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Author Ramos, I.R.O.; Ferreira, W.P.; Munarin, F.F.; Peeters, F.M. url  doi
openurl 
  Title Dynamical properties and melting of binary two-dimensional colloidal alloys Type A1 Journal article
  Year 2014 Publication Physical review : E : statistical, nonlinear, and soft matter physics Abbreviated Journal Phys Rev E  
  Volume 90 Issue 6 Pages 062311  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract A two-dimensional (2D) binary colloidal system consisting of interacting dipoles is investigated using an analytical approach. Within the harmonic approximation we obtain the phonon spectrum of the system as a function of the composition, dipole-moment ratio, and mass ratio between the small and big particles. Through a systematic analysis of the phonon spectra we are able to determine the stability region of the different lattice structures of the colloidal alloys. The gaps in the phonon frequency spectrum, the optical frequencies in the long-wavelength limit, and the sound velocity are discussed as well. Using the modified Lindemann criterion and within the harmonic approximation we estimate the melting temperature of the sublattice generated by the big particles.  
  Address  
  Corporate Author Thesis  
  Publisher (down) American Institute of Physics Place of Publication Woodbury (NY) Editor  
  Language Wos 000346833500007 Publication Date 2014-12-22  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1539-3755;1550-2376; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.366 Times cited 4 Open Access  
  Notes ; This work was supported by the Brazilian agencies CNPq (Program Science Without Border), CAPES, and FUNCAP (International cooperation program); the Flemish Science Foundation (FWO-Vl); the bilateral program between Flanders and Brazil (CNPq-FWO collaborating project); and the VLIR-UOS (University Development Cooperation). I.R.O.R. is grateful to Professor E. B. Barros for fruitful discussions. W. P. F. thanks Professor D. Martin A. Buzza for his illuminating comments on this manuscript. ; Approved Most recent IF: 2.366; 2014 IF: 2.288  
  Call Number UA @ lucian @ c:irua:122797 Serial 771  
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Author Zhao, H.J.; Misko, V.R.; Peeters, F.M. url  doi
openurl 
  Title Dynamics of self-organized driven particles with competing range interaction Type A1 Journal article
  Year 2013 Publication Physical review : E : statistical, nonlinear, and soft matter physics Abbreviated Journal Phys Rev E  
  Volume 88 Issue 2 Pages 022914-22917  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract Nonequilibrium self-organized patterns formed by particles interacting through competing range interaction are driven over a substrate by an external force. We show that, with increasing driving force, the preexisted static patterns evolve into dynamic patterns either via disordered phase or depinned patterns or via the formation of nonequilibrium stripes. Strikingly, the stripes are formed either in the direction of the driving force or in the transverse direction, depending on the pinning strength. The revealed dynamical patterns are summarized in a dynamical phase diagram.  
  Address  
  Corporate Author Thesis  
  Publisher (down) American Institute of Physics Place of Publication Woodbury (NY) Editor  
  Language Wos 000323333000014 Publication Date 2013-08-19  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1539-3755;1550-2376; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.366 Times cited 23 Open Access  
  Notes ; This work was supported by the “Odysseus” Program of the Flemish Government and the Flemish Science Foundation (FWO-Vl). ; Approved Most recent IF: 2.366; 2013 IF: 2.326  
  Call Number UA @ lucian @ c:irua:110743 Serial 783  
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Author Slachmuylders, A.F.; Partoens, B.; Peeters, F.M.; Magnus, W. url  doi
openurl 
  Title Effect of a metallic gate on the energy levels of a shallow donor Type A1 Journal article
  Year 2008 Publication Applied physics letters Abbreviated Journal Appl Phys Lett  
  Volume 92 Issue 8 Pages 083104,1-3  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher (down) American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000254297300074 Publication Date 2008-02-27  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.411 Times cited 14 Open Access  
  Notes Approved Most recent IF: 3.411; 2008 IF: 3.726  
  Call Number UA @ lucian @ c:irua:69618 Serial 792  
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Author Chen, Z.; Bleiner, D.; Bogaerts, A. doi  openurl
  Title Effect of ambient pressure on laser ablation and plume expansion dynamics: a numerical simulation Type A1 Journal article
  Year 2006 Publication Journal of applied physics Abbreviated Journal J Appl Phys  
  Volume 99 Issue 6 Pages 063304,1-9  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher (down) American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000236464400008 Publication Date 2006-04-06  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-8979; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.068 Times cited 42 Open Access  
  Notes Approved Most recent IF: 2.068; 2006 IF: 2.316  
  Call Number UA @ lucian @ c:irua:56903 Serial 794  
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Author Liu, Y.-X.; Zhang, Q.-Z.; Liu, J.; Song, Y.-H.; Bogaerts, A.; Wang, Y.-N. pdf  doi
openurl 
  Title Effect of bulk electric field reversal on the bounce resonance heating in dual-frequency capacitively coupled electronegative plasmas Type A1 Journal article
  Year 2012 Publication Applied physics letters Abbreviated Journal Appl Phys Lett  
  Volume 101 Issue 11 Pages 114101  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract The electron bounce resonance heating (BRH) in dual-frequency capacitively coupled plasmas operated in oxygen and argon has been studied by different experimental methods. In comparison with the electropositive argon discharge, the BRH in an electronegative discharge occurs at larger electrode gaps. Kinetic particle simulations reveal that in the oxygen discharge, the bulk electric field becomes quite strong and is out of phase with the sheath field. Therefore, it retards the resonant electrons when traversing the bulk, resulting in a suppressed BRH. This effect becomes more pronounced at lower high-frequency power, when the discharge mode changes from electropositive to electronegative.  
