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Author Valkering, A.M.C.; Sommerfeld, P.K.H.; van de Ven, R.A.M.; van der Heijden, R.W.; Blom, F.A.P.; Lea, M.J.; Peeters, F.M.
Title Hall magnetocapitance in two-dimensional electron systems Type A1 Journal article
Year 1998 Publication Physical review letters Abbreviated Journal Phys Rev Lett
Volume 81 Issue Pages 5398-5401
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication (down) New York, N.Y. Editor
Language Wos 000077511700036 Publication Date 2002-07-27
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0031-9007;1079-7114; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 8.462 Times cited 4 Open Access
Notes Approved Most recent IF: 8.462; 1998 IF: 6.017
Call Number UA @ lucian @ c:irua:24153 Serial 1402
Permanent link to this record
 
 
Author Peeters, F.M.; Li, X.Q.
Title Hall magnetometer in the ballistic regime Type A1 Journal article
Year 1998 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume 72 Issue Pages 572-574
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract
Address
Corporate Author Thesis
Publisher American Institute of Physics Place of Publication (down) New York, N.Y. Editor
Language Wos 000071704700021 Publication Date 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 119 Open Access
Notes Approved Most recent IF: 3.411; 1998 IF: 3.349
Call Number UA @ lucian @ c:irua:24172 Serial 1403
Permanent link to this record
 
 
Author Baelus, B.J.; Peeters, F.M.
Title Hall potentiometer in the ballistic regime Type A1 Journal article
Year 1999 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume 74 Issue Pages 1600-1602
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract
Address
Corporate Author Thesis
Publisher American Institute of Physics Place of Publication (down) New York, N.Y. Editor
Language Wos 000079078200032 Publication Date 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 13 Open Access
Notes Approved Most recent IF: 3.411; 1999 IF: 4.184
Call Number UA @ lucian @ c:irua:24170 Serial 1404
Permanent link to this record
 
 
Author Zhang, Q.-Z.; Wang, Y.-N.; Bogaerts, A.
Title Heating mode transition in a hybrid direct current/dual-frequency capacitively coupled CF4 discharge Type A1 Journal article
Year 2014 Publication Journal of applied physics Abbreviated Journal J Appl Phys
Volume 115 Issue 22 Pages 223302-223306
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract Computer simulations based on the particle-in-cell/Monte Carlo collision method are performed to study the plasma characteristics and especially the transition in electron heating mechanisms in a hybrid direct current (dc)/dual-frequency (DF) capacitively coupled CF 4 discharge. When applying a superposed dc voltage, the plasma density first increases, then decreases, and finally increases again, which is in good agreement with experiments. This trend can be explained by the transition between the four main heating modes, i.e., DF coupling, dc and DF coupling, dc source dominant heating, and secondary electron dominant heating.
Address
Corporate Author Thesis
Publisher American Institute of Physics Place of Publication (down) New York, N.Y. Editor
Language Wos 000337891800006 Publication Date 2014-06-11
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0021-8979;1089-7550; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.068 Times cited 9 Open Access
Notes Approved Most recent IF: 2.068; 2014 IF: 2.183
Call Number UA @ lucian @ c:irua:117347 Serial 1414
Permanent link to this record
 
 
Author Bervoets, A.R.J.; Behets, G.J.; Schryvers, D.; Roels, F.; Yang, Z.; Verberckmoes, S.C.; Damment, S.J.P.; Dauwe, S.; Mubiana, V.K.; Blust, R.; de Broe, M.E.; d' Haese, P.C.
Title Hepatocellular transport and gastrointestinal absorption of lanthanum in chronic renal failure Type A1 Journal article
Year 2009 Publication Kidney international Abbreviated Journal Kidney Int
Volume 75 Issue Pages 389-398
Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Pathophysiology
Abstract Lanthanum carbonate is a new phosphate binder that is poorly absorbed from the gastrointestinal tract and eliminated largely by the liver. After oral treatment, we and others had noticed 23 fold higher lanthanum levels in the livers of rats with chronic renal failure compared to rats with normal renal function. Here we studied the kinetics and tissue distribution, absorption, and subcellular localization of lanthanum in the liver using transmission electron microscopy, electron energy loss spectrometry, and X-ray fluoresence. We found that in the liver lanthanum was located in lysosomes and in the biliary canal but not in any other cellular organelles. This suggests that lanthanum is transported and eliminated by the liver via a transcellular, endosomal-lysosomal-biliary canicular transport route. Feeding rats with chronic renal failure orally with lanthanum resulted in a doubling of the liver levels compared to rats with normal renal function, but the serum levels were similar in both animal groups. These levels plateaued after 6 weeks at a concentration below 3 g/g in both groups. When lanthanum was administered intravenously, thereby bypassing the gastrointestinal tract-portal vein pathway, no difference in liver levels was found between rats with and without renal failure. This suggests that there is an increased gastrointestinal permeability or absorption of oral lanthanum in uremia. Lanthanum levels in the brain and heart fluctuated near its detection limit with long-term treatment (20 weeks) having no effect on organ weight, liver enzyme activities, or liver histology. We suggest that the kinetics of lanthanum in the liver are consistent with a transcellular transport pathway, with higher levels in the liver of uremic rats due to higher intestinal absorption.
Address
Corporate Author Thesis
Publisher Place of Publication (down) New York, N.Y. Editor
Language Wos 000263145800009 Publication Date 2008-12-03
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0085-2538;1523-1755; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 8.395 Times cited 29 Open Access
Notes Fwo; Iwt Approved Most recent IF: 8.395; 2009 IF: 6.193
Call Number UA @ lucian @ c:irua:72290 Serial 1417
Permanent link to this record
 
