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Records |
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Author |
van Meel, K.; Fontàs, C.; Van Grieken, R.; Queralt, I.; Hidalgo, M.; Marguí, E. |
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Title |
Application of high-energy polarised beam energy dispersive X-ray fluorescence spectrometry to cadmium determination in saline solutions |
Type |
A1 Journal article |
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Year |
2008 |
Publication ![sorted by Publication field, ascending order (up)](img/sort_asc.gif) |
Journal of analytical atomic spectrometry |
Abbreviated Journal |
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Volume |
23 |
Issue |
7 |
Pages |
1034-1037 |
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Keywords |
A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Place of Publication |
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Editor |
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Wos |
000257146000017 |
Publication Date |
2008-04-22 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0267-9477 |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
no |
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Call Number |
UA @ admin @ c:irua:69424 |
Serial |
7476 |
Permanent link to this record |
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Author |
Lachmann, T.; van der Snickt, G.; Haschke, M.; Mantouvalou, I. |
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Title |
Combined 1D, 2D and 3D micro-XRF techniques for the analysis of illuminated manuscripts |
Type |
A1 Journal article |
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Year |
2016 |
Publication ![sorted by Publication field, ascending order (up)](img/sort_asc.gif) |
Journal of analytical atomic spectrometry |
Abbreviated Journal |
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Volume |
31 |
Issue |
10 |
Pages |
1989-1997 |
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Keywords |
A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation) |
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Abstract |
The combination of several micro-XRF analysis modes is presented for the investigation of an illuminated parchment manuscript. With a commercial instrument, conventional micro-XRF spot analysis (0D) and mapping (2D) are performed, yielding detailed lateral elemental information. Depth resolution becomes accessible by mounting an additional polycapillary lens in front of an SDD detector. Quantitative confocal depth profiles (1D) are presented as well as the full separation of the front and the backside decorations with the help of fast 3D mappings of specific areas. Only through the use of these multidimensional modes can elemental information be assigned both to lateral and depth positions, making the analysis of such heterogeneous samples feasible. |
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Address |
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Corporate Author |
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Thesis |
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Place of Publication |
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Wos |
000385362200004 |
Publication Date |
2016-08-25 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0267-9477 |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
no |
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Call Number |
UA @ admin @ c:irua:144755 |
Serial |
7679 |
Permanent link to this record |
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Author |
Kuczumow, A.; Schmeling, M.; Van Grieken, R. |
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Title |
Critical assessment and proposal for reconstruction of a grazing emission X-ray fluorescence instrument |
Type |
A1 Journal article |
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Year |
2000 |
Publication ![sorted by Publication field, ascending order (up)](img/sort_asc.gif) |
Journal of analytical atomic spectrometry |
Abbreviated Journal |
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Volume |
15 |
Issue |
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Pages |
535-542 |
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Keywords |
A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
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Editor |
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Language |
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Wos |
000086871600008 |
Publication Date |
2002-07-26 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0267-9477 |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
no |
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Call Number |
UA @ admin @ c:irua:27852 |
Serial |
7741 |
Permanent link to this record |
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Author |
Kuczumow, A.; Claes, M.; Schmeling, M.; Van Grieken, R.; de Gendt, S. |
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Title |
Quantification problems in light element determination by grazing emission X-ray fluorescence |
Type |
A1 Journal article |
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Year |
2000 |
Publication ![sorted by Publication field, ascending order (up)](img/sort_asc.gif) |
Journal of analytical atomic spectrometry |
Abbreviated Journal |
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Volume |
15 |
Issue |
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Pages |
415-421 |
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Keywords |
A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
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Editor |
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Language |
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Wos |
000086323700017 |
Publication Date |
2002-07-26 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0267-9477 |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
no |
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Call Number |
UA @ admin @ c:irua:27592 |
Serial |
8437 |
Permanent link to this record |
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Author |
Szalóki, I.; Braun, M.; Van Grieken, R. |
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Title |
Quantitative characterisation of the leaching of lead and other elements from glazed surfaces of historical ceramics |
Type |
A1 Journal article |
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Year |
2000 |
Publication ![sorted by Publication field, ascending order (up)](img/sort_asc.gif) |
Journal of analytical atomic spectrometry |
Abbreviated Journal |
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Volume |
15 |
Issue |
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Pages |
843-850 |
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Keywords |
A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
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Editor |
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Language |
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Wos |
000088267700006 |
Publication Date |
2002-07-26 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0267-9477 |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
no |
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Call Number |
UA @ admin @ c:irua:28426 |
Serial |
8440 |
Permanent link to this record |
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Author |
van Dyck, K.; Robberecht, H.; van Cauwenbergh, R.; Deelstra, H.; Arnaud, J.; Willemyns, L.; Benijts, F.; Centeno, J.A.; Taylor, H.; Soares, M.E.; Bastos, M.L.; Ferreira, M.A.; d'Haese, P.C.; Lamberts, L.V.; Hoenig, M.; Knapp, G.; Lugowski, S.J.; Moens, L.; Riondato, J.; Van Grieken, R.; Claes, M.; Verheyen, R.; Clement, L.; Uytterhoeven, M. |
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Title |
Spectrometric determination of silicon in food and biological samples: an interlaboratory trial |
