“Long-Term Stability Control of CVD-Grown Monolayer MoS2”. Sar H, Ozden A, Demiroglu I, Sevik C, Perkgoz NK, Ay F, Physica status solidi: rapid research letters 13, 1800687 (2019). http://doi.org/10.1002/PSSR.201800687
Abstract: The structural stability of 2D transition metal dichalcogenide (TMD) formations is of particular importance for their reliable device performance in nano-electronics and opto-electronics. Recent observations show that the CVD-grown TMD monolayers are likely to encounter stability problems such as cracking or fracturing when they are kept under ambient conditions. Here, two different growth configurations are investigated and a favorable growth geometry is proposed, which also sheds light onto the growth mechanism and provides a solution for the stability and fracture formation issues for TMDs specifically for MoS2 monolayers. It is shown that 18 months naturally and thermally aged MoS2 monolayer flakes grown using specifically developed conditions, retain their stability. To understand the mechanism of the structural deterioration, two possible effective mechanisms, S vacancy defects and growth-induced tensile stress, are assessed by the first principle calculations where the role of S vacancy defects in obtaining oxidation resistant MoS2 monolayer flakes is revealed to be rather more critical. Hence, these simulations, time-dependent observations and thermal aging experiments show that durability and stability of 2D MoS2 flakes can be controlled by CVD growth configuration.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
DOI: 10.1002/PSSR.201800687
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“Stabilization of the perovskite phase in the Y-Bi-O system by using a BaBiO₃, buffer layer”. Bouwmeester RL, de Hond K, Gauquelin N, Verbeeck J, Koster G, Brinkman A, Physica status solidi: rapid research letters 13, 1800679 (2019). http://doi.org/10.1002/PSSR.201800679
Abstract: A topological insulating phase has theoretically been predicted for the thermodynamically unstable perovskite phase of YBiO3. Here, it is shown that the crystal structure of the Y-Bi-O system can be controlled by using a BaBiO3 buffer layer. The BaBiO3 film overcomes the large lattice mismatch of 12% with the SrTiO3 substrate by forming a rocksalt structure in between the two perovskite structures. Depositing an YBiO3 film directly on a SrTiO3 substrate gives a fluorite structure. However, when the Y-Bi-O system is deposited on top of the buffer layer with the correct crystal phase and comparable lattice constant, a single oriented perovskite structure with the expected lattice constants is observed.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 11
DOI: 10.1002/PSSR.201800679
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“Carbononics : integrating electronics, photonics and spintronics with graphene quantum dots Preface”. Hawrylak P, Peeters F, Ensslin K, Physica status solidi: rapid research letters 10, 11 (2016). http://doi.org/10.1002/pssr.201670707
Keywords: Editorial; Condensed Matter Theory (CMT)
Impact Factor: 3.032
Times cited: 7
DOI: 10.1002/pssr.201670707
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“Strain engineering of the electronic properties of bilayer graphene quantum dots: Strain engineering of the electronic properties of bilayer graphene quantum dots”. Moldovan D, Peeters FM, Physica status solidi: rapid research letters 10, 39 (2015). http://doi.org/10.1002/pssr.201510228
Abstract: We study the effect of mechanical deformations on the elec- tronic properties of hexagonal flakes of bilayer graphene. The behavior of electrons induced by triaxial strain can be de- scribed by an effective pseudo-magnetic field which is homo- geneous in the center of the flake. We find that in-plane strain, applied to both layers equally, can break the layer symmetry leading to different behavior in the top and bottom layers of graphene. At low energy, just one of the layers feels
the pseudo-magnetic field: the zero-energy pseudo-Landau level is missing in the second layer, thus creating a gap be- tween the lowest non-zero levels. While the layer asymmetry is most significant at zero energy, interaction with the edges of the flake extends the effect to higher pseudo-Landau lev- els. The behavior of the top and bottom layers may be re- versed by rotating the triaxial strain by 60°.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.032
Times cited: 9
DOI: 10.1002/pssr.201510228
