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“Single crystalline GaN grown on porous Si(111) by MOVPE”. Cheng K, Degroote S, Leys M, van Daele B, Germain M, Van Tendeloo G, Borghs G, Physica status solidi: C: conferences and critical reviews 4, 1908 (2007). http://doi.org/10.1002/pssc.200674316
Abstract: In this work, GaN growth on porous Si(111) will be reported. The porosity of the substrates was 30% or 50%. In the latter case, various thicknesses, from 0.6 mu m to 10 mu m, were investigated. The morphology of the GaN surfaces was analyzed by optical interference microscopy. The crystalline quality of the epitaxial layers was characterized by High Resolution X-Ray Diffraction (HR-XRD) and cross-sectional Transmission Electron Microscopy (TEM). A Full Width at Half Maximum (FWHM) of the X-ray symmetric rocking curve (0002) 2 theta – omega scan of 290 arc see was obtained for a 1 mu m thick GaN layer, which is comparable with that of GaN grown on bulk Si(111) substrates. (c) 2007 WILEY-VCH Verlag GmbH Co. KGaA, Weinheim.
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
Times cited: 2
DOI: 10.1002/pssc.200674316
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“Bipolaron stability in an ellipsoidal potential well”. Pokatilov EP, Croitoru MD, Fomin VM, Devreese JT, Physica status solidi: B: basic research 237, 244 (2003). http://doi.org/10.1002/pssb.200301785
Keywords: A1 Journal article; Theory of quantum systems and complex systems; Condensed Matter Theory (CMT); Electron microscopy for materials research (EMAT)
Impact Factor: 1.674
Times cited: 7
DOI: 10.1002/pssb.200301785
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“Lattice deformations in quasi-dynamic strain glass visualised and quantified by aberration corrected electron microscopy”. Lu J, Martinez GT, Van Aert S, Schryvers D, Physica status solidi: B: basic research 251, 2034 (2014). http://doi.org/10.1002/pssb.201350351
Abstract: Advanced transmission electron microscopy and statistical parameter estimated quantification procedures were applied to study the room temperature quasi-dynamical strain glass state in NiTi alloys. Nanosized strain pockets are visualised and the displacements of the atom columns are quantified. A comparison is made with conventional high-resolution transmission electron microscopy images of point defect induced strains in NiAl alloys.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.674
Times cited: 2
DOI: 10.1002/pssb.201350351
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“Mobility collapse in undoped and Si-doped GaN grown by LP-MOVPE”. Bougrioua Z, Farvacque J-L, Moerman I, Demeester P, Harris JJ, Lee K, Van Tendeloo G, Lebedev O, Trush EJ, Physica status solidi: B: basic research 216, 571 (1999). http://doi.org/10.1002/(SICI)1521-3951(199911)216:1<571::AID-PSSB571>3.0.CO;2-K
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.674
Times cited: 13
DOI: 10.1002/(SICI)1521-3951(199911)216:1<571::AID-PSSB571>3.0.CO;2-K
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“Moore's law: new playground for quantum physics”. van Rossum M, Schoenmaker W, Magnus W, de Meyer K, Croitoru MD, Gladilin VN, Fomin VM, Devreese JT, Physica status solidi: B: basic research 237, 426 (2003). http://doi.org/10.1002/pssb.200301788
Keywords: A1 Journal article; Theory of quantum systems and complex systems; Condensed Matter Theory (CMT); Electron microscopy for materials research (EMAT)
Impact Factor: 1.674
Times cited: 2
DOI: 10.1002/pssb.200301788
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“Relation between microstructure and 2DEG properties of AlGaN/GaN structures”. van Daele B, Van Tendeloo G, Germain M, Leys M, Bougrioua Z, Moerman I, Physica status solidi: B: basic research 234, 830 (2002). http://doi.org/10.1002/1521-3951(200212)234:3<830::AID-PSSB830>3.0.CO;2-O
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.674
Times cited: 1
DOI: 10.1002/1521-3951(200212)234:3<830::AID-PSSB830>3.0.CO;2-O
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“Review on TEM analysis of growth twins in nanocrystalline palladium thin films : toward better understanding of twin-related mechanisms in high stacking fault energy metals”. Idrissi H, Amin-Ahmadi B, Wang B, Schryvers D, Physica status solidi: B: basic research 251, 1111 (2014). http://doi.org/10.1002/pssb.201350161
