“Accurate description of the van der Waals interaction of an electron-positron pair with the surface of a topological insulator”. Saniz R, Vercauteren S, Lamoen D, Partoens B, Barbiellini B, Journal of physics : conference series 505, 012002 (2014). http://doi.org/10.1088/1742-6596/505/1/012002
Abstract: Positrons can be trapped in localized states at the surface of a material, and thus quite selectively interact with core or valence surface electrons. Hence, advanced surface positron spectroscopy techniques can present the ideal tools to study a topological insulator, where surface states play a fundamental role. We analyze the problem of a positron at a TI surface, assuming that it is a weakly physisorbed positronium (Ps) atom. To determine if the surface of interest in a material can sustain such a physisorption, an accurate description of the underlying van der Waals (vdW) interaction is essential. We have developed a first-principles parameterfree method, based on the density functional theory, to extract key parameters determining the vdW interaction potential between a Ps atom and the surface of a given material. The method has been successfully applied to quartz and preliminary results on Bi2Te2Se indicate the existence of a positron surface state. We discuss the robustness of our predictions versus the most relevant approximations involved in our approach.
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT)
Times cited: 2
DOI: 10.1088/1742-6596/505/1/012002
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“Electronic structure and band gap of zinc spinel oxides beyond LDA : ZnAl2O4, ZnGa2O4 and ZnIn2O4”. Dixit H, Tandon N, Cottenier S, Saniz R, Lamoen D, Partoens B, van Speybroeck V, Waroquier M, New journal of physics 13, 063002 (2011). http://doi.org/10.1088/1367-2630/13/6/063002
Abstract: We examine the electronic structure of the family of ternary zinc spinel oxides ZnX2O4 (X=Al, Ga and In). The band gap of ZnAl2O4 calculated using density functional theory (DFT) is 4.25 eV and is overestimated compared with the experimental value of 3.83.9 eV. The DFT band gap of ZnGa2O4 is 2.82 eV and is underestimated compared with the experimental value of 4.45.0 eV. Since DFT typically underestimates the band gap in the oxide system, the experimental measurements for ZnAl2O4 probably require a correction. We use two first-principles techniques capable of describing accurately the excited states of semiconductors, namely the GW approximation and the modified BeckeJohnson (MBJ) potential approximation, to calculate the band gap of ZnX2O4. The GW and MBJ band gaps are in good agreement with each other. In the case of ZnAl2O4, the predicted band gap values are >6 eV, i.e. ~2 eV larger than the only reported experimental value. We expect future experimental work to confirm our results. Our calculations of the electron effective masses and the second band gap indicate that these compounds are very good candidates to act as transparent conducting host materials.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT)
Impact Factor: 3.786
Times cited: 98
DOI: 10.1088/1367-2630/13/6/063002
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“Refinement of chemically sensitive structure factors using parallel and convergent beam electron nanodiffraction”. Müller K, Schowalter M, Rosenauer A, Jansen J, Tsuda K, Titantah JT, Lamoen D, Journal of physics : conference series 209, 012025 (2010). http://doi.org/10.1088/1742-6596/209/1/012025
Abstract: We introduce a new method to measure structure factors from parallel beam electron diffraction (PBED) patterns. Bloch wave refinement routines were developed which can minimise the difference between simulated and experimental Bragg intensities via variation of structure factors, Debye parameters, specimen thickness and -orientation. Due to plane wave illumination, the PBED refinement is highly efficient not only in computational respect, but also concerning the experimental effort since energy filtering is shown to have no significant effect on the refinement results. The PBED method was applied to simulated GaAs diffraction patterns to derive systematic errors and rules for the identification of plausible refinement results. The evaluation of experimental GaAs PBED patterns yields a 200 X-ray structure factor of -6.33±0.14. Additionally, we obtained -6.35±0.13 from two-dimensional convergent beam electron diffraction refinements. Both results confirm density functional theory calculations published by Rosenauer et al. and indicate the inaccuracy of isolated atom scattering data, which is crucial e.g. for the composition evaluation by lattice fringe analysis.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
DOI: 10.1088/1742-6596/209/1/012025
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“High throughput first-principles calculations of bixbyite oxides for TCO applications”. Sarmadian N, Saniz R, Partoens B, Lamoen D, Volety K, Huyberechts G, Paul J, Physical chemistry, chemical physics 16, 17724 (2014). http://doi.org/10.1039/c4cp02788d
