|
“Quantitative strain mapping of InAs/InP quantum dots with 1 nm spatial resolution using dark field electron holography”. Cooper D, Rouvière J-L, Béché, A, Kadkhodazadeh S, Semenova ES, Dunin-Borkowsk R, Applied physics letters 99, 261911 (2011). http://doi.org/10.1063/1.3672194
Abstract: The optical properties of semiconductor quantum dots are greatly influenced by their strain state. Dark field electron holography has been used to measure the strain in InAsquantum dotsgrown in InP with a spatial resolution of 1 nm. A strain value of 5.4% ± 0.1% has been determined which is consistent with both measurements made by geometrical phase analysis of high angle annular dark field scanning transmission electron microscopy images and with simulations.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 26
DOI: 10.1063/1.3672194
|
|
|
“Strain mapping for the silicon-on-insulator generation of semiconductor devices by high-angle annular dark field scanning electron transmission microscopy”. Cooper D, Le Royer C, Béché, A, Rouvière J-L, Applied Physics Letters 100, 233121 (2012). http://doi.org/10.1063/1.4723572
Abstract: The strain in pMOS p-type metal-oxide-semiconductor devicesgrown on silicon-on-insulator substrates has been measured by using the geometrical phase analysis of high angle annular dark field scanning electron microscopy. We show that by using the latest generations of electron microscopes, the strain can now be quantitatively measured with a large field of view, a spatial resolution as low as 1 nm with a sensitivity as good as 0.15%. This technique is extremely flexible, provides both structural and strain information, and can be applied to all types of nanoscale materials both quickly and easily.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
DOI: 10.1063/1.4723572
|
|
|
“Strain mapping with nm-scale resolution for the silicon-on-insulator generation of semiconductor devices by advanced electron microscopy”. Cooper D, Denneulin T, Barnes J-P, Hartmann J-M, Hutin L, Le Royer C, Béché, A, Rouvière J-L, Applied Physics Letters 112, 124505 (2012). http://doi.org/10.1063/1.4767925
Abstract: Strain engineering in the conduction channel is a cost effective method of boosting the performance in state-of-the-art semiconductor devices. However, given the small dimensions of these devices, it is difficult to quantitatively measure the strain with the required spatial resolution. Three different transmission electron microscopy techniques, high-angle annular dark field scanning transmission electron microscopy, dark field electron holography, and nanobeam electron diffraction have been applied to measure the strain in simple bulk and SOI calibration specimens. These techniques are then applied to different gate length SiGe SOI pFET devices in order to measure the strain in the conduction channel. For these devices, improved spatial resolution is required, and strain maps with spatial resolutions as good as 1 nm have been achieved. Finally, we discuss the relative advantages and disadvantages of using these three different techniques when used for strain measurement.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 14
DOI: 10.1063/1.4767925
|
|
|
“Improved strain precision with high spatial resolution using nanobeam precession electron diffraction”. Rouvière J-L, Béché, A, Martin Y, Denneulin T, Cooper D, Applied physics letters 103, 241913 (2013). http://doi.org/10.1063/1.4829154
Abstract: NanoBeam Electron Diffraction is a simple and efficient technique to measure strain in nanostructures. Here, we show that improved results can be obtained by precessing the electron beam while maintaining a few nanometer probe size, i.e., by doing Nanobeam Precession Electron Diffraction (N-PED). The precession of the beam makes the diffraction spots more uniform and numerous, making N-PED more robust and precise. In N-PED, smaller probe size and better precision are achieved by having diffraction disks instead of diffraction dots. Precision in the strain measurement better than 2 × 10−4 is obtained with a probe size approaching 1 nm in diameter.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 53
