“Hexagonal A1N : dimensional-crossover-driven band-gap transition”. Bacaksiz C, Sahin H, Ozaydin HD, Horzum S, Senger RT, Peeters FM, Physical review : B : condensed matter and materials physics 91, 085430 (2015). http://doi.org/10.1103/PhysRevB.91.085430
Abstract: Motivated by a recent experiment that reported the successful synthesis of hexagonal (h) AlN [Tsipas et al., Appl. Phys. Lett. 103, 251605 (2013)], we investigate structural, electronic, and vibrational properties of bulk, bilayer, and monolayer structures of h-AlN by using first-principles calculations. We show that the hexagonal phase of the bulk h-AlN is a stable direct-band-gap semiconductor. The calculated phonon spectrum displays a rigid-layer shear mode at 274 cm(-1) and an E-g mode at 703 cm(-1), which are observable by Raman measurements. In addition, single-layer h-AlN is an indirect-band-gap semiconductor with a nonmagnetic ground state. For the bilayer structure, AA'-type stacking is found to be the most favorable one, and interlayer interaction is strong. While N-layered h-AlN is an indirect-band-gap semiconductor for N = 1 – 9, we predict that thicker structures (N >= 10) have a direct band gap at the Gamma point. The number-of-layer-dependent band-gap transitions in h-AlN is interesting in that it is significantly different from the indirect-to-direct crossover obtained in the transition-metal dichalcogenides.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 99
DOI: 10.1103/PhysRevB.91.085430
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“High-capacity hydrogen storage in Al-adsorbed graphene”. Ao ZM, Peeters FM, Physical review : B : condensed matter and materials physics 81, 205406 (2010). http://doi.org/10.1103/PhysRevB.81.205406
Abstract: A high-capacity hydrogen storage mediumAl-adsorbed grapheneis proposed based on density-functional theory calculations. We find that a graphene layer with Al adsorbed on both sides can store hydrogen up to 13.79 wt % with average adsorption energy −0.193 eV/H2. Its hydrogen storage capacity is in excess of 6 wt %, surpassing U. S. Department of Energy (DOEs) target. Based on the binding-energy criterion and molecular-dynamics calculations, we find that hydrogen storage can be recycled at near ambient conditions. This high-capacity hydrogen storage is due to the adsorbed Al atoms that act as bridges to link the electron clouds of the H2 molecules and the graphene layer. As a consequence, a two-layer arrangement of H2 molecules is formed on each side of the Al-adsorbed graphene layer. The H2 concentration in the hydrogen storage medium can be measured by the change in the conductivity of the graphene layer.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 219
DOI: 10.1103/PhysRevB.81.205406
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“High-field magnetoexcitons in unstrained GaAs/AlxGa1-xAs quantum dots”. Sidor Y, Partoens B, Peeters FM, Schildermans N, Hayne M, Moshchalkov VV, Rastelli A, Schmidt OG, Physical review : B : condensed matter and materials physics 73, 155334 (2006). http://doi.org/10.1103/PhysRevB.73.155334
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 50
DOI: 10.1103/PhysRevB.73.155334
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“High-field magnetoresistance in GaAs/Ga0.7Al0.3As heterojunctions arising from elastic and inelastic scattering”. Leadley DR, Nicholas RJ, Xu W, Peeters FM, Devreese JT, Singleton J, Perenboom JA, van Bockstal L, Herlach F, Foxon CT, Harris JJ, Physical review : B : condensed matter and materials physics 48, 5457 (1993). http://doi.org/10.1103/PhysRevB.48.5457
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Impact Factor: 3.736
Times cited: 22
DOI: 10.1103/PhysRevB.48.5457
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“High resolution electron tomography”. Bals S, Van Aert S, Van Tendeloo G, Current opinion in solid state and materials science 17, 107 (2013). http://doi.org/10.1016/j.cossms.2013.03.001
Abstract: Reaching atomic resolution in 3D has been the ultimate goal in the field of electron tomography for many years. Significant progress, both on the theoretical as well as the experimental side has recently resulted in several exciting examples demonstrating the ability to visualise atoms in 3D. In this paper, we will review the different steps that have pushed the resolution in 3D to the atomic level. A broad range of methodologies and practical examples together with their impact on materials science will be discussed. Finally, we will provide an outlook and will describe future challenges in the field of high resolution electron tomography.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 6.938
Times cited: 24
DOI: 10.1016/j.cossms.2013.03.001
