“Formation of metallic In in InGaN/GaN multiquantum wells”. van Daele B, Van Tendeloo G, Jacobs K, Moerman I, Leys M, Applied physics letters 85, 4379 (2004). http://doi.org/10.1063/1.1815054
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 32
DOI: 10.1063/1.1815054
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“Ga segregation in DyBa2Cu3O7-\delta/PrBa2Cu3-xGaxO7-\delta/DyBa2Cu3O7-\delta ramp-type Josephson junctions”. Verbist K, Lebedev OI, Van Tendeloo G, Verhoeven MAJ, Rijnders AJHM, Blank DHA, Rogalia H, Applied physics letters 70, 1167 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 8
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“Generalized phonon-assisted Zener tunneling in indirect semiconductors with non-uniform electric fields : a rigorous approach”. Vandenberghe W, Sorée B, Magnus W, Fischetti MV, Journal of applied physics 109, 124503 (2011). http://doi.org/10.1063/1.3595672
Abstract: A general framework to calculate the Zener current in an indirect semiconductor with an externally applied potential is provided. Assuming a parabolic valence and conduction band dispersion, the semiconductor is in equilibrium in the presence of the external field as long as the electron-phonon interaction is absent. The linear response to the electron-phonon interaction results in a non-equilibrium system. The Zener tunneling current is calculated from the number of electrons making the transition from valence to conduction band per unit time. A convenient expression based on the single particle spectral functions is provided, enabling the evaluation of the Zener tunneling current under any three-dimensional potential profile. For a one-dimensional potential profile an analytical expression is obtained for the current in a bulk semiconductor, a semiconductor under uniform field, and a semiconductor under a non-uniform field using the WKB (Wentzel-Kramers-Brillouin) approximation. The obtained results agree with the Kane result in the low field limit. A numerical example for abrupt p-n diodes with different doping concentrations is given, from which it can be seen that the uniform field model is a better approximation than the WKB model, but a direct numerical treatment is required for low bias conditions.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.068
Times cited: 41
DOI: 10.1063/1.3595672
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“Graphene: a perfect nanoballoon”. Leenaerts O, Partoens B, Peeters FM, Applied physics letters 93, 193107 (2008). http://doi.org/10.1063/1.3021413
Abstract: We have performed a first-principles density functional theory investigation of the penetration of helium atoms through a graphene monolayer with defects. The relaxation of the graphene layer caused by the incoming helium atoms does not have a strong influence on the height of the energy barriers for penetration. For defective graphene layers, the penetration barriers decrease exponentially with the size of the defects but they are still sufficiently high that very large defects are needed to make the graphene sheet permeable for small atoms and molecules. This makes graphene a very promising material for the construction of nanocages and nanomembranes.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 295
DOI: 10.1063/1.3021413
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“Graphene-based resonant-tunneling structures”. Milton Pereira J, Vasilopoulos P, Peeters FM, Applied physics letters 90, 132122 (2007). http://doi.org/10.1063/1.2717092
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 147
DOI: 10.1063/1.2717092
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“Graphene hall bar with an asymmetric pn-junction”. Milovanovic SP, Masir MR, Peeters FM, Journal of applied physics 113, 193701 (2013). http://doi.org/10.1063/1.4805350
Abstract: We investigated the magnetic field dependence of the Hall and the bend resistances in the ballistic regime for a single layer graphene Hall bar structure containing a pn-junction. When both regions are n-type the Hall resistance dominates and Hall type of plateaus are formed. These plateaus occur as a consequence of the restriction on the angle imposed by Snell's law allowing only electrons with a certain initial angles to transmit though the potential step. The size of the plateau and its position is determined by the position of the potential interface as well as the value of the applied potential. When the second region is p-type, the bend resistance dominates, which is asymmetric in field due to the presence of snake states. Changing the position of the pn-interface in the Hall bar strongly affects these states and therefore the bend resistance is also changed. Changing the applied potential, we observe that the bend resistance exhibits a peak around the charge-neutrality point (CNP), which is independent of the position of the pn-interface, while the Hall resistance shows a sign reversal when the CNP is crossed, which is in very good agreement with a recent experiment [J. R. Williams and C. M. Marcus, Phys. Rev. Lett. 107, 046602 (2011)].