Abstract: Various modes of transmission electron microscopy including aberration corrected imaging were used in order to unravel the fundamental mechanisms controlling the formation of growth twins and the evolution of twin boundaries under mechanical and hydrogen loading modes in nanocrystalline (nc) palladium thin films. The latter were produced by electron-beam evaporation and sputter deposition and subjected to uniaxial tensile deformation as well as hydriding/dehydriding cycles. The results show that the twins form by dissociation of grain boundaries. The coherency of Σ3{111} coherent twin boundaries considerably decreases with deformation due to dislocation/twin boundary interactions while Σ3{112} incoherent twin boundaries dissociate under hydrogen cycling into two-phase boundaries bounding a new and unstable 9R phase. The effect of these elementary mechanisms on the macroscopic behavior of the palladium films is discussed and compared to recent experimental and simulation works in the literature. The results provide insightful information to guide the production of well-controlled population of growth twins in high stacking fault energy nc metallic thin films. The results also indicate directions for further enhancement of the mechanical properties of palladium films as needed for instance in palladium-based membranes in hydrogen applications.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.674
Times cited: 7
DOI: 10.1002/pssb.201350161
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“Correlation of microstructure and magnetotransport properties of epitaxially grown La-Ca-Mn-O3 thin films”. Habermeier HU, Razavi F, Lebedev O, Gross GM, Praus R, Zhang PX, Physica status solidi: B: basic research
T2 –, International Conference on Solid State Spectroscopy –, (ICSSS), SEP 05-07, 1999, SCHWABISCH-GMUND, GERMANY 215, 679 (1999). http://doi.org/10.1002/(SICI)1521-3951(199909)215:1<679::AID-PSSB679>3.0.CO;2-H
Abstract: We have investigated epitaxially grown single-crystalline Ca-doped LaMnO3 thin films using the pulsed laser deposition technique in a case study aimed to explore the possibilities buried in epitaxial stress tailoring in order to control the transport properties of CMR materials beyond the limits set by equilibrium thermodynamics. Depending on the film thickness there is an abrupt transition from pseudomorphic to epitaxial granular growth observable which is related to the epitaxial strain of the films. This is associated with microscopic stress relaxation and leads to well controllable modifications of the atomic arrangements of the Mn-O sublattice in the films. Due to the interrelation of double exchange, spin-, charge- and orbital ordering and the Jahn-Teller effect mediated coupling of the electronic system to the crystal lattice, the magnetotransport properties of the firms can be modified in a controllable way.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.674
Times cited: 3
DOI: 10.1002/(SICI)1521-3951(199909)215:1<679::AID-PSSB679>3.0.CO;2-H
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“Atomic imaging of cage like structures of silicon”. Nistor L, Van Tendeloo G, Amelinckx S, Cros C, Physica status solidi: A: applied research 146, 119 (1994). http://doi.org/10.1002/pssa.2211460111
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 12
DOI: 10.1002/pssa.2211460111
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“Dislocation distributions in brown diamond”. Willems B, Martineau PM, Fisher D, van Royen J, Van Tendeloo G, Physica status solidi: A: applied research 203, 3076 (2006). http://doi.org/10.1002/pssa.200671129
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.775
Times cited: 21
DOI: 10.1002/pssa.200671129
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“Electron microscopy and mass-spectrometry study of In GaAsP/InP heterostructures (p-i-n diodes) grown by liquid phase epitaxy”. Volkov VV, Luyten W, van Landuyt J, Férauge C, Oksenoid KG, Gijbels R, Vasilev MG, Shelyakin AA, Lazarev VB, Physica status solidi: A: applied research 140, 73 (1993). http://doi.org/10.1002/pssa.2211400105
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Times cited: 7
DOI: 10.1002/pssa.2211400105
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“Electron microscopy and mass-spectrometry study of In0.72Ga0.28As0.62P0.38 lasers grown by liquid phase epitaxy”. Luyten W, Volkov VV, van Landuyt J, Amelinckx S, Férauge C, Gijbels R, Vasilev MG, Shelyakin AA, Lazarev VB, Physica status solidi: A: applied research 140, 453 (1993). http://doi.org/10.1002/pssa.2211400216