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“High-temperature conductance of a two-dimensional superlattice controlled by spin-orbit interaction”. Földi P, Szaszkó-Bogár V, Peeters FM, Physical review : B : condensed matter and materials physics 83, 115313 (2011). http://doi.org/10.1103/PhysRevB.83.115313
Abstract: Rashba-type spin-orbit interaction (SOI) controlled band structure of a two-dimensional superlattice allows for the modulation of the conductance of finite size devices by changing the strength of the SOI. We consider rectangular arrays and find that the temperature dependence of the conductance disappears for high temperatures, but the strength of the SOI still affects the conductance at these temperatures. The modulation effect can be seen even in the presence of strong dephasing, which can be important for practical applications.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 8
DOI: 10.1103/PhysRevB.83.115313
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“Hole and exciton energy levels in InP/InxGa1-xP quantum dot molecules: influence of geometry and magnetic field dependence”. Mlinar V, Tadić, M, Peeters FM, Physical review : B : condensed matter and materials physics 73, 235336 (2006). http://doi.org/10.1103/PhysRevB.73.235336
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 16
DOI: 10.1103/PhysRevB.73.235336
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“Hole states in nanocups in a magnetic field”. Čukarić, N, Arsoski V, Tadić, M, Peeters FM, Physical review : B : condensed matter and materials physics 85, 235425 (2012). http://doi.org/10.1103/PhysRevB.85.235425
Abstract: The magnetic-field dependence of the hole states in a nanocup, which is composed of a ring (the nanocup rim) that surrounds a disk (the nanocup bottom), is obtained within the Luttinger-Kohn model for the unstrained GaAs/(Al,Ga) As and the strained (In,Ga) As/GaAs systems. Aharonov-Bohm oscillations due to angular momentum transitions of the hole ground state appear with periods that vary with the thickness of the disk. The strain in the (In, Ga) As/GaAs nanocup is sensitive to the disk thickness and favors the spatial localization of the heavy holes inside the disk. Therefore, the angular momentum transitions between the valence-band states disappear for much thinner disks than in the case of the unstrained GaAs/(Al, Ga) As nanocups. In both systems, the oscillations in the energy of the hole ground state are found to disappear for thinner inner layer than in the electron ground-state energy. This is due to the different confining potentials and the mixing between the heavy- and light-hole states. As a consequence, magnetization of the single hole is found to strongly depend on the bottom thickness of the strained (In, Ga) As/GaAs nanocup. Furthermore, we found that the strain can lead to a spatial separation of the electron and the hole, as in type-II band alignment, which is advantageous for the appearance of the excitonic Aharonov-Bohm effect.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 4
DOI: 10.1103/PhysRevB.85.235425
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“Hole subbands and effective masses in p-doped [113]-grown heterojunctions”. Goldoni G, Peeters FM, Physical review : B : condensed matter and materials physics 51, 17806 (1995). http://doi.org/10.1103/PhysRevB.51.17806
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.736
Times cited: 14
DOI: 10.1103/PhysRevB.51.17806
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“Hollow nanocylinder: multisubband superconductivity induced by quantum confinement”. Chen Y, Shanenko AA, Peeters FM, Physical review : B : condensed matter and materials physics 81, 134523 (2010). http://doi.org/10.1103/PhysRevB.81.134523
Abstract: Quantization of the transverse electron motion in high-quality superconducting metallic nanowires and nanofilms results in the formation of well-distinguished single-electron subbands. They shift in energy with changing thickness, which is known to cause quantum-size superconducting oscillations. The formation of multiple subbands results in a multigap structure induced by the interplay between quantum confinement and Andreev mechanism. We investigate multisubband superconductivity in a hollow nanocylinder by numerically solving the Bogoliubov-de Gennes equations. When changing the inner radius and thickness of the hollow nanocylinder, we find a crossover from an irregular pattern of quantum-size superconducting oscillations, typical of nanowires, to an almost regular regime, specific for superconducting nanofilms. At this crossover the multigap structure becomes degenerate. The ratio of the critical temperature to the energy gap increases and approaches its bulk value while being reduced by 20-30% due to Andreev-type states driven by quantum confinement in the irregular regime.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 21
