“A model determining optimal doping concentration and material's band gap of tunnel field-effect transistors”. Vandenberghe WG, Verhulst AS, Kao K-H, De Meyer K, Sorée B, Magnus W, Groeseneken G, Applied physics letters 100, 193509 (2012). http://doi.org/10.1063/1.4714544
Abstract: We develop a model for the tunnel field-effect transistor (TFET) based on the Wentzel-Kramer-Brillouin approximation which improves over existing semi-classical models employing generation rates. We hereby introduce the concept of a characteristic tunneling length in direct semiconductors. Based on the model, we show that a limited density of states results in an optimal doping concentration as well as an optimal material's band gap to obtain the highest TFET on-current at a given supply voltage. The observed optimal-doping trend is confirmed by 2-dimensional quantum-mechanical simulations for silicon and germanium. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4714544]
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 25
DOI: 10.1063/1.4714544
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“Modeling of a capacitively coupled radio-frequency methane plasma: comparison between a one-dimensional and a two-dimensional fluid model”. Herrebout D, Bogaerts A, Yan M, Gijbels R, Goedheer W, Vanhulsel A, Journal of applied physics 92, 2290 (2002). http://doi.org/10.1063/1.1500789
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.068
Times cited: 15
DOI: 10.1063/1.1500789
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“Modeling of bombardment induced oxidation of silicon”. de Witte H, Vandervorst W, Gijbels R, Journal of applied physics 89, 3001 (2001). http://doi.org/10.1063/1.1344581
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.068
Times cited: 16
DOI: 10.1063/1.1344581
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“Modeling of chemical processes in the low pressure capacitive radio frequency discharges in a mixture of Ar/C2H2”. Ariskin DA, Schweigert IV, Alexandrov AL, Bogaerts A, Peeters FM, Journal of applied physics 105, 063305 (2009). http://doi.org/10.1063/1.3095760
Abstract: We study the properties of a capacitive 13.56 MHz discharge with a mixture of Ar/C<sub>2</sub>H<sub>2</sub> taking into account the plasmochemistry and growth of heavy hydrocarbons. A hybrid model was developed to combine the kinetic description for electron motion and the fluid approach for negative and positive ion transports and plasmochemical processes. A significant change in plasma parameters related to injection of 5.8% portion of acetylene in argon was observed and analyzed. We found that the electronegativity of the mixture is about 30%. The densities of negatively and positively charged heavy hydrocarbons are sufficiently large to be precursors for the formation of nanoparticles in the discharge volume.
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.068
Times cited: 21
DOI: 10.1063/1.3095760
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“Modeling of ionization of argon in an analytical capacitively coupled radio-frequency glow discharge”. Bogaerts A, Yan M, Gijbels R, Goedheer W, Journal of applied physics 86, 2990 (1999). http://doi.org/10.1063/1.371159
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.068
Times cited: 18
DOI: 10.1063/1.371159
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“Modeling single-particle energy levels and resonance currents in a coherent electronic quantum dot mixer”. Payette C, Partoens B, Yu G, Gupta JA, Austing DG, Nair SV, Amaha S, Tarucha S, Applied physics letters 94, 222101 (2009). http://doi.org/10.1063/1.3147196
Abstract: We present model calculations based on a coherent tunneling picture, which reproduce well both the single-particle energy level position and the resonant current strength at two typical anticrossings, one involving two levels and the other three levels in a coherent mixer composed of two weakly coupled vertical quantum dots. An essential ingredient is the inclusion of higher degree terms to account for deviations from an ideal elliptical parabolic confining potential in realistic dots. We also calculate density plots of the mixed states for the modified potential.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 5
DOI: 10.1063/1.3147196
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“Modeling the capacitance-voltage response of In0.53Ga0.47As metal-oxide-semiconductor structures : charge quantization and nonparabolic corrections”. O'Regan TP, Hurley PK, Sorée B, Fischetti MV, Applied Physics Letters 96, 213514 (2010). http://doi.org/10.1063/1.3436645
Abstract: The capacitance-voltage (C-V) characteristic is calculated for p-type In<sub>0.53</sub>Ga<sub>0.47</sub>As metal-oxide-semiconductor (MOS) structures based on a self-consistent PoissonSchrödinger solution. For strong inversion, charge quantization leads to occupation of the satellite valleys which appears as a sharp increase in the capacitance toward the oxide capacitance. The results indicate that the charge quantization, even in the absence of interface defects (D<sub>it</sub>), is a contributing factor to the experimental observation of an almost symmetric C-V response for In<sub>0.53</sub>Ga<sub>0.47</sub>As MOS structures. In addition, nonparabolic corrections are shown to enhance the depopulation of the Γ valley, shifting the capacitance increase to lower inversion charge densities.
