| |
Records |
|
Author |
Cao, S.; Nishida, M.; Somsen, C.; Eggeler, G.; Schryvers, D. |
| |
Title |
3D FIB/SEM study of Ni4Ti3 precipitates in Ni-Ti alloys with different thermal-mechanical histories |
Type |
P1 Proceeding |
| |
Year |
2009 |
Publication |
|
Abbreviated Journal |
|
| |
Volume |
|
Issue |
|
Pages |
02004,1-02004,6 |
| |
Keywords |
P1 Proceeding; Electron microscopy for materials research (EMAT) |
| |
Abstract |
The three-dimensional size, morphology and distribution of Ni4Ti3 precipitates growing in binary Ni-rich Ni-Ti alloys have been investigated via a slice view procedure in a Dual-Beam FIB/SEM system, in order to better stress-free Ni50.8Ti49.2 alloy with all four variants of precipitates and a compressed Ni51Ti49 alloy with aligned precipitates in one family were studied. The Ni4Ti3 precipitates reach a volume fraction of 9.6% in the reconstructed region of the stress-free alloy and 4.3% in the compressed one. In both cases, the mean volume, specific surface area, sphericity and aspect ratio of the precipitates are calculated and the Pair Distribution Functions of the precipitates are obtained. It is shown that most precipitates in the stress-free sample grow larger and have a more lenticular shape, while those in the compressed sample are more cylindrical. Deviations from these ideal shapes reveal internal steps in the stress-free sample and lamellae formation in the compressed one. |
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher  |
Edp |
Place of Publication |
Coutaboeuf |
Editor |
|
| |
Language |
|
Wos |
000274582300008 |
Publication Date |
2009-08-31 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
|
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| |
Impact Factor |
|
Times cited |
1 |
Open Access |
|
| |
Notes |
|
Approved |
Most recent IF: NA |
| |
Call Number |
UA @ lucian @ c:irua:81950 c:irua:81950 |
Serial |
14 |
| Permanent link to this record |
| |
|
| |
|
Author |
Idrissi, H.; Schryvers, D.; Salje, E.K.H.; Zhang, H.; Carpenter, M.A.; Moya, X. |
| |
Title |
Pinning of the martensitic microstructures by dislocations in Cu74.08Al23.13Be2.79 |
Type |
P1 Proceeding |
| |
Year |
2009 |
Publication |
|
Abbreviated Journal |
|
| |
Volume |
|
Issue |
|
Pages |
02029,1-02029,5 |
| |
Keywords |
P1 Proceeding; Electron microscopy for materials research (EMAT) |
| |
Abstract |
A single crystal of Cu74.08Al23.13Be2.79 undergoes a martensitic phase transition at 246K and 232K under heating and cooling, respectively. Surprisingly, the martensite phase is elastically much harder than the austenite phase showing that interfaces between various crystallographic variants are strongly pinned and can not be moved by external stress while the phase boundary between the austenite and martensite regions in the sample remains mobile. This unusual behavior was revealed by Dynamical Mechanical Analysis and Resonant Ultrasound Spectroscopy. Transmission Electron Microscopy shows that the pinning is generated by dislocations, which are inherited from the austenite phase. Such dislocations can hinder the movement of stacking faults in the 18R martensite structure or twin boundaries between martensite variants. |
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
Edp |
Place of Publication |
Coutaboeuf |
Editor |
|
| |
Language |
|
Wos |
000274582300033 |
Publication Date |
2009-08-31 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
|
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| |
Impact Factor |
|
Times cited |
2 |
Open Access |
|
| |
Notes |
|
Approved |
Most recent IF: NA |
| |
Call Number |
UA @ lucian @ c:irua:81952 |
Serial |
2626 |
| Permanent link to this record |
| |
|
| |
|
Author |
Houssa, M.; van den Broek, B.; Scalise, E.; Pourtois, G.; Afanas'ev, V.V.; Stesmans, A. |
| |
Title |
Theoretical study of silicene and germanene |
Type |
P1 Proceeding |
| |
Year |
2013 |
Publication |
Graphene, Ge/iii-v, And Emerging Materials For Post Cmos Applications 5 |
Abbreviated Journal |
|
| |
Volume |
|
Issue |
|
Pages |
|
| |
Keywords |
P1 Proceeding; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
| |
Abstract |
The structural and electronic properties of silicene and germanene on metallic and non-metallic substrates are investigated theoretically, using first-principles simulations. We first study the interaction of silicene with Ag(111) surfaces, focusing on the (4x4) silicene/Ag structure. Due to symmetry breaking in the silicene layer (nonequivalent number of top and bottom Si atoms), silicene is predicted to be semiconducting, with a computed energy gap of about 0.3 eV. However, the charge transfer occurring at the silicene/Ag(111) interface leads to an overall metallic system. We next investigate the interaction of silicene and germanene with hexagonal non-metallic substrates, namely ZnS and ZnSe. On reconstructed (semiconducting) (0001) ZnS or ZnSe surfaces, silicene and germanene are found to be semiconducting. Remarkably, the nature (indirect or direct) and magnitude of their energy band gap can be controlled by an out-of-plane electric field. |
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
Electrochemical soc inc |
Place of Publication |
Pennington |
Editor |
|
| |
Language |
|
Wos |
000354468000006 |
Publication Date |
2013-05-02 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
978-1-60768-374-2; 978-1-62332-023-2 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| |
Impact Factor |
|
Times cited |
6 |
Open Access |
|
| |
Notes |
|
Approved |
Most recent IF: NA |
| |
Call Number |
UA @ lucian @ c:irua:134451 |
Serial |
4529 |
| Permanent link to this record |
| |
|
| |
|
Author |
Pourtois, G.; Dabral, A.; Sankaran, K.; Magnus, W.; Yu, H.; de de Meux, A.J.; Lu, A.K.A.; Clima, S.; Stokbro, K.; Schaekers, M.; Houssa, M.; Collaert, N.; Horiguchi, N. |
| |
Title |
Probing the intrinsic limitations of the contact resistance of metal/semiconductor interfaces through atomistic simulations |
Type |
P1 Proceeding |
| |
Year |
2017 |
Publication |
Semiconductors, Dielectrics, And Metals For Nanoelectronics 15: In Memory Of Samares Kar |
Abbreviated Journal |
|
| |
Volume |
|
Issue |
|
Pages |
303-311 |
| |
Keywords |
P1 Proceeding; Engineering sciences. Technology; Condensed Matter Theory (CMT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
| |
Abstract |