DOI: 10.1103/PhysRevB.81.134523
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“Homologous series of layered structures in binary and ternary Bi-Sb-Te-Se systems : ab initio study”. Govaerts K, Sluiter MHF, Partoens B, Lamoen D, Physical review : B : condensed matter and materials physics 89, 054106 (2014). http://doi.org/10.1103/PhysRevB.89.054106
Abstract: In order to account explicitly for the existence of long-periodic layered structures and the strong structural relaxations in the most common binary and ternary alloys of the Bi-Sb-Te-Se system, we have developed a one-dimensional cluster expansion (CE) based on first-principles electronic structure calculations, which accounts for the Bi and Sb bilayer formation. Excellent interlayer distances are obtained with a van der Waals density functional. It is shown that a CE solely based on pair interactions is sufficient to provide an accurate description of the ground-state energies of Bi-Sb-Te-Se binary and ternary systems without making the data set of ab initio calculated structures unreasonably large. For the binary alloys A1−xQx (A=Sb, Bi; Q=Te, Se), a ternary CE yields an almost continuous series of (meta)stable structures consisting of consecutive A bilayers next to consecutive A2Q3 for 0<x<0.6. For x>0.6, the binary alloy segregates into pure Q and A2Q3. The Bi-Sb system is described by a quaternary CE and is found to be an ideal solid solution stabilized by entropic effects at T≠0 K but with an ordered structure of alternating Bi and Sb layers for x=0.5 at T=0 K. A quintuple CE is used for the ternary Bi-Sb-Te system, where stable ternary layered compounds with an arbitrary stacking of Sb2Te3, Bi2Te3, and Te-Bi-Te-Sb-Te quintuple units are found, optionally separated by mixed Bi/Sb bilayers. Electronic properties of the stable compounds were studied taking spin-orbit coupling into account.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 5
DOI: 10.1103/PhysRevB.89.054106
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“Impact of Dresselhaus versus Rashba spin-orbit coupling on the Holstein polaron”. Li Z, Covaci L, Marsiglio F, Physical review : B : condensed matter and materials physics 85, 205112 (2012). http://doi.org/10.1103/PhysRevB.85.205112
Abstract: We utilize an exact variational numerical procedure to calculate the ground-state properties of a polaron in the presence of Rashba and linear Dresselhaus spin-orbit coupling. We find that when the linear Dresselhaus spin-orbit coupling approaches the Rashba spin-orbit coupling, the Van Hove singularity in the density of states will be shifted away from the bottom of the band and finally disappear when the two spin-orbit couplings are tuned to be equal. The effective mass will be suppressed; the trend will become more significant for low phonon frequency. The presence of two dominant spin-orbit couplings will make it possible to tune the effective mass with more varied observables.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 18
DOI: 10.1103/PhysRevB.85.205112
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“Impact of spin-orbit coupling on the Holstein polaron”. Li Z, Covaci L, Berciu M, Baillie D, Marsiglio F, Physical review : B : condensed matter and materials physics 83, 195104 (2011). http://doi.org/10.1103/PhysRevB.83.195104
Abstract: We utilize an exact variational numerical procedure to calculate the ground state properties of a polaron in the presence of a Rashba-like spin-orbit interaction. Our results corroborate previous work performed with the momentum average approximation and with weak-coupling perturbation theory. We find that spin-orbit coupling increases the effective mass in the regime with weak electron-phonon coupling, and decreases the effective mass in the regimes of intermediate and strong electron-phonon coupling. Analytical strong-coupling perturbation theory results confirm our numerical results in the small-polaron regime. A large amount of spin-orbit coupling can lead to a significant lowering of the polaron effective mass.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 9
DOI: 10.1103/PhysRevB.83.195104
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“Impurity band and magnetic-field-induced metal-insulator transition in a doped GaAs/AlxGa1-xAs superlattice”. Hilber W, Helm M, Peeters FM, Alavi K, Pathak RN, Physical review : B : condensed matter and materials physics 53, 6919 (1996). http://doi.org/10.1103/PhysRevB.53.6919