Abstract: We present a high-throughput computing scheme based on density functional theory (DFT) to generate a class of oxides and screen them with the aim of identifying those that might be electronically appropriate for transparent conducting oxide (TCO) applications. The screening criteria used are a minimum band gap to ensure sufficient transparency, a band edge alignment consistent with easy n- or p-type dopability, and a minimum thermodynamic phase stability to be experimentally synthesizable. Following this scheme we screened 23 binary and 1518 ternary bixbyite oxides in order to identify promising candidates, which can then be a subject of an in-depth study. The results for the known TCOs are in good agreement with the reported data in the literature. We suggest a list of several new potential TCOs, including both n- and p-type compounds.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT)
Impact Factor: 4.123
Times cited: 23
DOI: 10.1039/c4cp02788d
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“Local boron environment in B-doped nanocrystalline diamond films”. Turner S, Lu Y-G, Janssens SD, da Pieve F, Lamoen D, Verbeeck J, Haenen K, Wagner P, Van Tendeloo G, Nanoscale 4, 5960 (2012). http://doi.org/10.1039/c2nr31530k
Abstract: Thin films of heavily B-doped nanocrystalline diamond (B:NCD) have been investigated by a combination of high resolution annular dark field scanning transmission electron microscopy and spatially resolved electron energy-loss spectroscopy performed on a state-of-the-art aberration corrected instrument to determine the B concentration, distribution and the local B environment. Concentrations of [similar]1 to 3 at.% of boron are found to be embedded within individual grains. Even though most NCD grains are surrounded by a thin amorphous shell, elemental mapping of the B and C signal shows no preferential embedding of B in these amorphous shells or in grain boundaries between the NCD grains, in contrast with earlier work on more macroscopic superconducting polycrystalline B-doped diamond films. Detailed inspection of the fine structure of the boron K-edge and comparison with density functional theory calculated fine structure energy-loss near-edge structure signatures confirms that the B atoms present in the diamond grains are substitutional atoms embedded tetrahedrally into the diamond lattice.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 7.367
Times cited: 39
DOI: 10.1039/c2nr31530k
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“Native point defects in CuIn1-xGaxSe2 : hybrid density functional calculations predict the origin of p- and n-type conductivity”. Bekaert J, Saniz R, Partoens B, Lamoen D, Physical chemistry, chemical physics 16, 22299 (2014). http://doi.org/10.1039/c4cp02870h
Abstract: We have performed a first-principles study of the p- and n-type conductivity in CuIn1−xGaxSe2 due to native point defects, based on the HSE06 hybrid functional. Band alignment shows that the band gap becomes larger with x due to the increasing conduction band minimum, rendering it hard to establish n-type conductivity in CuGaSe2. From the defect formation energies, we find that In/GaCu is a shallow donor, while VCu, VIn/Ga and CuIn/Ga act as shallow acceptors. Using the total charge neutrality of ionized defects and intrinsic charge carriers to determine the Fermi level, we show that under In-rich growth conditions InCu causes strongly n-type conductivity in CuInSe2. Under increasingly In-poor growth conditions, the conductivity type in CuInSe2 alters to p-type and compensation of the acceptors by InCu reduces, as also observed in photoluminescence experiments. In CuGaSe2, the native acceptors pin the Fermi level far away from the conduction band minimum, thus inhibiting n-type conductivity. On the other hand, CuGaSe2 shows strong p-type conductivity under a wide range of Ga-poor growth conditions. Maximal p-type conductivity in CuIn1−xGaxSe2 is reached under In/Ga-poor growth conditions, in agreement with charge concentration measurements on samples with In/Ga-poor stoichiometry, and is primarily due to the dominant acceptor CuIn/Ga.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT)
Impact Factor: 4.123
Times cited: 43
DOI: 10.1039/c4cp02870h
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“The origin of p-type conductivity in ZnM2O4 (M = Co, Rh, Ir) spinels”. Amini MN, Dixit H, Saniz R, Lamoen D, Partoens B, Physical chemistry, chemical physics 16, 2588 (2014). http://doi.org/10.1039/c3cp53926a