In this contribution, we report a fundamental study of the factors that set the contact resistivity between metals and highly doped semiconductors. We investigate the case of n-type doped Si contacted with amorphous TiSi combining first-principles calculations with Non-Equilibrium Green functions transport simulations. The intrinsic contact resistivity is found to saturate at similar to 2x10(-10) Omega.cm(2) with the doping concentration and sets an intrinsic limit to the ultimate contact resistance achievable for n-doped Si vertical bar amorphous-TiSi. This limit arises from the intrinsic properties of the semiconductor and of the metal such as their electron effective masses and Fermi energies. We illustrate that, in this regime, contacting metals with a heavy electron effective mass helps reducing the interface intrinsic contact resistivity. |
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
Electrochemical soc inc |
Place of Publication |
Pennington |
Editor |
|
| |
Language |
|
Wos |
000426271800028 |
Publication Date |
2017-10-17 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
80 |
Series Issue |
1 |
Edition |
|
| |
ISSN |
978-1-62332-470-4; 978-1-60768-818-1 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| |
Impact Factor |
|
Times cited |
1 |
Open Access |
Not_Open_Access |
| |
Notes |
; ; |
Approved |
Most recent IF: NA |
| |
Call Number |
UA @ lucian @ c:irua:149966 |
Serial |
4976 |
| Permanent link to this record |
| |
|
| |
|
Author |
Goux, L.; Fantini, A.; Govoreanu, B.; Kar, G.; Clima, S.; Chen, Y.-Y.; Degraeve, R.; Wouters, D.J.; Pourtois, G.; Jurczak, M. |
| |
Title |
Asymmetry and switching phenomenology in TiN\ (Al2O3) \ HfO2 \ Hf systems |
Type |
A1 Journal article |
| |
Year |
2012 |
Publication |
ECS solid state letters |
Abbreviated Journal |
Ecs Solid State Lett |
| |
Volume |
1 |
Issue |
4 |
Pages |
63-65 |
| |
Keywords |
A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
| |
Abstract |
In this letter, we address the bipolar resistive switching phenomenology in scaled TiN\HfO2\Hf cells. By means of stack engineering using a thin Al2O3 layer inserted either at the TiN\HfO2 or at the Hf\HfO2 interface, we demonstrate that the reset operation takes place close to the TiNanode. Due to the increase of the oxygen-vacancy profile from the TiN to the Hf interface, the filament-confining and wide band-gap Al2O3 layer should indeed be engineered at the interface with the TiN electrode in order to further improve the switching control and to allow reaching larger state resistances. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.003204ssl] All rights reserved. |
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
Electrochemical society |
Place of Publication |
Pennington (N.J.) |
Editor |
|
| |
Language |
|
Wos |
000318340300005 |
Publication Date |
2012-08-23 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
2162-8742;2162-8750; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| |
Impact Factor |
1.184 |
Times cited |
11 |
Open Access |
|
| |
Notes |
|
Approved |
Most recent IF: 1.184; 2012 IF: NA |
| |
Call Number |
UA @ lucian @ c:irua:108530 |
Serial |
160 |
| Permanent link to this record |
| |
|
| |
|
Author |
Delabie, A.; Jayachandran, S.; Caymax, M.; Loo, R.; Maggen, J.; Pourtois, G.; Douhard, B.; Conard, T.; Meersschaut, J.; Lenka, H.; Vandervorst, W.; Heyns, M.; |
| |
Title |
Epitaxial chemical vapor deposition of silicon on an oxygen monolayer on Si(100) substrates |
Type |
A1 Journal article |
| |
Year |
2013 |
Publication |
ECS solid state letters |
Abbreviated Journal |
Ecs Solid State Lett |
| |
Volume |
2 |
Issue |
11 |
Pages |
P104-P106 |
| |
Keywords |
A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
| |
Abstract |
Crystalline superlattices consisting of alternating periods of Si layers and O-atomic layers are potential new channel materials for scaled CMOS devices. In this letter, we investigate Chemical Vapor Deposition (CVD) for the controlled deposition of O-atoms with O-3 as precursor on Si(100) substrates and Si epitaxy on the O-layer. The O-3 reaction at 50 degrees C on the H-terminated Si results in the formation of Si-OH and/or Si-O-Si-H surface species with monolayer O-content. Defect-free epitaxial growth of Si on an O-layer containing 6.4E+14 O-atoms/cm(2) is achieved from SiH4 at 500 degrees C. (C) 2013 The Electrochemical Society. All rights reserved. |
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
Electrochemical society |
Place of Publication |
Pennington (N.J.) |
Editor |
|
| |
Language |
|
Wos |
000324582600006 |
Publication Date |
2013-09-06 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
2162-8742;2162-8750; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| |
Impact Factor |
1.184 |
Times cited |
12 |
Open Access |
|
| |
Notes |
|
Approved |
Most recent IF: 1.184; 2013 IF: 0.781 |
| |
Call Number |
UA @ lucian @ c:irua:111208 |
Serial |
1070 |
| Permanent link to this record |
| |
|
| |
|
Author |
Sankaran, K.; Clima, S.; Mees, M.; Pourtois, G. |
| |
Title |
Exploring alternative metals to Cu and W for interconnects applications using automated first-principles simulations |
Type |
A1 Journal article |
| |
Year |
2015 |
Publication |
ECS journal of solid state science and technology |
Abbreviated Journal |
Ecs J Solid State Sc |
| |
Volume |
4 |
Issue |
4 |
Pages |
N3127-N3133 |
| |
Keywords |
A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
| |
Abstract |
The bulk properties of elementary metals and copper based binary alloys have been investigated using automated first-principles simulations to evaluate their potential to replace copper and tungsten as interconnecting wires in the coming CMOS technology nodes. The intrinsic properties of the screened candidates based on their cohesive energy and on their electronic properties have been used as a metrics to reflect their resistivity and their sensitivity to electromigration. Using these values, the 'performances' of the alloys have been benchmarked with respect to the Cu and W ones. It turns out that for some systems, alloying Cu with another element leads to a reduced tendency to electromigration. This is however done at the expense of a decrease of the conductivity of the alloy with respect to the bulk metal. (C) 2014 The Electrochemical Society. All rights reserved. |
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
Electrochemical society |
Place of Publication |
Pennington (N.J.) |
Editor |
|
| |
Language |
|
Wos |
000349547900018 |
Publication Date |
2014-11-19 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
2162-8769;2162-8777; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| |
Impact Factor |
1.787 |
Times cited |
19 |
Open Access |
|
| |
Notes |
|
Approved |
Most recent IF: 1.787; 2015 IF: 1.558 |
| |
Call Number |
c:irua:125296 |
Serial |
1150 |
| Permanent link to this record |
| |
|
| |
|
Author |
Dabral, A.; Pourtois, G.; Sankaran, K.; Magnus, W.; Yu, H.; de de Meux, A.J.; Lu, A.K.A.; Clima, S.; Stokbro, K.; Schaekers, M.; Collaert, N.; Horiguchi, N.; Houssa, M. |
| |
Title |
Study of the intrinsic limitations of the contact resistance of metal/semiconductor interfaces through atomistic simulations |