Abstract: A combination of infrared spectroscopy and magnetotransport is used to investigate the impurity band and the magnetic-field-induced metal-insulator transition in n-type GaAs/AlxGa1-xAs superlattices. The dropping of the Fermi level from the conduction band into the impurity band upon increasing magnetic field is observed in a sample doped to n=4n(c), where n(c) is the critical density according to the Mott criterion. The metal-insulator transition takes place while the Fermi level is in the impurity band, with no qualitative change from the metallic to the insulating side. Due to the anisotropy of the superlattice band structure, the metal-insulator transition is shifted to higher magnetic field, when the magnetic field is tilted away from the growth axis towards the layer planes.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.736
Times cited: 14
DOI: 10.1103/PhysRevB.53.6919
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“In-plane magnetic-field-induced Wigner crystallization in a two-electron quantum dot”. Szafran B, Peeters FM, Bednarek S, Adamowski J, Physical review : B : condensed matter and materials physics 70, 235335 (2004). http://doi.org/10.1103/PhysRevB.70.235335
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 7
DOI: 10.1103/PhysRevB.70.235335
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“In situ HREM irradiation study of point-defect clustering in MBE-grown strained Si1-xGex/(001)Si structures”. Fedina L, Lebedev OI, Van Tendeloo G, van Landuyt J, Mironov OA, Parker EHC, Physical review : B : condensed matter and materials physics 61, 10336 (2000). http://doi.org/10.1103/PhysRevB.61.10336
Abstract: We present a detailed analysis of the point-defect clustering in strained Si/Si(1-x)Ge(x)/(001)Si structures, including the interaction of the point defects with the strained interfaces and the sample surface during 400 kV electron irradiation at room temperature. Point-defect cluster formation is very sensitive to the type and magnitude of the strain in the Si and Si(1-x)Ge(x) layers. A small compressive strain (-0.3%) in the SiGe alloy causes an aggregation of vacancies in the form of metastable [110]-oriented chains. They are located on {113} planes and further recombine with interstitials. Tensile strain in the Si layer causes an aggregation of interstitial atoms in the forms of additional [110] rows which are inserted on {113} planes with [001]-split configurations. The chainlike configurations are characterized by a large outward lattice relaxation for interstitial rows (0.13 +/-0.01 nm) and a very small inward relaxation for vacancy chains (0.02+/-0.01 nm). A compressive strain higher than -0.5% strongly decreases point-defect generation inside the strained SiGe alloy due to the large positive value of the formation volume of a Frenkel pair. This leads to the suppression of point-defect clustering in a strained SiGe alloy so that SiGe relaxes via a diffusion of vacancies from the Si layer, giving rise to an intermixing at the Si/SiGe interface. In material with a 0.9% misfit a strongly increased flow of vacancies from the Si layer to the SiGe layer and an increased biaxial strain in SiGe bath promote the preferential aggregation of vacancies in the (001) plane, which relaxes to form intrinsic 60 degrees dislocation loops.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 27
DOI: 10.1103/PhysRevB.61.10336
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“Incorporation and localization of substitutional Mn2+ ions in cubic ZnS quantum dots”. Nistor SV, Stefan M, Nistor LC, Goovaerts E, Van Tendeloo G, Physical review : B : condensed matter and materials physics 81, 035336 (2010). http://doi.org/10.1103/PhysRevB.81.035336
Abstract: Multifrequency electron paramagnetic resonance (EPR) and high resolution transmission electron microscopy (HRTEM) investigations were performed on small (2 nm) cubic ZnS nanocrystals (quantum dotsQDs) doped with 0.2% mol Mn2+, self-assembled into a mesoporous structure. The EPR data analysis shows that the substitutional Mn2+ ions are localized at Zn2+ sites subjected to a local axial lattice distortion, resulting in the observed zero-field-splitting parameter |D|=41×10−4 cm−1. The local distortion is attributed to the presence in the second shell of ligands of a stacking fault or twin, which alters the normal stacking sequence of the cubic structure. The HRTEM results confirm the presence of such extended planar defects in a large percentage of the investigated QDs, which makes possible the proposed substitutional Mn2+ impurity ions localization model. Based on these results it is suggested that the high doping levels of Mn2+ ions observed in cubic ZnS and possible in other II-VI semiconductor QDs prepared at low temperatures can be explained by the assistance of the extended lattice defects in the impurities incorporation.