Type |
A1 Journal article |
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Year |
2000 |
Publication ![sorted by Publication field, ascending order (up)](img/sort_asc.gif) |
Journal of analytical atomic spectrometry |
Abbreviated Journal |
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Volume |
15 |
Issue |
6 |
Pages |
735-741 |
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Keywords |
A1 Journal article; Behavioural Ecology & Ecophysiology; Pathophysiology; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation) |
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Abstract |
Accuracy and precision of silicon determination in biological matrices (serum, urine, water, beer and spinach) by spectrometric techniques (when necessary after acid destruction) were assessed by means of a collaborative interlaboratory trial. The trial was set up in accordance with ISO 5725-2 (1994). The relative overall repeatability standard deviation was acceptable. It varied between 4% for spinach powder (mean content: 176 mg kg(-1)) and 11% for serum (mean content: 5.33 mg L-1). On the other hand, the relative overall between-laboratory standard deviation was found to vary from a satisfactorily 15% for spinach after destruction (mean content: 3.32 mg L-1) to an unacceptable 107% for spinach powder (mean content: 176 mg kg(-1)). The overall conclusion of the trial was that silicon determination in biological matrices can properly be performed by spectrometric techniques. However, when sample pretreatment (i.e., acid destruction) is needed prior to silicon determination problems still remain. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
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Editor |
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Language |
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Wos |
000087419300025 |
Publication Date |
2002-07-26 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0267-9477 |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
no |
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Call Number |
UA @ admin @ c:irua:27841 |
Serial |
8574 |
Permanent link to this record |
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Author |
Gatto Rotondo, G.; Darchuk, L.; Swaenen, M.; Van Grieken, R. |
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Title |
Micro-Raman and SEM analysis of minerals from the Darhib mine, Egypt |
Type |
A1 Journal article |
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Year |
2012 |
Publication ![sorted by Publication field, ascending order (up)](img/sort_asc.gif) |
Journal of analytical sciences, methods and instrumentation |
Abbreviated Journal |
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Volume |
2 |
Issue |
1 |
Pages |
42-47 |
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Keywords |
A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation) |
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Abstract |
The Darhib mine is one of the several talc deposits in the Hamata area of southeastern Egypt. Several specimens of minerals coming from this mine were subjected to complementary investigation by micro-Raman spectrometry and scanning electron microscopy. The difficulty in their identification is the appearance of most of them: they are all very small and only visible under the mineral binocular microscope(×10 – ×40). They appear as small crystals in fissures and holes and a visual determination on colour and crystal gives only a guess of what kind of mineral it could be. Therefore, only after analyzing them by micro-Raman and scanning electron microscopy it was possible to identify their structure and they can be divided in three main groups: one is quite generic and several minerals of different species were identified, such as quartz, talc, mottramite and chrysocolla, very common in the talc mine (these ones are Si-based minerals); the other one is constituted by four samples which are Zn and/or Cu rich, which means minerals of the rosasite or aurichalcite groups; the last group is constituted by two samples containing mainly Pb.. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
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Editor |
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Language |
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Wos |
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Publication Date |
2012-03-31 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
2164-2745; 2164-2753 |
ISBN |
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Additional Links |
UA library record |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
no |
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Call Number |
UA @ admin @ c:irua:102567 |
Serial |
8232 |
Permanent link to this record |
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Author |
Bogomolova, A.; Hruby, M.; Panek, J.; Rabyk, M.; Turner, S.; Bals, S.; Steinhart, M.; Zhigunov, A.; Sedlacek, O.; Stepanek, P.; Filippov, S.K.; |
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Title |
Small-angle X-ray scattering and light scattering study of hybrid nanoparticles composed of thermoresponsive triblock copolymer F127 and thermoresponsive statistical polyoxazolines with hydrophobic moieties |
Type |
A1 Journal article |
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Year |
2013 |
Publication ![sorted by Publication field, ascending order (up)](img/sort_asc.gif) |
Journal of applied crystallography |
Abbreviated Journal |
J Appl Crystallogr |
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Volume |
46 |
Issue |
6 |
Pages |
1690-1698 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
A combination of new thermoresponsive statistical polyoxazolines, poly[(2-butyl-2-oxazoline)-stat-(2-isopropyl-2-oxazoline)] [pBuOx-co-piPrOx], with different hydrophobic moieties and F127 surfactant as a template system for the creation of thermosensitive nanoparticles for radionuclide delivery has recently been tested [Pánek, Filippov, Hrubý, Rabyk, Bogomolova, Kučka Stěpánek (2012). Macromol. Rapid Commun.33, 16831689]. It was shown that the presence of the thermosensitive F127 triblock copolymer in solution reduces nanoparticle size and polydispersity. This article focuses on a determination of the internal structure and solution properties of the nanoparticles in the temperature range from 288 to 312 K. Here, it is demonstrated that below the cloud point temperature (CPT) the polyoxazolines and F127 form complexes that co-exist in solution with single F127 molecules and large aggregates. When the temperature is raised above the CPT, nanoparticles composed of polyoxazolines and F127 are predominant in solution. These nanoparticles could be described by a spherical shell model. It was found that the molar weight and hydrophobicity of the polymer do not influence the size of the outer radius and only slightly change the inner radius of the nanoparticles. At the same time, molar weight and hydrophobicity did affect the process of nanoparticle formation. In conclusion, poly(2-oxazoline) molecules are fully incorporated inside of F127 micelles, and this result is very promising for the successful application of such systems in radionuclide delivery. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Copenhagen |
Editor |
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Language |
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Wos |
000327070000020 |
Publication Date |
2013-11-06 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
|
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ISSN |
0021-8898; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
|
Times cited |
18 |
Open Access |
|
|
Notes |
262348 Esmi; Fwo; Iap-Pai |
Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:112420 |
Serial |
3042 |
Permanent link to this record |
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Author |
