|
|
“Extended defects formation in Si crystals by clustering of intrinsic point defects studied by in-situ electron irradiation in an HREM”. Fedina L, Gutakovskii A, Aseev A, van Landuyt J, Vanhellemont J, Physica status solidi: A: applied research
T2 –, International Conference on Extended Defects in Semiconductors (EDS 98), Sept. 06-11, 1998, Jaszowiec, Poland 171, 147 (1999). http://doi.org/10.1002/(SICI)1521-396X(199901)171:1<147::AID-PSSA147>3.0.CO;2-U
Abstract: In situ irradiation experiments in a high resolution electron microscope JEOL-4000EX at room temperature resulted in discovery of the isolated and combined clustering of vacancies and self-interstitial atoms on {111}- and {113}-habit planes both leading to an extended defect formation in Si crystals. The type of the defect is strongly affected by the type of supersaturation of point defects depending on the crystal thickness during electron irradiation. Because of the existence of energy barriers against recombination of interstitials with the extended aggregates of vacancies, a large family of intermediate defect configurations (IDCs) is formed on {113}- and {111}-habit planes at a low temperature under interstitial supersaturation in addition to the well-known {133}-defects of interstitial type. The formation of metastable IDCs inside vacancy aggregates prevents a way of recombination of defects in extended shape.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 40
DOI: 10.1002/(SICI)1521-396X(199901)171:1<147::AID-PSSA147>3.0.CO;2-U
|
|
|
“Capabilities of TOF-SIMS to study the influence of different oxidation conditions on metal contamination redistribution”. de Witte H, de Gendt S, Douglas M, Conard T, Kenis K, Mertens PW, Vandervorst W, Gijbels R s.n., Leuven, page 147 (1999).
Keywords: H1 Book chapter; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
|
|
|
“A self-consistent mathematical model of a hollow cathode glow discharge”. Baguer N, Bogaerts A, Gijbels R, , 157 (1999)
Keywords: P1 Proceeding; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
|
|
|
“Orientational disorder and order in C60-fullerite and in MC60-alkali metal fullerides”. Nikolaev AV, Michel KH, Copley JRD Plenum Press, New York, page 183 (1999).
Keywords: H3 Book chapter; Condensed Matter Theory (CMT)
|
|
|
“Investigation of the electron distribution functions in low pressure electron cyclotron resonance discharges”. Kaganovich I, Misina M, Bogaerts A, Gijbels R Kluwer Academic, Dordrecht, page 543 (1999).
Keywords: H1 Book chapter; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
|
|
|
“The local structure of YBCO based materials by TEM”. Van Tendeloo G, Lebedev OI, Verbist K, Abakumov AM, Shpanchenko RV, Antipov EV, Blank DHA Kluwer Academic, Dordrecht, page 11 (1999).
Keywords: H1 Book chapter; Electron microscopy for materials research (EMAT)
|
|
|
“Modelling of radio frequency capacitively coupled plasma at intermediate pressures”. Berezhnoi S, Kaganovich I, Bogaerts A, Gijbels R Kluwer Academic, Dordrecht, page 525 (1999).
Keywords: H3 Book chapter; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
|
|
|
“Comprehensive modelling network for dc glow discharges in argon”. Bogaerts A, Plasma sources science and technology 8, 210 (1999). http://doi.org/10.1088/0963-0252/8/2/003
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 3.302
Times cited: 27
DOI: 10.1088/0963-0252/8/2/003
|
|
|
“Inorganic mass spectrometry”. Adams F, Gijbels R, van Grieken R, Kim Y-sang Freedom Academy Press, Seoul (1999).
Keywords: ME3 Book as editor; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT); AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
|
|
|
“Distribution of fields and charge carriers in cylindrical nanosize silicon-based metal-oxide-semiconductor structures”. Pokatilov EP, Fomin VM, Balaban SN, Gladilin VN, Klimin SN, Devreese JT, Magnus W, Schoenmaker W, Collaert N, van Rossum M, de Meyer K, Journal Of Applied Physics 85, 6625 (1999). http://doi.org/10.1063/1.370171
Keywords: A1 Journal article; Electron Microscopy for Materials Science (EMAT);
Impact Factor: 2.068
Times cited: 16
DOI: 10.1063/1.370171
|
|
|
“Hall potentiometer in the ballistic regime”. Baelus BJ, Peeters FM, Applied physics letters 74, 1600 (1999). http://doi.org/10.1063/1.123629
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 13
DOI: 10.1063/1.123629
|
|
|
“High resolution electron microscopy study of molecular beam epitaxy grown CoSi2/Si1-xGex/Si(100) heterostructurs”. Buschmann V, Rodewald M, Fuess H, Van Tendeloo G, Schäffer C, Journal of applied physics 85, 2119 (1999). http://doi.org/10.1063/1.369512
Abstract: Two CoSi2/Si1-xGex/Si(100) heterostructures, with different Ge content, made by molecular beam epitaxy are characterized by high resolution electron microscopy. In general, the interface between the CoSi2 thin film and the Si1-xGex layer is of a high structural quality and the strained Si1-xGex layer exhibits few defects. For both samples, different interface structures are present, although the dominant interfacial configuration is similar to the unreconstructed interface present at the CoSi2/Si(100) interface. Only occasionally (2x1) reconstructed interface regions are found which are just a few nanometers in length. Phenomena such as Ge segregation and the introduction of defects are also observed in the Si1-xGex layer. We attribute the minimal presence of the reconstructed interface to both the (2x8):Si1-xGex(100) surface reconstruction and the Ge segregation that takes place. (C) 1999 American Institute of Physics. [S0021-8979(99)02104-0].