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.068
Times cited: 7
DOI: 10.1063/1.4805350
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“Graphene on boron-nitride : Moiré, pattern in the van der Waals energy”. Neek-Amal M, Peeters FM, Applied physics letters 104, 041909 (2014). http://doi.org/10.1063/1.4863661
Abstract: The spatial dependence of the van der Waals (vdW) energy between graphene and hexagonal boron-nitride (h-BN) is investigated using atomistic simulations. The van der Waals energy between graphene and h-BN shows a hexagonal superlattice structure identical to the observed Moire pattern in the local density of states, which depends on the lattice mismatch and misorientation angle between graphene and h-BN. Our results provide atomistic features of the weak van der Waals interaction between graphene and BN which are in agreement with experiment and provide an analytical expression for the size of the spatial variation of the weak van der Waals interaction. We also found that the A-B-lattice symmetry of graphene is broken along the armchair direction. (C) 2014 AIP Publishing LLC.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 61
DOI: 10.1063/1.4863661
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“Graphene on hexagonal lattice substrate : stress and pseudo-magnetic field”. Neek-Amal M, Peeters FM, Applied physics letters 104, 173106 (2014). http://doi.org/10.1063/1.4873342
Abstract: Moire patterns in the pseudo-magnetic field and in the strain profile of graphene (GE) when put on top of a hexagonal lattice substrate are predicted from elasticity theory. The van der Waals interaction between GE and the substrate induces out-of-plane deformations in graphene which results in a strain field, and consequently in a pseudo-magnetic field. When the misorientation angle is about 0.5 degrees, a three-fold symmetric strain field is realized that results in a pseudo-magnetic field very similar to the one proposed by F. Guinea, M. I. Katsnelson, and A. K. Geim [Nature Phys. 6, 30 (2010)]. Our results show that the periodicity and length of the pseudo-magnetic field can be tuned in GE by changing the misorientation angle and substrate adhesion parameters and a considerable energy gap (23 meV) can be obtained due to out-of-plane deformation of graphene which is in the range of recent experimental measurements (20-30 meV). (C) 2014 AIP Publishing LLC.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 14
DOI: 10.1063/1.4873342
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“Ground state and normal-mode spectra of a two-dimensional system of dipole particles confined in a parabolic trap”. Munarin FF, Ferreira WP, Farias GA, Peeters FM, Physical review : E : statistical, nonlinear, and soft matter physics 78, 031405 (2008). http://doi.org/10.1103/PhysRevE.78.031405
Abstract: The ordered configurations of a monolayer of interacting magnetic dipoles confined in a circular parabolic potential are investigated as a function of the dipole moment of the particles. Despite the circular confinement, we find very asymmetric ordered structures like chains and Y-shaped configurations when a magnetic field is applied parallel to the plane of the particles. The normal-mode spectrum of the particles and its dependence on the magnetic field and the strength of the dipole moment of the particles are studied. The vibrational and rotational modes of the spectrum, which are associated with the stability of the system, are investigated in detail. The number of particles is varied and we found different ordering of the particles for different values of the dipole moment and the magnetic field. A ring structure with a large number of particles is observed for high values of the dipole moment of the particles.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.366
Times cited: 5
DOI: 10.1103/PhysRevE.78.031405
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“Guided nucleation of superconductivity on a graded magnetic substrate”. Milošević, MV, Gillijns W, Silhanek AV, Libál A, Peeters FM, Moshchalkov VV, Applied physics letters 96, 032503 (2010). http://doi.org/10.1063/1.3293300
Abstract: We demonstrate the controlled spatial nucleation of superconductivity in a thin film deposited on periodic arrays of ferromagnetic dots with gradually increasing diameter. The perpendicular magnetization of the dots induces vortex-antivortex molecules in the sample, with the number of (anti)vortices increasing with magnet size. The resulting gradient of antivortex density between the dots predetermines local nucleation of superconductivity in the sample as a function of the applied external field and temperature. In addition, the compensation between the applied magnetic field and the antivortices results in an unprecedented enhancement of the critical temperature.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 15
