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Author |
Title |
Year |
Publication |
Volume |
Times cited |
Additional Links |
Links |
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Lioutas, C.B.; Manolikas, C.; Van Tendeloo, G.; van Landuyt, J. |
A 2a2b3c superstructure in hexagonal NiS1-x: a study by means of electron diffraction and HREM |
1993 |
Journal of crystal growth |
126 |
4 |
UA library record; WoS full record; WoS citing articles |
|
|
Stuer, C.; Steegen, A.; van Landuyt, J.; Bender, H.; Maex, K. |
Characterisation of the local stress induced by shallow trench isolation and CoSi2 silicidation |
2001 |
Institute of physics conference series |
|
|
UA library record; WoS full record; |
|
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Yasuda, K.; Hisatsune, K.; Udoh, K.; Tanaka, Y.; Van Tendeloo, G.; van Landuyt, J. |
Characteristic mosaic texture related to orderingin AuCu-9at.%Ag pseudobinary alloy |
1992 |
Dentistry in Japan |
29 |
|
UA library record |
|
|
Goessens, C.; Schryvers, D.; van Landuyt, J.; Amelinckx, S.; Geuens, I.; Gijbels, R.; Jacob, W.; Verbeeck, A.; de Keyzer, R. |
Characterization of crystal defects and analysis of iodide distribution in mixed tabular silver halide grains by conventional transmission electron microscopy, X-ray diffractometry and back-scattered electron imaging |
1991 |
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UA library record |
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Goessens, C.; Schryvers, D.; van Landuyt, J.; Amelinckx, S.; Verbeeck, A.; de Keyzer, R. |
Characterization of crystal defects in mixed tabular silver halide grains by conventional transmission electron microscopy and X-ray diffractometry |
1991 |
Journal of crystal growth |
110 |
40 |
UA library record; WoS full record; WoS citing articles |
|
|
Volkov, V.V.; van Landuyt, J.; Marushkin, K.M.; Gijbels, R.; Férauge, C.; Vasilyev, M.G.; Shelyakin, A.A.; Sokolovsky, A.A. |
Characterization of LPE grown InGaAsP/InP heterostructures: IR-LED at 1.66 μm used for the remote monitoring of methane gas |
1997 |
Journal of crystal growth |
173 |
4 |
UA library record; WoS full record; WoS citing articles |
|
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van Landuyt, J.; Van Tendeloo, G. |
Charcaterization by high-resolution transmission electron microscopy |
1998 |
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UA library record; WoS full record; |
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De Gryse, O.; Clauws, P.; Vanhellemont, J.; Lebedev, O.; van Landuyt, J.; Simoen, E.; Claeys, C. |
Chemical and structural characterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy and transmission electron microscopy |
2002 |
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UA library record; WoS full record; |
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Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
Clustering of vacancies on {113} planes in Si layers close to Si-Si3N4 interfaces and further aggregation of self-interstitials inside vacancy clusters during electron irradiation |
1999 |
Institute of physics conference series
T2 – Conference on Microscopy of Semiconducting Materials, MAR 22-25, 1999, UNIV OXFORD, OXFORD, ENGLAND |
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UA library record; WoS full record; |
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Buschmann, V.; Schryvers, D.; van Landuyt, J.; van Roost, C.; de Keyzer, R. |
A comparative investigation of replication techniques used for the study of (S+Au) sensitized AgBr microcrystals |
1996 |
The journal of imaging science and technology |
40 |
4 |
UA library record; WoS full record; WoS citing articles |
|
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Vantomme, A.; Wu, M.F.; Hogg, S.; van Landuyt, J.; et al. |
Comparative study of structural properties and photoluminescence in InGaN layers with a high In content |
2000 |
Internet journal of nitride semiconductor research
T2 – Symposium on GaN and Related Alloys Held at the MRS Fall Meeting, NOV 29-DEC 03, 1999, BOSTON, MASSACHUSETTS |
5 |
|
UA library record; WoS full record; |
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Chen, J.H.; van Dyck, D.; op de Beeck, M.; van Landuyt, J. |
Computational comparisons between the conventional multislice method and the third-order multislice method for calculating high-energy electron diffraction and imaging |
1997 |
Ultramicroscopy |
69 |
11 |
UA library record; WoS full record; WoS citing articles |
|
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Schryvers, D.; Goessens, C.; van Renterghem, W.; van Landuyt, J.; de Keyzer, R. |
Conventional and HREM study of structural defects in nanostructured silver halides |
1998 |
|
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UA library record |
|