Keywords: A1 Journal article; Electron Microscopy for Materials Science (EMAT);
Impact Factor: 3.411
Times cited: 26
DOI: 10.1063/1.3436645
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“Modeling the single-gate, double-gate, and gate-all-around tunnel field-effect transistor”. Verhulst A, Sorée B, Leonelli D, Vandenberghe WG, Groeseneken G, Journal Of Applied Physics 107, 024518 (2010). http://doi.org/10.1063/1.3277044
Abstract: Tunnel field-effect transistors (TFETs) are potential successors of metal-oxide-semiconductor FETs because scaling the supply voltage below 1 V is possible due to the absence of a subthreshold-swing limit of 60 mV/decade. The modeling of the TFET performance, however, is still preliminary. We have developed models allowing a direct comparison between the single-gate, double-gate, and gate-all-around configuration at high drain voltage, when the drain-voltage dependence is negligible, and we provide improved insight in the TFET physics. The dependence of the tunnel current on device parameters is analyzed, in particular, the scaling with gate-dielectric thickness, channel thickness, and dielectric constants of gate dielectric and channel material. We show that scaling the gate-dielectric thickness improves the TFET performance more than scaling the channel thickness and that improvements are often overestimated. There is qualitative agreement between our model and our experimental data.
Keywords: A1 Journal article; Electron Microscopy for Materials Science (EMAT);
Impact Factor: 2.068
Times cited: 150
DOI: 10.1063/1.3277044
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“Modeling ultrashort laser-induced emission from a negatively biased metal”. Wendelen W, Mueller BY, Autrique D, Bogaerts A, Rethfeld B, Applied physics letters 103, 221603 (2013). http://doi.org/10.1063/1.4830378
Abstract: A theoretical study of ultrashort laser-induced electron emission from a negatively biased metallic cathode has been performed. Classical as well as tunneling electron emission mechanisms are considered. It was found that electron emission is governed by an interplay of processes inside as well as above the cathode. A hybrid model is proposed, where the electron distribution within the target is retrieved from Boltzmann scattering integrals, while the charge distribution above it is studied by a Particle-In-Cell simulation. The results indicate that non-equilibrium effects determine the initial emission process, whereas the space charge above the target suppresses the effectively emitted charge.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 3.411
Times cited: 8
DOI: 10.1063/1.4830378
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“Modified atomic scattering amplitudes and size effects on the 002 and 220 electron structure factors of multiple Ga1-xInxAs/GaAs quantum wells”. Titantah JT, Lamoen D, Schowalter M, Rosenauer A, Journal of applied physics 105, 084310 (2009). http://doi.org/10.1063/1.3115407
Abstract: The modified atomic scattering amplitudes (MASAs) of mixed Ga<sub>1-x</sub>In<sub>x</sub>As, GaAs<sub>1-x</sub>N<sub>x</sub>, and InAs<sub>1-x</sub>N<sub>x</sub> are calculated using the density functional theory approach and the results are compared with those of the binary counterparts. The MASAs of N, Ga, As, and In for various scattering vectors in various chemical environments and in the zinc-blende structure are compared with the frequently used Doyle and Turner values. Deviation from the Doyle and Turner results is found for small scattering vectors (s<0.3 Å<sup>-1</sup>) and for these scattering vectors the MASAs are found to be sensitive to the orientation of the scattering vector and on the chemical environment. The chemical environment sensitive MASAs are used within zero pressure classical Metropolis Monte Carlo, finite temperature calculations to investigate the effect of well size on the electron 002 and 220 structure factors (SFs). The implications of the use of the 002 (200) spot for the quantification of nanostructured Ga<sub>1-x</sub>In<sub>x</sub>As systems are examined while the 220 SF across the well is evaluated and is found to be very sensitive to the in-plane static displacements.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.068
DOI: 10.1063/1.3115407
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“Molecular dynamics simulations of Cl+ etching on a Si(100) surface”. Gou F, Neyts E, Eckert M, Tinck S, Bogaerts A, Journal of applied physics 107, 113305 (2010). http://doi.org/10.1063/1.3361038