DOI: 10.1063/1.4829154
|
|
|
“Thermal characterization of polycrystalline diamond thin film heat spreaders grown on GaN HEMTs”. Zhou Y, Ramaneti R, Anaya J, Korneychuk S, Derluyn J, Sun H, Pomeroy J, Verbeeck J, Haenen K, Kuball M, Applied physics letters 111, 041901 (2017). http://doi.org/10.1063/1.4995407
Abstract: Polycrystalline diamond (PCD) was grown onto high-k dielectric passivated AlGaN/GaN-on-Si high electron mobility transistor (HEMT) structures, with film thicknesses ranging from 155 to 1000 nm. Transient thermoreflectance results were combined with device thermal simulations to investigate the heat spreading benefit of the diamond layer. The observed thermal conductivity (k(Dia)) of PCD films is one-to-two orders of magnitude lower than that of bulk PCD and exhibits a strong layer thickness dependence, which is attributed to the grain size evolution. The films exhibit a weak temperature dependence of k(Dia) in the measured 25-225 degrees C range. Device simulation using the experimental jDia and thermal boundary resistance values predicts at best a 15% reduction in peak temperature when the source-drain opening of a passivated AlGaN/GaN-on-Si HEMT is overgrown with PCD. Published by AIP Publishing.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 78
DOI: 10.1063/1.4995407
|
|
|
“Controlling the formation and stability of ultra-thin nickel silicides : an alloying strategy for preventing agglomeration”. Geenen FA, van Stiphout K, Nanakoudis A, Bals S, Vantomme A, Jordan-Sweet J, Lavoie C, Detavernier C, Journal of applied physics 123, 075303 (2018). http://doi.org/10.1063/1.5009641
Abstract: The electrical contact of the source and drain regions in state-of-the-art CMOS transistors is nowadays facilitated through NiSi, which is often alloyed with Pt in order to avoid morphological agglomeration of the silicide film. However, the solid-state reaction between as-deposited Ni and the Si substrate exhibits a peculiar change for as-deposited Ni films thinner than a critical thickness of t(c) = 5 nm. Whereas thicker films form polycrystalline NiSi upon annealing above 450 degrees C, thinner films form epitaxial NiSi2 films that exhibit a high resistance toward agglomeration. For industrial applications, it is therefore of utmost importance to assess the critical thickness with high certainty and find novel methodologies to either increase or decrease its value, depending on the aimed silicide formation. This paper investigates Ni films between 0 and 15 nm initial thickness by use of “thickness gradients,” which provide semi-continuous information on silicide formation and stability as a function of as-deposited layer thickness. The alloying of these Ni layers with 10% Al, Co, Ge, Pd, or Pt renders a significant change in the phase sequence as a function of thickness and dependent on the alloying element. The addition of these ternary impurities therefore changes the critical thickness t(c). The results are discussed in the framework of classical nucleation theory. Published by AIP Publishing.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.068
Times cited: 23
DOI: 10.1063/1.5009641
|
|
|
“Atomic-scale identification of novel planar defect phases in heteroepitaxial YBa2Cu3O7-\delta thin films”. Gauquelin N, Zhang H, Zhu G, Wei JYT, Botton GA, AIP advances 8, 055022 (2018). http://doi.org/10.1063/1.5011761
Abstract: We have discovered two novel types of planar defects that appear in heteroepitaxial YBa2Cu3O7-delta(YBCO123) thin films, grown by pulsed-laser deposition (PLD) either with or without a La2/3Ca1/3MnO3 (LCMO) overlayer, using the combination of highangle annular dark-field scanning transmission electron microscopy (HAADF-STEM) imaging and electron energy loss spectroscopy (EELS) mapping for unambiguous identification. These planar lattice defects are based on the intergrowth of either a BaO plane between two CuO chains or multiple Y-O layers between two CuO2 planes, resulting in non-stoichiometric layer sequences that could directly impact the high-Tc superconductivity. (C) 2018 Author(s).
