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Role of Ar2+ and Ar+2 ions in a direct current argon glow discharge: a numerical description”. Bogaerts A, Gijbels R, Journal of applied physics 86, 4124 (1999). http://doi.org/10.1063/1.371337
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Role of the fast Ar atoms, Ar+ ions and metastable Ar atoms in a hollow cathode glow discharge: study by a hybrid model”. Baguer N, Bogaerts A, Gijbels R, Journal of applied physics 94, 2212 (2003). http://doi.org/10.1063/1.1594276
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Rotating cylindrical magnetron sputtering: simulation of the reactive process”. Depla D, Li XY, Mahieu S, van Aeken K, Leroy WP, Haemers J, de Gryse R, Bogaerts A, Journal of applied physics 107, 113307 (2010). http://doi.org/10.1063/1.3415550
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Sharpening the shape distribution of gold nanoparticles by laser irradiation”. Resta V, Siegel J, Bonse J, Gonzalo J, Afonso CN, Piscopiello E, Van Tenedeloo G;, Journal of applied physics 100, Doi: 10.1063/1.2358822 (2006). http://doi.org/10.1063/1.2358822
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A simplified quantum mechanical model for nanowire transistors based on non-linear variational calculus”. Carrillo-Nuñez H, Magnus W, Peeters FM, Journal of applied physics 108, 063708 (2010). http://doi.org/10.1063/1.3476297
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The size and structure of Ag particles responsible for surface plasmon effects and luminescence in Ag homogeneously doped bulk glass”. Shestakov MV, Meledina M, Turner S, Tikhomirov VK, Verellen N, Rodríguez VD, Velázquez JJ, Van Tendeloo G, Moshchalkov VV, Journal of applied physics 114, 073102 (2013). http://doi.org/10.1063/1.4818830
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Size distribution and magnetic behavior of lead inclusions in silicon single crystals”. Milants K, Verheyden J, Barancira T, Deweerd W, Pattyn H, Bukshpan S, Williamson DL, Vermeiren F, Van Tendeloo G, Vlekken C, Libbrecht S, van Haesendonck C, Journal of applied physics 81, 2148 (1997)
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Space charge corrected electron emission from an aluminum surface under non-equilibrium conditions”. Wendelen W, Mueller BY, Autrique D, Rethfeld B, Bogaerts A, Journal of applied physics 111, 113110 (2012). http://doi.org/10.1063/1.4729071
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Spatial behavior of energy relaxation of electrons in capacitively coupled discharges: comparison between Ar and SiH4”. Yan M, Bogaerts A, Gijbels R, Goedheer WJ, Journal of applied physics 87, 3628 (2000). http://doi.org/10.1063/1.372392
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Spin transport in a Mn-doped ZnSe asymmetric tunnel structure”. Papp G, Borza S, Peeters FM, Journal of applied physics 97, 113901 (2005). http://doi.org/10.1063/1.1861520
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Strain and band edges in single and coupled cylindrical InAs/GaAs and InP/InGaP self-assembled quantum dots”. Tadić, M, Peeters FM, Janssens KL, Korkusinski M, Hawrylak P, Journal of applied physics 92, 5819 (2002). http://doi.org/10.1063/1.1510167
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Structural defects and epitaxial rotation of C60 and C70 (111) films on GeS(001)”. Bernaerts D, Van Tendeloo G, Amelinckx S, Hevesi K, Gensterblum G, Yu LM, Pireaux JJ, Grey F, Bohr J, Journal of applied physics 80, 3310 (1996). http://doi.org/10.1063/1.363241
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Structure and properties of artificial [(La0.7Sr0.3MnO3)m(SrTiO3)n]15 superlattices on (001)SrTiO3”. Lebedev OI, Verbeeck J, Van Tendeloo G, Dubourdieu C, Rosina M, Chaudouët P, Journal of applied physics 94, 7646 (2003). http://doi.org/10.1063/1.1628407
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Structure and properties of the YBa2Cu3O7-x/LaAlO3 superlattices”. Lebedev OI, Hamet JF, Van Tendeloo G, Beaumont V, Raveau B, Journal of applied physics 90, 5261 (2001). http://doi.org/10.1063/1.1406963
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Structure of epitaxial Ca2Fe2O5 films deposited on different perovskite-type substrates”. Rossell MD, Lebedev OI, Van Tendeloo G, Hayashi N, Terashima T, Takano M, Journal of applied physics 95, 5145 (2004). http://doi.org/10.1063/1.1689003