Abstract: Broad area as well as buried heterostructure lasers based on In0.72Ga0.28As0.62P0.38/InP and emitting at 1.3 mum are grown by liquid phase epitaxy and are studied in detail by means of transmission electron microscopy, X-ray diffraction, secondary ion mass-spectrometry, and electroluminescence. The InGaAsP epilayer is found to be well lattice-matched and of good structural quality. A tentative explanation is presented for the spinodal decomposition observed in the InGaAsP alloy. We also report on the high performance characteristics of the infrared lasers.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Times cited: 3
DOI: 10.1002/pssa.2211400216
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“Extended defects formation in Si crystals by clustering of intrinsic point defects studied by in-situ irradiation in an HREM”. Fedina L, Gutakovskii A, Aseev A, van Landuyt J, Vanhellemont J, Physica status solidi: A: applied research 171, 147 (1999)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 40
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“First-principles characterization of amorphous carbon nitride systems: structural and electronic properties”. Titantah JT, Lamoen D, Physica status solidi: A: applied research 203, 3191 (2006). http://doi.org/10.1002/pssa.200671107
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.775
Times cited: 3
DOI: 10.1002/pssa.200671107
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“Growth of R1+xBa2-xCu3O7-\delta epitaxial films investigated by in situ scanning tunneling microscopy”. Salluzzo M, Aruta C, Maggio-Aprile I, Fischer Ø, Bals S, Zegenhagen J, Physica status solidi: A: applied research 186, 339 (2001). http://doi.org/10.1002/1521-396X(200108)186:3<339::AID-PSSA339>3.0.CO;2-5
Abstract: The problem of the epitaxial growth of the high temperature superconducting R1+xBa2xCu3O7δ (R = Y or rare earth except Ce and Tb) films has been addressed. Using in situ ultra high vacuum Scanning Tunneling Microscopy (UHV-STM) we have studied the role of cationic substitution and substrate mismatch on the growth mode of stoichiometric and Nd-rich Nd1+xBa2xCu3O7δ thin films. The results are compared to the growth of Y1Ba2Cu3O7δ, Dy1Ba2Cu3O7δ and Gd1Ba2Cu3O7δ epitaxial films. Two main phenomena are investigated: a) the first stage of the direct nucleation on the substrate and b) the crossover between 2D and 3D growth upon increasing the film thickness. At the first stage of the growth, pseudo-cubic perovskite (Re,Ba)CuO3 nuclei are formed. While they disappear after the growth of a few nm in stoichiometric films, they persist on the surface of Nd-rich films of up to 110 nm thickness. Stoichiometric R1+xBa2xCu3O7δ films exhibit a rough morphology with increasing thickness due to island growth mode, whereas Nd-rich films remain smooth and continue to grow layer by layer. It is proposed that linear defects (like anti-phase boundaries), which are formed due to the misalignment of growth fronts, are the source of screw dislocations in stoichiometric films. In Nd-rich films, linear defects are eliminated through the insertion of (Nd,Ba)CuO3 extra layers without introduction of any screw dislocations.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 17
DOI: 10.1002/1521-396X(200108)186:3<339::AID-PSSA339>3.0.CO;2-5
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“HRTEM studies of dislocations in cubic BN”. Nistor LC, Van Tendeloo G, Dincã, G, Physica status solidi: A: applied research 201, 2578 (2004). http://doi.org/10.1002/pssa.200405192
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 8
DOI: 10.1002/pssa.200405192
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“In-situ HVEM study of dislocation generation in patterned stress fields at silicon surfaces”. Vanhellemont J, Claeys C, van Landuyt J, Physica status solidi: A: applied research 150, 497 (1995). http://doi.org/10.1002/pssa.2211500144
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 6
DOI: 10.1002/pssa.2211500144
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“Modification of the multislice method for calculating coherent STEM images”. Chen JH, van Dyck D, op de Beeck M, Broeckx J, van Landuyt J, Physica status solidi: A: applied research 150, 13 (1995). http://doi.org/10.1002/pssa.2211500103