Leinders, G.; Grendal, O.G.; Arts, I.; Bes, R.; Prozheev, I.; Orlat, S.; Fitch, A.; Kvashnina, K.; Verwerft, M. |
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Title |
Refinement of the uranium dispersion corrections from anomalous diffraction |
Type |
A1 Journal Article |
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Year |
2024 |
Publication ![sorted by Publication field, ascending order (up)](img/sort_asc.gif) |
Journal of Applied Crystallography |
Abbreviated Journal |
J Appl Cryst |
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Volume |
57 |
Issue |
2 |
Pages |
284-295 |
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Keywords |
A1 Journal Article; Electron Microscopy for Materials Science (EMAT) ; |
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Abstract |
The evolution of the uranium chemical state in uranium compounds, principally in the oxides, is of concern in the context of nuclear fuel degradation under storage and repository conditions, and in accident scenarios. The U–O system shows complicated phase relations between single-valence uranium dioxide (UO<sub>2</sub>) and different mixed-valence compounds (<italic>e.g.</italic>U<sub>4</sub>O<sub>9</sub>, U<sub>3</sub>O<sub>7</sub>and U<sub>3</sub>O<sub>8</sub>). To try resolving the electronic structure associated with unique atomic positions, a combined application of diffraction and spectroscopic techniques, such as diffraction anomalous fine structure (DAFS), can be considered. Reported here is the application of two newly developed routines for assessing a DAFS data set, with the aim of refining the uranium X-ray dispersion corrections. High-resolution anomalous diffraction data were acquired from polycrystalline powder samples of UO<sub>2</sub>(containing tetravalent uranium) and potassium uranate (KUO<sub>3</sub>, containing pentavalent uranium) using synchrotron radiation in the vicinity of the U<italic>L</italic><sub>3</sub>edge (17.17 keV). Both routines are based on an iterative refinement of the dispersion corrections, but they differ in either using the intensity of a selection of reflections or doing a full-pattern (Rietveld method) refinement. The uranium dispersion corrections obtained using either method are in excellent agreement with each other, and they show in great detail the chemical shifts and differences in fine structure expected for tetravalent and pentavalent uranium. This approach may open new possibilities for the assessment of other, more complicated, materials such as mixed-valence compounds. Additionally, the DAFS methodology can offer a significant resource optimization because each data set contains both structural (diffraction) and chemical (spectroscopy) information, which can avoid the requirement to use multiple experimental stations at synchrotron sources. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
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Editor |
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Language |
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Wos |
001208800100008 |
Publication Date |
2024-04-01 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
|
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ISSN |
1600-5767 |
ISBN |
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Additional Links |
UA library record; WoS full record |
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Impact Factor |
6.1 |
Times cited |
|
Open Access |
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Notes |
FPS Economy, SF-CORMOD; |
Approved |
Most recent IF: 6.1; 2024 IF: 2.495 |
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Call Number |
EMAT @ emat @c:irua:206011 |
Serial |
9127 |
Permanent link to this record |
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Author |
Rezaei, M.; Saey, T.; Seuntjens, P.; Joris, I.; Boenne, W.; Van Meirvenne, M.; Cornelis, W. |
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Title |
Predicting saturated hydraulic conductivity in a sandy grassland using proximally sensed apparent electrical conductivity |
Type |
A1 Journal article |
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Year |
2016 |
Publication ![sorted by Publication field, ascending order (up)](img/sort_asc.gif) |
Journal of applied geophysics |
Abbreviated Journal |
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Volume |
126 |
Issue |
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Pages |
35-41 |
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Keywords |
A1 Journal article; Sustainable Energy, Air and Water Technology (DuEL) |
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Abstract |
Finding a correspondence between soil hydraulic properties, such as saturated hydraulic conductivity (Ks) and apparent electrical conductivity (ECa) as an easily measurable parameter, may be a way forward to estimate the spatial distribution of hydraulic properties at the field scale. In this study, the spatial distributions of Ks, of soil ECa measured by a DUALEM-21S sensor and of soil physical properties were investigated in a sandy grassland. To predict field scale Ks, the statistical relationship between co-located soil Ks, and EMI-ECa was evaluated. Results demonstrated the large spatial variability of all studied properties with Ks being the most variable one (CV = 86.21%) followed by ECa (CV >= 53.77%). A significant negative correlation was found between In-transformed Ks and ECa (r = 0.83; P <= 0.01) at two depths of exploration (0-50 and 0-100 cm). This site specific relation between In Ks and ECa was used to predict saturated hydraulic conductivity over 0-50 cm depth for the whole field. The empirical relation was validated using an independent dataset of measured Ks. The statistical results demonstrate the robustness of this empirical relation with mean estimation error MEE = 0.46 (cm h(-1)), root-mean-square estimation errors RMSEE = 0.74 (cm h(-1)), coefficient of determination r(2) = 0.67 and coefficient of model efficiency Ce = 0.64. The relationship was then used to produce a detailed map of Ks for the whole field. The result will allow model predictions of spatially distributed water content in view of irrigation management. (C) 2016 Elsevier B.V. All rights reserved. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
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Editor |
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Language |
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Wos |
000371361200004 |
Publication Date |
2016-01-17 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0926-9851 |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
|
Times cited |
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Open Access |
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Notes |
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Approved |
no |
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Call Number |
UA @ admin @ c:irua:132349 |
Serial |
8403 |
Permanent link to this record |
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Author |
Herrebout, D.; Bogaerts, A.; Yan, M.; Goedheer, W.; Dekempeneer, E.; Gijbels, R. |
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Title |
1D fluid model for an rf methane plasma of interest in deposition of diamond-like carbon layers |
Type |
A1 Journal article |
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Year |
2001 |
Publication ![sorted by Publication field, ascending order (up)](img/sort_asc.gif) |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
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Volume |
90 |
Issue |
|
Pages |
570-579 |
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Keywords |
A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos |
000169660000007 |
Publication Date |
2002-07-26 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
|
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ISSN |