Abstract: Molecular dynamics simulations using improved TersoffBrenner potential parameters were performed to investigate Cl+ etching of a {2×1} reconstructed Si(100) surface. Steady-state Si etching accompanying the Cl coverage of the surface is observed. Furthermore, a steady-state chlorinated reaction layer is formed. The thickness of this reaction layer is found to increase with increasing energy. The stoichiometry of SiClx species in the reaction layer is found to be SiCl:SiCl2:SiCl3 = 1.0:0.14:0.008 at 50 eV. These results are in excellent agreement with available experimental data. While elemental Si products are created by physical sputtering, most SiClx (0<x<4) etch products are produced by chemical-enhanced physical sputtering.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.068
Times cited: 15
DOI: 10.1063/1.3361038
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“Monolayers of MoS2 as an oxidation protective nanocoating material”. Sen HS, Sahin H, Peeters FM, Durgun E, Journal of applied physics 116, 083508 (2014). http://doi.org/10.1063/1.4893790
Abstract: First-principle calculations are employed to investigate the interaction of oxygen with ideal and defective MoS2 monolayers. Our calculations show that while oxygen atoms are strongly bound on top of sulfur atoms, the oxygen molecule only weakly interacts with the surface. The penetration of oxygen atoms and molecules through a defect-free MoS2 monolayer is prevented by a very high diffusion barrier indicating that MoS2 can serve as a protective layer for oxidation. The analysis is extended to WS2 and similar coating characteristics are obtained. Our calculations indicate that ideal and continuous MoS2 and WS2 monolayers can improve the oxidation and corrosion-resistance of the covered surface and can be considered as an efficient nanocoating material. (C) 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.068
Times cited: 52
DOI: 10.1063/1.4893790
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“Nanoscale analysis of interfaces in a metal/oxide/oxide trilayer obtained by pulsed laser deposition”. Fix T, Ulhaq-Bouillet C, Colis S, Dinia A, Bertoni G, Verbeeck J, Van Tendeloo G, Applied physics letters 91, 023106 (2007). http://doi.org/10.1063/1.2755699
Abstract: Sr2FeMoO6/SrTiO3/CoFe2 trilayers grown by pulsed laser deposition on SrTiO3 (001) are investigated by transmission electron microscopy and electron energy loss spectroscopy. The stack is epitaxial, independent of whether the CoFe2 electrode is grown at 500 or at 50 degrees C. Thus it is possible to obtain epitaxy near room temperature. The SrTiO3/CoFe2 interface is quite sharp, while the Sr2FeMoO6/SrTiO3 interface presents regions of Fe depletion. The chemical composition of the films is close to the nominal stoichiometries. These results could be useful for the growth of heteroepitaxial devices and magnetic tunnel junctions. (C) 2007 American Institute of Physics.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 16
DOI: 10.1063/1.2755699
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“Negative magnetoresistance in a V3+/V4+ mixed valent vanadate”. Maignan A, Lebedev OI, Van Tendeloo G, Martin C, Hébert S, Applied physics letters 96, 232502 (2010). http://doi.org/10.1063/1.3446892
Abstract: The magnetotransport and magnetic properties of the PbV6O11 vanadate, crystallizing in the P63mc space group, reveal the existence of a negative magnetoresistance related to its ferromagnetic state (TC ∼ 90 K). The maximum effect is observed at 20 K reaching −30% in 9 T. The structural study of this ceramic reveals a V/Pb ratio smaller than expected from the formula. This is explained by the presence of numerous stacking faults observed by high resolution transmission electron microscopy. The existence of these planar defects acting as resistive barriers along the c axis could be responsible for tunneling magnetoresistance.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
DOI: 10.1063/1.3446892
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“Nonlinear transport phenomena in a triangular quantum well”. Kastalsky A, Peeters FM, Chan WK, Florez LT, Harbison JP, Applied physics letters 59, 1708 (1991)
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.302
Times cited: 11
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“Numerical simulation of dual frequency etching reactors: influence of the external process parameters on the plasma characteristics”. Georgieva V, Bogaerts A, Journal of applied physics 98, 023308 (2005). http://doi.org/10.1063/1.1989439
