Abstract: We have used differential magneto-optical (MO) imaging to investigate the mixed state of superconducting Bi2Sr2CaCu2O8+ (BSCCO) microdisks fabricated on a single-crystal sample. MO difference images of the stray field distribution over a range of out-of-plane fields allow us to distinguish between flux that is penetrating the disks and that entering the underlying BSCCO platelet. We find that flux preferentially flows along linear defects into the interstitial platelet regions up to a characteristic field Hp, above which flux enters the disks. We identify this as the field of first penetration of pancake vortices over the Bean-Livingston barrier around the disks, where Hp(T) at intermediate temperatures is well described by an exponentially decaying function with a characteristic temperature T0=19 K. At a given temperature, a minority of the disks exhibit a lower penetration field and we correlate the location of these disks with the linear defects in the BSCCO crystal.

Abstract: Transport properties of a superconducting NbN nanowire are studied experimentally and theoretically. Different attached leads (superconducting contacts) allowed us to measure current-voltage (I-V) characteristics of different segments of the wire independently. The experimental results show that with increasing the length of the segment the number of jumps in the I-V curve increases indicating an increasing number of phase-slip phenomena. The system shows a clear hysteresis in the direction of the current sweep, the size of which depends on the length of the superconducting segment. The interpretation of the experimental results is supported by theoretical simulations that are based on the time-dependent Ginzburg-Landau theory, the heat equation has been included in the Ginzbur-Landau theory.

Abstract: The properties of a two-dimensional electron are investigated in the presence of a circular step magnetic-field profile. Both electrons with parabolic dispersion as well as Dirac electrons with linear dispersion are studied. We found that in such a magnetic quantum dot no electrons can be confined. Nevertheless close to the Landau levels quasibound states can exist with a rather long lifetime.

Abstract: Antagonistic symmetries of superconducting polygons and their induced multivortex states in a homogeneous magnetic field may lead to the appearance of antivortices in the vicinity of the superconducting/normal-state boundary (where mesoscopic confinement is particularly strong). Resulting vortex-antivortex (V-Av) molecules match the sample symmetry but are extremely sensitive to defects and fluctuations and remain undetected experimentally. Here we show that V-Av states can reappear deep in the superconducting state due to an array of perforations in a polygonal setting, surrounding a central hole. Such states are no longer caused by the symmetry of the sample but rather by pinning itself, which prevents the vortex-antivortex annihilation. As a result, even micron size, clearly spaced V-Av molecules can be stabilized in large mesoscopic samples.

Abstract: The lowest energy electronic states of a donor located near a semiconductor-insulator-metal interface are investigated within the effective mass approach. The effect of the finite thickness of the insulator between the semiconductor and the metallic gate on the energy levels is studied. The lowest energy states are obtained through a variational approach, which takes into account the influence of all image charges that arise due to the presence of the metallic and the dielectric interfaces. We compare our results with a numerical exact calculation using the finite element technique.

Abstract: Transport properties in mesoscopic networks are investigated, where the strength of the (Rashba-type) spin-orbit coupling is tuned with external gate voltages. We analyze in detail to what extent the ideal behavior and functionality of some promising network-based devices are modified by random (spin-dependent) scattering events and by thermal fluctuations. It is found that although the functionality of these devices is obviously based on the quantum coherence of the transmitted electrons, there is a certain stability: moderate level of errors can be tolerated. For mesoscopic networks made of typical semiconductor materials, we found that when the energy distribution of the input carriers is narrow enough, the devices can operate close to their ideal limits even at relatively high temperature. As an example, we present results for two different networks: one that realizes a Stern-Gerlach device and another that simulates a spin quantum walker. Finally we propose a simple network that can act as a narrow band energy filter even in the presence of random scatterers.

Abstract: From a numerical solution of the Bogoliubov-de Gennes equations, we investigate an interplay of the transverse discrete modes with a longitudinal supercurrent in a metallic cylindrical superconducting nanowire. The superconductor-to-normal transition induced by a longitudinal superflow of electrons is found to occur as a cascade of jumps in the order parameter (supercurrent and superfluid density) as a function of the superfluid velocity for diameters d<1015 nm (for Al parameters) and sufficiently low temperatures T<0.30.4Tc, with Tc the critical temperature. When approaching Tc, the jumps are smoothed into steplike but continuous drops. A similar picture occurs for d>1520 nm. Only when the diameter exceeds 5070 nm the quantum-size cascades are fully washed out, and we arrive at the mesoscopic regime. Below this regime the critical current density jc exhibits the quantum-size oscillations with pronounced resonant enhancements: the smaller the diameter, the more significant is the enhancement. Thickness fluctuations of real samples will smooth out such oscillations into an overall growth of jc with decreasing nanowire diameter.

