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Author | Moors, K.; Soree, B.; Tokei, Z.; Magnus, W. | ||||
Title | Electron relaxation times and resistivity in metallic nanowires due to tilted grain boundary planes | Type | P1 Proceeding | ||
Year | 2015 | Publication | On Ultimate Integration On Silicon (eurosoi-ulis) | Abbreviated Journal | |
Volume | Issue | Pages | 201-204 | ||
Keywords | P1 Proceeding; Condensed Matter Theory (CMT) | ||||
Abstract | We calculate the resistivity contribution of tilted grain boundaries with varying parameters in sub-10nm diameter metallic nanowires. The results have been obtained with the Boltzmann transport equation and Fermi's golden rule, retrieving correct state-dependent relaxation times. The standard approximation schemes for the relaxation times are shown to fail when grain boundary tilt is considered. Grain boundaries tilted under the same angle or randomly tilted induce a resistivity decrease. | ||||
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Corporate Author | Thesis | ||||
Publisher | Ieee | Place of Publication | New york | Editor | |
Language | Wos | Publication Date | |||
Series Editor | Series Title | Abbreviated Series Title | |||
Series Volume | Series Issue | Edition | |||
ISSN | 978-1-4799-6911-1 | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
Impact Factor | Times cited | Open Access | |||
Notes | Approved | Most recent IF: NA | |||
Call Number | UA @ lucian @ c:irua:144776 | Serial | 4651 | ||
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