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“Quantum transport in a cylindrical sub-0.1 μm silicon-based MOSFET”. Balaban SN, Pokatilov EP, Fomin VM, Gladilin VN, Devreese JT, Magnus W, Schoenmaker W, van Rossum M, Sorée B, Solid-State Electronics 46, 435 (2002). http://doi.org/10.1016/S0038-1101(01)00117-4
Keywords: A1 Journal article; Electron Microscopy for Materials Science (EMAT);
Impact Factor: 1.58
Times cited: 16
DOI: 10.1016/S0038-1101(01)00117-4
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“A new method to calculate leakage current and its applications for sub-45nm MOSFETs”. Lujan GS, Magnus W, Soree B, Pourghaderi MA, Veloso A, van Dal MJH, Lauwers A, Kubicek S, De Gendt S, Heyns M, De Meyer K, Solid-State Device Research (ESSDERC), European Conference
T2 – ESSDERC 2005 : proceedings of 35th European Solid-State Device Research Conference, September 12-16, 2005, Grenoble, France. Ieee, S.l., page 489 (2005).
Abstract: This paper proposes a new quantum mechanical model for the calculation of leakage currents. The model incorporates both variational calculus and the transfer matrix method to compute the subband energies and the life times of the inversion layer states. The use of variational calculus simplifies the subband energy calculation due to the analytical firm of the wave functions, which offers an attractive perspective towards the calculation of the electron mobility in the channel. The model can be extended to high-k dielectrics with several layers. Good agreement between experimental data and simulation results is obtained for metal gate capacitors.
Keywords: H1 Book chapter; Condensed Matter Theory (CMT)
DOI: 10.1109/ESSDER.2005.1546691
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“Non-uniform strain in lattice-mismatched heterostructure tunnel field-effect transistors”. Verreck D, Verhulst AS, Sorée B, Collaert N, Mocuta A, Thean A, Groeseneken G, Solid-State Device Research (ESSDERC), European Conference
T2 –, 46th European Solid-State Device Research Conference (ESSDERC) / 42nd, European Solid-State Circuits Conference (ESSCIRC), SEP 12-15, 2016, Lausanne, SWITZERLAND , 412 (2016)
Abstract: Because of its localized impact on the band structure, non-uniform strain at the heterojunction between lattice-mismatched materials has the potential to significantly enlarge the design space for tunnel-field effect transistors (TFET). However, the impact of a complex strain profile on TFET performance is difficult to predict. We have therefore developed a 2D quantum mechanical transport formalism capable of simulating the effects of a general non-uniform strain. We demonstrate the formalism for the GaAsxSb(1-x)/InyGa(1-y) As system and show that a performance improvement over a lattice-matched reference is indeed possible, allowing for relaxed requirements on the source doping. We also point out that the added design parameter of mismatch is not free, but limited by the desired effective bandgap at the tunnel junction.
Keywords: P1 Proceeding; Condensed Matter Theory (CMT)
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“Nucleation and growth of bainitic Ni5Al3 in B2 austenite and 3R martensite”. Schryvers D, Ma Y, Toth L, Tanner LE, Solid-solid state phase transformations , 929 (1994)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“Compositionally induced phase transition in the Ca2MnGa1-xAlxO5 solid solutions: ordering of tetrahedral chains in brownmillerite structure”. Abakumov AM, Kalyuzhnaya AS, Rozova MG, Antipov EV, Hadermann J, Van Tendeloo G, Solid state sciences 7, 801 (2005). http://doi.org/10.1016/j.solidstatesciences.2005.01.020
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.811
Times cited: 38
DOI: 10.1016/j.solidstatesciences.2005.01.020
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“Ferroelectric phase transition in the whitlockite-type Ca9Fe(PO4)7, crystal structure of the paraelectric phase at 923 K”. Lazoryak BI, Morozov VA, Belik AA, Stefanovich SY, Grebenev VV, Leonidov IA, Mitberg EB, Davydov SA, Lebedev OI, Van Tendeloo G, Solid state sciences 6, 185 (2004). http://doi.org/10.1016/j.solidstatesciences.2003.12.007
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.811