Abstract: ZnM2O4 (M = Co, Rh, Ir) spinels are considered as a class of potential p-type transparent conducting oxides (TCOs). We report the formation energy of acceptor-like defects using first principles calculations with an advanced hybrid exchange-correlation functional (HSE06) within density functional theory (DFT). Due to the discrepancies between the theoretically obtained band gaps with this hybrid functional and the – scattered – experimental results, we also perform GW calculations to support the validity of the description of these spinels with the HSE06 functional. The considered defects are the cation vacancy and antisite defects, which are supposed to be the leading source of disorder in the spinel structures. We also discuss the band alignments in these spinels. The calculated formation energies indicate that the antisite defects ZnM (Zn replacing M, M = Co, Rh, Ir) and VZn act as shallow acceptors in ZnCo2O4, ZnRh2O4 and ZnIr2O4, which explains the experimentally observed p-type conductivity in those systems. Moreover, our systematic study indicates that the ZnIr antisite defect has the lowest formation energy in the group and it corroborates the highest p-type conductivity reported for ZnIr2O4 among the group of ZnM2O4 spinels. To gain further insight into factors affecting the p-type conductivity, we have also investigated the formation of localized small polarons by calculating the self-trapping energy of the holes.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT)
Impact Factor: 4.123
Times cited: 47
DOI: 10.1039/c3cp53926a
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“The role of the VZn-NO-H complex in the p-type conductivity in ZnO”. Amini MN, Saniz R, Lamoen D, Partoens B, Physical chemistry, chemical physics 17, 5485 (2015). http://doi.org/10.1039/c4cp05894a
Abstract: Past research efforts aiming at obtaining stable p-type ZnO have been based on complexes involving nitrogen doping. A recent experiment by (J. G. Reynolds et al., Appl. Phys. Lett., 2013, 102, 152114) demonstrated a significant ([similar]1018 cm−3) p-type behavior in N-doped ZnO films after appropriate annealing. The p-type conductivity was attributed to a VZnNOH shallow acceptor complex, formed by a Zn vacancy (VZn), N substituting O (NO), and H interstitial (Hi). We present here a first-principles hybrid functional study of this complex compared to the one without hydrogen. Our results confirm that the VZnNOH complex acts as an acceptor in ZnO. We find that H plays an important role, because it lowers the formation energy of the complex with respect to VZnNO, a complex known to exhibit (unstable) p-type behavior. However, this additional H atom also occupies the hole level at the origin of the shallow behavior of VZnNO, leaving only two states empty higher in the band gap and making the VZnNOH complex a deep acceptor. Therefore, we conclude that the cause of the observed p-type conductivity in experiment is not the presence of the VZnNOH complex, but probably the formation of the VZnNO complex during the annealing process.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT)
Impact Factor: 4.123
Times cited: 20
DOI: 10.1039/c4cp05894a
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“Computation and parametrization of the temperature dependence of Debye-Waller factors for group IV, III-V and II-VI semiconductors”. Schowalter M, Rosenauer A, Titantah JT, Lamoen D, Acta crystallographica: section A: foundations of crystallography 65, 5 (2009). http://doi.org/10.1107/S0108767308031437
Abstract: We calculated the temperature dependence of the Debye-Waller factors for a variety of group IV, III-V and II-VI semiconductors from 0.1 to 1000 K. The approach used to fit the temperature dependence is described and resulting fit parameters are tabulated for each material. The Debye-Waller factors are deduced from generalized phonon densities of states which were derived from first principles using the WIEN2k and the ABINIT codes.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 5.725
Times cited: 51
DOI: 10.1107/S0108767308031437
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“Electron-diffraction structure refinement of Ni4Ti3 precipitates in Ni52Ti48”. Tirry W, Schryvers D, Jorissen K, Lamoen D, Acta crystallographica: section B: structural science 62, 966 (2006). http://doi.org/10.1107/S0108768106036457
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 30
DOI: 10.1107/S0108768106036457
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“Orientational order and disorder in solid C60 : theory and diffraction experiments”. Michel KH, Lamoen D, David WIF, Acta crystallographica: section A: foundations of crystallography 51, 365 (1995). http://doi.org/10.1107/S0108767394013280
Abstract: Starting from a microscope model of the intermolecular potential, a unified description is presented of the Bragg scattering law in the orientationally disordered and in the ordered phase of solid C-60. The orientational structure factor is expanded in terms of symmetry-adapted surface harmonics. The expansion coefficients are calculated from theory and compared with experiment Their temperature evolution is studied in the disordered phase at the 260 K transitions and in the ordered phase. In the ordered phase, new results from high-resolution neutron powder diffraction are given. In the disordered phase, space group Fm $($) over bar$$ 3m, the reflections have A(1g) symmetry; in the ordered phase, space group Pa $$($) over bar 3, reflections of T-2g symmetry appear and in addition the A(1g) reflections are renormalized. The orientational density distribution is calculated. The effective crystal-field potential is constructed, its temperature evolution in the ordered phase is studied and related to the occurrence of an orientational glass.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.307