  Address  
  Corporate Author Thesis  
  Publisher (down) American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000309329300094 Publication Date 2012-09-10  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.411 Times cited 26 Open Access  
  Notes Approved Most recent IF: 3.411; 2012 IF: 3.794  
  Call Number UA @ lucian @ c:irua:100637 Serial 802  
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Author Neek-Amal, M.; Peeters, F.M. url  doi
openurl 
  Title Effect of grain boundary on the buckling of graphene nanoribbons Type A1 Journal article
  Year 2012 Publication Applied physics letters Abbreviated Journal Appl Phys Lett  
  Volume 100 Issue 10 Pages 101905-101905,4  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract The buckling of graphene nano-ribbons containing a grain boundary is studied using atomistic simulations where free and supported boundary conditions are invoked. We consider the buckling transition of two kinds of grain boundaries with special symmetry. When graphene contains a large angle grain boundary with theta = 21.8 degrees, the buckling strains are larger than those of perfect graphene when the ribbons with free (supported) boundary condition are subjected to compressive tension parallel (perpendicular) to the grain boundary. This is opposite for the results of theta = 32.2 degrees. The shape of the deformations of the buckled graphene nanoribbons depends on the boundary conditions, the presence of the particular used grain boundaries, and the direction of applied in-plane compressive tension. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3692573]  
  Address  
  Corporate Author Thesis  
  Publisher (down) American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000301655500021 Publication Date 2012-03-06  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.411 Times cited 18 Open Access  
  Notes ; This work was supported by the Flemish Science Foundation (FWO-Vl) and the Belgian Science Policy (IAP). ; Approved Most recent IF: 3.411; 2012 IF: 3.794  
  Call Number UA @ lucian @ c:irua:97794 Serial 809  
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Author Comrie, C.M.; Ahmed, A.; Smeets, D.; Demeulemeester, J.; Turner, S.; Van Tendeloo, G.; Detavernier, C.; Vantomme, A. pdf  doi
openurl 
  Title Effect of high temperature deposition on CoSi2 phase formation Type A1 Journal article
  Year 2013 Publication Journal of applied physics Abbreviated Journal J Appl Phys  
  Volume 113 Issue 23 Pages 234902-234908  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract This paper discusses the nucleation behaviour of the CoSi to CoSi2 transformation from cobalt silicide thin films grown by deposition at elevated substrate temperatures ranging from 375 °C to 600 °C. A combination of channelling, real-time Rutherford backscattering spectrometry, real-time x-ray diffraction, and transmission electron microscopy was used to investigate the effect of the deposition temperature on the subsequent formation temperature of CoSi2, its growth behaviour, and the epitaxial quality of the CoSi2 thus formed. The temperature at which deposition took place was observed to exert a significant and systematic influence on both the formation temperature of CoSi2 and its growth mechanism. CoSi films grown at the lowest temperatures were found to increase the CoSi2 nucleation temperature above that of CoSi2 grown by conventional solid phase reaction, whereas the higher deposition temperatures reduced the nucleation temperature significantly. In addition, a systematic change in growth mechanism of the subsequent CoSi2 growth occurs as a function of deposition temperature. First, the CoSi2 growth rate from films grown at the lower reactive deposition temperatures is substantially lower than that grown at higher reactive deposition temperatures, even though the onset of growth occurs at a higher temperature, Second, for deposition temperatures below 450 °C, the growth appears columnar, indicating nucleation controlled growth. Elevated deposition temperatures, on the other hand, render the CoSi2 formation process layer-by-layer which indicates enhanced nucleation of the CoSi2 and diffusion controlled growth. Our results further indicate that this observed trend is most likely related to stress and changes in microstructure introduced during reactive deposition of the CoSi film. The deposition temperature therefore provides a handle to tune the CoSi2 growth mechanism.  