Times cited: 41
DOI: 10.1016/j.solidstatesciences.2003.12.007
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“The layered manganate Sr4-xBaxMn3O10: synthesis, structural and magnetic properties”. Floros N, Hervieu M, Van Tendeloo G, Michel C, Maignan A, Raveau B, Solid state sciences 2, 1 (2000). http://doi.org/10.1016/S1293-2558(00)00115-1
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.811
Times cited: 29
DOI: 10.1016/S1293-2558(00)00115-1
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“Layered ordering of vacancies of lead iron phosphate Pb3Fe2(PO4)4”. Malakho AP, Morozov VA, Pokholok KV, Lazoryak BI, Van Tendeloo G, Solid state sciences 7, 397 (2005). http://doi.org/10.1016/j.solidstatesciences.2005.01.007
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.811
Times cited: 7
DOI: 10.1016/j.solidstatesciences.2005.01.007
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“Local structure of perovskite-based “Pb2Fe2O5””. Hadermann J, Abakumov AM, Nikolaev IV, Antipov EV, Van Tendeloo G, Solid state sciences 10, 382 (2008). http://doi.org/10.1016/j.solidstatesciences.2007.12.008
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.811
Times cited: 29
DOI: 10.1016/j.solidstatesciences.2007.12.008
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“Nanostructures in LuFe2O4+\delta”. Hervieu M, Damay F, Poienar M, Elkaim E, Rouquette J, Abakumov AM, Van Tendeloo G, Maignan A, Martin C, Solid state sciences 23, 26 (2013). http://doi.org/10.1016/j.solidstatesciences.2013.05.015
Abstract: A LuFe2O4+delta sample, previously characterized by X-ray synchrotron and neutron diffraction, has been studied by electron microscopy techniques, in order to get a precise description of its micro- and nanostructures at room temperature. The X-ray synchrotron data vs. temperature show that the monoclinic distortion is associated with the charge ordering; this distortion results in elongated twinning domains, which enhance the complexity of the microstructural state at room temperature. The structural modulation associated with oxygen excess is observed in large domains inside a non modulated matrix, in contrast with the modulations associated with the charge ordering of the Fe2+ and Fe3+ species, which are mostly short-range. The investigation of the nature and density of defects in the sample shows that they are nano-scaled, preserving the regularity of the layer stacking mode, and limited to the formation of one- or two-units large stacking faults, associated with gliding mechanisms. Based on these observations, an original description of the LuFe2O4 ferrite structure, through puckered [LuO4](infinity) sandwiching [Fe-2](infinity) layers, is proposed. (C) 2013 Elsevier Masson SAS. All rights reserved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.811
Times cited: 7
DOI: 10.1016/j.solidstatesciences.2013.05.015
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“New molybdenum oxides Ag4M2Zr(MoO4)6 (M=Mg, Mn, Co, Zn) with a channel-like structure”. Khobrakova ET, Morozov VA, Khasanov SS, Tsyrenova GD, Khaikina EG, Lebedev OI, Van Tendeloo G, Lazoryak BI, Solid state sciences 7, 1397 (2005). http://doi.org/10.1016/j.solidstatesciences.2005.08.010
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.811
Times cited: 9
DOI: 10.1016/j.solidstatesciences.2005.08.010
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“Order and twining in Sb2W0.75Mo0.25O6”. Enjalbert R, Galy J, Castro A, Lidin S, Withers R, Van Tendeloo G, Solid state sciences 5, 721 (2003). http://doi.org/10.1016/S1293-2558(03)00093-1
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.811
Times cited: 3
DOI: 10.1016/S1293-2558(03)00093-1
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“Structure and microstructure of nanoscale mesoporous silica spheres”. Lebedev OI, Van Tendeloo G, Collart O, Cool P, Vansant EF, Solid state sciences 6, 489 (2004). http://doi.org/10.1016/j.solidstatesciences.2004.01.013
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Laboratory of adsorption and catalysis (LADCA)
Impact Factor: 1.811
Times cited: 42
DOI: 10.1016/j.solidstatesciences.2004.01.013
