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Bogaerts, A.; Snoeckx, R.; Trenchev, G.; Wang, W. |
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Title |
Modeling for a Better Understanding of Plasma-Based CO2 Conversion |
Type |
H1 Book Chapter |
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Year |
2018 |
Publication ![sorted by Publication field, ascending order (up)](img/sort_asc.gif) |
Plasma Chemistry and Gas Conversion |
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Keywords |
H1 Book Chapter; Plasma, laser ablation and surface modeling Antwerp (PLASMANT) ; |
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Abstract |
This chapter discusses modeling efforts for plasma-based CO2 conversion, which are needed to obtain better insight in the underlying mechanisms, in order to improve this application. We will discuss two types of (complementary) modeling efforts that are most relevant, that is, (i) modeling of the detailed plasma chemistry by zero-dimensional (0D) chemical kinetic models and (ii) modeling of reactor design, by 2D or 3D fluid dynamics models. By showing some characteristic calculation results of both models, for CO2 splitting and in combination with a H-source, and for packed bed DBD and gliding arc plasma, we can illustrate the type of information they can provide. |
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IntechOpen |
Place of Publication |
Rijeka |
Editor |
Britun, N.; Silva, T. |
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Wos |
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Publication Date |
2018-12-19 |
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UA library record |
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Most recent IF: NA |
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Call Number |
PLASMANT @ plasmant @ Bogaerts18c:irua:155915 |
Serial |
5142 |
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Author |
Lujan, G.S.; Magnus, W.; Soree, B.; Pourghaderi, M.A.; Veloso, A.; van Dal, M.J.H.; Lauwers, A.; Kubicek, S.; De Gendt, S.; Heyns, M.; De Meyer, K.; |
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Title |
A new method to calculate leakage current and its applications for sub-45nm MOSFETs |
Type |
H1 Book chapter |
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Year |
2005 |
Publication ![sorted by Publication field, ascending order (up)](img/sort_asc.gif) |
Solid-State Device Research (ESSDERC), European Conference
T2 – ESSDERC 2005 : proceedings of 35th European Solid-State Device Research Conference, September 12-16, 2005, Grenoble, France |
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Pages |
489-492 |
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Keywords |
H1 Book chapter; Condensed Matter Theory (CMT) |
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Abstract |
This paper proposes a new quantum mechanical model for the calculation of leakage currents. The model incorporates both variational calculus and the transfer matrix method to compute the subband energies and the life times of the inversion layer states. The use of variational calculus simplifies the subband energy calculation due to the analytical firm of the wave functions, which offers an attractive perspective towards the calculation of the electron mobility in the channel. The model can be extended to high-k dielectrics with several layers. Good agreement between experimental data and simulation results is obtained for metal gate capacitors. |
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Ieee |
Place of Publication |
S.l. |
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000236176200114 |
Publication Date |
2005-12-13 |
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ISBN |
0-7803-9203-5 |
Additional Links |
UA library record; WoS full record |
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Open Access |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:103691 |
Serial |
2323 |
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Permanent link to this record |