  Address  
  Corporate Author Thesis  
  Publisher (down) American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000321011700077 Publication Date 2013-06-17  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-8979; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.068 Times cited 2 Open Access  
  Notes Fwo; Countatoms Approved Most recent IF: 2.068; 2013 IF: 2.185  
  Call Number UA @ lucian @ c:irua:109266 Serial 815  
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Author Neyts, E.; Bogaerts, A.; van de Sanden, M.C.M. doi  openurl
  Title Effect of hydrogen on the growth of thin hydrogenated amorphous carbon films from thermal energy radicals Type A1 Journal article
  Year 2006 Publication Applied physics letters Abbreviated Journal Appl Phys Lett  
  Volume 88 Issue Pages 141922  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher (down) American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000236612000037 Publication Date 2006-04-06  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.411 Times cited 35 Open Access  
  Notes Approved Most recent IF: 3.411; 2006 IF: 3.977  
  Call Number UA @ lucian @ c:irua:57642 Serial 817  
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Author Bogaerts, A.; Gijbels, R. url  doi
openurl 
  Title Effect of small amounts of hydrogen added to argon glow discharges: hybrid Monte-Carlo-fluid model Type A1 Journal article
  Year 2002 Publication Physical review : E : statistical, nonlinear, and soft matter physics Abbreviated Journal Phys Rev E  
  Volume 65 Issue Pages 056402  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract A hybrid Monte Carlofluid modeling network is developed for an argon-hydrogen mixture, to predict the effect of small amounts of hydrogen added to a dc argon glow discharge. The species considered in the model include the Ar gas atoms, electrons, Ar+ ions and fast Ar atoms, ArH+, H+, H+2 and H+3 ions, and H atoms and H2 molecules, as well as Ar metastable atoms, sputtered Cu atoms, and the corresponding Cu+ ions. Sixty-five reactions between these species are incorporated in the model. The effect of hydrogen on various calculation results is investigated, such as the species densities, the relative role of different production and loss processes for the various species, the cathode sputtering rate and contributions by different bombarding species, and the dissociation degree of H2 and the ionization degree of Ar and Cu. The calculation results are presented and discussed for 1% H2 addition, and comparison is also made with a pure argon discharge and with only 0.1% H2 addition.  
  Address  
  Corporate Author Thesis  
  Publisher (down) American Institute of Physics Place of Publication Woodbury (NY) Editor  
  Language Wos 000176552500086 Publication Date 2002-07-27  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1063-651X;1095-3787; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.366 Times cited 33 Open Access  
  Notes Approved Most recent IF: 2.366; 2002 IF: 2.397  
  Call Number UA @ lucian @ c:irua:40183 Serial 835  
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Author Hezareh, T.; Razavi, F.S.; Kremer, R.K.; Habermeier, H.-U.; Lebedev, O.I.; Kirilenko, D.; Van Tendeloo, G. pdf  doi
openurl 
  Title Effect of PbZr0.52Ti0.48O3 thin layer on structure, electronic and magnetic properties of La0.65Sr0.35MnO3 and La0.65Ca0.30MnO3 thin-films Type A1 Journal article
  Year 2011 Publication Journal of applied physics Abbreviated Journal J Appl Phys  
  Volume 109 Issue 11 Pages 113707,1-113707,8  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Epitaxial thin film heterostructures of high dielectric PbZr<sub>1-x</sub>Ti<sub>x</sub>O<sub>3</sub> (PZT) and La<sub>1-x</sub>A<sub>x</sub>MnO<sub>3</sub> (A-divalent alkaline earth metals such as Sr (LSMO) and Ca (LCMO)) were grown on SrTiO<sub>3</sub> substrates and their structure, temperature dependence of electrical resistivity, and magnetization were investigated as a function of the thickness of the LSMO(LCMO) layer. The microstructures of the samples were analyzed by TEM. By applying an electric field across the PZT layer, we applied a ferrodistortive pressure on the manganite layer and studied the correlations between lattice distortion and electric transport and magnetic properties of the CMR materials.  
  Address  
  Corporate Author Thesis  
  Publisher (down) American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000292214700069 Publication Date 2011-06-06  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-8979; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.068 Times cited 4 Open Access  
  Notes Approved Most recent IF: 2.068; 2011 IF: 2.168  
  Call Number UA @ lucian @ c:irua:90964 Serial 843  
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Author Zhao, S.-X.; Gao, F.; Wang, Y.-P.; Wang, Y.-N.; Bogaerts, A. pdf  url
doi  openurl
  Title Effects of feedstock availability on the negative ion behavior in a C4F8 inductively coupled plasma Type A1 Journal article
  Year 2015 Publication Journal of applied physics Abbreviated Journal J Appl Phys  
  Volume 118 Issue 118 Pages 033301  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract In this paper, the negative ion behavior in a C4F8 inductively coupled plasma (ICP) is investigated using a hybrid model. The model predicts a non-monotonic variation of the total negative ion density with power at low pressure (1030 mTorr), and this trend agrees well with experiments that were carried out in many fluorocarbon (fc) ICP sources, like C2F6, CHF3, and C4F8. This behavior is explained by the availability of feedstock C4F8 gas as a source of the negative ions, as well as by the presence of low energy electrons due to vibrational excitation at low power. The maximum of the negative ion density shifts to low power values upon decreasing pressure, because of the more pronounced depletion of C4F8 molecules, and at high pressure (∼50 mTorr), the anion density continuously increases with power, which is similar to fc CCP sources. Furthermore, the negative ion composition is identified in this paper. Our work demonstrates that for a clear understanding of the negative ion behavior in radio frequency C4F8 plasma sources, one needs to take into account many factors, like the attachment characteristics, the anion composition, the spatial profiles, and the reactor configuration. Finally, a detailed comparison of our simulation results with experiments is conducted.  