0021-8979; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
2.068 |
Times cited |
83 |
Open Access |
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|
Notes |
|
Approved |
Most recent IF: 2.068; 2001 IF: 2.128 |
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Call Number |
UA @ lucian @ c:irua:37250 c:irua:37250 c:irua:37250 c:irua:37250 |
Serial |
2 |
Permanent link to this record |
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Author |
Li, D.Y.; Zeng, Y.J.; Pereira, L.M.C.; Batuk, D.; Hadermann, J.; Zhang, Y.Z.; Ye, Z.Z.; Temst, K.; Vantomme, A.; Van Bael, M.J.; Van Haesendonck, C.; |
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Title |
Anisotropic magnetism and spin-dependent transport in Co nanoparticle embedded ZnO thin films |
Type |
A1 Journal article |
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Year |
2013 |
Publication ![sorted by Publication field, ascending order (up)](img/sort_asc.gif) |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
|
Volume |
114 |
Issue |
3 |
Pages |
033909-6 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
Oriented Co nanoparticles were obtained by Co ion implantation in crystalline ZnO thin films grown by pulsed laser deposition. Transmission electron microscopy revealed the presence of elliptically shaped Co precipitates with nanometer size, which are embedded in the ZnO thin films, resulting in anisotropic magnetic behavior. The low-temperature resistance of the Co-implanted ZnO thin films follows the Efros-Shklovskii type variable-range-hopping. Large negative magnetoresistance (MR) exceeding 10% is observed in a magnetic field of 1 T at 2.5K and the negative MR survives up to 250K (0.3%). The negative MR reveals hysteresis as well as anisotropy that correlate well with the magnetic properties, clearly demonstrating the presence of spin-dependent transport. (C) 2013 AIP Publishing LLC. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
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Language |
|
Wos |
000322202700071 |
Publication Date |
2013-07-17 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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|
ISSN |
0021-8979; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
2.068 |
Times cited |
10 |
Open Access |
|
|
Notes |
|
Approved |
Most recent IF: 2.068; 2013 IF: 2.185 |
|
Call Number |
UA @ lucian @ c:irua:110765 |
Serial |
126 |
Permanent link to this record |
|
|
|
|
Author |
Castelano, L.K.; Hai, G.Q.; Partoens, B.; Peeters, F.M. |
|
Title |
Artificial molecular quantum rings under magnetic field influence |
Type |
A1 Journal article |
|
Year |
2009 |
Publication ![sorted by Publication field, ascending order (up)](img/sort_asc.gif) |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
|
Volume |
106 |
Issue |
7 |
Pages |
073702,1-073702,8 |
|
Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
|
Abstract |
The ground states of a few electrons confined in two vertically coupled quantum rings in the presence of an external magnetic field are studied systematically within the current spin-density functional theory. Electron-electron interactions combined with inter-ring tunneling affect the electronic structure and the persistent current. For small values of the external magnetic field, we recover the zero magnetic field molecular quantum ring ground state configurations. Increasing the magnetic field many angular momentum, spin, and isospin transitions are predicted to occur in the ground state. We show that these transitions follow certain rules, which are governed by the parity of the number of electrons, the single-particle picture, Hunds rules, and many-body effects. |
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Address |
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Corporate Author |
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Thesis |
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|
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
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|
Language |
|
Wos |
000270915600047 |
Publication Date |
2009-10-03 |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
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|
Series Volume |
|
Series Issue |
|
Edition |
|
|
ISSN |
0021-8979; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
2.068 |
Times cited |
5 |
Open Access |
|
|
Notes |
|
Approved |
Most recent IF: 2.068; 2009 IF: 2.072 |
|
Call Number |
UA @ lucian @ c:irua:86926 |
Serial |
155 |
Permanent link to this record |
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|
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Author |
Chang, K.; Peeters, F.M. |
|
Title |
Asymmetric stark shifts in InGaAs/GaAs near-surface quantum wells: the image charge effect |
Type |
A1 Journal article |
|
Year |
2000 |
Publication ![sorted by Publication field, ascending order (up)](img/sort_asc.gif) |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
|
Volume |
88 |
Issue |
|
Pages |
5246-5251 |
|
Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
|
Abstract |
|
|
Address |
|
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Corporate Author |
|
Thesis |
|
|
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
|
Language |
|
Wos |
000089813800048 |
Publication Date |
2002-07-26 |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
ISSN |
0021-8979; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
2.068 |
Times cited |
20 |
Open Access |
|
|
Notes |
|
Approved |
Most recent IF: 2.068; 2000 IF: 2.180 |
|
Call Number |
UA @ lucian @ c:irua:34355 |
Serial |
159 |
Permanent link to this record |
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|
|
Author |
Pourghaderi, M.A.; Magnus, W.; Sorée, B.; Meuris, M.; de Meyer, K.; Heyns, M. |
|
Title |
Ballistic current in metal-oxide-semiconductor field-effect transistors: the role of device topology |
Type |
A1 Journal article |
|
Year |
2009 |
Publication ![sorted by Publication field, ascending order (up)](img/sort_asc.gif) |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
|
Volume |
106 |
Issue |
5 |
Pages |
053702,1-053702,8 |
|
Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
|
Abstract |
In this study we investigate the effect of device topology on the ballistic current in n-channel metal-oxide-semiconductor field-effect transistors. Comparison of the nanoscale planar and double-gate devices reveals that, down to a certain thickness of the double gate film, the ballistic current flowing in the double gate device is twice as large compared to its planar counterpart. On the other hand, further thinning of the film beyond this threshold is found to change noticeably the confinement and transport characteristics, which are strongly depending on the film material and the surface orientation. For double gate Ge and Si devices there exists a critical film thickness below which the transverse gate field is no longer effectively screened by the inversion layer electron gas and mutual inversion of the two gates is turned on. In the case of GaAs and other similar IIIV compounds, a decrease in the film thickness may drastically change the occupation of the L-valleys and therefore amend the transport properties. The simulation results show that, in both cases, the ballistic current and the transconductance are considerably enhanced. |
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Address |
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Corporate Author |
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Thesis |
|
|
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
|
Language |
|
Wos |
000269850300052 |
Publication Date |
2009-09-03 |
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Series Editor |
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Series Title |
|
Abbreviated Series Title |
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
ISSN |
0021-8979; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
2.068 |