Times cited: 14
DOI: 10.1107/S0108767394013280
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“Temperature-dependent Debye-Waller factors for semiconductors with the wurtzite-type structure”. Schowalter M, Rosenauer A, Titantah JT, Lamoen D, Acta crystallographica: section A: foundations of crystallography 65, 227 (2009). http://doi.org/10.1107/S0108767309004966
Abstract: We computed Debye-Waller factors in the temperature range from 0.1 to 1000 K for AlN, GaN, InN, ZnO and CdO with the wurtzite-type structure. The Debye-Waller factors were derived from phonon densities of states obtained from Hellmann-Feynman forces computed within the density-functional-theory formalism. The temperature dependences of the Debye-Waller factors were fitted and fit parameters are given.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 5.725
Times cited: 23
DOI: 10.1107/S0108767309004966
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“Density functional theory calculations of energy-loss carbon near-edge spectra of small diameter armchair and zigzag nanotubes: core-hole, curvature, and momentum-transfer orientation effects”. Titantah JT, Jorissen K, Lamoen D, Physical review : B : condensed matter and materials physics 69, 125406 (2004). http://doi.org/10.1103/PhysRevB.69.125406
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 28
DOI: 10.1103/PhysRevB.69.125406
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“Determination of the electron effective band mass in amorphous carbon from density-functional theory calculations”. Titantah JT, Lamoen D, Physical review : B : condensed matter and materials physics 70, 033101 (2004). http://doi.org/10.1103/PhysRevB.70.033101
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 24
DOI: 10.1103/PhysRevB.70.033101
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“Effect of charge transfer on EELS integrated cross sections in Mn and Ti oxides”. Potapov PL, Jorissen K, Schryvers D, Lamoen D, Physical review : B : condensed matter and materials physics 70, 045106 (2004). http://doi.org/10.1103/PhysRevB.70.045106
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 28
DOI: 10.1103/PhysRevB.70.045106
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“Electronic structure, screening and charging effects at a metal/organic tunneling junction: a first principles study”. Lamoen D, Ballone P, Parrinello M, Physical review B 54, 5097 (1996)
Keywords: A1 Journal article; Electron Microscopy for Materials Science (EMAT);
Impact Factor: 3.736
Times cited: 33
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“Energy-loss near-edge structure changes with bond length in carbon systems”. Titantah JT, Lamoen D, Physical review : B : condensed matter and materials physics 72, 193104 (2005). http://doi.org/10.1103/PhysRevB.72.193104
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 24
DOI: 10.1103/PhysRevB.72.193104
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“First-principles calculations of 002 structure factors for electron scattering in strained InxGa1-xAs”. Rosenauer A, Schowalter M, Glas F, Lamoen D, Physical Review B 72, 1 (2005). http://doi.org/10.1103/PhysRevB.72.085326
Abstract: This work provides values of electron scattering 002 structure factors for InxGa1-xAs as a function of the In concentration x=0 to 1. These results allow accurate compositional analysis of pseudomorphically grown InxGa1-xAs/GaAs layers by transmission electron microscopy methods relying on the chemical sensitivity of the (002) beam. The calculations go beyond the limits of the isolated atom approximation, because they take into account charge redistribution effects between atomic sites in the crystal, strain, and static atomic displacements. The computations were performed by the full potential linearized augmented plane-wave method using a generalized gradient approximation for the exchange and correlation part of the potential. The calculations of strained InxGa1-xAs correspond to the strain state in specimens with large, small, and intermediate thickness in the electron beam direction. Additionally, the effect of static atomic displacements is taken into account. All results are listed in a parameterized form. The calculated 002 structure factor vanishes at an In concentration of 16.4%. This value is in a good agreement with previously reported experimental measurements. Hence, our results are a significant improvement with respect to the isolated atom approximation which is conventionally applied in transmission electron microscopy simulations, and which predicts a value of 22.5%.