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“Current-voltage characteristics of armchair Sn nanoribbons”. van den Broek B, Houssa M, Pourtois G, Afanas'ev VV, Stesmans A, Physica status solidi: rapid research letters 8, 931 (2014). http://doi.org/10.1002/pssr.201400073
Abstract: Two-dimensional group-IV lattices silicene and germanene are known to share many of graphene's remarkable mechanical and electronic properties. Due to the out-of-plane buckling of the former materials, there are more means of electronic funtionalization, e.g. by applying uniaxial strain or an out-of-plane electric field. We consider monolayer hexagonal Sn (stanene) as an ideal candidate to feasibly implement and exploit graphene physics for nanoelectronic applications: with increased out-of-plane buckling and sizable spin-orbit coupling it lends itself to improved Dirac cone engineering. We investigate the ballistic charge transport regime of armchair Sn nanoribbons, classified according to the ribbon width W = {3m – 1, 3m, 3m + 1} with integer m. We study transport through (non-magnetic) armchair ribbons using a combination of density functional theory and non-equilibrium Green's functions. Sn ribbons have earlier current onsets and carry currents 20% larger than C/Si/Ge-nanoribbons as the contact resistance of these ribbons is found to be comparable. ((c) 2014 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 3.032
Times cited: 9
DOI: 10.1002/pssr.201400073
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“Substitutional phosphorus incorporation in nanocrystalline CVD diamond thin films”. Janssen W, Turner S, Sakr G, Jomard F, Barjon J, Degutis G, Lu YG, D'Haen J, Hardy A, Bael MV, Verbeeck J, Van Tendeloo G, Haenen K, Physica status solidi: rapid research letters 8, 705 (2014). http://doi.org/10.1002/pssr.201409235
Abstract: Nanocrystalline diamond (NCD) thin films were produced by chemical vapor deposition (CVD) and doped by the addition of phosphine to the gas mixture. The characterization of the films focused on probing the incorporation and distribution of the phosphorus (P) dopants. Electron microscopy evaluated the overall film morphology and revealed the interior structure of the nanosized grains. The homogeneous films with distinct diamond grains featured a notably low sp(2):sp(3)-ratio as confirmed by Raman spectroscopy. High resolution spectroscopy methods demonstrated a homogeneous P-incorporation, both in-depth and in-plane. The P concentration in the films was determined to be in the order of 10(19) cm(-3) with a significant fraction integrated at substitutional donor sites. (C) 2014 WILEY-VCH Verlag GmbH Co. KGaA, Weinheim
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.032
Times cited: 20
DOI: 10.1002/pssr.201409235
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“RRAMs based on anionic and cationic switching : a short overview”. Clima S, Sankaran K, Chen YY, Fantini A, Celano U, Belmonte A, Zhang L, Goux L, Govoreanu B, Degraeve R, Wouters DJ, Jurczak M, Vandervorst W, Gendt SD, Pourtois G;, Physica status solidi: rapid research letters 8, 501 (2014). http://doi.org/10.1002/pssr.201409054
Abstract: Resistive random access memories are emerging as a new type of memory that has the potential to combine both the speed of volatile and the retention of nonvolatile memories. It operates based on the formation/dissolution of a low-resistivity filament being constituted of either metallic ions or atomic vacancies within an insulating matrix. At present, the mechanisms and the parameters controlling the performances of the device remain unclear. In that respect, first-principles simulations provide useful insights on the atomistic mechanisms, the thermodynamic and kinetics factors that modulate the material conductivity, providing guidance into the engineering of the operation of the device. In this paper, we review the current state-of-the-art knowledge on the atomistic switching mechanisms driving the operation of copper-based conductive bridge RRAM and HfOx valence change RRAM. [GRAPHICS] Conceptual illustration of the RRAM device with the filament formation and disruption during its operation. AE/IM/CE are the active electrode/insulating matrix/counterelectrode. The blue circles represent the conducting defects. (C) 2014 WILEY-VCH Verlag GmbH Co. KGaA, Weinheim
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 3.032
Times cited: 28
DOI: 10.1002/pssr.201409054
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