Type |
A1 Journal article |
| |
Year |
2018 |
Publication |
ECS journal of solid state science and technology |
Abbreviated Journal |
Ecs J Solid State Sc |
| |
Volume |
7 |
Issue |
6 |
Pages |
N73-N80 |
| |
Keywords |
A1 Journal article; Condensed Matter Theory (CMT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
| |
Abstract |
In this contribution, we report a fundamental study of the factors that set the contact resistivity between metals and highly doped n-type 2D and 3D semiconductors. We investigate the case of n-type doped Si contacted with amorphous TiSi combining first principles calculations with Non-Equilibrium Green functions transport simulations. The evolution of the intrinsic contact resistivity with the doping concentration is found to saturate at similar to 2 x 10(-10) Omega.cm(2) for the case of TiSi and imposes an intrinsic limit to the ultimate contact resistance achievable for n-doped Silamorphous-TiSi (aTiSi). The limit arises from the intrinsic properties of the semiconductors and of the metals such as their electron effective masses and Fermi energies. We illustrate that, in this regime, contacting heavy electron effective mass metals with semiconductor helps reducing the interface intrinsic contact resistivity. This observation seems to hold true regardless of the 3D character of the semiconductor, as illustrated for the case of three 2D semiconducting materials, namely MoS2, ZrS2 and HfS2. (C) The Author(s) 2018. Published by ECS. |
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
Electrochemical society |
Place of Publication |
Pennington (N.J.) |
Editor |
|
| |
Language |
|
Wos |
000440836000004 |
Publication Date |
2018-05-25 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
2162-8769; 2162-8777 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| |
Impact Factor |
1.787 |
Times cited |
2 |
Open Access |
Not_Open_Access |
| |
Notes |
; The authors thank the imec core CMOS program members, the European Commission, its TAKEMI5 ECSEL research project and the local authorities for their support. ; |
Approved |
Most recent IF: 1.787 |
| |
Call Number |
UA @ lucian @ c:irua:153205UA @ admin @ c:irua:153205 |
Serial |
5130 |
| Permanent link to this record |
| |
|
| |
|
Author |
Van Bockstal, L.; Mahy, M.; de Keyser, A.; Hoeks, W.; Herlach, F.; Peeters, F.M.; Van de Graaf, W.; Borghs, G. |
| |
Title |
Cyclotron-resonance of 2d electrons at Si-\delta-doped InSb layers grown on GaAs |
Type |
A1 Journal article |
| |
Year |
1995 |
Publication |
Physica: B : condensed matter |
Abbreviated Journal |
Physica B |
| |
Volume |
211 |
Issue |
1-4 |
Pages |
466-469 |
| |
Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
| |
Abstract |
Cyclotron resonance (CR) of the electrons accumulated at sheets with heavy Si doping in InSb were observed using far infrared radiation. The angular dependence of the CR follows closely the 1/cos theta behaviour with some small deviations at high angles attributed to coupling between subbands. From the effective mass of the lowest subband, which is found to be 0.027m(o), the bottom of the lowest subband was determined to lie 125 meV below the Fermi level. |
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
Elsevier |
Place of Publication |
Amsterdam |
Editor |
|
| |
Language |
|
Wos |
A1995RD54400121 |
Publication Date |
2003-05-01 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
0921-4526; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| |
Impact Factor |
1.319 |
Times cited |
2 |
Open Access |
|
| |
Notes |
|
Approved |
no |
| |
Call Number |
UA @ lucian @ c:irua:95914 |
Serial |
601 |
| Permanent link to this record |
| |
|
| |
|
Author |
Frangis, N.; van Landuyt, J.; Grimaldi, M.G.; Calcagno, L. |
| |
Title |
Electron microscopy and Rutherford backscattering spectrometry characterisation of 6H SiC samples implanted with He+ |
Type |
A1 Journal article |
| |
Year |
1996 |
Publication |
Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms
T2 – Symposium 1 on New Trends in Ion Beam Processing of Materials, at the, E-MRS 96 Spring Meeting, June 04-07, 1996, Strasbourg, France |
Abbreviated Journal |
Nucl Instrum Meth B |
| |
Volume |
120 |
Issue |
1-4 |
Pages |
186-189 |
| |
Keywords |
A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT) |
| |
Abstract |
6H SiC single crystals were implanted al room temperature with 1 MeV He+ up to a fluence of 2 x 10(17) at./cm(2) RBS-channeling analysis with a 2 MeV He+ beam indicated the formation of extended defects or the generation of point defects at a constant concentration over a depth of about 1 mu m. Electron microscopy characterisation revealed the presence of two amorphous buried layers at depths of about 1,75 and 4.8 mu m. They an due to the implantation and to the analysing RES beam, respectively, No extended planar or linear faults were found in the region between the surface and the first amorphous layer. However, at the surface, a 50 nm thick amorphous layer was observed in which crystalline inclusions were embedded. Electron diffraction and HREM data of the inclusions were typical for diamond, These inclusions were even found in the crystalline SiC material below this layer, however at a reduced density. |
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
Elsevier |
Place of Publication |
Amsterdam |
Editor |
|
| |
Language |
|
Wos |
A1996VZ24500040 |
Publication Date |
2002-07-26 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
0168-583X; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| |
Impact Factor |
1.124 |
Times cited |
2 |
Open Access |
|
| |
Notes |
|
Approved |
no |
| |
Call Number |
UA @ lucian @ c:irua:95882 |
Serial |
947 |
| Permanent link to this record |
| |
|
| |
|
Author |
Lok, J.G.S.; Geim, A.K.; Maan, J.C.; Marmorkos, I.; Peeters, F.M.; Mori, N.; Eaves, L.; McDonnell, P.; Henini, M.; Sakai, J.W.; Main, P.C.; |
| |
Title |
Resonant tunnelling through D- states |
Type |
A1 Journal article |
| |
Year |
1996 |
Publication |
Surface science : a journal devoted to the physics and chemistry of interfaces
T2 – 11th International Conference on the Electronic Properties of 2-Dimensional Systems (EP2DS XI), August 07-11, 1995, Univ. Nottingham, Nottingham, England |
Abbreviated Journal |
Surf Sci |
| |
Volume |
362 |
Issue |
1-3 |
Pages |
247-250 |
| |
Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
| |
Abstract |
We have studied tunnelling through Si donors incorporated in the quantum well of double barrier resonant tunnelling devices. In addition to a resonance associated with the ground state of a single donor (1s level), a novel donor-related resonance at a smaller binding energy is observed in high magnetic fields where it becomes dominant over the Is resonance. We attribute this novel feature to a D-minus state of a shallow donor. |