Keywords: A1 Journal article; Electron Microscopy for Materials Science (EMAT);
Impact Factor: 3.836
Times cited: 42
DOI: 10.1103/PhysRevB.72.085326
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“High pressure limiting forms of the zero-temperature equations of state of Ta and Pu from relativistic Thomas-Fermi theory”. Leys FE, March NH, Lamoen D, Physical Review B 67, 064109 (2003). http://doi.org/10.1103/PhysRevB.67.064109
Keywords: A1 Journal article; Electron Microscopy for Materials Science (EMAT);
Impact Factor: 3.836
Times cited: 1
DOI: 10.1103/PhysRevB.67.064109
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“Microscopic theory of thermoelastic phenomena and pressure dependence in solid C60”. Lamoen D, Michel KH, Physical review : B : condensed matter and materials physics 48, 807 (1993). http://doi.org/10.1103/PhysRevB.48.807
Abstract: A microscopic theory for the coupling of molecular orientations with acoustic lattice displacements is proposed. The relevant interaction is quadratic in the orientational-order-parameter variables and linear in longitudinal strains. The coupling is evaluated for a complex molecular structure. The intermolecular potential is obtained from interaction centers placed at nuclei and at the centers of interatomic bonds. The free energy is derived and the experimental consequences of the theory are studied. The Clausius-Clapeyron equation for orientational melting is obtained. The theory explains the decrease of the lattice constant at the first-order phase transition and the increase of the transition temperature with applied pressure.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.736
Times cited: 32
DOI: 10.1103/PhysRevB.48.807
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“Self consistent nonlocal linear-response theory of a relativistic electron gas”. Leys FE, March NH, Angilella GGN, Lamoen D, Physical Review B 67, 113105 (2003). http://doi.org/10.1103/PhysRevB.67.113105
Keywords: A1 Journal article; Electron Microscopy for Materials Science (EMAT);
Impact Factor: 3.836
DOI: 10.1103/PhysRevB.67.113105
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“Size effects and strain state of Ga1-xInxAs/GaAs multiple quantum wells: Monte Carlo study”. Titantah JT, Lamoen D, Schowalter M, Rosenauer A, Physical review : B : condensed matter and materials physics 78, 165326 (2008). http://doi.org/10.1103/PhysRevB.78.165326
Abstract: The effect of the size of the GaAs barrier and the Ga1−xInxAs well on the structural properties of a Ga1−xInxAs/GaAs multiple quantum well structure is investigated using the Metropolis Monte Carlo approach based on a well-parametrized Tersoff potential. It is found that within the well the Ga-As and In-As bond lengths undergo contractions whose magnitude increases with increasing In content in sharp contrast with bond-length variations in the bulk Ga1−xInxAs systems. For fixed barrier size and In content, the contraction of the bonds is also found to increase with increasing size of the well. Using the local atomic structure of the heterostructures, a more local analysis of the strain state of the systems is given and comparison with the prediction of macroscopic continuum elasticity theory shows deviations from the latter.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 5
DOI: 10.1103/PhysRevB.78.165326
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“Technique for the sp2/sp3 characterization of carbon materials: ab initio calculation of near-edge structure in electron energy-loss spectra”. Titantah JT, Lamoen D, Physical review : B : condensed matter and materials physics 70, 033101 (2004). http://doi.org/10.1103/PhysRevB.70.075115
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 41
DOI: 10.1103/PhysRevB.70.075115
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“Temperature effect on the 002 structure factor of ternary Ga1-xInxAs crystals”. Titantah JT, Lamoen D, Schowalter M, Rosenauer A, Physical review : B : condensed matter and materials physics 76, 073303 (2007). http://doi.org/10.1103/PhysRevB.76.073303
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 3
DOI: 10.1103/PhysRevB.76.073303
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“Quantitative determination of the crystal structure of Ni4Ti3 precipitates”. Tirry W, Schryvers D, Jorissen K, Lamoen D, Materials science and engineering: part A: structural materials: properties, microstructure and processing 438, 517 (2006). http://doi.org/10.1016/j.msea.2006.02.063