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 1.568
Times cited: 1
DOI: 10.1063/1.5011761
|
|
|
“Topological analysis of paraxially scattered electron vortex beams”. Lubk A, Clark L, Guzzinati G, Verbeeck J, Physical review : A : atomic, molecular and optical physics 87, 033834 (2013). http://doi.org/10.1103/PhysRevA.87.033834
Abstract: We investigate topological aspects of subnanometer electron vortex beams upon elastic propagation through atomic scattering potentials. Two main aspects can be distinguished: (i) significantly reduced delocalization compared to a similar nonvortex beam if the beam centers on an atomic column and (ii) site symmetry dependent splitting of higher-order vortex beams. Furthermore, the results provide insight into the complex vortex line fabric within the elastically scattered wave containing characteristic vortex loops predominantly attached to atomic columns and characteristic twists of vortex lines around atomic columns. DOI: 10.1103/PhysRevA.87.033834
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.925
Times cited: 26
DOI: 10.1103/PhysRevA.87.033834
|
|
|
“Evidence of tetragonal distortion as the origin of the ferromagnetic ground state in gamma-Fe nanoparticles”. Augustyns V, van Stiphout K, Joly V, Lima TAL, Lippertz G, Trekels M, Menendez E, Kremer F, Wahl U, Costa ARG, Correia JG, Banerjee D, Gunnlaugsson HP, von Bardeleben J, Vickridge I, Van Bael MJ, Hadermann J, Araujo JP, Temst K, Vantomme A, Pereira LMC, Physical review B 96, 174410 (2017). http://doi.org/10.1103/PHYSREVB.96.174410
Abstract: <script type='text/javascript'>document.write(unpmarked('gamma-Fe and related alloys are model systems of the coupling between structure and magnetism in solids. Since different electronic states (with different volumes and magnetic ordering states) are closely spaced in energy, small perturbations can alter which one is the actual ground state. Here, we demonstrate that the ferromagnetic state of gamma-Fe nanoparticles is associated with a tetragonal distortion of the fcc structure. Combining a wide range of complementary experimental techniques, including low-temperature Mossbauer spectroscopy, advanced transmission electron microscopy, and synchrotron radiation techniques, we unambiguously identify the tetragonally distorted ferromagnetic ground state, with lattice parameters a = 3.76(2) angstrom and c = 3.50(2) angstrom, and a magnetic moment of 2.45(5) mu(B) per Fe atom. Our findings indicate that the ferromagnetic order in nanostructured gamma-Fe is generally associated with a tetragonal distortion. This observation motivates a theoretical reassessment of the electronic structure of gamma-Fe taking tetragonal distortion into account.'));
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 1
DOI: 10.1103/PHYSREVB.96.174410
|
|
|
“Interplay of morphology, composition, and optical properties of InP-based quantum dots emitting at the 1.55 \mum telecom wavelength”. Carmesin C, Schowalter M, Lorke M, Mourad D, Grieb T, Müller-Caspary K, Yacob M, Reithmaier JP, Benyoucef M, Rosenauer A, Jahnke F, Physical review B 96, 235309 (2017). http://doi.org/10.1103/PHYSREVB.96.235309
Abstract: <script type='text/javascript'>document.write(unpmarked('Results for the development and detailed analysis of self-organized InAs/InAlGaAs/InP quantum dots suitable for single-photon emission at the 1.55 mu m telecom wavelength are reported. The structural and compositional properties of the system are obtained from high-resolution scanning transmission electron microscopy of individual quantum dots. The system is composed of almost pure InAs quantum dots embedded in quaternary InAlGaAs barrier material, which is lattice matched to the InP substrate. When using the measured results for a representative quantum-dot geometry as well as experimentally reconstructed alloy concentrations, a combination of strain-field and electronic-state calculations is able to reproduce the quantum-dot emission wavelength in agreement with the experimentally determined photoluminescence spectrum. The inhomogeneous broadening of the latter can be related to calculated variations of the emission wavelength for the experimentally deduced In-concentration fluctuations and size variations.'));
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 3
DOI: 10.1103/PHYSREVB.96.235309
|
|
|
“Synthesis of high-oxidation Y-Ba-Cu-O phases in superoxygenated thin films”. Zhang H, Gauquelin N, McMahon C, Hawthorn DG, Botton GA, Wei JYT, Physical review materials 2, 033803 (2018). http://doi.org/10.1103/PHYSREVMATERIALS.2.033803