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“Synthesis and investigation of novel Mn-based oxyfluoride Sr2Mn2O5-xF1+x”. Lobanov MV, Abakumov AM, Sidorova AV, Rozova MG, D'yachenko OG, Antipov EV, Hadermann J, Van Tendeloo G, Solid state sciences 4, 19 (2002). http://doi.org/10.1016/S1293-2558(01)01209-2
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.811
Times cited: 21
DOI: 10.1016/S1293-2558(01)01209-2
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“Synthesis and structural investigations on the new Sr1.32Mn0.83Cu0.17O3 compound”. Abakumov AM, Mironov AV, Govorov VA, Lobanov MV, Rozova MG, Antipov EV, Lebedev OI, Van Tendeloo G, Solid state sciences 5, 1117 (2003). http://doi.org/10.1016/S1293-2558(03)00141-9
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.811
Times cited: 8
DOI: 10.1016/S1293-2558(03)00141-9
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“Synthesis and structural mechanisms of the 2201-type ferrites and polytypes: Fe2(Sr2-xAx)FeO6.5-\delta/2 (A = Ba, La, Tl, Pb and Bi)”. Lepoittevin C, Malo S, Van Tendeloo G, Hervieu M, Solid state sciences 11, 595 (2009). http://doi.org/10.1016/j.solidstatesciences.2008.12.005
Abstract: The Fe2(Sr2 − xAx)FeO6.5 − ä/2 systems have been investigated, by doping the iron rich 2201-type parent structure with Ba2+, La3+ and 5d10 post-transition cations. The syntheses have been carried out up to the limit of the 2201-type solid solutions, in order to test the role of the double iron layer Fe2O2.5 − ä/2. The localisation of the charge carriers in these compounds is consistent with their strong antiferro-magnetism. The investigation was then carried out in the transition part of the diagram up to the formation of stable phases. The study of structural mechanisms was carried using high resolution electron microscopy (transmission and scanning transmission), electron diffraction and energy dispersive spectroscopy. Different non-stoichiometry mechanisms are observed, depending on the electronic structure and chemical properties of the doping elements. The specific behavior of the modulated double iron layer is discussed.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.811
Times cited: 3
DOI: 10.1016/j.solidstatesciences.2008.12.005
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“Synthesis and structure of Sr2MnGaO5+\delta brownmillerites with variable oxygen content”. Abakumov AM, Rozova MG, Alekseeva AM, Kovba ML, Antipov EV, Lebedev OI, Van Tendeloo G, Solid state sciences 5, 871 (2003). http://doi.org/10.1016/S1293-2558(03)00112-2
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.811
Times cited: 12
DOI: 10.1016/S1293-2558(03)00112-2
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“Zeotile-2: a microporous analogue of MCM-48”. Kremer SPB, Kirschhock CEA, Aerts A, Aerts CA, Houthoofd KJ, Grobet PJ, Jacobs PA, Lebedev OI, Van Tendeloo G, Martens JA, Solid state sciences 7, 861 (2005). http://doi.org/10.1016/j.solidstatesciences.2005.01.021
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.811
Times cited: 10
DOI: 10.1016/j.solidstatesciences.2005.01.021
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“Synthesis and structural characterization of a novel Sillén &ndash, Aurivillius bismuth oxyhalide, PbBi3VO7.5Cl, and its derivatives”. Charkin DO, Plokhikh IV, Kazakov SM, Kalmykov SN, Akinfiev VS, Gorbachev AV, Batuk M, Abakumov AM, Teterin YA, Maslakov KI, Teterin AY, Ivanov KE, Solid state sciences 75, 27 (2018). http://doi.org/10.1016/j.solidstatesciences.2017.11.006
Abstract: A new Sillen – Aurivillius family of layered bismuth oxyhalides has been designed and successfully constructed on the basis of PbBiO2X(X = halogen) synthetic perites and g-form of Bi2VO5.5 solid elec- trolyte. This demonstrates, for the first time, the ability of the latter to serve as a building block in construction of mixed-layer structures. The parent compound PbBi3VO7.5-dCl (d = 0.05) has been investigated by powder XRD, TEM, XPS methods and magnetic susceptibility measurements. An unexpected but important condition for the formation of the mixed-layer structure is partial (ca. 5%) reduction of VV into VIV which probably suppresses competitive formation of apatite-like Pb – Bi vanadates. This reduction also stabilizes the g polymorphic form of Bi2VO5.5 not only in the intergrowth structure, but in Bi2V1-xMxO5.5-y (M – Nb, Sb) solid solutions.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.811