  Address  
  Corporate Author Thesis  
  Publisher (down) American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000358429200004 Publication Date 2015-07-20  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-8979;1089-7550; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.068 Times cited 1 Open Access  
  Notes Approved Most recent IF: 2.068; 2015 IF: 2.183  
  Call Number c:irua:126735 Serial 861  
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Author Ao, Z.M.; Peeters, F.M. doi  openurl
  Title Electric field: A catalyst for hydrogenation of graphene Type A1 Journal article
  Year 2010 Publication Applied physics letters Abbreviated Journal Appl Phys Lett  
  Volume 96 Issue 25 Pages 3  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract Due to the importance of hydrogenation of graphene for several applications, we present an alternative approach to hydrogenate graphene based on density functional theory calculations. We find that a negative perpendicular electric field F can act as a catalyst to reduce the energy barrier for molecular H<sub>2</sub> dissociative adsorption on graphene. Increasing -F above 0.02 a.u. (1 a.u.=5.14×10<sup>11</sup> V/m), this hydrogenation process occurs smoothly without any potential barrier.  
  Address  
  Corporate Author Thesis  
  Publisher (down) American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000279168100052 Publication Date 2010-06-23  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.411 Times cited 88 Open Access  
  Notes ; This work was supported by the Flemish Science Foundation (FWO-Vl) and the Belgian Science Policy (IAP). ; Approved Most recent IF: 3.411; 2010 IF: 3.841  
  Call Number UA @ lucian @ c:irua:83924 Serial 881  
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Author Halley, D.; Majjad, H.; Bowen, M.; Najjari, N.; Henry, Y.; Ulhaq-Bouillet, C.; Weber, W.; Bertoni, G.; Verbeeck, J.; Van Tendeloo, G. doi  openurl
  Title Electrical switching in Fe/Cr/MgO/Fe magnetic tunnel junctions Type A1 Journal article
  Year 2008 Publication Applied physics letters Abbreviated Journal Appl Phys Lett  
  Volume 92 Issue 21 Pages 212115,1-3  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Hysteretic resistance switching is observed in epitaxial Fe/Cr/MgO/Fe magnetic tunnel junctions under bias voltage cycling between negative and positive values of about 1 V. The junctions switch back and forth between high- and low-resistance states, both of which depend on the device bias history. A linear dependence is found between the magnitude of the tunnel magnetoresistance and the crafted resistance of the junctions. To explain these results, a model is proposed that considers electron transport both by elastic tunneling and by defect-assisted transmission. (c) 2008 American Institute of Physics.  
  Address  
  Corporate Author Thesis  
  Publisher (down) American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000256303500042 Publication Date 2008-06-02  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.411 Times cited 33 Open Access  
  Notes Approved Most recent IF: 3.411; 2008 IF: 3.726  
  Call Number UA @ lucian @ c:irua:69284UA @ admin @ c:irua:69284 Serial 894  
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Author Okhrimovskyy, A.; Bogaerts, A.; Gijbels, R. url  doi
openurl 
  Title Electron anisotropic scattering in gases: a formula for Monte Carlo simulations Type A1 Journal article
  Year 2002 Publication Physical review : E : statistical, nonlinear, and soft matter physics Abbreviated Journal Phys Rev E  
  Volume 65 Issue Pages 037402  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract The purpose of this Brief Report is to point out the mistake in a formula for anisotropic electron scattering, previously published in Phys. Rev. A 41, 1112 (1990), which is widely used in Monte Carlo models of gas discharges. Anisotropic electron scattering is investigated based on the screened Coulomb potential between electrons and neutral atoms. The approach is also applied for electron scattering by nonpolar neutral molecules. Differential cross sections for electron scattering by Ar, N2, and CH4 are constructed on the basis of momentum and integrated cross sections. The formula derived in this paper is useful for Monte Carlo simulations of gas discharges.  
  Address  
  Corporate Author Thesis  
  Publisher (down) American Institute of Physics Place of Publication Woodbury (NY) Editor  
  Language Wos 000174549000088 Publication Date 2002-07-27  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1063-651X;1095-3787; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.366 Times cited 57 Open Access  
  Notes Approved Most recent IF: 2.366; 2002 IF: 2.397  
  Call Number UA @ lucian @ c:irua:40179 Serial 909  
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Author Kaganovich, I.; Misina, M.; Berezhnoi, S.; Gijbels, R. url  doi
openurl 
  Title Electron Boltzmann kinetic equation averaged over fast electron bouncing and pitch-angle scattering for fast modeling of electron cyclotron resonance discharge Type A1 Journal article
  Year 2000 Publication Physical review : E : statistical, nonlinear, and soft matter physics Abbreviated Journal Phys Rev E  
  Volume 61 Issue 2 Pages 1875-1889  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract The electron distribution function (EDF) in an electron cyclotron resonance (ECR) discharge is far from Maxwellian. The self-consistent simulation of ECR discharges requires a calculation of the EDF on every magnetic line for various ion density profiles. The straightforward self-consistent simulation of ECR discharges using the Monte Carlo technique for the EDF calculation is very computer time expensive, since the electron and ion time scales are very different. An electron Boltzmann kinetic equation averaged over the fast electron bouncing and pitch-angle scattering was derived in order to develop an effective and operative tool for the fast modeling (FM) of low-pressure ECR discharges. An analytical solution for the EDF in a loss cone was derived. To check the validity of the FM, one-dimensional (in coordinate) and two-dimensional (in velocity) Monte Carlo simulation codes were developed. The validity of the fast modeling method is proved by comparison with the Monte Carlo simulations. The complete system of equations for FM is presented and ready for use in a comprehensive study of ECR discharges. The variations of plasma density and of wall and sheath potentials are analyzed by solving a self-consistent set of equations for the EDF.  