Abstract: It is known that solid-state reaction in high-pressure oxygen can stabilize high-oxidation phases of Y-Ba-Cu-O superconductors in powder form. We extend this superoxygenation concept of synthesis to thin films which, due to their large surface-to-volume ratio, are more reactive thermodynamically. Epitaxial thin films of YBa2Cu3O7-delta grown by pulsed laser deposition are annealed at up to 700 atm O-2 and 900 degrees C, in conjunction with Cu enrichment by solid-state diffusion. The films show the clear formation of Y2Ba4Cu7O15-delta and Y2Ba4Cu8O16 as well as regions of YBa2Cu5O9-delta and YBa2Cu6O10-delta phases, according to scanning transmission electron microscopy, x-ray diffraction, and x-ray absorption spectroscopy. Similarly annealed YBa2Cu3O7-delta powders show no phase conversion. Our results demonstrate a route of synthesis towards discovering more complex phases of cuprates and other superconducting oxides.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 2
DOI: 10.1103/PHYSREVMATERIALS.2.033803
|
|
|
“Atomic-scale quantification of charge densities in two-dimensional materials”. Müller-Caspary K, Duchamp M, Roesner M, Migunov V, Winkler F, Yang H, Huth M, Ritz R, Simson M, Ihle S, Soltau H, Wehling T, Dunin-Borkowski RE, Van Aert S, Rosenauer A, Physical review B 98, 121408 (2018). http://doi.org/10.1103/PHYSREVB.98.121408
Abstract: The charge density is among the most fundamental solid state properties determining bonding, electrical characteristics, and adsorption or catalysis at surfaces. While atomic-scale charge densities have as yet been retrieved by solid state theory, we demonstrate both charge density and electric field mapping across a mono-/bilayer boundary in 2D MoS2 by momentum-resolved scanning transmission electron microscopy. Based on consistency of the four-dimensional experimental data, statistical parameter estimation and dynamical electron scattering simulations using strain-relaxed supercells, we are able to identify an AA-type bilayer stacking and charge depletion at the Mo-terminated layer edge.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 10
DOI: 10.1103/PHYSREVB.98.121408
|
|
|
“The application of transmission electron microscopy (TEM) in the research of inorganic colorants in stained glass windows and parchment illustrations”. Fredrickx P, Wouters J, Schryvers D Archetype, London, page 137 (2003).
Keywords: H3 Book chapter; Electron microscopy for materials research (EMAT)
|
|
|
“Novel poly(butylene succinate) nanocomposites containing strontium hydroxyapatite nanorods with enhanced osteoconductivity for tissue engineering applications”. Nerantzaki M, Filippousi M, Van Tendeloo G, Terzopoulou Z, Bikiaris D, Goudouri OM, Detsch R, Grueenewald A, Boccaccini AR, Express polymer letters 9, 773 (2015). http://doi.org/10.3144/expresspolymlett.2015.73
Abstract: Three series of poly(butylene succinate) (PBSu) nanocomposites containing 0.5, 1 and 2.5 wt% strontium hydroxyapatite [Sr-5(PO4)(3)OH] nanorods (SrHAp nrds) were prepared by in situ polymerisation. The structural effects of Sr-5(PO4)(3)OH nanorods, for the different concentrations, inside the polymeric matrix (PBSu), were studied through high angle annular dark field scanning transmission electron microscopy (HAADF-STEM). HAADF-STEM measurements revealed that the SrHAp nanorods at low concentrations are dispersed inside the polymeric PBSu matrix while in 1 wt% some aggregates are formed. These aggregations affect the mechanical properties giving an enhancement for the concentration of 0.5 wt% SrHAp nrds in tensile strength, while a reduction is recorded for higher loadings of the nanofiller. Studies on enzymatic hydrolysis revealed that all nanocomposites present higher hydrolysis rates than neat PBSu, indicating that nanorods accelerate the hydrolysis degradation process. In vitro bioactivity tests prove that SrHAp nrds promote the formation of hydroxyapatite on the PBSu surface. All nanocomposites were tested also in relevant cell culture using osteoblast-like cells (MG-63) to demonstrate their biocompatibility showing SrHAp nanorods support cell attachment.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.983
Times cited: 21
DOI: 10.3144/expresspolymlett.2015.73
|
|
|
“Identification of new superconducting compounds by electron microscopy”. Van Tendeloo G, Krekels T Cambridge University Press, Cambridge, page 161 (2000).
