“Fractal design of hierarchical PtPd with enhanced exposed surface atoms for highly catalytic activity and stability”. Ying J, Xiao Y, Chen J, Hu Z-Y, Tian G, Van Tendeloo G, Zhang Y, Symes MDD, Janiak C, Yang X-Y, Nano letters 23, 7371 (2023). http://doi.org/10.1021/ACS.NANOLETT.3C01190
Abstract: Hierarchicalassembly of arc-like fractal nanostructures not onlyhas its unique self-similarity feature for stability enhancement butalso possesses the structural advantages of highly exposed surface-activesites for activity enhancement, remaining a great challenge for high-performancemetallic nanocatalyst design. Herein, we report a facile strategyto synthesize a novel arc-like hierarchical fractal structure of PtPdbimetallic nanoparticles (h-PtPd) by using pyridinium-type ionic liquidsas the structure-directing agent. Growth mechanisms of the arc-likenanostructured PtPd nanoparticles have been fully studied, and precisecontrol of the particle sizes and pore sizes has been achieved. Dueto the structural features, such as size control by self-similaritygrowth of subunits, structural stability by nanofusion of subunits,and increased numbers of exposed active atoms by the curved homoepitaxialgrowth, h-PtPd displays outstanding electrocatalytic activity towardoxygen reduction reaction and excellent stability during hydrothermaltreatment and catalytic process.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 10.8
DOI: 10.1021/ACS.NANOLETT.3C01190
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“Intra-zero-energy Landau level crossings in bilayer graphene at high electric fields”. Xiang F, Gupta A, Chaves A, Krix ZE, Watanabe K, Taniguchi T, Fuhrer MS, Peeters FM, Neilson D, Milošević, MV, Hamilton AR, Nano letters 23, 9683 (2023). http://doi.org/10.1021/ACS.NANOLETT.3C01456
Abstract: The highly tunable band structure of the zero-energy Landau level (zLL) of bilayer graphene makes it an ideal platform for engineering novel quantum states. However, the zero-energy Landau level at high electric fields has remained largely unexplored. Here we present magnetotransport measurements of bilayer graphene in high transverse electric fields. We observe previously undetected Landau level crossings at filling factors nu = -2, 1, and 3 at high electric fields. These crossings provide constraints for theoretical models of the zero-energy Landau level and show that the orbital, valley, and spin character of the quantum Hall states at high electric fields is very different from low electric fields. At high E, new transitions between states at nu = -2 with different orbital and spin polarization can be controlled by the gate bias, while the transitions between nu = 0 -> 1 and nu = 2 -> 3 show anomalous behavior.
Keywords: A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Impact Factor: 10.8
Times cited: 1
DOI: 10.1021/ACS.NANOLETT.3C01456
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“Unconventional superconducting diode effects via antisymmetry and antisymmetry breaking”. Li C, Lyu Y-Y, Yue W-C, Huang P, Li H, Li T, Wang C-G, Yuan Z, Dong Y, Ma X, Tu X, Tao T, Dong S, He L, Jia X, Sun G, Kang L, Wang H, Peeters FM, Milošević, MV, Wu P, Wang Y-L, Nano letters 24, 4108 (2024). http://doi.org/10.1021/ACS.NANOLETT.3C05008
Abstract: Symmetry breaking plays a pivotal role in unlocking intriguing properties and functionalities in material systems. For example, the breaking of spatial and temporal symmetries leads to a fascinating phenomenon: the superconducting diode effect. However, generating and precisely controlling the superconducting diode effect pose significant challenges. Here, we take a novel route with the deliberate manipulation of magnetic charge potentials to realize unconventional superconducting flux-quantum diode effects. We achieve this through suitably tailored nanoengineered arrays of nanobar magnets on top of a superconducting thin film. We demonstrate the vital roles of inversion antisymmetry and its breaking in evoking unconventional superconducting effects, namely a magnetically symmetric diode effect and an odd-parity magnetotransport effect. These effects are nonvolatilely controllable through in situ magnetization switching of the nanobar magnets. Our findings promote the use of antisymmetry (breaking) for initiating unconventional superconducting properties, paving the way for exciting prospects and innovative functionalities in superconducting electronics.
Keywords: A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Impact Factor: 10.8
DOI: 10.1021/ACS.NANOLETT.3C05008
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“Unveiling the 3D morphology of epitaxial GaAs/AlGaAs quantum dots”. Zhang Y, Grunewald L, Cao X, Abdelbarey D, Zheng X, Rugeramigabo EP, Verbeeck J, Zopf M, Ding F, Nano letters 24, 10106 (2024). http://doi.org/10.1021/ACS.NANOLETT.4C02182
Abstract: Strain-free GaAs/AlGaAs semiconductor quantum dots (QDs) grown by droplet etching and nanohole infilling (DENI) are highly promising candidates for the on-demand generation of indistinguishable and entangled photon sources. The spectroscopic fingerprint and quantum optical properties of QDs are significantly influenced by their morphology. The effects of nanohole geometry and infilled material on the exciton binding energies and fine structure splitting are well-understood. However, a comprehensive understanding of GaAs/AlGaAs QD morphology remains elusive. To address this, we employ high-resolution scanning transmission electron microscopy (STEM) and reverse engineering through selective chemical etching and atomic force microscopy (AFM). Cross-sectional STEM of uncapped QDs reveals an inverted conical nanohole with Al-rich sidewalls and defect-free interfaces. Subsequent selective chemical etching and AFM measurements further reveal asymmetries in element distribution. This study enhances the understanding of DENI QD morphology and provides a fundamental three-dimensional structural model for simulating and optimizing their optoelectronic properties.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 10.8
DOI: 10.1021/ACS.NANOLETT.4C02182
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