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
Elsevier |
Place of Publication |
Amsterdam |
Editor |
|
| |
Language |
|
Wos |
A1996UZ03300061 |
Publication Date |
2002-07-26 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
0039-6028; |
ISBN |
|
Additional Links |
UA library record; WoS full record |
| |
Impact Factor |
1.925 |
Times cited |
|
Open Access |
|
| |
Notes |
|
Approved |
INSTRUMENTS & INSTRUMENTATION 31/56 Q3 # NUCLEAR SCIENCE & TECHNOLOGY 9/32 Q2 # PHYSICS, PARTICLES & FIELDS 24/28 Q4 # SPECTROSCOPY 28/43 Q3 # |
| |
Call Number |
UA @ lucian @ c:irua:95892 |
Serial |
2895 |
| Permanent link to this record |
| |
|
| |
|
Author |
Blank, D.H.A.; Rijnders, A.J.H.M.; Verhoeven, M.A.J.; Bergs, R.M.H.; Rogalla, H.; Verbist, K.; Lebedev, O.; Van Tendeloo, G. |
| |
Title |
Characterisation of multilayer ramp-type REBa2Cu3O7-\delta structures by scanning probe microscopy and high-resolution electron microscopy |
Type |
A1 Journal article |
| |
Year |
1997 |
Publication |
Journal of alloys and compounds
T2 – Symposium on High Temperature Superconductor Thin Films, Growth, Mechanisms, Interfaces, Multilayers, at the 1996 Spring Meeting of the European-Materials-Society, June 04-07, 1996, Strasbourg, France |
Abbreviated Journal |
J Alloy Compd |
| |
Volume |
251 |
Issue |
1-2 |
Pages |
206-208 |
| |
Keywords |
A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT) |
| |
Abstract |
We studied the morphology of ramps in REBa2CU3O7 (REBCO) epitaxial films on SrTiO3 substrates, fabricated by RF magnetron sputter deposition and pulsed laser deposition (PLD), by scanning probe microscopy (SPM) and high resolution electron microscopy (HREM). The ramps were fabricated by Ar ion beam etching using masks of standard photoresist and TIN. AFM-studies on ramps in sputter deposited films show a strong dependence, i.e. formation of facets and ridges, on the angle of incidence of the ion beam with respect to the substrate surface as well as the rotation angle with respect to the crystal axes of the substrate. Ramps in pulsed laser deposited films did not show this dependence, Furthermore, we studied the effect of an anneal step prior to the deposition of barrier layers (i.e. PrBa2CU3O7, SrTiO3, CeO2) on the ramp. First results show a recrystallization of the ramp surface, resulting in terraces and a non-homogeneous growth of the barrier material on top of it. The thickness variations, for thin layers of barrier material, con even become much larger than expected from the amount of deposited material and are dependent on the deposition and anneal conditions. HREM studies show a well defined interface between barrier layer and electrodes. The angle of the ramp depends on the etch rate of the mask and REBCO, and on the angle of incidence of the ion beam. TiN has a much lower etch rate compared to photoresist, resulting in an angle of the ramp comparable to the angle of incidence, resulting in a low etching rate on the ramp. These results will lead to improved electrical characteristics of ramp-type junctions. |
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
Elsevier Science |
Place of Publication |
Lausanne |
Editor |
|
| |
Language |
|
Wos |
A1997XM34000046 |
Publication Date |
2002-07-25 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
0925-8388; |
ISBN |
|
Additional Links |
UA library record; WoS full record |
| |
Impact Factor |
3.133 |
Times cited |
|
Open Access |
|
| |
Notes |
|
Approved |
Most recent IF: 3.133; 1997 IF: 1.035 |
| |
Call Number |
UA @ lucian @ c:irua:95868 |
Serial |
310 |
| Permanent link to this record |
| |
|
| |
|
Author |
Razdobarin, A.G.; Mukhin, E.E.; Semenov, V.V.; Yu.Tolstyakov, S.; Kochergin, M.M.; Kurskiev, G.S.; Podushnikova, K.A.; Kirilenko, D.A.; Sitnikova, A.A.; Gorodetsky, А.Е.; Bukhovets, V.L.; Zalavutdinov, R.K.; Zakharov, А.P.; Arkhipov, I.I.; Voitsenya, V.S.; Bondarenko, V.N.; Konovalov, V.G.; Ryzhkov, I.V.; |
| |
Title |
High reflective mirrors for in-vessel applications in ITER |
Type |
A1 Journal article |
| |
Year |
2010 |
Publication |
Nuclear instruments and methods in physics research : A: accelerators, spectrometers, detectors and associated equipment |
Abbreviated Journal |
Nucl Instrum Meth A |
| |
Volume |
623 |
Issue |
2 |
Pages |
809-811 |
| |
Keywords |
A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT) |
| |
Abstract |
The structure and surface morphology of aluminum and silver mirrors covered with protective dielectric oxide layer were studied by means of TEM and SEM. The presence of needle-like pores throughout the thickness of the ZrO(2) film and bubble-like pores in Al(2)O(3) was observed. The test for resistivity to deuterium ion bombardment shows that the exposition to a fluence of similar to 2 x 10(20) ions/cm(2) with the ion energy of 40-50 eV results in appearance of blisters on the surface of mirrors covered wit h Al(2)O(3). For the mirrors protected with ZrO(2) no noticeable changes in surface morphology and reflectivity were found even after order of magnitude higher ion fluence. The effect of different porous structures on blistering phenomena is discussed. (C) 2010 Elsevier B.V. All rights reserved. |
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
Elsevier Science |
Place of Publication |
Amsterdam |
Editor |
|
| |
Language |
|
Wos |
000284343600041 |
Publication Date |
2010-04-22 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
0168-9002; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| |
Impact Factor |
1.362 |
Times cited |
4 |
Open Access |
|
| |
Notes |
|
Approved |
Most recent IF: 1.362; 2010 IF: 1.142 |
| |
Call Number |
UA @ lucian @ c:irua:95545 |
Serial |
1442 |
| Permanent link to this record |
| |
|
| |
|
Author |
Antipov, E.V.; Putilin, S.N.; Shpanchenko, R.V.; Alyoshin, V.A.; Rozova, M.G.; Abakumov, A.M.; Mikhailova, D.A.; Balagurov, A.M.; Lebedev, O.; Van Tendeloo, G. |
| |
Title |
Structural features, oxygen and fluorine doping in Cu-based superconductors |
Type |
A1 Journal article |
| |
Year |
1997 |
Publication |
Physica: C : superconductivity
T2 – International Conference on Materials and Mechanisms of, Superconductivity – High Temperature Superconductors V, Feb. 28-Mar. 04, 1997, Beijing, Peoples R. China |
Abbreviated Journal |
Physica C |
| |
Volume |
282 |
Issue |
Part 1 |
Pages |
61-64 |
| |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
| |
Abstract |