Times cited: 1
DOI: 10.1016/j.solidstatesciences.2017.11.006
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“Microstructure and high temperature transport properties of high quality epitaxial SrFeO3-\delta films”. Solís C, Rossell MD, Garcia G, Figueras A, Van Tendeloo G, Santiso J, Solid state ionics 179, 1996 (2008). http://doi.org/10.1016/j.ssi.2008.06.004
Abstract: We report the high temperature electronic transport properties of SrFeO3 − ä epitaxial thin films obtained by pulsed laser deposition on NdGaO3(110) substrates. The films show total conductivity higher than the bulk material and apparent activation energy of about 0.12 eV in O2, lower than reported values for SrFeO3 − ä films. The conductivity dependence with oxygen partial pressure shows a power dependence with an exponent close to + 1/4, in agreement with expected point defect equilibrium. For a given oxygen partial pressure, the temperature coefficient of resistance (TCR) shows a low positive value of about 1.52.5 10− 3 K− 1, which is still suitable for resistive oxygen sensing applications. The transport properties of the films are discussed in view of their particular microstructure.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.354
Times cited: 10
DOI: 10.1016/j.ssi.2008.06.004
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“Synthesis and characterization of oxygen-deficient oxides BaCo1-xYxO3-y' x = 0.15, 0.25 and 0.33, with the perovskite structure”. Lomakov MV, Istomin SY, Abakumov AM, Van Tendeloo G, Antipov EV, Solid state ionics 179, 1885 (2008). http://doi.org/10.1016/j.ssi.2008.05.004
Abstract: Oxygen-deficient complex cobalt oxides BaCo1 − xYxO3 − y, = 0.15, 0.25 and 0.33, with a cubic perovskite structure have been synthesized in air at 1100 °C using a citrate route. Cation composition of the compounds was confirmed by energy-dispersed X-ray (EDX) microanalysis while oxygen content was determined by iodometric titration. An electron diffraction (ED) study of the x = 0.25 and 0.33 compositions show the presence of a diffuse intensity, indicating possible short-range ordering of the B cations. It was found that the treatment of BaCo0.75Y0.25O2.55 in a humid atmosphere leads to the absorption of water vapour at the first stage. Oxygen permeation studies of the ceramic membranes of BaCo0.75Y0.25O2.55 and BaCo0.67Y0.33O2.55 with variable thickness showed high oxygen fluxes of 0.170.32 µmol/cm2/s at 950 °C.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.354
Times cited: 9
DOI: 10.1016/j.ssi.2008.05.004
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“Thickness-dependent transport properties of Sr4Fe6O13 epitaxial thin films”. Pardo JA, Santiso J, Solis C, Garcia G, Figueras A, Rossell MD, Solid state ionics 177, 423 (2006). http://doi.org/10.1016/J.SSI.2005.11.024
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.354
DOI: 10.1016/J.SSI.2005.11.024
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“Comparison of strained SiGe heterostructure-on-insulator (0 0 1) and (1 1 0) PMOSFETs : CV characteristics, mobility, and ON current”. Pham A-T, Zhao Q-T, Jungemann C, Meinerzhagen B, Mantl S, Sorée B, Pourtois G, Solid state electronics 65-66, 64 (2011). http://doi.org/10.1016/j.sse.2011.06.021
Abstract: Strained SiGe heterostructure-on-insulator (0 0 1) and (1 1 0) PMOSFETs are investigated including important aspects like CV characteristics, mobility, and ON current. The simulations are based on the self-consistent solution of 6 × 6 k · p Schrödinger Equation, multi subband Boltzmann Transport Equation and Poisson Equation, and capture size quantization, strain, crystallographic orientation, and SiGe alloy effects on a solid physical basis. The simulation results are validated by comparison with different experimental data sources. The simulation results show that the strained SiGe HOI PMOSFET with (1 1 0) surface orientation has a higher gate capacitance and a much higher mobility and ON current compared to a similar device with the traditional (0 0 1) surface orientation.