Times cited |
3 |
Open Access |
|
|
Notes |
|
Approved |
Most recent IF: 2.068; 2009 IF: 2.072 |
|
Call Number |
UA @ lucian @ c:irua:79744 |
Serial |
214 |
Permanent link to this record |
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|
Author |
Milovanovic, S.P.; Masir, M.R.; Peeters, F.M. |
|
Title |
Bilayer graphene Hall bar with a pn-junction |
Type |
A1 Journal article |
|
Year |
2013 |
Publication ![sorted by Publication field, ascending order (up)](img/sort_asc.gif) |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
|
Volume |
114 |
Issue |
11 |
Pages |
113706 |
|
Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
|
Abstract |
We investigate the magnetic field dependence of the Hall and the bend resistances for a ballistic Hall bar structure containing a pn-junction sculptured from a bilayer of graphene. The electric response is obtained using the billiard model, and we investigate the cases of bilayer graphene with and without a band gap. Two different conduction regimes are possible: (i) both sides of the junction have the same carrier type and (ii) one side of the junction is n-type while the other one is p-type. The first case shows Hall plateau-like features in the Hall resistance that fade away as the band gap opens. The second case exhibits a bend resistance that is asymmetric in magnetic field as a consequence of snake states along the pn-interface, where the maximum is shifted away from zero magnetic field. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
|
Language |
|
Wos |
000324827200031 |
Publication Date |
2013-09-17 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
|
Edition |
|
|
ISSN |
0021-8979; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
2.068 |
Times cited |
3 |
Open Access |
|
|
Notes |
This work was supported by the Flemish Science Foundation (FWO-Vl), the European Science Foundation (ESF) under the EUROCORES Program EuroGRAPHENE within the project CONGRAN, and the Methusalem Foundation of the Flemish government. |
Approved |
Most recent IF: 2.068; 2013 IF: 2.185 |
|
Call Number |
UA @ lucian @ c:irua:111169 |
Serial |
234 |
Permanent link to this record |
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Author |
Titantah, J.T.; Lamoen, D.; Schowalter, M.; Rosenauer, A. |
|
Title |
Bond length variation in Ga1-xInxAs crystals from the Tersoff potential |
Type |
A1 Journal article |
|
Year |
2007 |
Publication ![sorted by Publication field, ascending order (up)](img/sort_asc.gif) |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
|
Volume |
101 |
Issue |
12 |
Pages |
123508,1-4 |
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
|
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Address |
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Corporate Author |
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Thesis |
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Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
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Language |
|
Wos |
000247625700034 |
Publication Date |
2007-06-20 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
|
Series Issue |
|
Edition |
|
|
ISSN |
0021-8979; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
2.068 |
Times cited |
19 |
Open Access |
|
|
Notes |
|
Approved |
Most recent IF: 2.068; 2007 IF: 2.171 |
|
Call Number |
UA @ lucian @ c:irua:67460 |
Serial |
247 |
Permanent link to this record |
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|
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Author |
Schattschneider, P.; Ennen, I.; Stoger-Pollach, M.; Verbeeck, J. |
|
Title |
Circular dichroism in the electron microscope: progress and applications (invited) |
Type |
A1 Journal article |
|
Year |
2010 |
Publication ![sorted by Publication field, ascending order (up)](img/sort_asc.gif) |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
|
Volume |
107 |
Issue |
9 |
Pages |
09d311,1-09d311,6 |
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
Abstract |
According to theory, x-ray magnetic circular dichroism in a synchrotron is equivalent to energy loss magnetic chiral dichroism (EMCD) in a transmission electron microscope (TEM). After a synopsis of the development of EMCD, the theoretical background is reviewed and recent results are presented, focusing on the study of magnetic nanoparticles for ferrofluids and Heusler alloys for spintronic devices. Simulated maps of the dichroic strength as a function of atom position in the crystal allow evaluating the influence of specimen thickness and sample tilt on the experimental EMCD signal. Finally, the possibility of direct observation of chiral electronic transitions with atomic resolution in a TEM is discussed. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
|
Language |
|
Wos |
000277834300276 |
Publication Date |
2010-05-12 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
|
Series Issue |
|
Edition |
|
|
ISSN |
0021-8979; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
2.068 |
Times cited |
28 |
Open Access |
|
|
Notes |
Esteem |
Approved |
Most recent IF: 2.068; 2010 IF: 2.079 |
|
Call Number |
UA @ lucian @ c:irua:83653UA @ admin @ c:irua:83653 |
Serial |
361 |
Permanent link to this record |
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Author |
Saraiva, M.; Georgieva, V.; Mahieu, S.; van Aeken, K.; Bogaerts, A.; Depla, D. |
|
Title |
Compositional effects on the growth of Mg(M)O films |
Type |
A1 Journal article |
|
Year |
2010 |
Publication ![sorted by Publication field, ascending order (up)](img/sort_asc.gif) |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
|
Volume |
107 |
Issue |
3 |
Pages |
034902,1-034902,10 |
|
Keywords |
A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
|
Abstract |
The influence of the composition on the crystallographic properties of deposited Mg(M)O (with M=Al, Cr, Ti, Y, and Zr) films is studied. For a flexible control of the composition, dual reactive magnetron sputtering was used as deposition technique. Two different approaches to predict the composition are discussed. The first is an experimental way based on the simple relationship between the deposition rate and the target-substrate distance. The second is a route using a Monte Carlo based particle trajectory code. Both methods require a minimal experimental input and enable the user to quickly predict the composition of complex thin films. Good control and flexibility allow us to study the compositional effects on the growth of Mg(M)O films. Pure MgO thin films were grown with a (111) preferential out-of-plane orientation. When adding M to MgO, two trends were noticed. The first trend is a change in the MgO lattice parameters compared to pure MgO. The second tendency is a decrease in the crystallinity of the MgO phase. The experimentally determined crystallographic properties are shown to be in correspondence with the predicted properties from molecular dynamics simulations. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
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Language |
|
Wos |
000274517300116 |
Publication Date |
2010-02-03 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
|
Series Issue |
|
Edition |
|
|
ISSN |
0021-8979; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
2.068 |
Times cited |
|
Open Access |
|
|
Notes |
|
Approved |
Most recent IF: 2.068; 2010 IF: 2.079 |
|
Call Number |
UA @ lucian @ c:irua:80346 |
Serial |
447 |
Permanent link to this record |
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Author |
Berdiyorov, G.; Harrabi, K.; Mehmood, U.; Peeters, F.M.; Tabet, N.; Zhang, J.; Hussein, I.A.; McLachlan, M.A. |
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Title |
Derivatization and diffusive motion of molecular fullerenes : ab initio and atomistic simulations |
Type |
A1 Journal article |
|
Year |
2015 |
Publication ![sorted by Publication field, ascending order (up)](img/sort_asc.gif) |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