The variation of structures and superconducting properties by changing extra oxygen or fluorine atoms concentration in Hg-based Cu mixed oxides and YBa2Cu3O6+delta was studied. The data obtained by NPD study of Hg-1201 can be considered as an evidence of the conventional oxygen doping mechanism with 2 delta holes per (CuO2) layer. The extra oxygen atom was found to be located in the middle of the Hg mesh only. Different formal charges of oxygen and fluorine inserted into reduced 123 structure results in its distinct variations. The fluorine incorporation into strongly reduced YBa2Cu3O6+delta causes a significant structural rearrangement and the formation of a new compound with a composition close to YBa2Cu3O6F2 (tetragonal alpha = 3.87 Angstrom and c approximate to 13 Angstrom), which structure was deduced from the combined results of X-ray diffraction, electron diffraction and high resolution electron microscopy. Fluorination treatment by XeF2 of nonsuperconducting 123 samples causes an appearance of bulk superconductivity with T-c up to 94K. |
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
Elsevier Science |
Place of Publication |
Amsterdam |
Editor |
|
| |
Language |
|
Wos |
A1997XZ90400019 |
Publication Date |
2002-07-25 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
0921-4534; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| |
Impact Factor |
1.404 |
Times cited |
10 |
Open Access |
|
| |
Notes |
|
Approved |
Most recent IF: 1.404; 1997 IF: 2.199 |
| |
Call Number |
UA @ lucian @ c:irua:95866 |
Serial |
3237 |
| Permanent link to this record |
| |
|
| |
|
Author |
Vanhellemont, J.; Maes, H.E.; Schaekers, M.; Armigliato, A.; Cerva, H.; Cullis, A.; de Sande, J.; Dinges, H.; Hallais, J.; Nayar, V.; Pickering, C.; Stehlé, J.L.; Van Landuyt, J.; Walker, C.; Werner, H.; Salieri, P.; |
| |
Title |
Round-robin investigation of silicon-oxide on silicon reference materials for ellipsometry |
Type |
A1 Journal article |
| |
Year |
1993 |
Publication |
Applied surface science
T2 – SYMP ON DIAGNOSTIC TECHNIQUES FOR SEMICONDUCTOR MATERIALS ANALYSIS AND, FABRICATION PROCESS CONTROL, AT THE 1992 SPRING CONF OF THE EUROPEAN, MATERIALS RESEARCH SOC, JUN 02-05, 1992, STRASBOURG, FRANCE |
Abbreviated Journal |
Appl Surf Sci |
| |
Volume |
63 |
Issue |
1-4 |
Pages |
45-51 |
| |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
| |
Abstract |
The main results and conclusions are presented of a round robin study of silicon oxide on silicon reference samples for ellipsometry. The oxide films with nominal thicknesses of 10, 50 and 120 nm are grown by thermal oxidation. The oxide film thicknesses have been determined by single wavelength ellipsometry (SWE), by spectroscopic ellipsometry (SE) and by cross-sectional conventional and high-resolution transmission electron microscopy (TEM and HREM) in different laboratories. The main conclusions are that special precautions have to be taken in order to use TEM as a reliable thickness measurement technique; that single wavelength ellipsometry can be used with great accuracy and reproducibility for the 50 and 120 nm film thicknesses but that it shows some inherent problems for the 10 nm films; and that spectroscopic ellipsometry showed for all film thicknesses an accuracy and reproducibility which is clearly superior to that of SWE. |
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
Elsevier science bv |
Place of Publication |
Amsterdam |
Editor |
|
| |
Language |
|
Wos |
A1993KF03400009 |
Publication Date |
2002-10-16 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
0169-4332; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| |
Impact Factor |
2.711 |
Times cited |
13 |
Open Access |
|
| |
Notes |
|
Approved |
|
| |
Call Number |
UA @ lucian @ c:irua:104539 |
Serial |
2932 |
| Permanent link to this record |
| |
|
| |
|
Author |
Berdiyorov, G.R.; Madjet, M.E.; El-Mellouhi, F.; Peeters, F.M. |
| |
Title |
Effect of crystal structure on the electronic transport properties of the organometallic perovskite CH3NH3PbI3 |
Type |
A1 Journal article |
| |
Year |
2016 |
Publication |
Solar energy materials and solar cells
T2 – 2nd International Renewable and Sustainable Energy Conference (IRSEC), OCT 17-19, 2014, Ouarzazate, MOROCCO |
Abbreviated Journal |
Sol Energ Mat Sol C |
| |
Volume |
148 |
Issue |
148 |
Pages |
60-66 |
| |
Keywords |
A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT) |
| |
Abstract |
Using density-functional theory in combination with the nonequilibrium Green's function formalism, we study the effect of the crystal lattice structure of organometallic perovskite CH3NH3PbI3 on its electronic transport properties. Both dispersive interactions and spin-orbit coupling are taken into account in describing structural and electronic properties of the system. We consider two different phases of the material, namely the orthorhombic and cubic lattice structures, which are energetically stable at low (< 160 K) and high (> 330 K) temperatures, respectively. The sizable geometrical differences between the two structures in term of lattice parameters, PbI6 octahedral tilts, rotation and deformations, have considerable impact on the transport properties of the material. For example, at zero bias and for all considered electron energies, the cubic phase has a larger transmission than the orthorhombic one, although both show similar electronic densities of states. Depending on the applied voltage, the current in the cubic system can be several orders of magnitude larger as compared to the one obtained for the orthorhombic sample. We attribute this enhancement in the transmission to the presence of extended states in the cubic phase due to the symmetrically shaped and ordered PbI6 octaherdra. (C) 2015 Elsevier B.V. All rights reserved. |
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
Elsevier science bv |
Place of Publication |
Amsterdam |
Editor |
|
| |
Language |
|
Wos |
000371944500011 |
Publication Date |
2015-11-06 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
0927-0248 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| |
Impact Factor |
4.784 |
Times cited |
16 |
Open Access |
|
| |
Notes |
; ; |
Approved |
Most recent IF: 4.784 |
| |
Call Number |
UA @ lucian @ c:irua:133151 |
Serial |
4163 |
| Permanent link to this record |
| |
|
| |
|
Author |
Berdiyorov, G.R.; El-Mellouhi, F.; Madjet, M.E.; Alharbi, F.H.; Peeters, F.M.; Kais, S. |
| |
Title |
Effect of halide-mixing on the electronic transport properties of organometallic perovskites |
Type |
A1 Journal article |
| |
Year |
2016 |
Publication |
Solar energy materials and solar cells
T2 – 2nd International Renewable and Sustainable Energy Conference (IRSEC), OCT 17-19, 2014, Ouarzazate, MOROCCO |
Abbreviated Journal |
Sol Energ Mat Sol C |
| |
Volume |
148 |
Issue |
148 |
Pages |
2-10 |
| |
Keywords |
A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT) |
| |
Abstract |