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van Landuyt, J.; Van Tendeloo, G.; Amelinckx, S.; Zhang, X.F.; Zhang, X.B.; Luyten, W. |
Crystallography of fullerites and related graphene textures |
1994 |
Materials science forum |
150/151 |
|
UA library record; WoS full record; |
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Van Renterghem, W.; Schryvers, D.; van Landuyt, J.; Bollen, D.; Van Roost, C.; De Keyzer, R.B. |
Defect induced thickness growth in silver chloride (111) tabular crystals: a TEM study |
2000 |
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UA library record; WoS full record; |
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van Renterghem, W.; Schryvers, D.; van Landuyt, J.; van Roost, C. |
Defect related growth of tabular AgCl(100) crystals: a TEM study |
1998 |
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UA library record; WoS full record; |
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van Renterghem, W.; Goessens, C.; Schryvers, D.; van Landuyt, J.; Verrept, P.; Bollen, D.; van Roost, C.; de Keyzer, R. |
Defects in AgCl and AgBr(100) tabular crystals studied by TEM |
1998 |
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UA library record |
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De Meulenaere, P.; Van Tendeloo, G.; van Landuyt, J. |
Direct observation of clusters in some FCC alloys by HREM |
1994 |
Icem |
13 |
|
UA library record; WoS full record; |
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Hens, S.; Bender, H.; Donaton, R.A.; Maex, K.; Vanhaelemeersch, S.; van Landuyt, J. |
EFTEM study of plasma etched low-k Si-O-C dielectrics |
2001 |
Institute of physics conference series
T2 – Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, UNIV OXFORD, OXFORD, ENGLAND |
|
|
UA library record; WoS full record; |
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Goessens, C.; Schryvers, D.; van Dyck, D.; van Landuyt, J.; de Keyzer, R. |
Electron diffraction evidence for ordering of interstitial silver ions in silver bromide microcrystals |
1994 |
Icem |
13 |
|
UA library record; WoS full record; |
|
|
Goessens, C.; Schryvers, D.; van Landuyt, J.; de Keyzer, R. |
Electron microscopical investigation of tetrahedral-shaped AgBr microcrystals |
1997 |
Journal of crystal growth |
172 |
15 |
UA library record; WoS full record; WoS citing articles |
|
|
Schryvers, D.; de Saegher, B.; van Landuyt, J. |
Electron microscopy and diffraction study of the composition dependency of the 3R microtwinned martensite in Ni-Al |
1991 |
Materials research bulletin |
26 |
11 |
UA library record; WoS full record; WoS citing articles |
|
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Van Tendeloo, G.; van Landuyt, J.; Amelinckx, S. |
Electron microscopy of fullerenes and fullerene related structures |
1994 |
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UA library record |
|
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Van Tendeloo, G.; Goessens, C.; Schryvers, D.; van Haverbergh, J.; de Veirman, A.; van Landuyt, J. |
Electron microscopy of interfaces in new materials |
1991 |
|
|
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UA library record |
|
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Amelinckx, S.; van Dyck, D.; van Landuyt, J.; Van Tendeloo, G. |
Electron microscopy: principles and fundamentals |
1997 |
|
|
|
UA library record |
|
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Schryvers, D.; van Landuyt, J.T. |
Electron microscopy study of twin sequences and branching in Ni66Al34 3r martensite |
1993 |
Proceedings Of The International Conference On Martensitic Transformations (icomat-92) |
|
1 |
UA library record; WoS full record; WoS citing articles |
|
|
Buschmann, V.; Schryvers, D.; van Landuyt, J.; van Roost, C. |
EM study of sensitisation of silver halide grains |
1994 |
Icem |
13 |
|
UA library record; WoS full record; |
|
|
Romano-Rodriguez, A.; Perez-Rodriguez, A.; Serre, C.; van Landuyt, J.; et al. |
Epitaxial growth of \beta-SiC on ion-beam synthesized \beta-SiC : structural characterization |
2000 |
Materials science forum
T2 – International Conference on Silicon Carbide and Related Materials, OCT 10-15, 1999, RES TRIANGLE PK, NORTH CAROLINA |
338-3 |
2 |
UA library record; WoS full record; WoS citing articles |
|
|
Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
Extended defects formation in Si crystals by clustering of intrinsic point defects studied by in-situ irradiation in an HREM |
1999 |
Physica status solidi: A: applied research |
171 |
40 |
UA library record; WoS full record; WoS citing articles |
|
|
Frangis, N.; Stoemenos, J.; van Landuyt, J.; Nejim, A.; Hemment, P.L.F. |
The formation of 3C-SiC in crystalline Si by carbon implantation at 9500C and annealing: a structural study |
1997 |
Journal of crystal growth |
181 |
9 |
UA library record; WoS full record; WoS citing articles |
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