DOI: 10.1063/1.3293300
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“Hall magnetometer in the ballistic regime”. Peeters FM, Li XQ, Applied physics letters 72, 572 (1998). http://doi.org/10.1063/1.120759
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 119
DOI: 10.1063/1.120759
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“Hall potentiometer in the ballistic regime”. Baelus BJ, Peeters FM, Applied physics letters 74, 1600 (1999). http://doi.org/10.1063/1.123629
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 13
DOI: 10.1063/1.123629
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“Heating mode transition in a hybrid direct current/dual-frequency capacitively coupled CF4 discharge”. Zhang Q-Z, Wang Y-N, Bogaerts A, Journal of applied physics 115, 223302 (2014). http://doi.org/10.1063/1.4882297
Abstract: Computer simulations based on the particle-in-cell/Monte Carlo collision method are performed to study the plasma characteristics and especially the transition in electron heating mechanisms in a hybrid direct current (dc)/dual-frequency (DF) capacitively coupled CF 4 discharge. When applying a superposed dc voltage, the plasma density first increases, then decreases, and finally increases again, which is in good agreement with experiments. This trend can be explained by the transition between the four main heating modes, i.e., DF coupling, dc and DF coupling, dc source dominant heating, and secondary electron dominant heating.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.068
Times cited: 9
DOI: 10.1063/1.4882297
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“High-field transport properties of graphene”. Dong HM, Xu W, Peeters FM, Journal of applied physics 110, 063704 (2011). http://doi.org/10.1063/1.3633771
Abstract: We present a theoretical investigation on the transport properties of graphene in the presence of high dc driving fields. Considering electron interactions with impurities and acoustic and optical phonons in graphene, we employ the momentum- and energy-balance equations derived from the Boltzmann equation to self-consistently evaluate the drift velocity and temperature of electrons in graphene in the linear and nonlinear response regimes. We find that the current-voltage relation exhibits distinctly nonlinear behavior, especially in the high electric field regime. Under the action of high-fields the large source-drain (sd) current density can be achieved and the current saturation in graphene is incomplete with increasing the sd voltage Vsd up to 3 V. Moreover, for high fields, Vsd>0.1 V, the heating of electrons in graphene occurs. It is shown that the sd current and electron temperature are sensitive to electron density and lattice temperature in the graphene device. This study is relevant to the application of graphene as high-field nano-electronic devices such as graphene field-effect transistors.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.068
Times cited: 17
DOI: 10.1063/1.3633771
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“High resolution electron microscopy and X-ray photoelectron spectroscopy studies of heteroepitaxial SixGe1-x alloys produced through laser induced processing”. Frangis N, van Landuyt J, Lartiprete R, Martelli S, Borsella E, Chiussi S, Castro J, Leon B, Applied physics letters 72, 2877 (1998). http://doi.org/10.1063/1.121487
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 16
DOI: 10.1063/1.121487
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“High resolution electron microscopy study of molecular beam epitaxy grown CoSi2/Si1-xGex/Si(100) heterostructurs”. Buschmann V, Rodewald M, Fuess H, Van Tendeloo G, Schäffer C, Journal of applied physics 85, 2119 (1999). http://doi.org/10.1063/1.369512
Abstract: Two CoSi2/Si1-xGex/Si(100) heterostructures, with different Ge content, made by molecular beam epitaxy are characterized by high resolution electron microscopy. In general, the interface between the CoSi2 thin film and the Si1-xGex layer is of a high structural quality and the strained Si1-xGex layer exhibits few defects. For both samples, different interface structures are present, although the dominant interfacial configuration is similar to the unreconstructed interface present at the CoSi2/Si(100) interface. Only occasionally (2x1) reconstructed interface regions are found which are just a few nanometers in length. Phenomena such as Ge segregation and the introduction of defects are also observed in the Si1-xGex layer. We attribute the minimal presence of the reconstructed interface to both the (2x8):Si1-xGex(100) surface reconstruction and the Ge segregation that takes place. (C) 1999 American Institute of Physics. [S0021-8979(99)02104-0].