  Address  
  Corporate Author Thesis  
  Publisher (down) American Institute of Physics Place of Publication Woodbury (NY) Editor  
  Language Wos 000085410600117 Publication Date 2002-07-27  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1063-651X;1095-3787; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.366 Times cited 31 Open Access  
  Notes Approved Most recent IF: 2.366; 2000 IF: 2.142  
  Call Number UA @ lucian @ c:irua:34069 Serial 910  
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Author Kálna, K.; Mo×ko, M.; Peeters, F.M. openurl 
  Title Electron capture in GaAs quantum wells via electron-electron and optic phonon scattering Type A1 Journal article
  Year 1996 Publication Applied physics letters Abbreviated Journal Appl Phys Lett  
  Volume 68 Issue Pages 117-119  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher (down) American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos A1996TM84700040 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; 1077-3118 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.302 Times cited 10 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:15802 Serial 912  
Permanent link to this record
 

 
Author Verbeeck, J.; Lebedev, O.I.; Van Tendeloo, G.; Silcox, J.; Mercey, B.; Hervieu, M.; Haghiri-Gosnet, A.M. pdf  doi
openurl 
  Title Electron energy-loss spectroscopy study of a (LaMnO3)8(SrMnO3)4 heterostructure Type A1 Journal article
  Year 2001 Publication Applied physics letters Abbreviated Journal Appl Phys Lett  
  Volume 79 Issue 13 Pages 2037-2039  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract An epitaxially grown heterostructure consisting of alternating layers of LaMnO3 (8 unit cells) and SrMnO3 (4 unit cells) on a SrTiO3 substrate has been studied by a combination of electron energy-loss spectroscopy (EELS) and high-resolution transmission electron microscopy (HRTEM) on an atomic scale. Excitation edges of all elements are captured with subnanometer spatial accuracy, and parametrized to obtain chemical profiles. The fine-edge structure of O K and Mn L-2,L-3 edges are interpreted as signatures of the local electronic structure and show a spatial modulation of the concentration of holes with O 2p character. The chemical concentration is found to be different for the bottom and top interface of a SrMnO3 layer. HRTEM complements the EELS results and confirms the asymmetry of the interfaces. (C) 2001 American Institute of Physics.  
  Address  
  Corporate Author Thesis  
  Publisher (down) American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000171015200036 Publication Date 2002-07-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.411 Times cited 19 Open Access  
  Notes Approved Most recent IF: 3.411; 2001 IF: 3.849  
  Call Number UA @ lucian @ c:irua:54799UA @ admin @ c:irua:54799 Serial 933  
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Author Houssa, M.; Scalise, E.; Sankaran, K.; Pourtois, G.; Afanas'ev, V.V.; Stesmans, A. doi  openurl
  Title Electronic properties of hydrogenated silicene and germanene Type A1 Journal article
  Year 2011 Publication Applied physics letters Abbreviated Journal Appl Phys Lett  
  Volume 98 Issue 22 Pages 223107  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract The electronic properties of hydrogenated silicene and germanene, so called silicane and germanane, respectively, are investigated using first-principles calculations based on density functional theory. Two different atomic configurations are found to be stable and energetically degenerate. Upon the adsorption of hydrogen, an energy gap opens in silicene and germanene. Their energy gaps are next computed using the HSE hybrid functional as well as the G(0)W(0) many-body perturbation method. These materials are found to be wide band-gap semiconductors, the type of gap in silicane (direct or indirect) depending on its atomic configuration. Germanane is predicted to be a direct-gap material, independent of its atomic configuration, with an average energy gap of about 3.2 eV, this material thus being potentially interesting for optoelectronic applications in the blue/violet spectral range. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3595682]  
  Address  
  Corporate Author Thesis  
  Publisher (down) American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000291405700057 Publication Date 2011-06-03  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.411 Times cited 63 Open Access  
  Notes Approved Most recent IF: 3.411; 2011 IF: 3.844  
  Call Number UA @ lucian @ c:irua:105586 Serial 1003  
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Author Houssa, M.; Pourtois, G.; Afanas'ev, V.V.; Stesmans, A. doi  openurl
  Title Electronic properties of two-dimensional hexagonal germanium Type A1 Journal article
  Year 2010 Publication Applied physics letters Abbreviated Journal Appl Phys Lett  
  Volume 96 Issue 8 Pages 082111,1-082111,3  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract The electronic properties of two-dimensional hexagonal germanium, so called germanene, are investigated using first-principles simulations. Consistent with previous reports, the surface is predicted to have a poor metallic behavior, i.e., being metallic with a low density of states at the Fermi level. It is found that biaxial compressively strained germanene is a gapless semiconductor with linear energy dispersions near the K pointslike graphene. The calculated Fermi velocity of germanene is almost independent of the strain and is about 1.7×10<sup>6</sup> m/s, quite comparable to the value in graphene.  