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Times cited: 5
DOI: 10.1002/pssa.2211500103
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“New erbium silicide superstructures: a study by high resolution electron microscopy”. Frangis N, Van Tendeloo G, van Landuyt J, Kaltsas G, Travlos A, Nassiopoulos AG, Physica status solidi: A: applied research 158, 107 (1996)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 6
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“Oxygen and fluorine doping in Sr2MnGaO5 brownmillerite”. Antipov EV, Abakumov AM, Alekseeva AM, Rozova MG, Hadermann J, Lebedev OI, Van Tendeloo G, Physica status solidi: A: applied research 201, 1403 (2004). http://doi.org/10.1002/pssa.200304428
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 9
DOI: 10.1002/pssa.200304428
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“A peculiar diffraction effect in FCC crystals of C60”. Amelinckx S, van Heurck C, van Dyck D, Van Tendeloo G, Physica status solidi: A: applied research 131, 589 (1992). http://doi.org/10.1002/pssa.2211310231
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Times cited: 13
DOI: 10.1002/pssa.2211310231
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“Strain mapping around dislocations in diamond and cBN”. Willems B, Nistor L, Ghica C, Van Tendeloo G, Physica status solidi: A: applied research 202, 2224 (2005). http://doi.org/10.1002/pssa.200561923
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 4
DOI: 10.1002/pssa.200561923
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“Structural aspects of CVD idamond wafers grown at different hydrogen flow rates”. Nistor L, van Landuyt J, Ralchenko V, Physica status solidi: A: applied research 171, 5 (1999). http://doi.org/10.1002/(SICI)1521-396X(199907)174:1<5::AID-PSSA5>3.3.CO;2-3
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 15
DOI: 10.1002/(SICI)1521-396X(199907)174:1<5::AID-PSSA5>3.3.CO;2-3
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“A technique for the sp2/sp3 characterization of carbon materials”. Titantah JT, Lamoen D, Physica status solidi: A: applied research 201, 2492 (2004). http://doi.org/10.1002/pssa.200405176
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 2
DOI: 10.1002/pssa.200405176
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“TEM study on precipitation behavior in Cu-Co alloys”. Takeda M, Suzuki N, Shinohara G, Endo T, van Landuyt J, Physica status solidi: A: applied research 168, 27 (1998). http://doi.org/10.1002/(SICI)1521-396X(199807)168:1<27::AID-PSSA27>3.0.CO;2-S
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 18
DOI: 10.1002/(SICI)1521-396X(199807)168:1<27::AID-PSSA27>3.0.CO;2-S
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“Why does polycrystalline natural diamond turn black after annealing?”.Willems B, de Corte K, Van Tendeloo G, Physica status solidi: A: applied research 201, 2486 (2004). http://doi.org/10.1002/pssa.200405178
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 10
DOI: 10.1002/pssa.200405178
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“Extended defects formation in Si crystals by clustering of intrinsic point defects studied by in-situ electron irradiation in an HREM”. Fedina L, Gutakovskii A, Aseev A, van Landuyt J, Vanhellemont J, Physica status solidi: A: applied research
T2 –, International Conference on Extended Defects in Semiconductors (EDS 98), Sept. 06-11, 1998, Jaszowiec, Poland 171, 147 (1999). http://doi.org/10.1002/(SICI)1521-396X(199901)171:1<147::AID-PSSA147>3.0.CO;2-U
Abstract: In situ irradiation experiments in a high resolution electron microscope JEOL-4000EX at room temperature resulted in discovery of the isolated and combined clustering of vacancies and self-interstitial atoms on {111}- and {113}-habit planes both leading to an extended defect formation in Si crystals. The type of the defect is strongly affected by the type of supersaturation of point defects depending on the crystal thickness during electron irradiation. Because of the existence of energy barriers against recombination of interstitials with the extended aggregates of vacancies, a large family of intermediate defect configurations (IDCs) is formed on {113}- and {111}-habit planes at a low temperature under interstitial supersaturation in addition to the well-known {133}-defects of interstitial type. The formation of metastable IDCs inside vacancy aggregates prevents a way of recombination of defects in extended shape.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 40