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.094
Times cited: 7
DOI: 10.1016/j.msea.2006.02.063
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“The effect of hydrogen on the electronic and bonding properties of amorphous carbon”. Titantah JT, Lamoen D, Neyts E, Bogaerts A, Journal of physics : condensed matter 18, 10803 (2006). http://doi.org/10.1088/0953-8984/18/48/007
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.649
Times cited: 13
DOI: 10.1088/0953-8984/18/48/007
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“The effect of temperature on the structural, electronic and optical properties of sp3-rich amorphous carbon”. Titantah JT, Lamoen D, Journal of physics : condensed matter 20, 035216 (2008). http://doi.org/10.1088/0953-8984/20/03/035216
Abstract: The effect of temperature on the structural, electronic and optical properties of dense tetrahedral amorphous carbon made of similar to 80% sp(3)-bonded atoms is investigated using a combination of the classical Monte Carlo technique and density functional theory. A structural transformation accompanied by a slight decrease of the sp(3) fraction is evidenced above a temperature of about 600 degrees C. A structural analysis in combination with energy-loss near-edge structure calculations shows that beyond this temperature, the sp(2)-bonded C sites arrange themselves so as to enhance the conjugation of the p electrons. The Tauc optical band gap deduced from the calculated dielectric function shows major changes beyond this temperature in accordance with experimental results. Energy-loss near-edge structure and band gap calculations additionally reveal a massive destabilization of the of sp(3) bonding phase in favour of sp(2) bonding at a temperature of about 1300 degrees C which agrees very well with the reported value of 1100 degrees C.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.649
Times cited: 11
DOI: 10.1088/0953-8984/20/03/035216
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“Electronic structure of transparent oxides with the Tran-Blaha modified Becke-Johnson potential”. Dixit H, Saniz R, Cottenier S, Lamoen D, Partoens B, Journal of physics : condensed matter 24, 205503 (2012). http://doi.org/10.1088/0953-8984/24/20/205503
Abstract: We present electronic band structures of transparent oxides calculated using the Tran-Blaha modified Becke-Johnson (TB-mBJ) potential. We studied the basic n-type conducting binary oxides In2O3, ZnO, CdO and SnO2 along with the p-type conducting ternary oxides delafossite CuXO2 (X = Al, Ga, In) and spinel ZnX2O4 (X = Co, Rh, Ir). The results are presented for calculated band gaps and effective electron masses. We discuss the improvements in the band gap determination using TB-mBJ compared to the standard generalized gradient approximation (GGA) in density functional theory (DFT) and also compare the electronic band structure with available results from the quasiparticle GW method. It is shown that the calculated band gaps compare well with the experimental and GW results, although the electron effective mass is generally overestimated.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT)
Impact Factor: 2.649
Times cited: 113
DOI: 10.1088/0953-8984/24/20/205503
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“Gradient expansion and beyond for stress tensor and tangential pressure deficit through a planar liquid-vapour interface”. Lamoen D, March NH, Physics And Chemistry Of Liquids 38, 495 (2000). http://doi.org/10.1080/00319100008030296
Keywords: A1 Journal article; Electron Microscopy for Materials Science (EMAT);
Impact Factor: 1.145
Times cited: 1
DOI: 10.1080/00319100008030296
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“Local structure and oxidation state of uranium in some ternary oxides: X-ray absorption analysis”. Soldatov AV, Lamoen D, Konstantinović, MJ, van den Berghe S, Scheinost AC, Verwerft M, Journal Of Solid State Chemistry 180, 54 (2007). http://doi.org/10.1016/j.jssc.2006.08.038
Keywords: A1 Journal article; Electron Microscopy for Materials Science (EMAT);
Impact Factor: 2.299
Times cited: 60
DOI: 10.1016/j.jssc.2006.08.038
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