  Address  
  Corporate Author Thesis  
  Publisher (down) American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000275027200044 Publication Date 2010-02-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.411 Times cited 86 Open Access  
  Notes Approved Most recent IF: 3.411; 2010 IF: 3.841  
  Call Number UA @ lucian @ c:irua:91716 Serial 1004  
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Author Yusupov, M.; Bultinck, E.; Depla, D.; Bogaerts, A. doi  openurl
  Title Elucidating the asymmetric behavior of the discharge in a dual magnetron sputter deposition system Type A1 Journal article
  Year 2011 Publication Applied physics letters Abbreviated Journal Appl Phys Lett  
  Volume 98 Issue 13 Pages 131502-131502,3  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract A magnetron discharge is characterized by drifts of the charged particles guiding center, caused by the magnetic field, in contrast to unmagnetized discharges. Because of these drifts, a pronounced asymmetry of the discharge can be observed in a dual magnetron setup. In this work, it is found that the shape of the discharge in a dual magnetron configuration depends on the magnetic field configuration. In a closed configuration, strong drifts were observed in one preferential direction, whereas in a mirror configuration the deflection of the discharge was not so pronounced. Our calculations confirm experimental observations.  
  Address  
  Corporate Author Thesis  
  Publisher (down) American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000289153600017 Publication Date 2011-04-01  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.411 Times cited 4 Open Access  
  Notes Approved Most recent IF: 3.411; 2011 IF: 3.844  
  Call Number UA @ lucian @ c:irua:87867 Serial 1026  
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Author Ao, Z.M.; Hernández-Nieves, A.D.; Peeters, F.M.; Li, S. doi  openurl
  Title Enhanced stability of hydrogen atoms at the graphene/graphane interface of nanoribbons Type A1 Journal article
  Year 2010 Publication Applied physics letters Abbreviated Journal Appl Phys Lett  
  Volume 97 Issue 23 Pages 233109,1-233109,3  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract The thermal stability of graphene/graphane nanoribbons (GGNRs) is investigated using density functional theory. It is found that the energy barriers for the diffusion of hydrogen atoms on the zigzag and armchair interfaces of GGNRs are 2.86 and 3.17 eV, respectively, while the diffusion barrier of an isolated H atom on pristine graphene was only ∼ 0.3 eV. These results unambiguously demonstrate that the thermal stability of GGNRs can be enhanced significantly by increasing the hydrogen diffusion barriers through graphene/graphane interface engineering. This may provide new insights for viable applications of GGNRs.  
  Address  
  Corporate Author Thesis  
  Publisher (down) American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000285364000067 Publication Date 2010-12-11  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.411 Times cited 43 Open Access  
  Notes ; The financial supports by the Vice-Chancellor's Postdoctoral Research Fellowship Program of the University of New South Wales (SIR50/PS19184), the Flemish Science Foundation (FWO-VI), and the Belgian Science Policy (IAP) are acknowledged. A.D.H. acknowledges also support from ANPCyT (Grant No. PICT2008-2236) and the collaborative project FWO-MINCyT (FW/08/01). ; Approved Most recent IF: 3.411; 2010 IF: 3.841  
  Call Number UA @ lucian @ c:irua:86972 Serial 1056  
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Author Malakho, A.; Fargin, E.; Lahaye, M.; Lazoryak, B.; Morozov, V.; Van Tendeloo, G.; Rodriguez, V.; Adamietz, F. doi  openurl
  Title Enhancement of second harmonic generation signal in thermally poled glass ceramic with NaNbO3 nanocrystals Type A1 Journal article
  Year 2006 Publication Journal of applied physics Abbreviated Journal J Appl Phys  
  Volume 100 Issue 6 Pages 063103,1-5  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Glass ceramic composites were prepared by bulk crystallization of NaNbO3 in sodium niobium borate glasses. A homogeneous bulk crystallization of the NaNbO3 phase takes place during heat treatments that produces visible-near infrared transparent materials with similar to 30 nm NaNbO3 nanocrystallites. Upon thermal poling, a strong Na+ depleted nonlinear optical thin layer is observed at the anode side that should induce a large internal static electric field. In addition, the chi((2)) response of the poled glass ceramic composites increases from 0.2 up to 1.9 pm/V with the rate of crystallization. Two mechanisms may be considered: a pure structural chi((2)) process connected with the occurrence of a spontaneous ferroelectric polarization or an increase of the chi((3)) response of the nanocrystallites that enhances the electric field induced second harmonic generation process. (c) 2006 American Institute of Physics.  