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.58
Times cited: 2
DOI: 10.1016/j.sse.2011.06.021
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“Interplay of 2D and 3D charge carriers in Si-δ-doped InSb layers grown epitaxially on GaAs”. de Keyser A, Bogaerts R, Karavolas VC, van Bockstal L, Herlach F, Peeters FM, van de Graaf W, Borghs G, Solid state electronics 40, 395 (1996). http://doi.org/10.1016/0038-1101(96)84617-X
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.504
Times cited: 2
DOI: 10.1016/0038-1101(96)84617-X
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“Mini-band dispersion, critical points, and impurity bands in superlattices: an infrared absorption study”. Helm M, Hilber W, Fromherz T, Peeters FM, Alavi K, Pathak RN, Solid state electronics 37, 1277 (1994). http://doi.org/10.1016/0038-1101(94)90407-3
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.504
Times cited: 2
DOI: 10.1016/0038-1101(94)90407-3
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“Modeling the impact of junction angles in tunnel field-effect transistors”. Kao K-H, Verhulst AS, Vandenberghe WG, Sorée B, Groeseneken G, De Meyer K, Solid state electronics 69, 31 (2012). http://doi.org/10.1016/j.sse.2011.10.032
Abstract: We develop an analytical model for a tunnel field-effect transistor (TFET) with a tilted source junction angle. The tunnel current is derived by using circular tunnel paths along the electric field. The analytical model predicts that a smaller junction angle improves the TFET performance, which is supported by device simulations. An analysis is also made based on straight tunnel paths and tunnel paths corresponding to the trajectory of a classical particle. In all the aforementioned cases, the same conclusions are obtained. A TFET configuration with an encroaching polygon source junction is studied to analyze the junction angle dependence at the smallest junction angles. The improvement of the subthreshold swing (SS) with decreasing junction angle can be achieved by using thinner effective oxide thickness, smaller band gap material and longer encroaching length of the encroaching junction. A TFET with a smaller junction angle on the source side also has an innate immunity against the degradation of the fringing field from the gate electrode via a high-k spacer. A large junction angle on the drain side can suppress the unwanted ambipolar current of TFETs. (c) 2011 Elsevier Ltd. All rights reserved.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.58
Times cited: 9
DOI: 10.1016/j.sse.2011.10.032
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“Phonon-assisted Zener tunneling in a p-n diode silicon nanowire”. Carrillo-Nunez H, Magnus W, Vandenberghe WG, Sorée B, Peeters FM, Solid state electronics 79, 196 (2013). http://doi.org/10.1016/j.sse.2012.09.004
Abstract: The Zener tunneling current flowing through a biased, abrupt p-n junction embedded in a cylindrical silicon nanowire is calculated. As the band gap becomes indirect for sufficiently thick wires, Zener tunneling and its related transitions between the valence and conduction bands are mediated by short-wavelength phonons interacting with mobile electrons. Therefore, not only the high electric field governing the electrons in the space-charge region but also the transverse acoustic (TA) and transverse optical (TO) phonons have to be incorporated in the expression for the tunneling current. The latter is also affected by carrier confinement in the radial direction and therefore we have solved the Schrodinger and Poisson equations self-consistently within the effective mass approximation for both conduction and valence band electrons. We predict that the tunneling current exhibits a pronounced dependence on the wire radius, particularly in the high-bias regime. (C) 2012 Elsevier Ltd. All rights reserved.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.58
Times cited: 2
DOI: 10.1016/j.sse.2012.09.004
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“Quantum simulations of electrostatics in Si cylindrical junctionless nanowire nFETs and pFETs with a homogeneous channel including strain and arbitrary crystallographic orientations”. Pham A-T, Sorée B, Magnus W, Jungemann C, Meinerzhagen B, Pourtois G, Solid state electronics 71, 30 (2012). http://doi.org/10.1016/j.sse.2011.10.016
Abstract: Simulation results of electrostatics in Si cylindrical junctionless nanowire transistors with a homogenous channel are presented. Junctionless transistors including strain and arbitrary crystallographic orientations are studied. Size quantization effects are simulated by self-consistent solutions of the Poisson and Schrodinger equations. The 6 x 6 k.p method is employed for the calculation of the valence subband structure in a junctionless nanowire pFET. The influence of stress/strain and crystallographic channel orientation on to the electrostatics in terms of subband structure, charge density, and C-V curve is systematically studied. (C) 2011 Elsevier Ltd. All rights reserved.
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.58
Times cited: 2
DOI: 10.1016/j.sse.2011.10.016
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“Resonant magneto-polarons in strongly-coupled superlattices”. Peeters FM, Shi JM, Devreese JT, Cheng J-P, McCombe BD, Schaff W, Solid state electronics 37, 1217 (1994). http://doi.org/10.1016/0038-1101(94)90393-X
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Impact Factor: 1.504
Times cited: 5
DOI: 10.1016/0038-1101(94)90393-X
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“Size effects in the transport properties of thin Sc1-xErxAs epitaxial layers buried in GaAs”. Bogaerts R, de Keyser A, Herlach F, Peeters FM, DeRosa F, Palmstrøm CJ, Brehmer D, Allen SJ, Solid state electronics 37, 789 (1994). http://doi.org/10.1016/0038-1101(94)90299-2
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.504
Times cited: 4
DOI: 10.1016/0038-1101(94)90299-2
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