Keywords: A1 Journal article; Nanostructured and organic optical and electronic materials (NANOrOPT); Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 55
DOI: 10.1103/PhysRevB.81.035336
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“Induced polarization and electronic properties of carbon-doped boron nitride nanoribbons”. Beheshtian J, Sadeghi A, Neek-Amal M, Michel KH, Peeters FM, Physical review : B : condensed matter and materials physics 86, 195433 (2012). http://doi.org/10.1103/PhysRevB.86.195433
Abstract: The electronic properties of boron nitride nanoribbons (BNNRs) doped with a line of carbon atoms are investigated using density functional calculations. By replacing a line of alternating B and N atoms with carbons, three different configurations are possible depending on the type of the atoms which bond to the carbons. We found very different electronic properties for these configurations: (i) the NCB arrangement is strongly polarized with a large dipole moment having an unexpected direction, (ii) the BCB and NCN arrangements are nonpolar with zero dipole moment, (iii) the doping by a carbon line reduces the band gap regardless of the local arrangement of the borons and the nitrogens around the carbon line, and (iv) the polarization and energy gap of the carbon-doped BNNRs can be tuned by an electric field applied parallel to the carbon line. Similar effects were found when either an armchair or zigzag line of carbon was introduced.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 41
DOI: 10.1103/PhysRevB.86.195433
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“Influence of Al concentration on the optoelectronic properties of Al-doped MgO”. Sarmadian N, Saniz R, Lamoen D, Partoens B, Physical review : B : condensed matter and materials physics 86, 205129 (2012). http://doi.org/10.1103/PhysRevB.86.205129
Abstract: We use density functional theory within the local density approximation to investigate the structural, electronic, and optical properties of Al-doped MgO. The concentrations considered range from 6% to 56%. In the latter case, we also compare the optical properties of the amorphous and crystalline phases. We find that, overall, the electronic properties of the crystalline phases change qualitatively little with Al concentration. On the other hand, the changes in the electronic structure in the amorphous phase are more important, most notably because of deep impurity levels in the band gap that are absent in the crystalline phase. This leads to observable effects in, e.g., the optical absorption edge and in the refractive index. Thus, the latter can be used to characterize the crystalline to amorphous transition with Al doping level.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 5
DOI: 10.1103/PhysRevB.86.205129
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“Influence of electron-electron interaction on the cyclotron resonance spectrum of magnetic quantum dots containing few electrons”. Nga TTN, Peeters FM, Physical review : B : condensed matter and materials physics 83, 075419 (2011). http://doi.org/10.1103/PhysRevB.83.075419
Abstract: The configuration interaction method is used to obtain the magneto-optical absorption spectrum of a few-electron (Ne=1,2,,5) quantum dot containing a single magnetic ion. We find that the IR spectrum (the position, the number, and the oscillator strength of the cyclotron resonance peaks) depends on the strength of the Coulomb interaction, the number of electrons, and the position of the magnetic ion. We find that the Kohn theorem is no longer valid as a consequence of the electron-spin-magnetic-ion-spin-exchange interaction.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 8
DOI: 10.1103/PhysRevB.83.075419
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“Influence of finite size effects on exchange anisotropy in oxidized Co nanocluster assembled films”. Dobrynin AN, Ievlev DN, Hendrich C, Temst K, Lievens P, Hörmann U, Verbeeck J, Van Tendeloo G, Vantomme A, Physical review : B : condensed matter and materials physics 73, 245416 (2006). http://doi.org/10.1103/PhysRevB.73.245416
Abstract: We compare the magnetic properties of Co cluster assembled films with different degrees of oxidation. Clusters with grain size (2.3 +/- 0.7) nm are produced in a laser vaporization cluster source and soft-landed in ultrahigh vacuum conditions, forming highly porous nanogranular films. After exposure to air for different periods of time, the Co clusters oxidize and the sample may be considered as a thin antiferromagnetic Co oxide matrix containing ferromagnetic Co clusters. Magnetization measurements were performed in a temperature range from 300 down to 5 K, at applied magnetic fields up to 30 kOe. The exchange bias value at 5 K for the strongly oxidized sample is 4.8 kOe against the value of 0.75 kOe for the less oxidized sample. The mean values of the thicknesses of the Co oxide layers are estimated to be 0.6 and 0.3 nm for the more and less oxidized sample, respectively. We propose a method of measuring the exchange bias inducing temperature, i.e., the temperature at which exchange anisotropy is established. We determined the mean inducing temperatures for both samples, which are 55 and 25 K, respectively, for the more and less oxidized samples. Both temperatures are well below the bulk CoO Neel temperature of 292 K. A low value of the inducing temperature of the Co oxide layer is a consequence of its subnanometer thickness, while a large exchange bias value is a consequence of different dimensionality of Co clusters and Co oxide matrix.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 17