  Address  
  Corporate Author Thesis  
  Publisher (down) American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000240876600003 Publication Date 2006-10-03  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-8979; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.068 Times cited 13 Open Access  
  Notes Approved Most recent IF: 2.068; 2006 IF: 2.316  
  Call Number UA @ lucian @ c:irua:61005 Serial 1063  
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Author Razavi, F.S.; Gross, G.; Habermeier, H.-U.; Lebedev, O.; Amelinckx, S.; Van Tendeloo, G.; Vigliante, A. pdf  doi
openurl 
  Title Epitaxial strain induced metal insulator transition in La0.9Sr0.1MnO3 and La0.88Sr0.1MnO3 thin films Type A1 Journal article
  Year 2000 Publication Applied physics letters Abbreviated Journal Appl Phys Lett  
  Volume 76 Issue 2 Pages 155-157  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract We are reporting an unexpected metal insulator transition at the ferromagnetic phase-transition temperature for thin films of La0.9Sr0.1MnO3 (< 50 nm), grown on a (100) face of SrTiO3 substrate. For the thicker films (> 50 nm), similar to the single crystal, no such transition is observed below T-C. Additionally, we observe the suppression of the features associated with charge or orbital ordering in intentionally La-deficient thin films of La0.88Sr0.1MnO3 (< 75 nm). In thin films, transmission electron microscopy reveals a compressive strain due to the epitaxial growth, that is, lattice parameters adopt those of the cubic lattice of SrTiO3. As the film thickness increases, coherent microtwinning is observed in the films and the films relax to a orthorhombic structure. (C) 2000 American Institute of Physics. [S0003-6951(00)00402-2].  
  Address  
  Corporate Author Thesis  
  Publisher (down) American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000084541000009 Publication Date 2002-07-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.411 Times cited 91 Open Access  
  Notes Approved Most recent IF: 3.411; 2000 IF: 3.906  
  Call Number UA @ lucian @ c:irua:99441 Serial 1073  
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Author Vandenberghe, W.G.; Verhulst, A.S.; Sorée, B.; Magnus, W.; Groeseneken, G.; Smets, Q.; Heyns, M.; Fischetti, M.V. pdf  doi
openurl 
  Title Figure of merit for and identification of sub-60 mV/decade devices Type A1 Journal article
  Year 2013 Publication Applied physics letters Abbreviated Journal Appl Phys Lett  
  Volume 102 Issue 1 Pages 013510-13514  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract A figure of merit I60 is proposed for sub-60 mV/decade devices as the highest current where the input characteristics exhibit a transition from sub- to super-60 mV/decade behavior. For sub-60 mV/decade devices to be competitive with metal-oxide-semiconductor field-effect devices, I60 has to be in the 1-10 μA/μm range. The best experimental tunnel field-effect transistors (TFETs) in the literature only have an I60 of 6×10-3 μA/μm but using theoretical simulations, we show that an I60 of up to 10 μA/μm should be attainable. It is proven that the Schottky barrier FET (SBFET) has a 60 mV/decade subthreshold swing limit while combining a SBFET and a TFET does improve performance.  
  Address  
  Corporate Author Thesis  
  Publisher (down) American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000313646500132 Publication Date 2013-01-12  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.411 Times cited 64 Open Access  
  Notes ; William G. Vandenberghe gratefully acknowledges the support of a Ph.D. stipend from IWT-Vlaanderen. The authors thank Danielle Leonelli, Lars-Ake Ragnarsson, and Krishna Bhuwalka for useful discussions. This work was supported by imec's Industrial Affiliation Program. ; Approved Most recent IF: 3.411; 2013 IF: 3.515  
  Call Number UA @ lucian @ c:irua:109262 Serial 1192  
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Author Schowalter, M.; Lamoen, D.; Kruse, P.; Gerthsen, D.; Rosenauer, A. doi  openurl
  Title First-principles calculations of the mean inner Coulomb potential for sphalerite type II.VI semiconductors Type A1 Journal article
  Year 2004 Publication Applied Physics Letters Abbreviated Journal Appl Phys Lett  
  Volume 85 Issue 21 Pages 4938-4940  
  Keywords A1 Journal article; Electron Microscopy for Materials Science (EMAT);  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher (down) American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000225300600037 Publication Date 2004-11-24  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.411 Times cited 16 Open Access  
  Notes Approved Most recent IF: 3.411; 2004 IF: 4.308  
  Call Number UA @ lucian @ c:irua:49657 Serial 1203  
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Author Sankaran, K.; Pourtois, G.; Degraeve, R.; Zahid, M.B.; Rignanese, G.-M.; Van Houdt, J. doi  openurl
  Title First-principles modeling of intrinsic and extrinsic defects in \gamma-Al2O3 Type A1 Journal article
  Year 2010 Publication Applied physics letters Abbreviated Journal Appl Phys Lett  
  Volume 97 Issue 21 Pages 212906  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract The electronic properties of a set of intrinsic and extrinsic point defects in gamma-Al2O3 are investigated using quasiparticle calculations within the G(0)W(0) approximation. We find that the electronic signature of atomic vacancies lie deep in the band gap, close to the top of the valence band edge. The introduction of C, Si, and N impurities induces defective levels that are located close to the conduction band edge and near the middle of the band gap of the oxide. The comparison with electrical measurements reveals that the energy levels of some of these defects match with the electronic fingerprint of the defects reported in gamma-Al2O3 based nonvolatile memories. (C) 2010 American Institute of Physics. [doi:10.1063/1.3507385]  