DOI: 10.1002/(SICI)1521-396X(199901)171:1<147::AID-PSSA147>3.0.CO;2-U
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“Electron-diffraction evidence for ordering of interstitial silver ions in silver bromide microcrystals”. Goessens C, Schryvers D, van Dyck D, van Landuyt J, de Keyzer R, Physica status solidi: A 143, 277 (1994). http://doi.org/10.1002/pssa.2211430211
Abstract: The occurrence and origin of diffuse intensity contours in electron micrographs of AgBr crystals are investigated. The observations are interpreted in terms of a model, which attributes diffuse scattering to the presence of predominant atom or vacancy clusters of a particular polyhedral type. It is shown that irrespective of the crystal morphology, interstitial Ag ions order in AgBr material in clusters of finite size along 001 type planes. A different geometry of the diffuse intensity locus observed for triangular and hexagonal tabular grains is explained in terms of the different twin plane morphology of these grains.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Times cited: 7
DOI: 10.1002/pssa.2211430211
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“Stabilization of the Perovskite Phase in the Y-Bi-O System By Using a BaBiO3 Buffer Layer”. Bouwmeester RL, de Hond K, Gauquelin N, Verbeeck J, Koster G, Brinkman A, Physica Status Solidi-Rapid Research Letters 13, 1970028 (2019). http://doi.org/10.1002/pssr.201970028
Abstract: A topological insulating phase has theoretically been predicted for the thermodynamically unstable perovskite phase of YBiO3. Here, it is shown that the crystal structure of the Y-Bi-O system can be controlled by using a BaBiO3 buffer layer. The BaBiO3 film overcomes the large lattice mismatch with the SrTiO3 substrate by forming a rocksalt structure in between the two perovskite structures. Depositing an YBiO3 film directly on a SrTiO3 substrate gives a fluorite structure. However, when the Y–Bi–O system is deposited on top of the buffer layer with the correct crystal phase and comparable lattice constant, a single oriented perovskite structure with the expected lattice constants is observed.
Keywords: A1 Journal Article; Electron Microscopy for Materials Science (EMAT) ;
Impact Factor: 3.032
DOI: 10.1002/pssr.201970028
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“On the importance of the work function and electron carrier density of oxide electrodes for the functional properties of ferroelectric capacitors”. Wang J, Nguyen MD, Gauquelin N, Verbeeck J, Do MT, Koster G, Rijnders G, Houwman E, Physica Status Solidi-Rapid Research Letters 14, 1900520 (2020). http://doi.org/10.1002/PSSR.201900520
Abstract: It is important to understand the effect of the interfaces between the oxide electrode layers and the ferroelectric layer on the polarization response for optimizing the device performance of all-oxide ferroelectric devices. Herein, the effects of the oxide La0.07Ba0.93SnO3 (LBSO) as an electrode material in an PbZr0.52Ti0.48O3 (PZT) ferroelectric capacitor are compared with those of the more commonly used SrRuO3 (SRO) electrode. SRO (top)/PZT/SRO (bottom), SRO/PZT/LBSO, and SRO/PZT/2 nm SRO/LBSO devices are fabricated. Only marginal differences in crystalline properties, determined by X-ray diffraction and scanning transmission electron microscopy, are found. High-quality polarization loops are obtained, but with a much larger coercive field for the SRO/PZT/LBSO device. In contrast to the SRO/PZT/SRO device, the polarization decreases strongly with increasing field cycling. This fatigue problem can be remedied by inserting a 2 nm SRO layer between PZT and LBSO. It is argued that strongly increased charge injection into the PZT occurs at the bottom interface, because of the low PZT/LBSO interfacial barrier and the much lower carrier density in LBSO, as compared with that in SRO, causing a low dielectric constant, depleted layer in LBSO. The charge injection creates a trapped space charge in the PZT, causing the difference in fatigue behavior.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.8
Times cited: 6
DOI: 10.1002/PSSR.201900520
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