|
Volume |
118 |
Issue |
118 |
Pages |
025101 |
|
Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
|
Abstract |
Using first principles density functional theory in combination with the nonequilibrium Green's function formalism, we study the effect of derivatization on the electronic and transport properties of C-60 fullerene. As a typical example, we consider [6,6]-phenyl-C-61-butyric acid methyl ester (PCBM), which forms one of the most efficient organic photovoltaic materials in combination with electron donating polymers. Extra peaks are observed in the density of states (DOS) due to the formation of new electronic states localized at/near the attached molecule. Despite such peculiar behavior in the DOS of an isolated molecule, derivatization does not have a pronounced effect on the electronic transport properties of the fullerene molecular junctions. Both C-60 and PCBM show the same response to finite voltage biasing with new features in the transmission spectrum due to voltage induced delocalization of some electronic states. We also study the diffusive motion of molecular fullerenes in ethanol solvent and inside poly(3-hexylthiophene) lamella using reactive molecular dynamics simulations. We found that the mobility of the fullerene reduces considerably due to derivatization; the diffusion coefficient of C-60 is an order of magnitude larger than the one for PCBM. (c) 2015 AIP Publishing LLC. |
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Address |
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Corporate Author |
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Thesis |
|
|
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
|
Language |
|
Wos |
000357961000036 |
Publication Date |
2015-07-10 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
|
Series Issue |
|
Edition |
|
|
ISSN |
0021-8979;1089-7550; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
2.068 |
Times cited |
2 |
Open Access |
|
|
Notes |
; K.H., U.M. and I.A.H. would like to thank the National Science, Technology and Innovation Program of KACST for funding this research under Project No. 12-ENE2379-04. They also acknowledge support from KFUPM and Research Institute. ; |
Approved |
Most recent IF: 2.068; 2015 IF: 2.183 |
|
Call Number |
c:irua:127098 |
Serial |
652 |
Permanent link to this record |
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Author |
Bogaerts, A.; van Straaten, M.; Gijbels, R. |
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Title |
Description of the thermalization process of the sputtered atoms in a glow discharge using a 3-dimensional Monte Carlo method |
Type |
A1 Journal article |
|
Year |
1995 |
Publication ![sorted by Publication field, ascending order (up)](img/sort_asc.gif) |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
|
Volume |
77 |
Issue |
|
Pages |
1868-1874 |
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Keywords |
A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
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Language |
|
Wos |
A1995RC30300006 |
Publication Date |
2002-07-26 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
|
|
ISSN |
0021-8979; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
2.183 |
Times cited |
87 |
Open Access |
|
|
Notes |
|
Approved |
no |
|
Call Number |
UA @ lucian @ c:irua:12270 |
Serial |
655 |
Permanent link to this record |
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Author |
Reijniers, J.; Peeters, F.M. |
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Title |
Diffusive transport in the hybrid Hall effect device |
Type |
A1 Journal article |
|
Year |
2000 |
Publication ![sorted by Publication field, ascending order (up)](img/sort_asc.gif) |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
|
Volume |
87 |
Issue |
|
Pages |
8088-8092 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT); Engineering Management (ENM) |
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Abstract |
|
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Address |
|
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Corporate Author |
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Thesis |
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Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
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Language |
|
Wos |
000087067400075 |
Publication Date |
2002-07-26 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
|
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ISSN |
0021-8979; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
2.068 |
Times cited |
12 |
Open Access |
|
|
Notes |
|
Approved |
Most recent IF: 2.068; 2000 IF: 2.180 |
|
Call Number |
UA @ lucian @ c:irua:28516 |
Serial |
703 |
Permanent link to this record |
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Author |
Pokatilov, E.P.; Fomin, V.M.; Balaban, S.N.; Gladilin, V.N.; Klimin, S.N.; Devreese, J.T.; Magnus, W.; Schoenmaker, W.; Collaert, N.; van Rossum, M.; de Meyer, K. |
|
Title |
Distribution of fields and charge carriers in cylindrical nanosize silicon-based metal-oxide-semiconductor structures |
Type |
A1 Journal article |
|
Year |
1999 |
Publication ![sorted by Publication field, ascending order (up)](img/sort_asc.gif) |
Journal Of Applied Physics |
Abbreviated Journal |
J Appl Phys |
|
Volume |
85 |
Issue |
|
Pages |
6625-6631 |
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Keywords |
A1 Journal article; Electron Microscopy for Materials Science (EMAT); |
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Abstract |
|
|
Address |
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Corporate Author |
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Thesis |
|
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Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
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Language |
|
Wos |
000079871200053 |
Publication Date |
2002-07-26 |
|
Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
|
Series Issue |
|
Edition |
|
|
ISSN |
0021-8979; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
2.068 |
Times cited |
16 |
Open Access |
|
|
Notes |
|
Approved |
Most recent IF: 2.068; 1999 IF: 2.275 |
|
Call Number |
UA @ lucian @ c:irua:24444 |
Serial |
743 |
Permanent link to this record |
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|
|
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Author |
Seyed-Talebi, S.M.; Beheshtian, J.; Neek-Amal, M. |
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Title |
Doping effect on the adsorption of NH3 molecule onto graphene quantum dot : from the physisorption to the chemisorption |
Type |
A1 Journal article |
|
Year |
2013 |
Publication ![sorted by Publication field, ascending order (up)](img/sort_asc.gif) |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
|
Volume |
114 |
Issue |
12 |
Pages |
124307-7 |
|
Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
|
Abstract |
The adsorption of ammonia molecule onto a graphene hexagonal flake, aluminum (Al) and boron (B) doped graphene flakes (graphene quantum dots, GQDs) are investigated using density functional theory. We found that NH3 molecule is absorbed to the hollow site through the physisorption mechanism without altering the electronic properties of GQD. However, the adsorption energy of NH3 molecule onto the Al- and B-doped GQDs increases with respect GQD resulting chemisorption. The adsorption of NH3 onto the Al-doped and B-doped GQDs makes graphene locally buckled, i.e., B-doped and Al-doped GQDs are not planar. The adsorption mechanism onto a GQD is different than that of graphene. This study reveals important features of the edge passivation and doping effects of the adsorption mechanism of external molecules onto the graphene quantum dots. (C) 2013 AIP Publishing LLC. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
|
Language |
|
Wos |
000325391100057 |
Publication Date |
