|
“Effectiveness of reducing the influence of CTAB at the surface of metal nanoparticles during in situ heating studies by TEM”. De Meyer R, Albrecht W, Bals S, Micron 144, 103036 (2021). http://doi.org/10.1016/j.micron.2021.103036
Abstract: In situ TEM is a valuable technique to offer novel insights in the behavior of nanomaterials under various conditions. However, interpretation of in situ experiments is not straightforward since the electron beam can impact the outcome of such measurements. For example, ligands surrounding metal nanoparticles transform into a protective carbon layer upon electron beam irradiation and may impact the apparent thermal stability during in situ heating experiments. In this work, we explore the effect of different treatments typically proposed to remove such ligands. We found that plasma treatment prior to heating experiments for Au nanorods and nanostars increased the apparent thermal stability of the nanoparticles, while an activated carbon treatment resulted in a decrease of the observed thermal stability. Treatment with HCl barely changed the experimental outcome. These results demonstrate the importance of carefully selecting pre-treatments procedures during in situ heating experiments.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.98
DOI: 10.1016/j.micron.2021.103036
|
|
|
“Exploring the effects of graphene and temperature in reducing electron beam damage: A TEM and electron diffraction-based quantitative study on Lead Phthalocyanine (PbPc) crystals”. Jain N, Hao Y, Parekh U, Kaltenegger M, Pedrazo-Tardajos A, Lazzaroni R, Resel R, Geerts YH, Bals S, Van Aert S, Micron 169, 103444 (2023). http://doi.org/10.1016/j.micron.2023.103444
Abstract: High-resolution transmission electron microscopy (TEM) of organic crystals, such as Lead Phthalocyanine (PbPc), is very challenging since these materials are prone to electron beam damage leading to the breakdown of the crystal structure during investigation. Quantification of the damage is imperative to enable high-resolution imaging of PbPc crystals with minimum structural changes. In this work, we performed a detailed electron diffraction study to quantitatively measure degradation of PbPc crystals upon electron beam irradiation. Our study is based on the quantification of the fading intensity of the spots in the electron diffraction patterns. At various incident dose rates (e/Å2/s) and acceleration voltages, we experimentally extracted the decay rate (1/s), which directly correlates with the rate of beam damage. In this manner, a value for the critical dose (e/Å2) could be determined, which can be used as a measure to quantify beam damage. Using the same methodology, we explored the influence of cryogenic temperatures, graphene TEM substrates, and graphene encapsulation in prolonging the lifetime of the PbPc crystal structure during TEM investigation. The knowledge obtained by diffraction experiments is then translated to real space high-resolution TEM imaging of PbPc.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.4
Times cited: 1
DOI: 10.1016/j.micron.2023.103444
|
|
|
“Progress in spin logic devices based on domain-wall motion”. Vermeulen BB, Sorée B, Couet S, Temst K, Van Nguyen D, Micromachines 15, 696 (2024). http://doi.org/10.3390/MI15060696
Abstract: Spintronics, utilizing both the charge and spin of electrons, benefits from the nonvolatility, low switching energy, and collective behavior of magnetization. These properties allow the development of magnetoresistive random access memories, with magnetic tunnel junctions (MTJs) playing a central role. Various spin logic concepts are also extensively explored. Among these, spin logic devices based on the motion of magnetic domain walls (DWs) enable the implementation of compact and energy-efficient logic circuits. In these devices, DW motion within a magnetic track enables spin information processing, while MTJs at the input and output serve as electrical writing and reading elements. DW logic holds promise for simplifying logic circuit complexity by performing multiple functions within a single device. Nevertheless, the demonstration of DW logic circuits with electrical writing and reading at the nanoscale is still needed to unveil their practical application potential. In this review, we discuss material advancements for high-speed DW motion, progress in DW logic devices, groundbreaking demonstrations of current-driven DW logic, and its potential for practical applications. Additionally, we discuss alternative approaches for current-free information propagation, along with challenges and prospects for the development of DW logic.