Keywords: H3 Book chapter; Electron microscopy for materials research (EMAT)
|
|
|
“Microstructure of quenched Ni-rich Ni-Ti shape memory alloys”. Somsen C, Kästner J, Wassermann EF, Boullay P, Schryvers D, Journal de physique: 4
T2 –, 8th European Symposium on Martensitic Transformations (ESOMAT2000), SEP 04-08, 2000, COMO, ITALY 11, 445 (2001). http://doi.org/10.1051/jp4:2001874
Abstract: Microstructural investigations with transmission electron microscopy were carried out on quenched Ni-Ti alloys with 52 and 54.5 at% Ni. For the Ni52Ti48 specimen long time exposed diffraction patterns of a single grain show besides the expected reflections of the B2-phase, two sets of extra reflections in different zones. The first type of spots is explained by lattice displacement waves, which are regarded as precursors of the martensitic Ni-Ti phases, B 19' and R-phase, respectively. The second set of reflection with more diffuse intensity than the other reflections is related to Ni4Ti3 precipitates in an early state of formation. For the Ni-richer Ni54.5Ti45.5 alloy only Ni4Ti3 precipitates in an early state of formation are found but no precursors of the B 19'- and R-phase.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 2
DOI: 10.1051/jp4:2001874
|
|
|
“Defect structure of Hg-based ceramic superconductors (invited)”. Van Tendeloo G, Hervieu M, Chaillout C, Sciences , 949 (1994)
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
|
|
|
“HREM imaging analysis in the study of pretransition and nucleation phenomena in alloys (Invited)”. Schryvers D, Van Tendeloo G, van Landuyt J, Le Tanner, , 659 (1994)
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
|
|
|
“HREM study of Rb6C60 and helical shaped carbon nanotubules”. Bernaerts D, Zhang X, Zhang X, Van Tendeloo G, Vanlanduyt J, Amelinckx S, Sciences , 305 (1994)
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
|
|
|
“3D FIB/SEM study of Ni4Ti3 precipitates in Ni-Ti alloys with different thermal-mechanical histories”. Cao S, Nishida M, Somsen C, Eggeler G, Schryvers D, , 02004 (2009). http://doi.org/10.1051/esomat/200902004
Abstract: The three-dimensional size, morphology and distribution of Ni4Ti3 precipitates growing in binary Ni-rich Ni-Ti alloys have been investigated via a slice view procedure in a Dual-Beam FIB/SEM system, in order to better stress-free Ni50.8Ti49.2 alloy with all four variants of precipitates and a compressed Ni51Ti49 alloy with aligned precipitates in one family were studied. The Ni4Ti3 precipitates reach a volume fraction of 9.6% in the reconstructed region of the stress-free alloy and 4.3% in the compressed one. In both cases, the mean volume, specific surface area, sphericity and aspect ratio of the precipitates are calculated and the Pair Distribution Functions of the precipitates are obtained. It is shown that most precipitates in the stress-free sample grow larger and have a more lenticular shape, while those in the compressed sample are more cylindrical. Deviations from these ideal shapes reveal internal steps in the stress-free sample and lamellae formation in the compressed one.