  Address  
  Corporate Author Thesis  
  Publisher (down) American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000284618300039 Publication Date 2010-11-24  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.411 Times cited 12 Open Access  
  Notes Approved Most recent IF: 3.411; 2010 IF: 3.841  
  Call Number UA @ lucian @ c:irua:105617 Serial 1213  
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Author Clima, S.; Chen, Y.Y.; Degraeve, R.; Mees, M.; Sankaran, K.; Govoreanu, B.; Jurczak, M.; De Gendt, S.; Pourtois, G. doi  openurl
  Title First-principles simulation of oxygen diffusion in HfOx : role in the resistive switching mechanism Type A1 Journal article
  Year 2012 Publication Applied physics letters Abbreviated Journal Appl Phys Lett  
  Volume 100 Issue 13 Pages 133102-133102,4  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract Transition metal oxide-based resistor random access memory (RRAM) takes advantage of oxygen-related defects in its principle of operation. Since the change in resistivity of the material is controlled by the oxygen deficiency level, it is of major importance to quantify the kinetics of the oxygen diffusion, key factor for oxide stoichiometry. Ab initio accelerated molecular dynamics techniques are employed to investigate the oxygen diffusivity in amorphous hafnia (HfOx, x = 1.97, 1.0, 0.5). The computed kinetics is in agreement with experimental measurements. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3697690]  
  Address  
  Corporate Author Thesis  
  Publisher (down) American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000302230800060 Publication Date 2012-03-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.411 Times cited 63 Open Access  
  Notes Approved Most recent IF: 3.411; 2012 IF: 3.794  
  Call Number UA @ lucian @ c:irua:97786 Serial 1214  
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Author Bekaert, J.; Saniz, R.; Partoens, B.; Lamoen, D. pdf  url
doi  openurl
  Title First-principles study of carbon impurities in CuInSe2 and CuGaSe2, present in non-vacuum synthesis methods Type A1 Journal article
  Year 2015 Publication Journal of applied physics Abbreviated Journal J Appl Phys  
  Volume 117 Issue 117 Pages 015104  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT)  
  Abstract A first-principles study of the structural and electronic properties of carbon impurities in CuInSe2 and CuGaSe2 is presented. Carbon is present in organic molecules in the precursor solutions used in non-vacuum growth methods for CuInSe2 and CuGaSe2 based photovoltaic cells. These growth methods make more efficient use of material, time, and energy than traditional vacuum methods. The formation energies of several carbon impurities are calculated using the hybrid HSE06 functional. C Cu acts as a shallow donor, CIn and interstitial C yield deep donor levels in CuInSe2, while in CuGaSe2 CGa and interstitial C act as deep amphoteric defects. So, these defects reduce the majority carrier (hole) concentration in p-type CuInSe2 and CuGaSe2 by compensating the acceptor levels. The deep defects are likely to act as recombination centers for the photogenerated charge carriers and are thus detrimental for the performance of the photovoltaic cells. On the other hand, the formation energies of the carbon impurities are high, even under C-rich growth conditions. Thus, few C impurities will form in CuInSe2 and CuGaSe2 in thermodynamic equilibrium. However, the deposition of the precursor solution in non-vacuum growth methods presents conditions far from thermodynamic equilibrium. In this case, our calculations show that C impurities formed in non-equilibrium tend to segregate from CuInSe2 and CuGaSe2 by approaching thermodynamic equilibrium, e.g., via thorough annealing.  
  Address  
  Corporate Author Thesis  
  Publisher (down) American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000347958600055 Publication Date 2015-01-07  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-8979;1089-7550; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.068 Times cited 6 Open Access  
  Notes FWO G015013; Hercules Approved Most recent IF: 2.068; 2015 IF: 2.183  
  Call Number c:irua:122064 Serial 1215  
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Author Du, G.H.; Xu, F.; Yuan, Z.Y.; Van Tendeloo, G. pdf  doi
openurl 
  Title Flowerlike ZnO nanocones and nanowires: preparation, structure, and luminescence Type A1 Journal article
  Year 2006 Publication Applied physics letters Abbreviated Journal Appl Phys Lett  
  Volume 88 Issue 24 Pages 243101,1-3  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher (down) American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000238314800074 Publication Date 2006-06-12  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.411 Times cited 76 Open Access  
  Notes Iap-V Approved Most recent IF: 3.411; 2006 IF: 3.977  
  Call Number UA @ lucian @ c:irua:60057 Serial 1225  
Permanent link to this record
 

 
Author Milošević, M.V.; Berdiyorov, G.R.; Peeters, F.M. url  doi
openurl 
  Title Fluxonic cellular automata Type A1 Journal article
  Year 2007 Publication Applied physics letters Abbreviated Journal Appl Phys Lett  
  Volume 91 Issue 21 Pages 212501,1-3  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher (down) American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000251105500023 Publication Date 2007-11-19  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.411 Times cited 45 Open Access  
  Notes Approved Most recent IF: 3.411; 2007 IF: 3.596  
  Call Number UA @ lucian @ c:irua:67176 Serial 1245  
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