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.068
Times cited: 6
DOI: 10.1063/1.369512
|
|
|
“Holotomography: quantitative phase tomography with micrometer resolution using hard synchrotron radiation X-rays”. Cloetens P, Ludwig W, Baruchel J, van Dyck D, van Landuyt J, Guigay JP, Schlenker M, Applied physics letters 75, 2912 (1999). http://doi.org/10.1063/1.125225
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 3.411
Times cited: 481
DOI: 10.1063/1.125225
|
|
|
“Modeling of ionization of argon in an analytical capacitively coupled radio-frequency glow discharge”. Bogaerts A, Yan M, Gijbels R, Goedheer W, Journal of applied physics 86, 2990 (1999). http://doi.org/10.1063/1.371159
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.068
Times cited: 18
DOI: 10.1063/1.371159
|
|
|
“A potential method to correlate electrical properties and microstructure of a unique high-Tc superconducting Josephson junction”. Verbist K, Lebedev OI, Van Tendeloo G, Tafuri F, Granozio FM, Di Chiara A, Bender H, Applied physics letters 74, 1024 (1999). http://doi.org/10.1063/1.123443
Abstract: A method to correlate microstructure from cross-section transmission electron microscopy (TEM) investigations and transport properties of a single well characterized high-T-c artificial grain boundary junction is reported. A YBa2Cu3O7-delta 45 degrees twist junction exhibiting the typical phenomenology of high T-c Josephson weak links was employed. The TEM sample preparation is based on focused ion beam etching and allows to easily localize the electron transparent area on a microbridge. The reported technique opens clear perspectives in the determination of the microstructural origin of variations in Josephson junction properties, such as the spread in I-c and IcRN values and the presence of different transport regimes in nominally identical junctions. (C) 1999 American Institute of Physics. [S0003-6951(99)03404-X].
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 5
DOI: 10.1063/1.123443
|
|
|
“Role of Ar2+ and Ar+2 ions in a direct current argon glow discharge: a numerical description”. Bogaerts A, Gijbels R, Journal of applied physics 86, 4124 (1999). http://doi.org/10.1063/1.371337
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.068
Times cited: 50
DOI: 10.1063/1.371337
|
|
|
“Hybrid magnetic-semiconductor nanostructures”. Peeters FM, de Boeck J Academic Press, New York, page 345 (1999).
Keywords: H3 Book chapter; Condensed Matter Theory (CMT)
|
|
|
“Hysteresis in mesoscopic superconducting disks: the Bean-Livingston barrier”. Deo PS, Schweigert VA, Peeters FM, Physical review : B : condensed matter and materials physics 59, 6039 (1999). http://doi.org/10.1103/PhysRevB.59.6039
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 59
DOI: 10.1103/PhysRevB.59.6039
|
|
|
“Mesoscopic superconducting disks”. Deo PS, Peeters FM, Schweigert VA, Superlattices and microstructures 25, 1195 (1999). http://doi.org/10.1006/spmi.1999.0734
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.123
Times cited: 22
DOI: 10.1006/spmi.1999.0734
|
|
|
“Accurate infrared absorption measurement of interstitial and precipitated oxygen in p+ silicon wafers”. De Gryse O, Clauws P, Rossou L, van Landuyt J, Vanhellemont J, Microelectronic engineering 45, 277 (1999). http://doi.org/10.1016/S0167-9317(99)00180-X
Abstract: A novel infrared absorption method has been developed to measure [he interstitial oxygen concentration in highly doped silicon. Thin samples of the order of 10-30 mu m are prepared in an essentially stress-free state without changing the state of the crystal. The oxygen concentration is then determined by measuring the height of the 1136-cm(-1) absorption peak due to interstitial oxygen at 5.5 K. The obtained results on as-grown samples are compared with those from gas fusion analysis. The precipitated oxygen concentration in annealed samples is also determined with the new method. It will be shown that the interstitial oxygen concentration in highly doped silicon can be determined with high accuracy and down to concentrations of 10(17) cm(-3). (C) 1999 Elsevier Science B.V. All rights reserved.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 1.806
DOI: 10.1016/S0167-9317(99)00180-X
|
|
|
“Accurate infrared spectroscopy determination of interstitial and precipitated oxygen in highly doped Czochralski-grown silicon”. de Gryse O, Clauws P, Rossou L, van Landuyt J, Vanhellemont J, The review of scientific instruments 70, 3661 (1999). http://doi.org/10.1063/1.1149974
Abstract: A method has been developed to determine the interstitial and precipitated oxygen concentration in highly doped n- and p-type silicon. 10-30-mu m-thin silicon samples in a mechanical stress-free state and without alteration of the thermal history are prepared and measured with Fourier transform infrared spectroscopy at 5.5-6 K. The measured oxygen contents in the as-grown Si samples agree well with those obtained with gas fusion analysis. In the highly boron-doped samples, the interstitial oxygen can be determined down to 10(17) cm(-3). (C) 1999 American Institute of Physics. [S0034-6748(99)04909-6].