Keywords: A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
DOI: 10.3390/MI15060696
|
|
|
“Adsorption of small molecules on graphene”. Leenaerts O, Partoens B, Peeters FM, Microelectronics journal 40, 860 (2009). http://doi.org/10.1016/j.mejo.2008.11.022
Abstract: We investigate the adsorption process of small molecules on graphene through first-principles calculations and show the presence of two main charge transfer mechanisms. Which mechanism is the dominant one depends on the magnetic properties of the adsorbing molecules. We explain these mechanisms through the density of states of the system and the molecular orbitals of the adsorbates, and demonstrate the possible difficulties in calculating the charge transfer from first principles between a graphene sheet and a molecule. Our results are in good agreement with experiment.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.163
Times cited: 116
DOI: 10.1016/j.mejo.2008.11.022
|
|
|
“Dielectric mismatch effect on coupled impurity states in a freestanding nanowire”. Li B, Partoens B, Peeters FM, Magnus W, Microelectronics journal 40, 446 (2009). http://doi.org/10.1016/j.mejo.2008.06.028
Abstract: We studied the coupled impurity states in a freestanding semiconductor nanowire (NW), within the effective mass approximation and including the effect of the dielectric mismatch, by using finite element method. Bonding and anti-bonding states are found and their energies converge with increasing distance di between the two impurities. The dependence of the binding energy on the wire radius R and the distance di between the two impurities is investigated, and we compare it with the result of a freestanding NW that contains a single impurity.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.163
Times cited: 4
DOI: 10.1016/j.mejo.2008.06.028
|
|
|
“Neutral shallow donors near a metallic interface”. Slachmuylders AF, Partoens B, Magnus W, Peeters FM, Microelectronics journal 40, 753 (2009). http://doi.org/10.1016/j.mejo.2008.11.010
Abstract: The effect of a metallic gate on the bound states of a shallow donor located near the gate is studied. We calculate the energy spectrum as a function of the distance between the metallic gate and the donor and find an anti-crossing behavior in the energy levels for certain distances. We show how a transverse electric field can tune the average position of the electron with respect to the metallic gate and the impurity.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.163
Times cited: 1
DOI: 10.1016/j.mejo.2008.11.010
|
|
|
“Resonant tunneling in graphene microstructures”. Milton Pereira J, Vasilopoulos P, Peeters FM, Microelectronics journal 39, 534 (2008). http://doi.org/10.1016/j.mejo.2007.07.099
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.163
Times cited: 9
DOI: 10.1016/j.mejo.2007.07.099
|
|
|
“Theoretical study of InAs/GaAs quantum dots grown on [11k] substrates in the presence of a magnetic field”. Mlinar V, Peeters FM, Microelectronics journal 37, 1427 (2006). http://doi.org/10.1016/j.mejo.2006.05.018
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.163
DOI: 10.1016/j.mejo.2006.05.018
|
|
|
“Tuning of the optical properties of (11k) grown InAs quantum dots by the capping layer”. Mlinar V, Peeters FM, Microelectronics journal 39, 359 (2008). http://doi.org/10.1016/j.mejo.2007.07.052
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.163
DOI: 10.1016/j.mejo.2007.07.052
|
|
|
“Type II quantum dots in magnetic fields: excitonic behaviour”. Janssens KL, Partoens B, Peeters FM, Microelectronics journal 34, 347 (2003). http://doi.org/10.1016/S0026-2692(03)00023-5
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.163
Times cited: 1
DOI: 10.1016/S0026-2692(03)00023-5
|
|
|
“Accurate infrared absorption measurement of interstitial and precipitated oxygen in p+ silicon wafers”. De Gryse O, Clauws P, Rossou L, van Landuyt J, Vanhellemont J, Microelectronic engineering 45, 277 (1999). http://doi.org/10.1016/S0167-9317(99)00180-X
Abstract: A novel infrared absorption method has been developed to measure [he interstitial oxygen concentration in highly doped silicon. Thin samples of the order of 10-30 mu m are prepared in an essentially stress-free state without changing the state of the crystal. The oxygen concentration is then determined by measuring the height of the 1136-cm(-1) absorption peak due to interstitial oxygen at 5.5 K. The obtained results on as-grown samples are compared with those from gas fusion analysis. The precipitated oxygen concentration in annealed samples is also determined with the new method. It will be shown that the interstitial oxygen concentration in highly doped silicon can be determined with high accuracy and down to concentrations of 10(17) cm(-3). (C) 1999 Elsevier Science B.V. All rights reserved.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 1.806
DOI: 10.1016/S0167-9317(99)00180-X
|
|
|
“Barrier permeation effects on the inversion layer subband structure and its applications to the electron mobility”. Lujan GS, Magnus W, Sorée B, Ragnarsson LA, Trojman L, Kubicek S, De Gendt S, Heyns A, De Meyer K, Microelectronic engineering 80, 82 (2005). http://doi.org/10.1016/j.mee.2005.04.047
Abstract: The electron wave functions in the inversion layer are analyzed in the case where the dielectric barriers are not infinite. This forces the electron concentration closer to the interface silicon/oxide and reduces the subband energy. This treatment of the inversion layer is extended to the calculation of the electron mobility degradation due to remote Coulomb scattering on a high-k dielectric stacked transistor. The subband energy reduction leads to a decrease of the scattering charge needed to explain the experimental results. This model can also fit better the experimental data when compared with the case where no barrier permeation is considered.