Using density-functional theory in combination with the nonequilibrium Green's function formalism, we study the effect of iodide/chloride and iodide/bromide mixing on the electronic transport in lead based organometallic perovskite CH3NH3PbI3, which is known to be an effective tool to tune the electronic and optical properties of such materials. We found that depending on the level and position of the halide mixing, the electronic transport can be increased by more than a factor of 4 for a given voltage biasing. The largest current is observed for small concentration of bromide substitutions located at the equatorial sites. However, full halide substitution has a negative effect on the transport properties of this material: the current drops by an order of magnitude for both CH3NH3PbCl3 and CH3NH3PbBr3 samples. (C) 2015 Elsevier B.V. All rights reserved. |
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
Elsevier science bv |
Place of Publication |
Amsterdam |
Editor |
|
| |
Language |
|
Wos |
000371944500002 |
Publication Date |
2015-12-18 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
0927-0248 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| |
Impact Factor |
4.784 |
Times cited |
23 |
Open Access |
|
| |
Notes |
; ; |
Approved |
Most recent IF: 4.784 |
| |
Call Number |
UA @ lucian @ c:irua:133150 |
Serial |
4165 |
| Permanent link to this record |
| |
|
| |
|
Author |
Razdobarin, A.G.; Mukhin, E.E.; Semenov, V.V.; Tolstyakov, S.Y.; Kochergin, M.M.; Kurskiev, G.S.; Podushnikova, K.A.; Kirilenko, D.A.; Sitnikova, A.A.; Konovalov, V.G.; Solodovchenko, S.I.; Nekhaieva, O.M.; Skorik, O.A.; Bondarenko, V.N.; Voitsenya, V.S.; |
| |
Title |
Diagnostic mirrors with transparent protection layer for ITER |
Type |
A1 Journal article |
| |
Year |
2011 |
Publication |
Fusion engineering and design |
Abbreviated Journal |
Fusion Eng Des |
| |
Volume |
86 |
Issue |
6-8 |
Pages |
1341-1344 |
| |
Keywords |
A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT) |
| |
Abstract |
Fast degradation of in-vessel optics is one of the most serious problems for all optical diagnostics in ITER. To provide the resistance to mechanical and thermal stresses along with a high stability of optical characteristics under deposition-dominated conditions we suggest using high-reflective metallic (Ag or Al) film mirrors coated on silicon substrate and protected with thin oxide film in the divertor Thomson Scattering (TS) diagnostics. The mirrors coated with Al2O3 and ZrO2 films were tested under irradiation by deuterium ions. The experimental results on the oxide films sputtering are discussed in the context of their applicability for the first mirror protection in ITER. |
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
Elsevier science sa |
Place of Publication |
Amsterdam |
Editor |
|
| |
Language |
|
Wos |
000297426500203 |
Publication Date |
2011-03-17 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
0920-3796; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| |
Impact Factor |
1.319 |
Times cited |
6 |
Open Access |
|
| |
Notes |
|
Approved |
Most recent IF: 1.319; 2011 IF: 1.490 |
| |
Call Number |
UA @ lucian @ c:irua:93631 |
Serial |
686 |
| Permanent link to this record |
| |
|
| |
|
Author |
Zhang, H.; Wang, W.; Li, X.; Han, L.; Yan, M.; Zhong, Y.; Tu, X. |
| |
Title |
Plasma activation of methane for hydrogen production in a N2 rotating gliding arc warm plasma : a chemical kinetics study |
Type |
A1 Journal article |
| |
Year |
2018 |
Publication |
Chemical engineering journal |
Abbreviated Journal |
Chem Eng J |
| |
Volume |
345 |
Issue |
345 |
Pages |
67-78 |
| |
Keywords |
A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
| |
Abstract |
In this work, a chemical kinetics study on methane activation for hydrogen production in a warm plasma, i.e., N-2 rotating gliding arc (RGA), was performed for the first time to get new insights into the underlying reaction mechanisms and pathways. A zero-dimensional chemical kinetics model was developed, which showed a good agreement with the experimental results in terms of the conversion of CH4 and product selectivities, allowing us to get a better understanding of the relative significance of various important species and their related reactions to the formation and loss of CH4, H-2, and C2H2 etc. An overall reaction scheme was obtained to provide a realistic picture of the plasma chemistry. The results reveal that the electrons and excited nitrogen species (mainly N-2(A)) play a dominant role in the initial dissociation of CH4. However, the H atom induced reaction CH4+ H -> CH3+ H-2, which has an enhanced reaction rate due to the high gas temperature (over 1200 K), is the major contributor to both the conversion of CH4 and H-2 production, with its relative contributions of > 90% and > 85%, respectively, when only considering the forward reactions. The coexistence and interaction of thermochemical and plasma chemical processes in the rotating gliding arc warm plasma significantly enhance the process performance. The formation of C-2 hydrocarbons follows a nearly one-way path of C2H6 -> C2H4 -> C2H2, explaining why the selectivities of C-2 products decreased in the order of C2H2 > C2H4 > C2H6. |
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
Elsevier Sequoia |
Place of Publication |
Lausanne |
Editor |
|
| |
Language |
|
Wos |
000430696500008 |
Publication Date |
2018-03-24 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
1385-8947; 1873-3212 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| |
Impact Factor |
6.216 |
Times cited |
25 |
Open Access |
OpenAccess |
| |
Notes |
|
Approved |
Most recent IF: 6.216 |
| |
Call Number |
UA @ lucian @ c:irua:151450 |
Serial |
5036 |
| Permanent link to this record |
| |
|
| |
|
Author |
Caen, J.; Schalm, O.; van der Snickt, G.; van der Linden, V.; Frederickx, P.; Schryvers, D.; Janssens, K.; Cornelis, E.; van Dyck, D.; Schreiner, M. |
| |
Title |
Enamels in stained-glass windows : preparation, chemical composition, microstructure and causes of deterioration |
Type |
P3 Proceeding |
| |
Year |
2005 |
Publication |
|
Abbreviated Journal |
|
| |
Volume |
|
Issue |
|
Pages |
121-126 |
| |
Keywords |
P3 Proceeding; Art; Electron microscopy for materials research (EMAT); AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation); Vision lab |
| |
Abstract |
|
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
Glassac |
Place of Publication |
Lisbon |
Editor |
|
| |
Language |
|
Wos |
|
Publication Date |
0000-00-00 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
|
ISBN |
|
Additional Links |
UA library record |
| |
Impact Factor |
|
Times cited |
|
Open Access |
|
| |
Notes |
|
Approved |
Most recent IF: NA |
| |
Call Number |
