“Field-free superconducting diode in a magnetically nanostructured superconductor”. Jiang J, Milošević, MV, Wang Y-L, Xiao Z-L, Peeters FM, Chen Q-H, Physical review applied 18, 034064 (2022). http://doi.org/10.1103/PHYSREVAPPLIED.18.034064
Abstract: A strong superconducting diode effect (SDE) is revealed in a thin superconducting film periodically nanostructured with magnetic dots. The SDE is caused by the current-activated dissipation mitigated by vortex-antivortex pairs (VAPs), which periodically nucleate under the dots, move and annihilate in the superconductor-eventually driving the system to the high-resistive state. Inversing the polarity of the applied current destimulates the nucleation of VAPs, the system remains superconducting up to far larger currents, leading to the pronounced diodic response. Our dissipative Ginzburg-Landau simulations detail the involved processes, and provide reliable geometric and parametric ranges for the experimental realiza-tion of such a nonvolatile superconducting diode, which operates in the absence of any applied magnetic field while being fluxonic by design.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 4.6
Times cited: 2
DOI: 10.1103/PHYSREVAPPLIED.18.034064
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“Reversible ratchet effects in a narrow superconducting ring”. Jiang J, Wang Y-L, Milošević, MV, Xiao Z-L, Peeters FM, Chen Q-H, Physical Review B 103, 014502 (2021). http://doi.org/10.1103/PHYSREVB.103.014502
Abstract: We study the ratchet effect in a narrow pinning-free superconductive ring based on time-dependent Ginzburg-Landau (TDGL) equations. Voltage responses to external dc and ac currents at various magnetic fields are studied. Due to asymmetric barriers for flux penetration and flux exit in the ring-shaped superconductor, the critical current above which the flux-flow state is reached, as well as the critical current for the transition to the normal state, are different for the two directions of applied current. These effects cooperatively cause ratchet signal reversal at high magnetic fields, which has not been reported to date in a pinning-free system. The ratchet signal found here is larger than those induced by asymmetric pinning potentials. Our results also demonstrate the feasibility of using mesoscopic superconductors to employ a superconducting diode effect in versatile superconducting devices.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 2
DOI: 10.1103/PHYSREVB.103.014502
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“Large magnetoresistance oscillations in mesoscopic superconductors due to current-excited moving vortices”. Berdiyorov GR, Milošević, MV, Latimer ML, Xiao ZL, Kwok WK, Peeters FM, Physical review letters 109, 057004 (2012). http://doi.org/10.1103/PhysRevLett.109.057004
Abstract: We show in the case of a superconducting Nb ladder that a mesoscopic superconductor typically exhibits magnetoresistance oscillations whose amplitude and temperature dependence are different from those stemming from the Little-Parks effect. We demonstrate that these large resistance oscillations (as well as the monotonic background on which they are superimposed) are due to current-excited moving vortices, where the applied current in competition with the oscillating Meissner currents imposes or removes the barriers for vortex motion in an increasing magnetic field. Because of the ever present current in transport measurements, this effect should be considered in parallel with the Little-Parks effect in low-critical temperature (T-c) samples, as well as with recently proposed thermal activation of dissipative vortex-antivortex pairs in high-T-c samples.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 8.462
Times cited: 65
DOI: 10.1103/PhysRevLett.109.057004
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“Realization of artificial ice systems for magnetic vortices in a superconducting MoGe thin film with patterned nanostructures”. Latimer ML, Berdiyorov GR, Xiao ZL, Peeters FM, Kwok WK, Physical review letters 111, 067001 (2013). http://doi.org/10.1103/PhysRevLett.111.067001
Abstract: We report an anomalous matching effect in MoGe thin films containing pairs of circular holes arranged in such a way that four of those pairs meet at each vertex point of a square lattice. A remarkably pronounced fractional matching was observed in the magnetic field dependences of both the resistance and the critical current. At the half matching field the critical current can be even higher than that at zero field. This has never been observed before for vortices in superconductors with pinning arrays. Numerical simulations within the nonlinear Ginzburg-Landau theory reveal a square vortex ice configuration in the ground state at the half matching field and demonstrate similar characteristic features in the field dependence of the critical current, confirming the experimental realization of an artificial ice system for vortices for the first time.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 8.462
Times cited: 63
DOI: 10.1103/PhysRevLett.111.067001