Keywords: A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Impact Factor: 1.806
Times cited: 1
DOI: 10.1016/j.mee.2005.04.047
|
|
|
“First-principle calculations on gate/dielectric interfaces : on the origin of work function shifts”. Pourtois G, Lauwers A, Kittl J, Pantisano L, Sorée B, De Gendt S, Magnus W, Heyns A, Maex K, Microelectronic engineering 80, 272 (2005). http://doi.org/10.1016/j.mee.2005.04.080
Abstract: The impact of interfacial chemistry occurring at dielectric/gate interface of P-MOS and N-MOS devices is reviewed through a quick literature survey. A specific emphasis is put on the way the bond polarization that occurs between a dielectric and a metal substrate impacts on the gate work function. First-principle simulations are then used to study the work function changes induced by dopant aggregation in nickel monosilicide metal gates. It is shown that the changes are a natural consequence of the variation of the interface polarization.
Keywords: A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.806
Times cited: 31
DOI: 10.1016/j.mee.2005.04.080
|
|
|
“Mesoscopic superconducting disks: fluxoids in a box”. Peeters FM, Schweigert VA, Deo PS, Microelectronic engineering 47, 393 (1999). http://doi.org/10.1016/S0167-9317(99)00242-7
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.806
Times cited: 1
DOI: 10.1016/S0167-9317(99)00242-7
|
|
|
“Phase formation in intermixed NiGe thin films : influence of Ge content and low-temperature nucleation of hexagonal nickel germanides”. De Schutter B, Devulder W, Schrauwen A, van Stiphout K, Perkisas T, Bals S, Vantomme A, Detavernier C, Microelectronic engineering 120, 168 (2014). http://doi.org/10.1016/j.mee.2013.09.004
Abstract: In this study, we focus on phase formation in intermixed NiGe thin films as they represent a simplified model of the small intermixed interface layer that is believed to form upon deposition of Ni on Ge and where initial phase formation happens. A combinatorial sputter deposition technique was used to co-deposit a range of intermixed NiGe thin films with Ge concentrations varying between 0 and 50 at.%Ge in a single deposition on both Ge (100) and inert SiO2 substrates. In situ X-ray diffraction and transmission electron microscopy where used to study phase formation. In almost the entire composition range under investigation, crystalline phases where found to be present in the as-deposited films. Between 36 and 48 at.%Ge, high-temperature hexagonal nickel germanides were found to occur metastabily below 300 °C, both on SiO2 and Ge (100) substrates. For Ge concentrations in the range between 36 and 42 at.%, this hexagonal germanide phase was even found to be present at room temperature in the as-deposited films. The results obtained in this work could provide more insight in the phase sequence of a pure Ni film on Ge.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 1.806
Times cited: 9
DOI: 10.1016/j.mee.2013.09.004
|
|
|
“Snake orbits in hybrid semiconductor/ferromagnetic devices”. Peeters FM, Reijniers J, Badalian SM, Vasilopoulos P, Microelectronic engineering 47, 405 (1999). http://doi.org/10.1016/S0167-9317(99)00245-2
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Engineering Management (ENM)
Impact Factor: 1.806
Times cited: 6
DOI: 10.1016/S0167-9317(99)00245-2
|
|
|
“HfOx as RRAM material : first principles insights on the working principles”. Clima S, Govoreanu B, Jurczak M, Pourtois G, Microelectronic engineering 120, 13 (2014). http://doi.org/10.1016/j.mee.2013.08.002
Abstract: First-principles simulations were employed to gain atomistic insights on the working principles of amorphous HfO2 based Resistive Random Access Memory stack: the nature of the defect responsible for the switching between the High and Low Resistive States has been unambiguously identified to be the substoichiometric Hf sites (commonly called oxygen vacancy-V-O) and the kinetics of the process have been investigated through the study of O diffusion. Also the role of each material layer in the TiN/HfO2/Hf/TiN RRAM stack and the impact of the deposition techniques have been examined: metallic Hf sputtering is needed to provide an oxygen exchange layer that plays the role of defect buffer. TiN shall be a good defect barrier for O but a bad defect buffer layer. A possible scenario to explain the device degradation (switching failure) mechanism has been proposed – the relaxation of the metastable amorphous phase towards crystalline structure leads to denser, more structured cluster that can increase the defect migration barriers. (C) 2013 Elsevier B.V. All rights reserved.