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
Times cited: 1
DOI: 10.1051/esomat/200902004
|
|
|
“3D strain fields surrounding Ni4Ti3: direct measurement and correlation with the R-phase”. Tirry W, Schryvers D, , 02032 (2009). http://doi.org/10.1051/esomat/200902032
Abstract: Strain fields introduced by coherent Ni4Ti3 precipitates in austenitic Ni-Ti are believed to be a possible origin of why the R-phase transformation is introduced as an extra step before transforming to the B19'. The presence of this strain field was already confirmed in the past by conventional transmission electron microscopy (TEM) techniques and measured quantitatively by high resolution TEM (HRTEM). This time the geometrical phase method is applied on HRTEM micrographs to measure the full 3D strain tensor of the strain fields. Since each atomic resolution micrograph only results in a 2D measurement of the strain, observations in two different zone orientations are combined to retrieve the 3 x 3 strain tensor. In this work observations in a [1-1 1](B2) and [1 0-1](B2) zone orientation are used and this in case of precipitates with a diameter of around 50nm. In a next step the measured strain tensor is compared to the calculated eigenstrain of the R-phase in reference to the B2 matrix. This comparison shows that the introduced strain is very similar to the eigenstrain of one R-phase variant. Since for both structures, Ni4Ti3 and R-phase, four orientation variants are possible, each variant of the R-phase is thus able to accommodate the strain field of one of the Ni4Ti3 variants.
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
DOI: 10.1051/esomat/200902032
|
|
|
“Pinning of the martensitic microstructures by dislocations in Cu74.08Al23.13Be2.79”. Idrissi H, Schryvers D, Salje EKH, Zhang H, Carpenter MA, Moya X, , 02029 (2009). http://doi.org/10.1051/esomat/200902029
Abstract: A single crystal of Cu74.08Al23.13Be2.79 undergoes a martensitic phase transition at 246K and 232K under heating and cooling, respectively. Surprisingly, the martensite phase is elastically much harder than the austenite phase showing that interfaces between various crystallographic variants are strongly pinned and can not be moved by external stress while the phase boundary between the austenite and martensite regions in the sample remains mobile. This unusual behavior was revealed by Dynamical Mechanical Analysis and Resonant Ultrasound Spectroscopy. Transmission Electron Microscopy shows that the pinning is generated by dislocations, which are inherited from the austenite phase. Such dislocations can hinder the movement of stacking faults in the 18R martensite structure or twin boundaries between martensite variants.
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
Times cited: 2
DOI: 10.1051/esomat/200902029
|
|
|
“TEM study of the mechanism of Ni ion release from Nitinol wires with original oxides”. Tian H, Schryvers D, Shabalovskaya S, van Humbeeck J, , 05027 (2009). http://doi.org/10.1051/esomat/200905027
Abstract: The surface of commercial Nitinol wires with original oxides and a thickness in the 30-190 nm range was investigated by different state of art TEM techniques. The oxide surface layer was identified as a combination of TiO and TiO2 depending on the processing of the wire. Between the core of the wires and the oxidized surface, an interfacial Ni3Ti nanolayer was observed while Ni nanoparticles are found inside the original oxide. The particle sizes, their distribution in the surface and the Ti-O stoichiometry were deduced from the analysis of the obtained data. Molecular dynamics calculations performed for evaluation of the stability of Ni particles relative to the atomic state revealed that a pure Ni particle has a lower energy than free Ni atoms inside the TiO2 lattice. The obtained results are discussed with respect to surface stability and Ni release in the human body.