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“Formation of a conducting LaAlO3/SrTiO3 interface studied by low-energy electron reflection during growth”. van der Torren AJH, Liao Z, Xu C, Gauquelin N, Yin C, Aarts J, van der Molen SJ, Physical Review Materials 1, 075001 (2017). http://doi.org/10.1103/PhysRevMaterials.1.075001
Abstract: The two-dimensional electron gas occurring between the band insulators SrTiO 3 and LaAlO 3 continues to attract considerable interest, due to the possibility of dynamic control over the carrier density, and the ensuing phenomena such as magnetism and superconductivity. The formation of this conducting interface is sensitive to the growth conditions, but despite numerous investigations, there are still questions about the details of the physics involved. In particular, not much is known about the electronic structure of the growing LaAlO 3 layer at the growth temperature (around 800 ◦ C) in oxygen (pressure around 5 × 10 −5 mbar), since analysis techniques at these conditions are not readily available. We developed a pulsed laser deposition system inside a low-energy electron microscope in order to study this issue. The setup allows for layer-by-layer growth control and in-situ measurements of the angle-dependent electron reflection intensity, which can be used as a fingerprint of the electronic structure of the surface layers during growth. By using different substrate terminations and growth conditions we observe two families of reflectivity maps, which we can connect either to samples with an AlO 2 -rich surface and a conducting interface; or to samples with a LaO-rich surface and an insulating interface. Our observations emphasize that substrate termination and stoichiometry determine the electronic structure of the growing layer, and thereby the conductance of the interface.
Keywords: A1 Journal Article; Electron Microscopy for Materials Science (EMAT) ;
Times cited: 2
DOI: 10.1103/PhysRevMaterials.1.075001
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“High-mobility Bi2Se3 nanoplates manifesting quantum oscillations of surface states in the sidewalls”. Yan Y, Wang L-X, Ke X, Van Tendeloo G, Wu X-S, Yu D-P, Liao Z-M, Scientific reports 4, 3817 (2014). http://doi.org/10.1038/srep03817
Abstract: Magnetotransport measurements of topological insulators are very important to reveal the exotic topological surface states for spintronic applications. However, the novel properties related to the surface Dirac fermions are usually accompanied by a large linear magnetoresistance under perpendicular magnetic field, which makes the identification of the surface states obscure. Here, we report prominent Shubnikov-de Haas (SdH) oscillations under an in-plane magnetic field, which are identified to originate from the surface states in the sidewalls of topological insulator Bi2Se3 nanoplates. Importantly, the SdH oscillations appear with a dramatically weakened magnetoresistance background, offering an easy path to probe the surface states directly when the coexistence of surface states and bulk conduction is inevitable. Moreover, under a perpendicular magnetic field, the oscillations in Hall conductivity have peak-to-valley amplitudes of 2 e(2)/h, giving confidence to achieve a quantum Hall effect in this system. A cross-section view of the nanoplate shows that the sidewall is (015) facet dominant and therefore forms a 586 angle with regard to the top/ bottom surface instead of being perpendicular; this gives credit to the surface states' behavior as two-dimensional transport.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 4.259
Times cited: 31
DOI: 10.1038/srep03817
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“Electric field activated hydrogen dissociative adsorption to nitrogen-doped graphene”. Ao ZM, Peeters FM, The journal of physical chemistry: C : nanomaterials and interfaces 114, 14503 (2010). http://doi.org/10.1021/jp103835k
Abstract: Graphane, hydrogenated graphene, was very recently synthesized and predicted to have great potential applications. In this work, we propose a new promising approach for hydrogenation of graphene based on density functional theory (DFT) calculations through the application of a perpendicular electric field after substitutionally doping by nitrogen atoms. These DFT calculations show that the doping by nitrogen atoms into the graphene layer and applying an electrical field normal to the graphene surface induce dissociative adsorption of hydrogen. The dissociative adsorption energy barrier of an H2 molecule on a pristine graphene layer changes from 2.7 to 2.5 eV on N-doped graphene, and to 0.88 eV on N-doped graphene under an electric field of 0.005 au. When increasing the electric field above 0.01 au, the reaction barrier disappears. Therefore, N doping and applying an electric field have catalytic effects on the hydrogenation of graphene, which can be used for hydrogen storage purposes and nanoelectronic applications.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 4.536
Times cited: 110
DOI: 10.1021/jp103835k
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