Keywords: A1 Journal article; Engineering sciences. Technology; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.806
Times cited: 22
DOI: 10.1016/j.mee.2013.08.002
|
|
|
“Towards CMOS-compatible single-walled carbon nanotube resonators”. Pathangi H, Cherman V, Khaled A, Sorée B, Groeseneken G, Witvrouw A, Microelectronic engineering 107, 219 (2013). http://doi.org/10.1016/j.mee.2012.06.007
Abstract: We report a totally CMOS-compatible fabrication technique to assemble horizontally suspended single-walled carbon nanotube (SWCNT) resonators. Individual SWCNTs are assembled in parallel at multiple sites by a technique called dielectrophoresis. The mechanical resonance frequencies of the suspended SWCNTs are in the range of 2035 MHz as determined from the piezoresistive response of the resonators during electrostatic actuation. The resistance of the suspended SWCNT either remains unchanged or increases or decreases significantly as a function of the actuation frequency. This can be explained by the effect the nanotube chirality has on the piezoresistive gauge factor.
Keywords: A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Impact Factor: 1.806
Times cited: 6
DOI: 10.1016/j.mee.2012.06.007
|
|
|
“Resistivity scaling in metallic thin films and nanowires due to grain boundary and surface roughness scattering”. Moors K, Sorée B, Magnus W, Microelectronic engineering 167, 37 (2017). http://doi.org/10.1016/J.MEE.2016.10.015
Abstract: A modeling approach, based on an analytical solution of the semiclassical multi-subband Boltzmann transport equation, is presented to study resistivity scaling in metallic thin films and nanowires due to grain boundary and surface roughness scattering. While taking into account the detailed statistical properties of grains, roughness and barrier material as well as the metallic band structure and quantum mechanical aspects of scattering and confinement, the model does not rely on phenomenological fitting parameters. (C) 2016 Elsevier B.V. All rights reserved.
Keywords: A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Impact Factor: 1.806
Times cited: 6
DOI: 10.1016/J.MEE.2016.10.015
|
|
|
“Material relaxation in chalcogenide OTS SELECTOR materials”. Clima S, Garbin D, Devulder W, Keukelier J, Opsomer K, Goux L, Kar GS, Pourtois G, Microelectronic engineering 215, 110996 (2019). http://doi.org/10.1016/J.MEE.2019.110996
Abstract: Nature of the mobility-gap states in amorphous Ge-rich Ge50Se50 was found to be related to homopolar Ge bonds in the chains/clusters of Ge atoms. Threshold switching material suffers Ge-Ge bond concentration drift during material ageing, which can explain the observed reliability of the aGe(50)Se(50) selector devices. Strong Ge-N bonds were introduced to alleviate the observed instability.
Keywords: A1 Journal article; Engineering sciences. Technology; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.806
Times cited: 1
DOI: 10.1016/J.MEE.2019.110996
|
|
|
“Wet etching of TiN in 1-D and 2-D confined nano-spaces of FinFET transistors”. Vereecke G, De Coster H, Van Alphen S, Carolan P, Bender H, Willems K, Ragnarsson L-A, Van Dorpe P, Horiguchi N, Holsteyns F, Microelectronic engineering 200, 56 (2018). http://doi.org/10.1016/J.MEE.2018.09.004
Abstract: In the manufacturing of multi-Vt FinFET transistors, the gate material deposited in the nano-spaces left by the removed dummy gate must be etched back in mask-defined wafer areas. Etch conformality is a necessary condition for the control of under-etch at the boundary between areas defined by masking. We studied the feasibility of TiN etching by APM (ammonia peroxide mixture, also known as SC1) in nano-confined volumes representative of FinFET transistors of the 7 nm node and below, namely nanotrenches with 1-D confinement and nanoholes with 2-D confinement. TiN etching was characterized for rate and conformality using different electron microscopy techniques. Etching in closed nanotrenches was conformal, starting and progressing all along the 2-D seam, with a rate that was 38% higher compared to a planar film. Etching in closed nanoholes proved also to be conformal and faster than planar films, but with a delay to open the 1-D seam that seemed to depend strongly on small variations in the hole diameter. However, holes between the fins at the bottom of the removed dummy gate, are not circular and do present 2-D seams that should lend themselves for an easier start of conformal etching as compared to the circular nanoholes used in this study. Finally, to explain the higher etch rate observed in nano-confined features, concentrations of ions in nanoholes were calculated taking the overlap of electrostatic double layers (EDL) into account. With negatively charged TiN walls, as measured by streaming potential on planar films, ammonium was the dominant ion in nanoholes. As no chemical reaction proposed in the literature for TiN etching matched with this finding, we proposed that the formation of ammine complexes, dissolving the formed Ti oxide, was the rate-determining step.
