Journal of solid state chemistry 142, 311 (1999). http://doi.org/10.1006/jssc.1998.8064
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.299
Times cited: 20
DOI: 10.1006/jssc.1998.8064
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“Aerosol synthesis of nanostructured, ultrafine fullerene particles”. Joutsensaari J, Ahonen PP, Tapper U, Kauppinen EI, Pauwels B, Amelinckx S, Van Tendeloo G, (1999)
Keywords: P3 Proceeding; Electron microscopy for materials research (EMAT)
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“Advanced TEM studies of martensite and related phase transformations”. Schryvers D s.l., page 947 (1999).
Keywords: H1 Book chapter; Electron microscopy for materials research (EMAT)
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“Accurate infrared spectroscopy determination of interstitial and precipitated oxygen in highly doped Czochralski-grown silicon”. de Gryse O, Clauws P, Rossou L, van Landuyt J, Vanhellemont J, The review of scientific instruments 70, 3661 (1999). http://doi.org/10.1063/1.1149974
Abstract: A method has been developed to determine the interstitial and precipitated oxygen concentration in highly doped n- and p-type silicon. 10-30-mu m-thin silicon samples in a mechanical stress-free state and without alteration of the thermal history are prepared and measured with Fourier transform infrared spectroscopy at 5.5-6 K. The measured oxygen contents in the as-grown Si samples agree well with those obtained with gas fusion analysis. In the highly boron-doped samples, the interstitial oxygen can be determined down to 10(17) cm(-3). (C) 1999 American Institute of Physics. [S0034-6748(99)04909-6].
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.515
Times cited: 5
DOI: 10.1063/1.1149974
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“Accurate infrared absorption measurement of interstitial and precipitated oxygen in p+ silicon wafers”. De Gryse O, Clauws P, Rossou L, van Landuyt J, Vanhellemont J, Microelectronic engineering 45, 277 (1999). http://doi.org/10.1016/S0167-9317(99)00180-X
Abstract: A novel infrared absorption method has been developed to measure [he interstitial oxygen concentration in highly doped silicon. Thin samples of the order of 10-30 mu m are prepared in an essentially stress-free state without changing the state of the crystal. The oxygen concentration is then determined by measuring the height of the 1136-cm(-1) absorption peak due to interstitial oxygen at 5.5 K. The obtained results on as-grown samples are compared with those from gas fusion analysis. The precipitated oxygen concentration in annealed samples is also determined with the new method. It will be shown that the interstitial oxygen concentration in highly doped silicon can be determined with high accuracy and down to concentrations of 10(17) cm(-3). (C) 1999 Elsevier Science B.V. All rights reserved.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 1.806
DOI: 10.1016/S0167-9317(99)00180-X
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