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Study of a hollow cathode glow discharge in He: Monte Carlo-fluid model combined with a transport model for the metastable atoms”. Baguer N, Bogaerts A, Gijbels R, Journal of applied physics 93, 47 (2003). http://doi.org/10.1063/1.1518784
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Study of the Ar metastable atom population in a hollow cathode discharge by means of a hybrid model and spectrometric measurements”. Baguer N, Bogaerts A, Donko Z, Gijbels R, Sadeghi N, Journal of applied physics 97, 123305 (2005). http://doi.org/10.1063/1.1929857
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Study of the sputtered Cu atoms and Cu+ ions in a hollow cathode glow discharge using a hybrid model”. Baguer N, Bogaerts A, Journal of applied physics 98, 033303 (2005). http://doi.org/10.1063/1.2005381
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Tensile strained Ge tunnel field-effect transistors: k\cdot p material modeling and numerical device simulation”. Kao K-H, Verhulst AS, Van de Put M, Vandenberghe WG, Sorée B, Magnus W, De Meyer K, Journal of applied physics 115, 044505 (2014). http://doi.org/10.1063/1.4862806
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Terahertz plasmon-polariton modes in graphene driven by electric field inside a Fabry-Perot cavity”. Zhao CX, Xu W, Li LL, Zhang C, Peeters FM, Journal of applied physics 117, 223104 (2015). http://doi.org/10.1063/1.4922401
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Theoretical investigation of CoSi2/Si1-xGex detectors: influence of a Si tunneling barrier on the electro-optical characteristics”. Chu DP, Peeters FM, Kolodinski S, Roca E, Journal of applied physics 79, 1151 (1996)
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Theoretical study of electronic transport properties of a graphene-silicene bilayer”. Berdiyorov GR, Bahlouli H, Peeters FM, Journal of applied physics 117, 225101 (2015). http://doi.org/10.1063/1.4921877
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Time-dependent investigation of charge injection in a quantum dot containing one electron”. de Sousa JS, Covaci L, Peeters FM, Farias GA, Journal of applied physics 112, 093705 (2012). http://doi.org/10.1063/1.4759292
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Tunable giant magnetoresistance with magnetic barriers”. Papp G, Peeters FM, Journal of applied physics 100, 043707 (2006). http://doi.org/10.1063/1.2266301
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Unraveling the deposition mechanism in a-C:H thin-film growth: a molecular-dynamics study for the reaction behavior of C3 and C3H radicals with a-C:H surfaces”. Neyts E, Bogaerts A, van de Sanden MCM, Journal of applied physics 99, 014902 (2006). http://doi.org/10.1063/1.2150149
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Zener tunneling in semiconductors under nonuniform electric fields”. Vandenberghe W, Sorée B, Magnus W, Groeseneken G, Journal of applied physics 107, 054520 (2010). http://doi.org/10.1063/1.3311550
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Ab-initio study of the segregation and electronic properties of neutral and charged B and P dopants in Si and Si/SiO2 nanowires”. Schoeters B, Leenaerts O, Pourtois G, Partoens B, Journal of applied physics 118, 104306 (2015). http://doi.org/10.1063/1.4930048
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Phase formation and texture of thin nickel germanides on Ge(001) and Ge(111)”. De Schutter B, Van Stiphout K, Santos NM, Bladt E, Jordan-Sweet J, Bals S, Lavoie C, Comrie CM, Vantomme A, Detavernier C, Journal of applied physics 119, 135305 (2016). http://doi.org/10.1063/1.4945317
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First-principles study of the optoelectronic properties and photovoltaic absorber layer efficiency of Cu-based chalcogenides”. Sarmadian N, Saniz R, Partoens B, Lamoen D, Journal of applied physics 120, 085707 (2016). http://doi.org/10.1063/1.4961562
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First-principles thermodynamics and defect kinetics guidelines for engineering a tailored RRAM device”. Clima S, Chen YY, Chen CY, Goux L, Govoreanu B, Degraeve R, Fantini A, Jurczak M, Pourtois G, Journal of applied physics 119, 225107 (2016). http://doi.org/10.1063/1.4953673
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