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.068
Times cited: 75
DOI: 10.1063/1.1989439
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“Numerical study of Ar/CF4/N2 discharges in single and dual frequency capacitively coupled plasma reactors”. Georgieva V, Bogaerts A, Gijbels R, Journal of applied physics 94, 3748 (2003). http://doi.org/10.1063/1.1603348
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.068
Times cited: 90
DOI: 10.1063/1.1603348
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“Observation of Co/CoO nanoparticles below the critical size for exchange bias”. Dobrynin AN, Temst K, Lievens P, Margueritat J, Gonzalo J, Afonso CN, Piscopiello E, Van Tendeloo G, Journal of applied physics 101, 113913 (2007). http://doi.org/10.1063/1.2736303
Abstract: We compare the magnetic properties of pure and oxidized Co nanoparticles embedded in an amorphous Al2O3 matrix. Nanoparticles with diameters of 2 or 3 nm were prepared by alternate pulsed laser deposition in high vacuum conditions, and some of them were exposed to O-2 after production and before being embedded. The nanoparticles are organized in layers, the effective edge-to-edge in-depth separation being 5 or 10 nm. The lower saturation magnetizations per Co atom for the samples containing oxidized nanoparticles provide evidence for the formation of antiferromagnetic CoO shells in the nanoparticles. None of the samples with Co/CoO nanoparticles show exchange bias, while vertical hysteresis loop shifts and enhanced coercivities (as compared to samples with pure Co nanoparticles) are observed. This constitutes evidence for the nanoparticles size being in all cases smaller than the critical size for exchange bias. The difference in coercivity versus temperature dependences for the samples with pure and oxidized Co nanoparticles shows that the exchange anisotropy in Co/CoO nanoparticles appears at temperatures lower than 50 K. (c) 2007 American Institute of Physics.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.068
Times cited: 27
DOI: 10.1063/1.2736303
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“Optical conductance and transmission in bilayer graphene”. Dhong HM, Zhang J, Peeters FM, Xu W, Journal of applied physics 106, 043103 (2009). http://doi.org/10.1063/1.3200959
Abstract: We present a theoretical study of the optoelectronic properties of bilayer graphene. The optical conductance and transmission coefficient are calculated using the energy-balance equation derived from a Boltzmann equation for an air/graphene/dielectric-wafer system. For short wavelengths (<0.2 µm), we obtain the universal optical conductance =e2/(2). Interestingly, there exists an optical absorption window in the wavelength range 10100 µm, which is induced by different transition energies required for inter- and intra-band optical absorptions in the presence of the MossBurstein effect. As a result, the position and width of this absorption window depend sensitively on temperature, carrier density, and sample mobility of the system. These results are relevant for applications of recently developed graphene devices in advanced optoelectronics such as the infrared photodetectors.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.068
Times cited: 11
DOI: 10.1063/1.3200959
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“Optical conductivity of topological insulator thin films”. Li LL, Xu W, Peeters FM, Journal of applied physics 117, 175305 (2015). http://doi.org/10.1063/1.4919429
Abstract: We present a detailed theoretical study on the optoelectronic properties of topological insulator thin film (TITFs). The k . p approach is employed to calculate the energy spectra and wave functions for both the bulk and surface states in the TITF. With these obtained results, the optical conductivities induced by different electronic transitions among the bulk and surface states are evaluated using the energy-balance equation derived from the Boltzmann equation. We find that for Bi2Se3-based TITFs, three characteristic regimes for the optical absorption can be observed. (i) In the low radiation frequency regime (photon energy (h) over bar omega < 200 meV), the free-carrier absorption takes place due to intraband electronic transitions. An optical absorption window can be observed. (ii) In the intermediate radiation frequency regime (200 < (h) over bar omega < 300 meV), the optical absorption is induced mainly by interband electronic transitions from surface states in the valance band to surface states in the conduction band and an universal value sigma(0) = e(2) / (8<(h)over bar>) for the optical conductivity can be obtained. (iii) In the high radiation frequency regime ((h) over bar omega > 300 meV), the optical absorption can be achieved via interband electronic transitions from bulk and surface states in the valance band to bulk and surface states in the conduction band. A strong absorption peak can be observed. These interesting findings indicate that optical measurements can be applied to identify the energy regimes of bulk and surface states in the TITF. (C) 2015 AIP Publishing LLC.