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.515
Times cited: 5
DOI: 10.1063/1.1149974
|
|
|
“Advanced TEM studies of martensite and related phase transformations”. Schryvers D s.l., page 947 (1999).
Keywords: H1 Book chapter; Electron microscopy for materials research (EMAT)
|
|
|
“Aerosol synthesis of nanostructured, ultrafine fullerene particles”. Joutsensaari J, Ahonen PP, Tapper U, Kauppinen EI, Pauwels B, Amelinckx S, Van Tendeloo G, (1999)
Keywords: P3 Proceeding; Electron microscopy for materials research (EMAT)
|
|
|
“Anion ordering in fluorinated La2CuO4”. Abakumov AM, Hadermann J, Van Tendeloo G, Shpanchenko RV, Oleinikov PN, Antipov EV, Journal of solid state chemistry 142, 311 (1999). http://doi.org/10.1006/jssc.1998.8064
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.299
Times cited: 20
DOI: 10.1006/jssc.1998.8064
|
|
|
“Anion ordering in fluorinated La2CuO4”. Hadermann J, Abakumov AM, Van Tendeloo G, Shpanchenko RV, Oleinikov PN, Antipov EV s.l., page 133 (1999).
Keywords: H1 Book chapter; Electron microscopy for materials research (EMAT)
|
|
|
“Characterization of AgxAuy nano particles by TEM and STEM”. de Vyt A, Gijbels R, Davock H, van Roost C, Geuens I, Journal of analytical atomic spectrometry 14, 499 (1999). http://doi.org/10.1039/a807695b
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 3.379
Times cited: 2
DOI: 10.1039/a807695b
|
|
|
“Charge ordering-disordering in Th-doped CaMnO3”. Hervieu M, Martin C, Maignan A, Van Tendeloo G, Raveau B, European physical journal : B : condensed matter and complex systems 10, 397 (1999). http://doi.org/10.1007/s100510050869
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.461
Times cited: 6
DOI: 10.1007/s100510050869
|
|
|
“Clustering of vacancies on {113} planes in Si layers close to Si-Si3N4 interfaces and further aggregation of self-interstitials inside vacancy clusters during electron irradiation”. Fedina L, Gutakovskii A, Aseev A, van Landuyt J, Vanhellemont J, Institute of physics conference series
T2 –, Conference on Microscopy of Semiconducting Materials, MAR 22-25, 1999, UNIV OXFORD, OXFORD, ENGLAND , 495 (1999)
Abstract: In situ HREM irradiation of (110) FZ-Si crystals covered with thin Si3N4 films was carried out in a JEOL-4000EX microscope, operated at 400 keV at room temperature. It is found that clustering of vacancies on (113) planes is realised in a Si layer close to the Si-Si3N4 interface at the initial stage of irradiation. Further aggregation of self-interstitials inside vacancy clusters is considered as an alternative way of point defect recombination in extended shape, to be accomplished with the formation of the extended defects of interstitial type upon interstitial supersaturation.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
|
|
|
“Comparison between a radio-frequency and direct current glow discharge in argon by a hybrid Monte Carlo-fluid model for electrons, argon ions and fast argon atoms”. Bogaerts A, Gijbels R, Goedheer W, Spectrochimica acta: part B : atomic spectroscopy 54, 1335 (1999). http://doi.org/10.1016/S0584-8547(99)00080-4
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 3.241
Times cited: 11
DOI: 10.1016/S0584-8547(99)00080-4
|
|
|
“Continuum Wannier-Stark ladders strongly interacting with Zener resonances in semiconductor superlattices”. Helm M, Hilber W, Strasser G, de Meester R, Peeters FM, Wacker A, Physical review letters 82, 3120 (1999). http://doi.org/10.1103/PhysRevLett.82.3120
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 8.462
Times cited: 34
DOI: 10.1103/PhysRevLett.82.3120
|