Abstract: Starting from an empirical force constant model of valence interactions and calculating by Ewalds method the ion-ion force constants, we derive the dynamical matrix for a monolayer crystal of hexagonal boron nitride (h-BN). The phonon dispersion relations are calculated. The interplay between valence and Coulomb forces is discussed. It is shown by analytical methods that the longitudinal and the transverse optical (LO and TO) phonon branches for in-plane motion are degenerate at the Γ point of the Brillouin zone. Away from Γ, the LO branch exhibits pronounced overbending. It is found that the nonanalytic Coulomb contribution to the dynamical matrix causes a linear increase of the LO branch with increasing wave vector starting at Γ. This effect is general for two-dimensional (2D) ionic crystals. Performing a long-wavelength expansion of the dynamical matrix, we use Borns perturbation method to calculate the elastic constants (tension coefficients). Since the crystal is noncentrosymmetric, internal displacements due to relative shifts between the two sublattices (B and N) contribute to the elastic constants. These internal displacements are responsible for piezoelectric and dielectric phenomena. The piezoelectric stress constant and the dielectric susceptibility of 2D h-BN are calculated.

Abstract: Cerium-doped manganite thin films were grown epitaxially by pulsed laser deposition at 720 °C and oxygen pressure pO2=125 Pa and were subjected to different annealing steps. According to x-ray diffraction (XRD) data, the formation of CeO2 as a secondary phase could be avoided for pO28 Pa. However, transmission electron microscopy shows the presence of CeO2 nanoclusters even in those films which appear to be single phase in XRD. With O2 annealing, the metal-to-insulator transition temperature increases, while the saturation magnetization decreases and stays well below the theoretical value for electron-doped La0.7Ce0.3MnO3 with mixed Mn3+/Mn2+ valences. The same trend is observed with decreasing film thickness from 100 to 20 nm, indicating a higher oxygen content for thinner films. Hall measurements on a film which shows a metal-to-insulator transition clearly reveal holes as dominating charge carriers. Combining data from x-ray photoemission spectroscopy, for determination of the oxygen content, and x-ray absorption spectroscopy (XAS), for determination of the hole concentration and cation valences, we find that with increasing oxygen content the hole concentration increases and Mn valences are shifted from 2+ to 4+. The dominating Mn valences in the films are Mn3+ and Mn4+, and only a small amount of Mn2+ ions can be observed by XAS. Mn2+ and Ce4+ XAS signals obtained in surface-sensitive total electron yield mode are strongly reduced in the bulk-sensitive fluorescence mode, which indicates hole-doping in the bulk for those films which do show a metal-to-insulator transition.

Abstract: Using numerical simulations, we study the dynamic properties of a superconducting stripe with a perpendicular magnetized ferromagnet on top in the presence of an applied dc current. In the resistive state conventional phase-slip lines are transformed into kinematic vortex-antivortex pairs with special dynamic behavior. In addition, the location of phase slippage in the sample is predetermined by the position of the magnetic dot. Both these effects directly influence the dynamics of the superconducting condensate and lead to periodic oscillations of the voltage across the sample with a frequency tunable both by the applied current and by the magnetization of the magnet. We found that the frequency of the voltage oscillations increases with increasing number of magnetic dots.

Abstract: In this paper we investigate the basic physics of charge carriers (electrons) leaking out of the inversion layer of a metal-oxide-semiconductor capacitor with a biased gate. In particular, we treat the gate leakage current as resulting from two combined processes: (1) the time-dependent decay of electron wave packets representing the inversion-layer charge and (2) the local generation of new electrons replacing those that have leaked away. As a result, the gate current simply emerges as the ratio of the total charge in the inversion layer to the tunneling lifetime. The latter is extracted from the quantum dynamics of the decaying wave packets, while the generation rate is incorporated as a phenomenological source term in the continuity equation. Not only do the gate currents calculated with this model agree very well with experiment, the model also provides an onset to solve the paradox of the current-free bound states representing the resonances of the Schrödinger equation that governs the fully coupled metal-oxide-semiconductor system.

