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Author | Sorée, B.; Magnus, W.; Pourtois, G. | ||||
Title | Analytical and self-consistent quantum mechanical model for a surrounding gate MOS nanowire operated in JFET mode | Type | A1 Journal article | ||
Year | 2008 | Publication | Journal of computational electronics | Abbreviated Journal | J Comput Electron |
Volume | 7 | Issue | 3 | Pages | 380-383 |
Keywords | A1 Journal article; Condensed Matter Theory (CMT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) | ||||
Abstract | We derive an analytical model for the electrostatics and the drive current in a silicon nanowire operating in JFET mode. We show that there exists a range of nanowire radii and doping densities for which the nanowire JFET satisfies reasonable device characteristics. For thin nanowires we have developed a self-consistent quantum mechanical model to obtain the electronic structure. | ||||
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Corporate Author | Thesis | ||||
Publisher ![]() |
Place of Publication | S.l. | Editor | ||
Language | Wos | 000208473800067 | Publication Date | 2008-02-20 | |
Series Editor | Series Title | Abbreviated Series Title | |||
Series Volume | Series Issue | Edition | |||
ISSN | 1569-8025;1572-8137; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
Impact Factor | 1.526 | Times cited | 70 | Open Access | |
Notes | Approved | Most recent IF: 1.526; 2008 IF: NA | |||
Call Number | UA @ lucian @ c:irua:89504 | Serial | 107 | ||
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