UA @ lucian @ c:irua:112025 |
Serial |
1036 |
| Permanent link to this record |
| |
|
| |
|
Author |
Sankaran, K.; Clima, S.; Mees, M.; Adelmann, C.; Tokei, Z.; Pourtois, G. |
| |
Title |
Exploring alternative metals to Cu and W for interconnects : an ab initio Insight |
Type |
P1 Proceeding |
| |
Year |
2014 |
Publication |
2014 Ieee International Interconnect Technology Conference / Advanced Metallization Conference (iitc/amc) |
Abbreviated Journal |
|
| |
Volume |
|
Issue |
|
Pages |
193-195 |
| |
Keywords |
P1 Proceeding; Engineering sciences. Technology; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
| |
Abstract |
The properties of alternative metals to Cu and W for interconnect applications are reviewed based on first-principles simulations and benchmarked in terms of intrinsic bulk resistivity and electromigration. |
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
Ieee |
Place of Publication |
New york |
Editor |
|
| |
Language |
|
Wos |
|
Publication Date |
0000-00-00 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
978-1-4799-5018-8 |
ISBN |
|
Additional Links |
UA library record; WoS full record; |
| |
Impact Factor |
|
Times cited |
|
Open Access |
|
| |
Notes |
|
Approved |
Most recent IF: NA |
| |
Call Number |
UA @ lucian @ c:irua:127034 |
Serial |
1149 |
| Permanent link to this record |
| |
|
| |
|
Author |
Lujan, G.S.; Magnus, W.; Soree, B.; Pourghaderi, M.A.; Veloso, A.; van Dal, M.J.H.; Lauwers, A.; Kubicek, S.; De Gendt, S.; Heyns, M.; De Meyer, K.; |
| |
Title |
A new method to calculate leakage current and its applications for sub-45nm MOSFETs |
Type |
H1 Book chapter |
| |
Year |
2005 |
Publication |
Solid-State Device Research (ESSDERC), European Conference
T2 – ESSDERC 2005 : proceedings of 35th European Solid-State Device Research Conference, September 12-16, 2005, Grenoble, France |
Abbreviated Journal |
|
| |
Volume |
|
Issue |
|
Pages |
489-492 |
| |
Keywords |
H1 Book chapter; Condensed Matter Theory (CMT) |
| |
Abstract |
This paper proposes a new quantum mechanical model for the calculation of leakage currents. The model incorporates both variational calculus and the transfer matrix method to compute the subband energies and the life times of the inversion layer states. The use of variational calculus simplifies the subband energy calculation due to the analytical firm of the wave functions, which offers an attractive perspective towards the calculation of the electron mobility in the channel. The model can be extended to high-k dielectrics with several layers. Good agreement between experimental data and simulation results is obtained for metal gate capacitors. |
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
Ieee |
Place of Publication |
S.l. |
Editor |
|
| |
Language |
|
Wos |
000236176200114 |
Publication Date |
2005-12-13 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
|
ISBN |
0-7803-9203-5 |
Additional Links |
UA library record; WoS full record |
| |
Impact Factor |
|
Times cited |
|
Open Access |
|
| |
Notes |
|
Approved |
Most recent IF: NA |
| |
Call Number |
UA @ lucian @ c:irua:103691 |
Serial |
2323 |
| Permanent link to this record |
| |
|
| |
|
Author |
Carrillo-Nuñez, H.; Magnus, W.; Peeters, F.M. |
| |
Title |
A non-linear variational principle for the self-consistent solution of Poisson's equation and a transport equation in the local density approximation |
Type |
P1 Proceeding |
| |
Year |
2010 |
Publication |
|
Abbreviated Journal |
|
| |
Volume |
|
Issue |
|
Pages |
171-174 |
| |
Keywords |
P1 Proceeding; Condensed Matter Theory (CMT) |
| |
Abstract |
|
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
Ieee |
Place of Publication |
New York, N.Y. |
Editor |
|
| |
Language |
|
Wos |
|
Publication Date |
0000-00-00 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
978-1-4244-7699-2 |
ISBN |
|
Additional Links |
UA library record; WoS full record; |
| |
Impact Factor |
|
Times cited |
|
Open Access |
|
| |
Notes |
|
Approved |
Most recent IF: NA |
| |
Call Number |
UA @ lucian @ c:irua:85824 |
Serial |
2347 |
| Permanent link to this record |
| |
|
| |
|
Author |
Tokei, Z.; Lanckmans, F.; van den Bosch, G.; Van Hove, M.; Maex, K.; Bender, H.; Hens, S.; van Landuyt, J. |
| |
Title |
Reliability of copper dual damascene influenced by pre-clean |
Type |
P1 Proceeding |
| |
Year |
2002 |
Publication |
Analysis Of Integrated Circuits |
Abbreviated Journal |
|
| |
Volume |
|
Issue |
|
Pages |
118-123 |
| |
Keywords |
P1 Proceeding; Electron microscopy for materials research (EMAT) |
| |
Abstract |
|
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
Ieee |
Place of Publication |
New york |
Editor |
|
| |
Language |
|
Wos |
000177689400022 |
Publication Date |
2003-06-25 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
|
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| |
Impact Factor |
|
Times cited |
5 |
Open Access |
|
| |
Notes |
Conference name: |
Approved |
Most recent IF: NA |
| |
Call Number |
UA @ lucian @ c:irua:104170 |
Serial |
2865 |
| Permanent link to this record |
| |
|
| |
|
Author |
Van de Put, M.; Thewissen, M.; Magnus, W.; Sorée, B.; Sellier, J.M. |
| |
Title |
Spectral force approach to solve the time-dependent Wigner-Liouville equation |
Type |
P1 Proceeding |
| |
Year |
2014 |
Publication |
2014 International Workshop On Computational Electronics (iwce) |
Abbreviated Journal |
|
| |
Volume |
|
Issue |
|
Pages |
|
| |
Keywords |
P1 Proceeding; Condensed Matter Theory (CMT) |
| |
Abstract |
|
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
Ieee |
Place of Publication |
New york |
Editor |
|
| |
Language |
|
Wos |
|
Publication Date |
0000-00-00 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
978-1-4799-5433-9 |
ISBN |
|
Additional Links |
UA library record; WoS full record; |
| |
Impact Factor |
|
Times cited |
|
Open Access |
|
| |
Notes |
|
Approved |
Most recent IF: NA |
| |
Call Number |
UA @ lucian @ c:irua:122221 |
Serial |
3071 |
| Permanent link to this record |
| |
|
| |
|
Author |
Dong, H.M.; Qin, H.; Zhang, J.; Peeters, F.M.; Xu, W. |
| |
Title |
Terahertz absorption window in bilayer graphene |
Type |
H1 Book chapter |
| |
Year |
2009 |
Publication |
|
Abbreviated Journal |
|
| |
Volume |
|
Issue |
|
Pages |
247-248 |
| |
Keywords |
H1 Book chapter; Condensed Matter Theory (CMT) |
| |
Abstract |
We present a detailed theoretical study of terahertz (THz) optical absorption in bilayer graphene. Considering an air/graphene/dielectric-wafer system, we find that there is an absorption window in the range 3 similar to 30 THz. Such an absorption window is induced by different transition energies required for inter- and intra-band optical absorption in the presence of the Pauli blockade effect. As a result, the position and width of this THz absorption window depend sensitively on temperature and carrier density of the system. These results are pertinent to the applications of recently developed graphene systems as novel optoelectronic devices such as THz photo-detectors. |