Abstract: The time evolution of a wave packet injected into a semiconductor quantum ring is investigated in order to obtain the transmission and reflection probabilities. Within the effective-mass approximation, the time-dependent Schrödinger equation is solved for a system with nonzero width of the ring and leads and finite potential-barrier heights, where we include smooth lead-ring connections. In the absence of a magnetic field, an analysis of the projection of the wave function over the different subband states shows that when the injected wave packet is within a single subband, the junction can scatter this wave packet into different subbands but remarkably at the second junction the wave packet is scattered back into the subband state of the incoming wave packet. If a magnetic field is applied perpendicularly to the ring plane, transmission and reflection probabilities exhibit Aharonov-Bohm (AB) oscillations and the outgoing electrons may end up in different subband states from those of the incoming electrons. Localized impurities, placed in the ring arms, influence the AB oscillation period and amplitude. For a single impurity or potential barrier of sufficiently strong strength, the period of the AB oscillations is halved while for two impurities localized in diametrically opposite points of the ring, the original AB period is recovered. A theoretical investigation of the confined states and time evolution of wave packets in T wires is also made, where a comparison between this system and the lead-ring junction is drawn.

Abstract: We modeled the electron and hole states in Si/SiO2 quantum wells within a basis of standing waves using the 30-band k . p theory. The hard-wall confinement potential is assumed, and the influence of the peculiar band structure of bulk silicon on the quantum-well sub-bands is explored. Numerous spurious solutions in the conduction-band and valence-band energy spectra are found and are identified to be of two types: (1) spurious states which have large contributions of the bulk solutions with large wave vectors (the high-k spurious solutions) and (2) states which originate mainly from the spurious valley outside the Brillouin zone (the extravalley spurious solutions). An algorithm to remove all those nonphysical solutions from the electron and hole energy spectra is proposed. Furthermore, slow and oscillatory convergence of the hole energy levels with the number of basis functions is found and is explained by the peculiar band mixing and the confinement in the considered quantum well. We discovered that assuming the hard-wall potential leads to numerical instability of the hole states computation. Nonetheless, allowing the envelope functions to exponentially decay in a barrier of finite height is found to improve the accuracy of the computed hole states.

Abstract: We address the nature of the disordered state that results from the adsorption of adatoms in graphene. For adatoms that sit at the center of the honeycomb plaquette, as in the case of most transition metals, we show that the ones that form a zero-energy resonant state lead to Anderson localization in the vicinity of the Dirac point. Among those, we show that there is a symmetry class of adatoms where Anderson localization is suppressed, leading to an exotic metallic state with large and rare charge droplets, that localizes only at the Dirac point. We identify the experimental conditions for the observation of the Anderson transition for adatoms in graphene.

Abstract: The adsorption characteristics of alkali, alkaline-earth, and transition metal adatoms on silicene, a graphene-like monolayer structure of silicon are analyzed by means of first-principles calculations. In contrast to graphene, interaction between the metal atoms and the silicene surface is quite strong due to its highly reactive buckled hexagonal structure. In addition to structural properties, we also calculate the electronic band dispersion, net magnetic moment, charge transfer, work function, and dipole moment of the metal adsorbed silicene sheets. Alkali metals, Li, Na, and K, adsorb to hollow sites without any lattice distortion. As a consequence of the significant charge transfer from alkalis to silicene, metalization of silicene takes place. Trends directly related to atomic size, adsorption height, work function, and dipole moment of the silicene/alkali adatom system are also revealed. We found that the adsorption of alkaline-earth metals on silicene is entirely different from their adsorption on graphene. The adsorption of Be, Mg, and Ca turns silicene into a narrow gap semiconductor. Adsorption characteristics of eight transition metals Ti, V, Cr, Mn, Fe, Co, Mo, and W are also investigated. As a result of their partially occupied d orbital, transition metals show diverse structural, electronic, and magnetic properties. Upon the adsorption of transition metals, depending on the adatom type and atomic radius, the system can exhibit metal, half-metal, and semiconducting behavior. For all metal adsorbates, the direction of the charge transfer is from adsorbate to silicene, because of its high surface reactivity. Our results indicate that the reactive crystal structure of silicene provides a rich playground for functionalization at nanoscale. DOI: 10.1103/PhysRevB.87.085423