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Author |
Salluzzo, M.; Aruta, C.; Maggio-Aprile, I.; Fischer, Ø.; Bals, S.; Zegenhagen, J. |
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Title |
Growth of R1+xBa2-xCu3O7-\delta epitaxial films investigated by in situ scanning tunneling microscopy |
Type |
A1 Journal article |
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Year |
2001 |
Publication |
Physica status solidi: A: applied research |
Abbreviated Journal |
Phys Status Solidi A |
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Volume |
186 |
Issue |
3 |
Pages |
339-364 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
The problem of the epitaxial growth of the high temperature superconducting R1+xBa2xCu3O7δ (R = Y or rare earth except Ce and Tb) films has been addressed. Using in situ ultra high vacuum Scanning Tunneling Microscopy (UHV-STM) we have studied the role of cationic substitution and substrate mismatch on the growth mode of stoichiometric and Nd-rich Nd1+xBa2xCu3O7δ thin films. The results are compared to the growth of Y1Ba2Cu3O7δ, Dy1Ba2Cu3O7δ and Gd1Ba2Cu3O7δ epitaxial films. Two main phenomena are investigated: a) the first stage of the direct nucleation on the substrate and b) the crossover between 2D and 3D growth upon increasing the film thickness. At the first stage of the growth, pseudo-cubic perovskite (Re,Ba)CuO3 nuclei are formed. While they disappear after the growth of a few nm in stoichiometric films, they persist on the surface of Nd-rich films of up to 110 nm thickness. Stoichiometric R1+xBa2xCu3O7δ films exhibit a rough morphology with increasing thickness due to island growth mode, whereas Nd-rich films remain smooth and continue to grow layer by layer. It is proposed that linear defects (like anti-phase boundaries), which are formed due to the misalignment of growth fronts, are the source of screw dislocations in stoichiometric films. In Nd-rich films, linear defects are eliminated through the insertion of (Nd,Ba)CuO3 extra layers without introduction of any screw dislocations. |
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Place of Publication |
Berlin |
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Wos |
000170844500002 |
Publication Date |
2004-11-24 |
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Edition |
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ISSN |
0031-8965;1521-396X; |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
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Times cited |
17 |
Open Access |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:87587 |
Serial |
1398 |
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Author |
Salluzzo, M.; Aruta, C.; Ausanio, G.; Bals, S.; d' Agostino, A.; Maglione, M.G. |
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Title |
Role of Nd/Ba substitution on the growth mode and on the structural properties of Nd-rich Re1(NdxBa2-x)Cu3O7-\delta (Re=Nd, Y) thin films |
Type |
A1 Journal article |
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Year |
2002 |
Publication |
Physica: C : superconductivity |
Abbreviated Journal |
Physica C |
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Volume |
372-376 |
Issue |
2 |
Pages |
675-678 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
Thin films of the superconducting Nd1+xBa2−xCu3O7−δ (NBCO) and Y1(NdxBa2−x)Cu3O7−δ (YNBCO) compounds have been deposited by dc magnetron sputtering and diode high pressure oxygen sputtering. Different techniques, including scanning tunneling microscopy, atomic force microscopy, X-ray diffraction and transmission electron microscopy (TEM) have been used to study the film microstructures and the surface morphology. It is shown that the Nd/Ba exchange promotes a 2D heteroepitaxial growth in the case of the NBCO films deposited on (1 0 0) SrTiO3 substrates, with a suppression of the characteristic 3D spirals structures. On the contrary in YNBCO the Nd/Ba exchange does not provide a driving force for the suppression of screw-dislocations, since spirals or towers originated by screw and half loop dislocations are observed on the surface. TEM reveals that anti-phase boundaries are eliminated during the growth of NBCO films thanks to the Nd/Ba exchange while this mechanism is not operating in the case of YNBCO films. |
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Place of Publication |
Amsterdam |
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Wos |
000178018800024 |
Publication Date |
2002-08-26 |
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Edition |
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ISSN |
0921-4534; |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
1.404 |
Times cited |
5 |
Open Access |
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Notes |
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Approved |
Most recent IF: 1.404; 2002 IF: 0.912 |
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Call Number |
UA @ lucian @ c:irua:87909 |
Serial |
2917 |
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Permanent link to this record |