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
Times cited: 1
DOI: 10.1051/esomat/200905027
|
|
|
“Transmission electron microscopy study of low-hysteresis shape memory alloys”. Delville R, James RD, Salman U, Finel A, Schryvers D, , 02005 (2009). http://doi.org/10.1051/esomat/200902005
Abstract: Recent findings have linked low hysteresis in shape memory alloys with phase compatibility between austenite and martensite. In order to investigate the evolution of microstructure as the phase compatibility increases and the hysteresis is reduced, transmission electron microscopy was used to study the alloy system Ti50Ni50-xPdx where the composition is systemically tuned to approach perfect compatibility. Changes in morphology, twinning density and twinning modes are reported along with special microstructures occurring when the compatibility is achieved. In addition, the interface between austenite and a single variant of martensite was studied by high-resolution and conventional electron microscopy. The atomically sharp, defect free, low energy configuration of the interface suggests that it plays an important role in the lowering of hysteresis. Finally, dynamical modeling of the martensitic transformation using the phase-field micro-elasticity model within the geometrically linear theory succeeded in reproducing the change in microstructure as the compatibility condition is satisfied. Latest results on the extension of these findings in other Ni-Ti based ternary/quaternary systems are also reported.
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
Times cited: 3
DOI: 10.1051/esomat/200902005
|
|
|
“Electron microscopy of fullerenes and fullerene related structures”. Van Tendeloo G, van Landuyt J, Amelinckx S, , 498 (1994)
Keywords: P3 Proceeding; Electron microscopy for materials research (EMAT)
|
|
|
“ALN nanoparticles XANES analysis: local atomic and electronic structure”. Soldatov A, Yalovega G, Smolentsev G, Kravtsova A, Lamoen D, Balasubramanian C, Marcelli A, Cinque G, Bellucci S, Nuclear Instruments &, Methods In Physics Research Section A-Accelerators Spectrometers Detectors And Associated Equipment 575, 85 (2007). http://doi.org/10.1016/j.nima.2007.01.031
Keywords: A1 Journal article; Electron Microscopy for Materials Science (EMAT);
Impact Factor: 1.362
Times cited: 3
DOI: 10.1016/j.nima.2007.01.031
|
|
|
“Electron microscopy and Rutherford backscattering spectrometry characterisation of 6H SiC samples implanted with He+”. Frangis N, van Landuyt J, Grimaldi MG, Calcagno L, Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms
T2 –, Symposium 1 on New Trends in Ion Beam Processing of Materials, at the, E-MRS 96 Spring Meeting, June 04-07, 1996, Strasbourg, France 120, 186 (1996). http://doi.org/10.1016/S0168-583X(96)00506-X
Abstract: 6H SiC single crystals were implanted al room temperature with 1 MeV He+ up to a fluence of 2 x 10(17) at./cm(2) RBS-channeling analysis with a 2 MeV He+ beam indicated the formation of extended defects or the generation of point defects at a constant concentration over a depth of about 1 mu m. Electron microscopy characterisation revealed the presence of two amorphous buried layers at depths of about 1,75 and 4.8 mu m. They an due to the implantation and to the analysing RES beam, respectively, No extended planar or linear faults were found in the region between the surface and the first amorphous layer. However, at the surface, a 50 nm thick amorphous layer was observed in which crystalline inclusions were embedded. Electron diffraction and HREM data of the inclusions were typical for diamond, These inclusions were even found in the crystalline SiC material below this layer, however at a reduced density.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 1.124
Times cited: 2
DOI: 10.1016/S0168-583X(96)00506-X
|
|
|
“High-resolution electron microscopy for semiconducting materials science”. van Landuyt J, Vanhellemont J Elsevier, Amsterdam, page 1109 (1994).
Keywords: H3 Book chapter; Electron microscopy for materials research (EMAT)
|
|
|
“On the phase-like nature of the 7m structure in ni-al”. Schryvers D, Tanner LE, , 849 (1994)
Keywords: P1 Proceeding; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Times cited: 1
|
|
|
“Recent results on characterization of detonation nanodiamonds”. Vlasov II, Turner S, Van Tendeloo G, Shiryaev AA Elsevier, Amsterdam, page 291 (2012).
Keywords: H3 Book chapter; Electron microscopy for materials research (EMAT)
|
|