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
Ieee |
Place of Publication |
New York, N.Y. |
Editor |
|
| |
Language |
|
Wos |
|
Publication Date |
0000-00-00 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
|
ISBN |
978-1-4244-5416-7 |
Additional Links |
UA library record; WoS full record; |
| |
Impact Factor |
|
Times cited |
|
Open Access |
|
| |
Notes |
|
Approved |
Most recent IF: NA |
| |
Call Number |
UA @ lucian @ c:irua:99225 |
Serial |
3506 |
| Permanent link to this record |
| |
|
| |
|
Author |
Verreck, D.; Van de Put, M.L.; Verhulst, A.S.; Sorée, B.; Magnus, W.; Dabral, A.; Thean, A.; Groeseneken, G. |
| |
Title |
15-band spectral envelope function formalism applied to broken gap tunnel field-effect transistors |
Type |
P1 Proceeding |
| |
Year |
2015 |
Publication |
18th International Workshop On Computational Electronics (iwce 2015) |
Abbreviated Journal |
|
| |
Volume |
|
Issue |
|
Pages |
|
| |
Keywords |
P1 Proceeding; Condensed Matter Theory (CMT) |
| |
Abstract |
A carefully chosen heterostructure can significantly boost the performance of tunnel field-effect transistors (TFET). Modelling of these hetero-TFETs requires a quantum mechanical (QM) approach with an accurate band structure to allow for a correct description of band-to-band-tunneling. We have therefore developed a fully QM 2D solver, combining for the first time a full zone 15-band envelope function formalism with a spectral approach, including a heterostructure basis set transformation. Simulations of GaSb/InAs broken gap TFETs illustrate the wide body capabilities and transparant transmission analysis of the formalism. |
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
Ieee |
Place of Publication |
New york |
Editor |
|
| |
Language |
|
Wos |
000380398200055 |
Publication Date |
2015-10-26 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
978-0-692-51523-5 |
ISBN |
|
Additional Links |
UA library record; WoS full record |
| |
Impact Factor |
|
Times cited |
|
Open Access |
|
| |
Notes |
|
Approved |
Most recent IF: NA |
| |
Call Number |
UA @ lucian @ c:irua:134998 |
Serial |
4131 |
| Permanent link to this record |
| |
|
| |
|
Author |
Van de Put, M.L.; Vandenberghe, W.G.; Magnus, W.; Sorée, B.; Fischetti, M.V. |
| |
Title |
Modeling of inter-ribbon tunneling in graphene |
Type |
P1 Proceeding |
| |
Year |
2015 |
Publication |
18th International Workshop On Computational Electronics (iwce 2015) |
Abbreviated Journal |
|
| |
Volume |
|
Issue |
|
Pages |
|
| |
Keywords |
P1 Proceeding; Condensed Matter Theory (CMT) |
| |
Abstract |
The tunneling current between two crossed graphene ribbons is described invoking the empirical pseudopotential approximation and the Bardeen transfer Hamiltonian method. Results indicate that the density of states is the most important factor determining the tunneling current between small (similar to nm) ribbons. The quasi-one dimensional nature of graphene nanoribbons is shown to result in resonant tunneling. |
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
Ieee |
Place of Publication |
New york |
Editor |
|
| |
Language |
|
Wos |
|
Publication Date |
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
978-0-692-51523-5 |
ISBN |
|
Additional Links |
UA library record; WoS full record |
| |
Impact Factor |
|
Times cited |
|
Open Access |
|
| |
Notes |
|
Approved |
Most recent IF: NA |
| |
Call Number |
UA @ lucian @ c:irua:134997 |
Serial |
4206 |
| Permanent link to this record |
| |
|
| |
|
Author |
Brammertz, G.; Buffiere, M.; Verbist, C.; Bekaert, J.; Batuk, M.; Hadermann, J.; et al. |
| |
Title |
Process variability in Cu2ZnSnSe4 solar cell devices: Electrical and structural investigations |
Type |
P1 Proceeding |
| |
Year |
2015 |
Publication |
The conference record of the IEEE Photovoltaic Specialists Conference
T2 – IEEE 42nd Photovoltaic Specialist Conference (PVSC), JUN 14-19, 2015, New Orleans, LA |
Abbreviated Journal |
|
| |
Volume |
|
Issue |
|
Pages |
|
| |
Keywords |
P1 Proceeding; Engineering sciences. Technology; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT) |
| |
Abstract |
We have fabricated 9.7% efficient Cu2ZnSnSe4/CdS/ZnO solar cells by H2Se selenization of sequentially sputtered metal layers. Despite the good efficiency obtained, process control appears to be difficult. In the present contribution we compare the electrical and physical properties of two devices with nominal same fabrication procedure, but 1% and 9.7% power conversion efficiency respectively. We identify the problem of the lower performing device to be the segregation of ZnSe phases at the backside of the sample. This ZnSe seems to be the reason for the strong bias dependent photocurrent observed in the lower performing devices, as it adds a potential barrier for carrier collection. The reason for the different behavior of the two nominally same devices is not fully understood, but speculated to be related to sputtering variability. |
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
Ieee |
Place of Publication |
New york |
Editor |
|
| |
Language |
|
Wos |
|
Publication Date |
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
978-1-4799-7944-8 |
ISBN |
|
Additional Links |
UA library record; WoS full record |
| |
Impact Factor |
|
Times cited |
|
Open Access |
|
| |
Notes |
|
Approved |
Most recent IF: NA |
| |
Call Number |
UA @ lucian @ c:irua:132335 |
Serial |
4229 |
| Permanent link to this record |
| |
|
| |
|
Author |
Verhulst, A.S.; Verreck, D.; Smets, Q.; Kao, K.-H.; Van de Put, M.; Rooyackers, R.; Sorée, B.; Vandooren, A.; De Meyer, K.; Groeseneken, G.; Heyns, M.M.; Mocuta, A.; Collaert, N.; Thean, A.V.-Y. |
| |
Title |
Perspective of tunnel-FET for future low-power technology nodes |
Type |
P1 Proceeding |
| |
Year |
2014 |
Publication |
2014 Ieee International Electron Devices Meeting (iedm) |
Abbreviated Journal |
|
| |
Volume |
|
Issue |
|
Pages |
|
| |
Keywords |
P1 Proceeding; Condensed Matter Theory (CMT) |
| |
Abstract |
|
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
Ieee |
Place of Publication |
New york |
Editor |
|
| |
Language |
|
Wos |
|
Publication Date |
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
978-1-4799-8000-0 |
ISBN |
|
Additional Links |
UA library record; WoS full record |
| |
Impact Factor |
|
Times cited |
|
Open Access |
|
| |
Notes |
|
Approved |
Most recent IF: NA |
| |
Call Number |
UA @ lucian @ c:irua:144789 |
Serial |
4679 |
| Permanent link to this record |