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.068
Times cited: 9
DOI: 10.1063/1.4919429
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“Optical properties of (In,Ga)As capped InAs quantum dots grown on [11k] substrates”. Mlinar V, Peeters FM, Applied physics letters 91, 021910 (2007). http://doi.org/10.1063/1.2753745
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 9
DOI: 10.1063/1.2753745
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“Optimal experimental design for the detection of light atoms from high-resolution scanning transmission electron microscopy images”. Gonnissen J, de Backer A, den Dekker AJ, Martinez GT, Rosenauer A, Sijbers J, Van Aert S, Applied physics letters 105, 063116 (2014). http://doi.org/10.1063/1.4892884
Abstract: We report an innovative method to explore the optimal experimental settings to detect light atoms from scanning transmission electron microscopy (STEM) images. Since light elements play a key role in many technologically important materials, such as lithium-battery devices or hydrogen storage applications, much effort has been made to optimize the STEM technique in order to detect light elements. Therefore, classical performance criteria, such as contrast or signal-to-noise ratio, are often discussed hereby aiming at improvements of the direct visual interpretability. However, when images are interpreted quantitatively, one needs an alternative criterion, which we derive based on statistical detection theory. Using realistic simulations of technologically important materials, we demonstrate the benefits of the proposed method and compare the results with existing approaches.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 3.411
Times cited: 12
DOI: 10.1063/1.4892884
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“Oxide phase determination in silicon using infrared spectroscopy and transmission electron microscopy techniques”. Gryse OD, Clauws P, van Landuyt J, Lebedev O, Claeys C, Simoen E, Vanhellemont J, Journal of applied physics 91, 2493 (2002). http://doi.org/10.1063/1.1429800
Abstract: Infrared absorption spectra of polyhedral and platelet oxygen precipitates in silicon are analyzed using a modified Day-Thorpe approach [J. Phys.: Condens. Matter 11, 2551 (1999)]. The aspect ratio of the precipitates is determined by transmission electron microscopy analysis. The reduced spectral function and the stoichiometry of the precipitate are extracted from the absorption spectra and the amount of precipitated interstitial oxygen. The experimental absorption spectra can be divided in a set with a Frohlich frequency of around 1100 cm(-1) and in a set with a Frohlich frequency between 1110 and 1120 cm(-1). It is shown that the shift in the Frohlich frequency is not due to a differing stoichiometry, but to the detailed structure of the reduced spectral function. Inverse modeling of the spectra suggests that the oxide precipitates consist of substoichiometric SiOgamma with gamma=1.17+/-0.14. (C) 2002 American Institute of Physics.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.068
Times cited: 27
DOI: 10.1063/1.1429800
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“Paramagnetic adsorbates on graphene: a charge transfer analysis”. Leenaerts O, Partoens B, Peeters FM, Applied physics letters 92, 243125 (2008). http://doi.org/10.1063/1.2949753
Abstract: We introduce a modified version of the Hirshfeld charge analysis method and demonstrate its accurateness by calculating the charge transfer between the paramagnetic molecule NO2 and graphene. The charge transfer between paramagnetic molecules and a graphene layer as calculated with ab initio methods can crucially depend on the size of the supercell used in the calculation. This has important consequences for adsorption studies involving paramagnetic molecules such as NO2 physisorbed on graphene or on carbon nanotubes. © 2008 American Institute of Physics.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 79