DOI: 10.1103/PhysRevB.73.245416
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“Influence of impurities and surface defects on the flux-induced current in mesoscopic d-wave superconducting loops”. Zha G-Q, Milošević, MV, Zhou S-P, Peeters FM, Physical review : B : condensed matter and materials physics 84, 132501 (2011). http://doi.org/10.1103/PhysRevB.84.132501
Abstract: We investigated the magnetic flux dependence of the supercurrent in mesoscopic d-wave superconducting loops, containing impurities and surface defects, by numerically solving the Bogoliubovde Gennes equations self-consistently. In the presence of impurities, bound states arise close to the Fermi energy. In the case of a single impurity, the flux-induced current is found to be suppressed. This can be different when more impurities are introduced in the sample due to the quantum interference effect, which depends sensitively on the relative position between the impurities. We further analyze the effect of small surface defects at the inner or outer edge of the loop, and show that indentation and bulge defects have pronounced and different effects on the supercurrent.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 13
DOI: 10.1103/PhysRevB.84.132501
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“Influence of magnet size on magnetically engineered field-induced superconductivity”. Gillijns W, Milošević, MV, Silhanek AV, Moshchalkov VV, Peeters FM, Physical review : B : condensed matter and materials physics 76, 184516 (2007). http://doi.org/10.1103/PhysRevB.76.184516
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 21
DOI: 10.1103/PhysRevB.76.184516
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“Influence of surface defects on vortex penetration and expulsion in mesoscopic superconductors”. Baelus BJ, Kadowaki K, Peeters FM, Physical review : B : condensed matter and materials physics 71, 024514 (2005). http://doi.org/10.1103/PhysRevB.71.024514
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 27
DOI: 10.1103/PhysRevB.71.024514
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“Influence of the confinement geometry on surface superconductivity”. Schweigert VA, Peeters FM, Physical review : B : condensed matter and materials physics 60, 3084 (1999). http://doi.org/10.1103/PhysRevB.60.3084
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 88
DOI: 10.1103/PhysRevB.60.3084
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“Influence of the shape and size of a quantum wire on the trion binding energy”. Sidor Y, Partoens B, Peeters FM, Physical review : B : condensed matter and materials physics 77, 205413 (2008). http://doi.org/10.1103/PhysRevB.77.205413
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 17
DOI: 10.1103/PhysRevB.77.205413
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“Influence of well-width fluctuations on the binding energy of excitons, charged excitons, and biexcitons in GaAs-based quantum wells”. Filinov AV, Riva C, Peeters FM, Lozovik YE, Bonitz M, Physical review : B : condensed matter and materials physics 70, 035323 (2004). http://doi.org/10.1103/PhysRevB.70.035323
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 77
DOI: 10.1103/PhysRevB.70.035323
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“Infrared absorption in superlattices: a probe of the miniband dispersion and the structure of the impurity band”. Helm M, Hilber W, Fromherz T, Peeters FM, Alavi K, Pathak R, Physical review : B : condensed matter and materials physics 48, 1601 (1993). http://doi.org/10.1103/PhysRevB.48.1601
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.736
Times cited: 61
DOI: 10.1103/PhysRevB.48.1601
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“Integer and half-integer quantum Hall effect in silicene: Influence of an external electric field and impurities”. Shakouri K, Vasilopoulos P, Vargiamidis V, Peeters FM, Physical review : B : condensed matter and materials physics 90, 235423 (2014). http://doi.org/10.1103/PhysRevB.90.235423
Abstract: The influence of silicene's strong spin-orbit interaction and of an external electric field E-z on the transport coefficients are investigated in the presence of a perpendicular magnetic field B. For finite E-z the spin and valley degeneracy of the Landau levels is lifted and leads to additional plateaus in the Hall conductivity, at half-integer values of 4e(2)/h, due to spin intra-Landau-level transitions that are absent in graphene. These plateaus are more sensitive to disorder and thermal broadening than the main plateaus, occurring at integral values of 4e(2)/h, when the Fermi level passes through the Landau levels. We also evaluate the Hall and longitudinal resistivities and critically contrast the results with those for graphene on a substrate.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 32
DOI: 10.1103/PhysRevB.90.235423
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“Interaction between a superconducting vortex and an out-of-plane magnetized ferromagnetic disk: influence of the magnet geometry”. Milošević, MV, Peeters FM, Physical review : B : condensed matter and materials physics 68, 094510 (2003). http://doi.org/10.1103/PhysRevB.68.094510
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 55
DOI: 10.1103/PhysRevB.68.094510
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