“Investigation of the electron distribution functions in low pressure electron cyclotron resonance discharges”. Kaganovich I, Misina M, Bogaerts A, Gijbels R Kluwer Academic, Dordrecht, page 543 (1999).
Keywords: H1 Book chapter; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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“The local structure of YBCO based materials by TEM”. Van Tendeloo G, Lebedev OI, Verbist K, Abakumov AM, Shpanchenko RV, Antipov EV, Blank DHA Kluwer Academic, Dordrecht, page 11 (1999).
Keywords: H1 Book chapter; Electron microscopy for materials research (EMAT)
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“Modelling of radio frequency capacitively coupled plasma at intermediate pressures”. Berezhnoi S, Kaganovich I, Bogaerts A, Gijbels R Kluwer Academic, Dordrecht, page 525 (1999).
Keywords: H3 Book chapter; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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“Orientational disorder and order in C60-fullerite and in MC60-alkali metal fullerides”. Nikolaev AV, Michel KH, Copley JRD Plenum Press, New York, page 183 (1999).
Keywords: H3 Book chapter; Condensed Matter Theory (CMT)
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“A self-consistent mathematical model of a hollow cathode glow discharge”. Baguer N, Bogaerts A, Gijbels R, , 157 (1999)
Keywords: P1 Proceeding; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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“Capabilities of TOF-SIMS to study the influence of different oxidation conditions on metal contamination redistribution”. de Witte H, de Gendt S, Douglas M, Conard T, Kenis K, Mertens PW, Vandervorst W, Gijbels R s.n., Leuven, page 147 (1999).
Keywords: H1 Book chapter; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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“Extended defects formation in Si crystals by clustering of intrinsic point defects studied by in-situ electron irradiation in an HREM”. Fedina L, Gutakovskii A, Aseev A, van Landuyt J, Vanhellemont J, Physica status solidi: A: applied research
T2 –, International Conference on Extended Defects in Semiconductors (EDS 98), Sept. 06-11, 1998, Jaszowiec, Poland 171, 147 (1999). http://doi.org/10.1002/(SICI)1521-396X(199901)171:1<147::AID-PSSA147>3.0.CO;2-U
Abstract: In situ irradiation experiments in a high resolution electron microscope JEOL-4000EX at room temperature resulted in discovery of the isolated and combined clustering of vacancies and self-interstitial atoms on {111}- and {113}-habit planes both leading to an extended defect formation in Si crystals. The type of the defect is strongly affected by the type of supersaturation of point defects depending on the crystal thickness during electron irradiation. Because of the existence of energy barriers against recombination of interstitials with the extended aggregates of vacancies, a large family of intermediate defect configurations (IDCs) is formed on {113}- and {111}-habit planes at a low temperature under interstitial supersaturation in addition to the well-known {133}-defects of interstitial type. The formation of metastable IDCs inside vacancy aggregates prevents a way of recombination of defects in extended shape.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 40
DOI: 10.1002/(SICI)1521-396X(199901)171:1<147::AID-PSSA147>3.0.CO;2-U
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