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.068
Times cited: 6
DOI: 10.1063/1.369512
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“High resolution transmission electron microscopy characterization of fcc ->, 9R transformation in nanocrystalline palladium films due to hydriding”. Amin-Ahmadi B, Idrissi H, Delmelle R, Pardoen T, Proost J, Schryvers D, Applied physics letters 102, 071911 (2013). http://doi.org/10.1063/1.4793512
Abstract: Sputtered nanocrystalline palladium thin films with nanoscale growth twins have been subjected to hydriding cycles. The evolution of the twin boundaries has been investigated using high resolution transmission electron microscopy. Surprisingly, the Sigma 3{112} incoherent twin boundaries dissociate after hydriding into two phase boundaries bounding a 9R phase. This phase which corresponds to single stacking faults located every three {111} planes in the fcc Pd structure was not expected because of the high stacking fault energy of Pd. This observation is connected to the influence of the Hydrogen on the stacking fault energy of palladium and the high compressive stresses building up during hydriding. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4793512]
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 14
DOI: 10.1063/1.4793512
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“Holotomography: quantitative phase tomography with micrometer resolution using hard synchrotron radiation X-rays”. Cloetens P, Ludwig W, Baruchel J, van Dyck D, van Landuyt J, Guigay JP, Schlenker M, Applied physics letters 75, 2912 (1999). http://doi.org/10.1063/1.125225
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 3.411
Times cited: 481
DOI: 10.1063/1.125225
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“Hybrid ferromagnetic/semiconductor Hall effect device”. Reijniers J, Peeters FM, Applied physics letters 73, 357 (1998). http://doi.org/10.1063/1.121833
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Engineering Management (ENM)
Impact Factor: 3.411
Times cited: 35
DOI: 10.1063/1.121833
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“Hybrid modeling network for a helium-argon-copper hollow cathode discharge used for laser applications”. Bogaerts A, Gijbels R, Journal of applied physics 92, 6408 (2002). http://doi.org/10.1063/1.1517751
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.068
Times cited: 24
DOI: 10.1063/1.1517751
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“Hybrid Monte Carlo-fluid model of a direct current glow discharge”. Bogaerts A, Gijbels R, Goedheer W, Journal of applied physics 78, 2233 (1995). http://doi.org/10.1063/1.360139
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.183
Times cited: 117
DOI: 10.1063/1.360139
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“Hydrogen impurities and native defects in CdO”. Amini MN, Saniz R, Lamoen D, Partoens B, Journal of applied physics 110, 063521 (2011). http://doi.org/10.1063/1.3641971
Abstract: We have used first-principles calculations based on density functional theory to study point defects in CdO within the local density approximation and beyond (LDA+U). Hydrogen interstitials and oxygen vacancies are found to act as shallow donors and can be interpreted as the cause of conductivity in CdO. Hydrogen can also occupy an oxygen vacancy in its substitutional form and also acts as a shallow donor. Similar to what was found for ZnO and MgO, hydrogen creates a multicenter bond with its six oxygen neighbors in CdO. The charge neutrality level for native defects and hydrogen impurities has been calculated. It is shown that in the case of native defects, it is not uniquely defined. Indeed, this level depends highly on the chemical potentials of the species and one can obtain different values for different end states in the experiment. Therefore, a comparison with experiment can only be made if the chemical potentials of the species in the experiment are well defined. However, for the hydrogen interstitial defect, since this level is independent of the chemical potential of hydrogen, one can obtain a unique value for the charge neutrality level. We find that the Fermi level stabilizes at 0.43 eV above the conduction band minimum in the case of the hydrogen interstitial defect, which is in good agreement with the experimentally reported value of 0.4 eV.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT)
Impact Factor: 2.068
Times cited: 13
DOI: 10.1063/1.3641971
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“Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2 : a first principles insight”. Clima S, Wouters DJ, Adelmann C, Schenk T, Schroeder U, Jurczak M, Pourtois G, Applied physics letters 104, 092906 (2014). http://doi.org/10.1063/1.4867975
Abstract: The origin of the ferroelectric polarization switching in orthorhombic HfO2 has been investigated by first principles calculations. The phenomenon can be regarded as being the coordinated displacement of four O ions in the orthorhombic unit cell, which can lead to a saturated polarization as high as 53 mu C/cm(2). We show the correlation between the computed polarization reversal barrier and the experimental coercive fields. (C) 2014 AIP Publishing LLC.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 3.411