2013-09-26 |
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Series Editor |
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Series Title |
|
Abbreviated Series Title |
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Series Volume |
|
Series Issue |
|
Edition |
|
|
ISSN |
0021-8979; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
2.068 |
Times cited |
10 |
Open Access |
|
|
Notes |
; This work was supported by the EU-Marie Curie IIF Fellowship/299855 for M.-N.A. ; |
Approved |
Most recent IF: 2.068; 2013 IF: 2.185 |
|
Call Number |
UA @ lucian @ c:irua:112201 |
Serial |
750 |
Permanent link to this record |
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|
|
|
Author |
Comrie, C.M.; Ahmed, A.; Smeets, D.; Demeulemeester, J.; Turner, S.; Van Tendeloo, G.; Detavernier, C.; Vantomme, A. |
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Title |
Effect of high temperature deposition on CoSi2 phase formation |
Type |
A1 Journal article |
|
Year |
2013 |
Publication ![sorted by Publication field, ascending order (up)](img/sort_asc.gif) |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
|
Volume |
113 |
Issue |
23 |
Pages |
234902-234908 |
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
This paper discusses the nucleation behaviour of the CoSi to CoSi2 transformation from cobalt silicide thin films grown by deposition at elevated substrate temperatures ranging from 375 °C to 600 °C. A combination of channelling, real-time Rutherford backscattering spectrometry, real-time x-ray diffraction, and transmission electron microscopy was used to investigate the effect of the deposition temperature on the subsequent formation temperature of CoSi2, its growth behaviour, and the epitaxial quality of the CoSi2 thus formed. The temperature at which deposition took place was observed to exert a significant and systematic influence on both the formation temperature of CoSi2 and its growth mechanism. CoSi films grown at the lowest temperatures were found to increase the CoSi2 nucleation temperature above that of CoSi2 grown by conventional solid phase reaction, whereas the higher deposition temperatures reduced the nucleation temperature significantly. In addition, a systematic change in growth mechanism of the subsequent CoSi2 growth occurs as a function of deposition temperature. First, the CoSi2 growth rate from films grown at the lower reactive deposition temperatures is substantially lower than that grown at higher reactive deposition temperatures, even though the onset of growth occurs at a higher temperature, Second, for deposition temperatures below 450 °C, the growth appears columnar, indicating nucleation controlled growth. Elevated deposition temperatures, on the other hand, render the CoSi2 formation process layer-by-layer which indicates enhanced nucleation of the CoSi2 and diffusion controlled growth. Our results further indicate that this observed trend is most likely related to stress and changes in microstructure introduced during reactive deposition of the CoSi film. The deposition temperature therefore provides a handle to tune the CoSi2 growth mechanism. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos |
000321011700077 |
Publication Date |
2013-06-17 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0021-8979; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
2.068 |
Times cited |
2 |
Open Access |
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Notes |
Fwo; Countatoms |
Approved |
Most recent IF: 2.068; 2013 IF: 2.185 |
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Call Number |
UA @ lucian @ c:irua:109266 |
Serial |
815 |
Permanent link to this record |
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Author |
Malakho, A.; Fargin, E.; Lahaye, M.; Lazoryak, B.; Morozov, V.; Van Tendeloo, G.; Rodriguez, V.; Adamietz, F. |
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Title |
Enhancement of second harmonic generation signal in thermally poled glass ceramic with NaNbO3 nanocrystals |
Type |
A1 Journal article |
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Year |
2006 |
Publication ![sorted by Publication field, ascending order (up)](img/sort_asc.gif) |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
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Volume |
100 |
Issue |
6 |
Pages |
063103,1-5 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
Glass ceramic composites were prepared by bulk crystallization of NaNbO3 in sodium niobium borate glasses. A homogeneous bulk crystallization of the NaNbO3 phase takes place during heat treatments that produces visible-near infrared transparent materials with similar to 30 nm NaNbO3 nanocrystallites. Upon thermal poling, a strong Na+ depleted nonlinear optical thin layer is observed at the anode side that should induce a large internal static electric field. In addition, the chi((2)) response of the poled glass ceramic composites increases from 0.2 up to 1.9 pm/V with the rate of crystallization. Two mechanisms may be considered: a pure structural chi((2)) process connected with the occurrence of a spontaneous ferroelectric polarization or an increase of the chi((3)) response of the nanocrystallites that enhances the electric field induced second harmonic generation process. (c) 2006 American Institute of Physics. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos |
000240876600003 |
Publication Date |
2006-10-03 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0021-8979; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
2.068 |
Times cited |
13 |
Open Access |
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Notes |
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Approved |
Most recent IF: 2.068; 2006 IF: 2.316 |
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Call Number |
UA @ lucian @ c:irua:61005 |
Serial |
1063 |
Permanent link to this record |
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Author |
Vandenberghe, W.; Sorée, B.; Magnus, W.; Fischetti, M.V. |
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Title |
Generalized phonon-assisted Zener tunneling in indirect semiconductors with non-uniform electric fields : a rigorous approach |
Type |
A1 Journal article |
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Year |
2011 |
Publication ![sorted by Publication field, ascending order (up)](img/sort_asc.gif) |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
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Volume |
109 |
Issue |
12 |
Pages |
124503-124503,12 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
A general framework to calculate the Zener current in an indirect semiconductor with an externally applied potential is provided. Assuming a parabolic valence and conduction band dispersion, the semiconductor is in equilibrium in the presence of the external field as long as the electron-phonon interaction is absent. The linear response to the electron-phonon interaction results in a non-equilibrium system. The Zener tunneling current is calculated from the number of electrons making the transition from valence to conduction band per unit time. A convenient expression based on the single particle spectral functions is provided, enabling the evaluation of the Zener tunneling current under any three-dimensional potential profile. For a one-dimensional potential profile an analytical expression is obtained for the current in a bulk semiconductor, a semiconductor under uniform field, and a semiconductor under a non-uniform field using the WKB (Wentzel-Kramers-Brillouin) approximation. The obtained results agree with the Kane result in the low field limit. A numerical example for abrupt p-n diodes with different doping concentrations is given, from which it can be seen that the uniform field model is a better approximation than the WKB model, but a direct numerical treatment is required for low bias conditions. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos |
000292331200134 |
Publication Date |
2011-06-21 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0021-8979; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
2.068 |
Times cited |
41 |
Open Access |
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Notes |
; William Vandenberghe gratefully acknowledges the support of a Ph.D. stipend from the Institute for the Promotion of Innovation through Science and Technology in Flanders (IWT-Vlaanderen). ; |
Approved |
Most recent IF: 2.068; 2011 IF: 2.168 |
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Call Number |
UA @ lucian @ c:irua:90808 |
Serial |
1325 |
Permanent link to this record |
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Author |
Milovanovic, S.P.; Masir, M.R.; Peeters, F.M. |
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Title |
Graphene hall bar with an asymmetric pn-junction |
Type |
A1 Journal article |
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Year |
2013 |
Publication ![sorted by Publication field, ascending order (up)](img/sort_asc.gif) |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
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Volume |
113 |
Issue |
19 |
Pages |
193701-193708 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
We investigated the magnetic field dependence of the Hall and the bend resistances in the ballistic regime for a single layer graphene Hall bar structure containing a pn-junction. When both regions are n-type the Hall resistance dominates and Hall type of plateaus are formed. These plateaus occur as a consequence of the restriction on the angle imposed by Snell's law allowing only electrons with a certain initial angles to transmit though the potential step. The size of the plateau and its position is determined by the position of the potential interface as well as the value of the applied potential. When the second region is p-type, the bend resistance dominates, which is asymmetric in field due to the presence of snake states. Changing the position of the pn-interface in the Hall bar strongly affects these states and therefore the bend resistance is also changed. Changing the applied potential, we observe that the bend resistance exhibits a peak around the charge-neutrality point (CNP), which is independent of the position of the pn-interface, while the Hall resistance shows a sign reversal when the CNP is crossed, which is in very good agreement with a recent experiment [J. R. Williams and C. M. Marcus, Phys. Rev. Lett. 107, 046602 (2011)]. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos |
000319295200022 |
Publication Date |
2013-05-16 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0021-8979; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
2.068 |
Times cited |
7 |
Open Access |
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Notes |
This work was supported by the Flemish Science Foundation (FWO-Vl), the European Science Foundation (ESF) under the EUROCORES Program EuroGRAPHENE within the project CONGRAN, and the Methusalem Foundation of the Flemish government. We acknowledge fruitful discussions with M. Barbier. |
Approved |
Most recent IF: 2.068; 2013 IF: 2.185 |
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Call Number |
UA @ lucian @ c:irua:108999 |
Serial |
1371 |
Permanent link to this record |
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Author |
Dong, H.M.; Xu, W.; Peeters, F.M. |
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Title |
High-field transport properties of graphene |
Type |
A1 Journal article |
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Year |
2011 |
Publication ![sorted by Publication field, ascending order (up)](img/sort_asc.gif) |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
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Volume |
110 |
Issue |
6 |
Pages |
063704,1-063704,6 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
We present a theoretical investigation on the transport properties of graphene in the presence of high dc driving fields. Considering electron interactions with impurities and acoustic and optical phonons in graphene, we employ the momentum- and energy-balance equations derived from the Boltzmann equation to self-consistently evaluate the drift velocity and temperature of electrons in graphene in the linear and nonlinear response regimes. We find that the current-voltage relation exhibits distinctly nonlinear behavior, especially in the high electric field regime. Under the action of high-fields the large source-drain (sd) current density can be achieved and the current saturation in graphene is incomplete with increasing the sd voltage Vsd up to 3 V. Moreover, for high fields, Vsd>0.1 V, the heating of electrons in graphene occurs. It is shown that the sd current and electron temperature are sensitive to electron density and lattice temperature in the graphene device. This study is relevant to the application of graphene as high-field nano-electronic devices such as graphene field-effect transistors. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos |
000295619300059 |
Publication Date |
2011-09-19 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0021-8979; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
2.068 |
Times cited |
17 |
Open Access |
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Notes |
; This work was supported by the National Natural Science Foundation of China (Grant No. 10974206) and the Department of Science and Technology of Yunnan Province. ; |
Approved |
Most recent IF: 2.068; 2011 IF: 2.168 |
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Call Number |
UA @ lucian @ c:irua:93614 |
Serial |
1433 |
Permanent link to this record |
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Author |
Buschmann, V.; Rodewald, M.; Fuess, H.; Van Tendeloo, G.; Schäffer, C. |
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Title |
High resolution electron microscopy study of molecular beam epitaxy grown CoSi2/Si1-xGex/Si(100) heterostructurs |
Type |
A1 Journal article |
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Year |
1999 |
Publication ![sorted by Publication field, ascending order (up)](img/sort_asc.gif) |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
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Volume |
85 |
Issue |
4 |
Pages |
2119-2123 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
Two CoSi2/Si1-xGex/Si(100) heterostructures, with different Ge content, made by molecular beam epitaxy are characterized by high resolution electron microscopy. In general, the interface between the CoSi2 thin film and the Si1-xGex layer is of a high structural quality and the strained Si1-xGex layer exhibits few defects. For both samples, different interface structures are present, although the dominant interfacial configuration is similar to the unreconstructed interface present at the CoSi2/Si(100) interface. Only occasionally (2x1) reconstructed interface regions are found which are just a few nanometers in length. Phenomena such as Ge segregation and the introduction of defects are also observed in the Si1-xGex layer. We attribute the minimal presence of the reconstructed interface to both the (2x8):Si1-xGex(100) surface reconstruction and the Ge segregation that takes place. (C) 1999 American Institute of Physics. [S0021-8979(99)02104-0]. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos |
000078403000017 |
Publication Date |
2002-07-26 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0021-8979; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
2.068 |
Times cited |
6 |
Open Access |
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Notes |
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Approved |
Most recent IF: 2.068; 1999 IF: 2.275 |
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Call Number |
UA @ lucian @ c:irua:103977 |
Serial |
1455 |
Permanent link to this record |