Number of records found: 167
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Electron microscopy of fullerenes and related materials”. Van Tendeloo G, Amelinckx S Wiley-VCH, Weinheim, page 353 (2000).
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Electron microscopy and scanning microanalysis”. Oleshko V, Gijbels R, Amelinckx S Wiley, Chichester, page 9088 (2000).
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Epitaxial growth of \beta-SiC on ion-beam synthesized \beta-SiC : structural characterization”. Romano-Rodriguez A, Perez-Rodriguez A, Serre C, van Landuyt J, et al, Materials science forum T2 –, International Conference on Silicon Carbide and Related Materials, OCT 10-15, 1999, RES TRIANGLE PK, NORTH CAROLINA 338-3, 309 (2000)
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An extended RF methane plasma 1D fluid model of interest in deposition of diamond-like carbon layers”. Herrebout D, Bogaerts A, Yan M, Goedheer W, Dekempeneer E, Gijbels R, , 399 (2000)
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Functioning of thiocyanate ions during sulphur and sulphur-plus-gold Sensitization”. Charlier E, Gijbels R, Van Doorselaer M, De Keyzer R, , 172 (2000)
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Defect induced thickness growth in silver chloride (111) tabular crystals: a TEM study”. Van Renterghem W, Schryvers D, van Landuyt J, Bollen D, Van Roost C, De Keyzer RB, , 38 (2000)
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The exchange of fluorinated dyes between different types of silver halide microcrystals studied by time of flight secondary ion mass spectrometry (TOF-SIMS)”. Lenaerts J, Verlinden G, Gijbels R, Geuens I, Callant P, , 180 (2000)
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The influence of the precipitation method on defect formation in multishell AgBrI (111) tabular crystals”. Van Renterghem W, Karthauser S, Schryvers D, van Landuyt J, De Keyzer R, Van Roost C, , 167 (2000)
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Einleitung zu den massenspektrometrischen Methoden”. Gijbels R, Adriaens A Schweizerbart, Stuttgart, page 159 (2000).
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Multielementmassenspektrometrie (MMS)”. Jochum KP, Gijbels R, Adriaens A Schweizerbart, Stuttgart, page 188 (2000).
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Polarizability induced cooperative proton ordering, coexistence of order/disorder and displacive dynamics and isotope effects in hydrogen-bonded systems”. Bussmann-Holder A, Dalal N, Michel KH, The journal of physics and chemistry of solids T2 –, Williamsburg Workshop on Ferroelectrics 99, JAN 31-FEB 03, 1999, WILLIAMSBURG, VIRGINIA 61, 271 (2000). http://doi.org/10.1016/S0022-3697(99)00292-9
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The Hall resistivity of a two-dimensional electron gas in the presence of magnetic clusters with perpendicular magnetization”. Reijniers J, Peeters FM, Matulis A, Physica. E: Low-dimensional systems and nanostructures 6, 759 (2000). http://doi.org/10.1016/S1386-9477(99)00197-6
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Interminiband spectroscopy of biased superlattices”. Helm M, Hilber W, Strasser G, de Meester R, Peeters FM, Wacker A, Physica. E: Low-dimensional systems and nanostructures 7, 274 (2000). http://doi.org/10.1016/S1386-9477(99)00275-1
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Intersubband transitions in InAs/GaSb superlattices in a parallel magnetic field”. de Meester RHJ, Peeters FM, Lakrimi M, Nicholas RJ, Poulter AJL, Mason NJ, Walker PJ, Physica. E: Low-dimensional systems and nanostructures 7, 93 (2000)
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The spin structure of two vertically coupled quantum dots”. Partoens B, Peeters FM, Physica. E: Low-dimensional systems and nanostructures 6, 577 (2000). http://doi.org/10.1016/S1386-9477(99)00114-9
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Strong resonant intersubband magnetopolaron effect in heavily modulation-doped GaAs/AlGaAs single quantum wells at high magnetic fields”. Wang YJ, Leem YA, McCombe BD, Wu XG, Peeters FM, Jones E, Reno J, Lee XY, Jiang HW, Physica. E: Low-dimensional systems and nanostructures 6, 195 (2000). http://doi.org/10.1016/S1386-9477(99)00086-7
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Transition from two-dimensional to three-dimensional classical artificial atoms”. Cornelissens YG, Partoens B, Peeters FM, Physica. E: Low-dimensional systems and nanostructures 8, 314 (2000). http://doi.org/10.1016/S1386-9477(00)00163-6
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Comparative study of structural properties and photoluminescence in InGaN layers with a high In content”. Vantomme A, Wu MF, Hogg S, van Landuyt J, et al, Internet journal of nitride semiconductor research T2 –, Symposium on GaN and Related Alloys Held at the MRS Fall Meeting, NOV 29-DEC 03, 1999, BOSTON, MASSACHUSETTS 5, art. no.-W11.38 (2000)
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SIMS/TOF-SIMS study of microparticles: surface analysis, imaging and quantification”. Gijbels R, Verlinden G, Geuens I London Institute of Physics, Bristol, page 331 (2000).
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Electron energy distribution function in capacitively coupled RF discharges: differences between electropositive Ar and electronegative SiH4 discharges”. Yan M, Bogaerts A, Goedheer WJ, Gijbels R, Plasma sources science and technology 9, 583 (2000). http://doi.org/10.1088/0963-0252/9/4/314
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A new electrostatic transfer line for improved transmission in Fourier transform laser microprobe mass spectrometry with external ion source”. van Vaeck L, van Espen P, Gijbels R, Baykut G, Laukien FH, European mass spectrometry 6, 277 (2000). http://doi.org/10.1255/ejms.342
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Chemical surface characterization of complex AgX microcrystals by imaging TOF-SIMS and dual beam depth profiling”. Verlinden G, Gijbels R, Geuens I, de Keyzer R, , 213 (2000)
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Study of oxynitrides with dual beam TOF-SIMS”. de Witte H, Conard T, Vandervorst W, Gijbels R, , 611 (2000)
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TOF-SIMS analysis of carbocyanine dyes adsorbed on silver substrates”. Lenaerts J, Verlinden G, van Vaeck L, Gijbels R, Geuens I, , 115 (2000)
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XPS study of ion induced oxidation of silicon with and without oxygen flooding”. de Witte H, Conard T, Sporken R, Gouttebaron R, Magnee R, Vandervorst W, Caudano R, Gijbels R, , 73 (2000)
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Identification of new superconducting compounds by electron microscopy”. Van Tendeloo G, Krekels T Cambridge University Press, Cambridge, page 161 (2000).
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Asymmetric stark shifts in InGaAs/GaAs near-surface quantum wells: the image charge effect”. Chang K, Peeters FM, Journal of applied physics 88, 5246 (2000). http://doi.org/10.1063/1.1314905
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Calculation of gas heating in direct current argon glow discharges”. Bogaerts A, Gijbels R, Serikov VV, Journal of applied physics 87, 8334 (2000). http://doi.org/10.1063/1.373545
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Diffusive transport in the hybrid Hall effect device”. Reijniers J, Peeters FM, Journal of applied physics 87, 8088 (2000). http://doi.org/10.1063/1.373502
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Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer”. Nistor L, Bender H, Vantomme A, Wu MF, van Landuyt J, O'Donnell KP, Martin R, Jacobs K, Moerman I, Applied physics letters 77, 507 (2000). http://doi.org/10.1063/1.127026
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