Keywords: A1 Journal article; Engineering sciences. Technology; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
DOI: 10.1016/J.MEE.2018.09.004
|
|
|
“A mass spectrometric study of the dissolution behavior of sanidine”. Adriaens A, Van 't dack L, Adams F, Gijbels R, Microchimica acta 120, 139 (1995). http://doi.org/10.1007/BF01244427
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 3.741
Times cited: 1
DOI: 10.1007/BF01244427
|
|
|
“Model-based quantification of EELS: is standardless quantification possible?”.Verbeeck J, Bertoni G, Microchimica acta 161, 439 (2008). http://doi.org/10.1007/s00604-008-0948-7
Abstract: Electron energy loss spectroscopy (EELS) is an ideal tool to obtain chemical information from nanoscale volumes. Quantification of the experimental spectra however has prevented for a long time access to the available information in a reliable and reproducible way. We present recent advances in model-based quantification of EELS spectra and show that we obtain the best possible precision for a given dataset, as well as remarkably good accuracies when applied to three different materials. The results are shown to be far superior over conventional quantification techniques and could hold a promise for standardless quantification of EELS spectra.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 4.58
Times cited: 5
DOI: 10.1007/s00604-008-0948-7
|
|
|
“Observation of Sb203 nanocrystals in SiO2 after Sb ion implantation”. Ignatova VA, Lebedev OI, Wätjen U, van Vaeck L, van Landuyt J, Gijbels R, Adams F, Microchimica acta 139, 77 (2002). http://doi.org/10.1007/s006040200043
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 4.58
Times cited: 3
DOI: 10.1007/s006040200043
|
|
|
“Complementary analysis of historical glass by scanning electron microscopy with energy dispersive X-ray spectroscopy and laser ablation inductiveley coupled plasma mass spectrometry”. Wagner B, Nowak A, Bulska E, Kunicki-Goldfinger J, Schalm O, Janssens K, schalm, Microchimica acta 162, 415 (2008). http://doi.org/10.1007/S00604-007-0835-7
Keywords: A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
Times cited: 28
DOI: 10.1007/S00604-007-0835-7
|
|
|
“Multianalytical study of patina formed on archaeological metal objects from Bliesbruck-Reinheim”. Wadsak M, Constantinides I, Vittiglio G, Adriaens A, Janssens K, Schreiner M, Adams FC, Brunella P, Wuttmann M, Microchimica acta 133, 159 (2000). http://doi.org/10.1007/S006040070086
Keywords: A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
Impact Factor: 4.58
DOI: 10.1007/S006040070086
|
|
|
“Application of EDXRF and thin window EPMA for the investigation of the influence of hot air heating on the generation and deposition of particulate matter”. Spolnik Z, Bencs L, Worobiec A, Kontozova V, Van Grieken R, Microchimica acta 149, 79 (2005). http://doi.org/10.1007/S00604-004-0299-Y
Keywords: A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation); Laboratory Experimental Medicine and Pediatrics (LEMP)
DOI: 10.1007/S00604-004-0299-Y
|
|
|
“Application of EPMA and XRF for the investigation of particulate pollutants in the field of cultural heritage”. Kontozova-Deutsch V, Deutsch F, Godoi RHM, Spolnik Z, Wei W, Van Grieken R, Microchimica acta 161, 465 (2008). http://doi.org/10.1007/S00604-007-0917-6
Keywords: A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
DOI: 10.1007/S00604-007-0917-6
|
|
|
“Application of thin-window EPMA to environmental problems in Hungary”. Osán J, Kurunczi S, Török S, Worobiec A, Van Grieken R, Microchimica acta 139, 111 (2002). http://doi.org/10.1007/S006040200048
Keywords: A1 Journal article; Laboratory Experimental Medicine and Pediatrics (LEMP); AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
DOI: 10.1007/S006040200048
|
|
|
“Applying digital image processing to SEM-EDX and BSE images to determine and quantify porosity and salts with depth in porous media”. Cardell C, Yebra A, Van Grieken RE, Microchimica acta 140, 9 (2002). http://doi.org/10.1007/S006040200063
Keywords: A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
DOI: 10.1007/S006040200063
|
|