DOI: 10.1063/1.2949753
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“Partially unzipped carbon nanotubes as magnetic field sensors”. Costamagna S, Schulz A, Covaci L, Peeters F, Applied physics letters 100, 232104 (2012). http://doi.org/10.1063/1.4726039
Abstract: The conductance through graphene nanoribbons (GNR) connected to a partially unzipped carbon nanotube (CNT) is studied in the presence of an external magnetic field applied parallel to the long axis of the tube by means of non-equilibrium Green's function technique. We consider CNTs that are partially unzipped to form armchair-GNR/zigzag-CNT/armchair-GNR or zigzag-GNR/armchair-CNT/zigzag-GNR junctions. We find that the inclusion of a longitudinal magnetic field affects the electronic states only in the CNT region, leading to the suppression of the conductance at low energies. We demonstrate that both types of junctions can be used as magnetic field sensors. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4726039]
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 10
DOI: 10.1063/1.4726039
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“Particle-in-cell Monte Carlo modeling of Langmuir probes in an Ar plasma”. Cenian A, Chernukho A, Bogaerts A, Gijbels R, Leys C, Journal of applied physics 97, 123310 (2005). http://doi.org/10.1063/1.1938275
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.068
Times cited: 18
DOI: 10.1063/1.1938275
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“Particle-in-cell/Monte Carlo simulation of a capacitively coupled radio frequency Ar/Cf4 discharge: effect of gas composition”. Georgieva V, Bogaerts A, Gijbels R, Journal of applied physics 93, 2369 (2003). http://doi.org/10.1063/1.1542920
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.068
Times cited: 57
DOI: 10.1063/1.1542920
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“Particle-in-cell/Monte Carlo simulations of a low-pressure capacitively coupled radio-frequency discharge: effect of adding H2 to an Ar discharge”. Neyts E, Yan M, Bogaerts A, Gijbels R, Journal of applied physics 93, 5025 (2003). http://doi.org/10.1063/1.1563820
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.068
Times cited: 15
DOI: 10.1063/1.1563820
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“Phase explosion in atmospheric pressure infrared laser ablation from water-rich targets”. Chen Z, Bogaerts A, Vertes A, Applied physics letters 89, 041503 (2006). http://doi.org/10.1063/1.2243961
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 3.411
Times cited: 32
DOI: 10.1063/1.2243961
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“Phase modulation in pulsed dual-frequency capacitively coupled plasmas”. Wen D-Q, Zhang Q-Z, Jiang W, Song U-H, Bogaerts A, Wang Y-N, Journal of applied physics 115, 233303 (2014). http://doi.org/10.1063/1.4884225
Abstract: Particle-in-cell/Monte Carlo collision simulations, coupled with an external circuit, are used to investigate the behavior of pulsed dual-frequency (DF) capacitively coupled plasmas (CCPs). It is found that the phase shift θ between the high (or low) frequency source and the pulse modulation has a great influence on the ion density and the ionization rate. By pulsing the high frequency source, the time-averaged ion density shows a maximum when θ = 90∘. The time-averaged ion energy distribution functions (IEDFs) at the driven electrode, however, keep almost unchanged, illustrating the potential of pulsed DF-CCP for independent control of ion density (and flux) and ion energy. A detailed investigation of the temporal evolution of the plasma characteristics indicates that several high frequency harmonics can be excited at the initial stage of a pulse period by tuning the phase shift θ, and this gives rise to strong sheath oscillations, and therefore high ionization rates. For comparison, the pulsing of the low frequency source is also studied. In this case, the ion density changes slightly as a function of time, and the time-averaged ion density shows the same trend as in the HF modulation for different phase shifts θ. Moreover, the time-averaged IEDFs at the driven electrode can be modulated, showing the potential to reduce the maximum ion bombardment energy.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.068
Times cited: 8
DOI: 10.1063/1.4884225
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