Times cited: 79
DOI: 10.1063/1.4867975
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“Impact of field-induced quantum confinement in tunneling field-effect devices”. Vandenberghe WG, Sorée B, Magnus W, Groeseneken G, Fischetti MV, Applied physics letters 98, 143503 (2011). http://doi.org/10.1063/1.3573812
Abstract: Being the working principle of a tunnel field-effect transistor, band-to-band tunneling is given a rigorous quantum mechanical treatment to incorporate confinement effects, multiple electron and hole valleys, and interactions with phonons. The model reveals that the strong band bending near the gate dielectric, required to create short tunnel paths, results in quantization of the energy bands. Comparison with semiclassical models reveals a big shift in the onset of tunneling. The effective mass difference of the distinct valleys is found to reduce the subthreshold swing steepness.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 76
DOI: 10.1063/1.3573812
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“The importance of an external circuit in a particle-in-cell/Monte Carlo collisions model for a direct current planar magnetron”. Bultinck E, Kolev I, Bogaerts A, Depla D, Journal of applied physics 103, 013309 (2008). http://doi.org/10.1063/1.2828155
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.068
Times cited: 29
DOI: 10.1063/1.2828155
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“Improved source design for p-type tunnel field-effect transistors : towards truly complementary logic”. Verreck D, Verhulst AS, Sorée B, Collaert N, Mocuta A, Thean A, Groeseneken G, Applied physics letters 105, 243506 (2014). http://doi.org/10.1063/1.4904712
Abstract: Complementary logic based on tunnel field-effect transistors (TFETs) would drastically reduce power consumption thanks to the TFET's potential to obtain a sub-60 mV/dec subthreshold swing (SS). However, p-type TFETs typically do not meet the performance of n-TFETs for direct bandgap III-V configurations. The p-TFET SS stays well above 60 mV/dec, due to the low density of states in the conduction band. We therefore propose a source configuration in which a highly doped region is maintained only near the tunnel junction. In the remaining part of the source, the hot carriers in the exponential tail of the Fermi-Dirac distribution are blocked by reducing the doping degeneracy, either with a source section with a lower doping concentration or with a heterostructure. We apply this concept to n-p-i-p configurations consisting of In0.53Ga0.47As and an InP-InAs heterostructure. 15-band quantum mechanical simulations predict that the configurations with our source design can obtain sub-60 mV/dec SS, with an on-current comparable to the conventional source design. (C) 2014 AIP Publishing LLC.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 10
DOI: 10.1063/1.4904712
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“In situ transmission electron microscopy study of Ni silicide phases formed on (001) Si active lines”. Teodorescu V, Nistor L, Bender H, Steegen A, Lauwers A, Maex K, van Landuyt J, Journal of applied physics 90, 167 (2001). http://doi.org/10.1063/1.1378812
Abstract: The formation of Ni silicides is studied by transmission electron microscopy during in situ heating experiments of 12 nm Ni layers on blanket silicon, or in patterned structures covered with a thin chemical oxide. It is shown that the first phase formed is the NiSi2 which grows epitaxially in pyramidal crystals. The formation of NiSi occurs quite abruptly around 400 degreesC when a monosilicide layer covers the disilicide grains and the silicon in between. The NiSi phase remains stable up to 800 degreesC, at which temperature the layer finally fully transforms to NiSi2. The monosilicide grains show different epitaxial relationships with the Si substrate. Ni2Si is never observed. (C) 2001 American Institute of Physics.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.068
Times cited: 97
DOI: 10.1063/1.1378812
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“InAs p-n diodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy”. Dobbelaere W, de Boeck J, Heremans P, Mertens R, Borghs G, Luyten W, van Landuyt J, Applied physics letters 60, 868 (1992). http://doi.org/10.1063/1.106490
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.302
Times cited: 20
DOI: 10.1063/1.106490
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“InAs0.85Sb0.15 infrared photodiodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy”. Dobbelaere W, de Boeck J, Heremans P, Mertens R, Borghs G, Luyten W, van Landuyt J, Applied physics letters 600, 3256 (1992). http://doi.org/10.1063/1.106711
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.302
Times cited: 32
DOI: 10.1063/1.106711
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“Incorporating the gas flow in a numerical model of rf discharges in methane”. Okhrimovskyy A, Bogaerts A, Gijbels R, Journal of applied physics 96, 3070 (2004). http://doi.org/10.1063/1.1782951
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.068
Times cited: 11
DOI: 10.1063/1.1782951
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