 
Author Dong, H.M.; Xu, W.; Peeters, F.M.
Title High-field transport properties of graphene Type A1 Journal article
Year 2011 Publication Journal of applied physics Abbreviated Journal J Appl Phys
Volume 110 Issue 6 Pages 063704,1-063704,6
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract We present a theoretical investigation on the transport properties of graphene in the presence of high dc driving fields. Considering electron interactions with impurities and acoustic and optical phonons in graphene, we employ the momentum- and energy-balance equations derived from the Boltzmann equation to self-consistently evaluate the drift velocity and temperature of electrons in graphene in the linear and nonlinear response regimes. We find that the current-voltage relation exhibits distinctly nonlinear behavior, especially in the high electric field regime. Under the action of high-fields the large source-drain (sd) current density can be achieved and the current saturation in graphene is incomplete with increasing the sd voltage Vsd up to 3 V. Moreover, for high fields, Vsd>0.1 V, the heating of electrons in graphene occurs. It is shown that the sd current and electron temperature are sensitive to electron density and lattice temperature in the graphene device. This study is relevant to the application of graphene as high-field nano-electronic devices such as graphene field-effect transistors.
Address
Corporate Author Thesis
Publisher American Institute of Physics Place of Publication (down) New York, N.Y. Editor
Language Wos 000295619300059 Publication Date 2011-09-19
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0021-8979; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.068 Times cited 17 Open Access
Notes ; This work was supported by the National Natural Science Foundation of China (Grant No. 10974206) and the Department of Science and Technology of Yunnan Province. ; Approved Most recent IF: 2.068; 2011 IF: 2.168
Call Number UA @ lucian @ c:irua:93614 Serial 1433
Permanent link to this record
 
 
Author Frangis, N.; van Landuyt, J.; Lartiprete, R.; Martelli, S.; Borsella, E.; Chiussi, S.; Castro, J.; Leon, B.
Title High resolution electron microscopy and X-ray photoelectron spectroscopy studies of heteroepitaxial SixGe1-x alloys produced through laser induced processing Type A1 Journal article
Year 1998 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume 72 Issue 22 Pages 2877-2879
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher American Institute of Physics Place of Publication (down) New York, N.Y. Editor
Language Wos 000075273700034 Publication Date 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 16 Open Access
Notes Approved Most recent IF: 3.411; 1998 IF: 3.349
Call Number UA @ lucian @ c:irua:29684 Serial 1447
Permanent link to this record
 
 
Author Van Aert, S.; den Dekker, A.J.; van den Bos, A.; van Dyck, D.
Title High-resolution electron microscopy : from imaging toward measuring Type A1 Journal article
Year 2002 Publication IEEE transactions on instrumentation and measurement Abbreviated Journal Ieee T Instrum Meas
Volume 51 Issue 4 Pages 611-615
Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication (down) New York, N.Y. Editor
Language Wos 000178992000010 Publication Date 2003-01-03
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0018-9456; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.456 Times cited 13 Open Access
Notes Approved Most recent IF: 2.456; 2002 IF: 0.592
Call Number UA @ lucian @ c:irua:47521 Serial 1450
Permanent link to this record
 
 
Author Buschmann, V.; Rodewald, M.; Fuess, H.; Van Tendeloo, G.; Schäffer, C.
Title High resolution electron microscopy study of molecular beam epitaxy grown CoSi2/Si1-xGex/Si(100) heterostructurs Type A1 Journal article
Year 1999 Publication Journal of applied physics Abbreviated Journal J Appl Phys
Volume 85 Issue 4 Pages 2119-2123
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Two CoSi2/Si1-xGex/Si(100) heterostructures, with different Ge content, made by molecular beam epitaxy are characterized by high resolution electron microscopy. In general, the interface between the CoSi2 thin film and the Si1-xGex layer is of a high structural quality and the strained Si1-xGex layer exhibits few defects. For both samples, different interface structures are present, although the dominant interfacial configuration is similar to the unreconstructed interface present at the CoSi2/Si(100) interface. Only occasionally (2x1) reconstructed interface regions are found which are just a few nanometers in length. Phenomena such as Ge segregation and the introduction of defects are also observed in the Si1-xGex layer. We attribute the minimal presence of the reconstructed interface to both the (2x8):Si1-xGex(100) surface reconstruction and the Ge segregation that takes place. (C) 1999 American Institute of Physics. [S0021-8979(99)02104-0].
Address
Corporate Author Thesis
Publisher American Institute of Physics Place of Publication (down) New York, N.Y. Editor
Language Wos 000078403000017 Publication Date 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0021-8979; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.068 Times cited 6 Open Access
Notes Approved Most recent IF: 2.068; 1999 IF: 2.275
Call Number UA @ lucian @ c:irua:103977 Serial 1455
Permanent link to this record
 
 
Author Amin-Ahmadi, B.; Idrissi, H.; Delmelle, R.; Pardoen, T.; Proost, J.; Schryvers, D.
Title High resolution transmission electron microscopy characterization of fcc -> 9R transformation in nanocrystalline palladium films due to hydriding Type A1 Journal article
Year 2013 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume 102 Issue 7 Pages 071911-71914
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Sputtered nanocrystalline palladium thin films with nanoscale growth twins have been subjected to hydriding cycles. The evolution of the twin boundaries has been investigated using high resolution transmission electron microscopy. Surprisingly, the Sigma 3{112} incoherent twin boundaries dissociate after hydriding into two phase boundaries bounding a 9R phase. This phase which corresponds to single stacking faults located every three {111} planes in the fcc Pd structure was not expected because of the high stacking fault energy of Pd. This observation is connected to the influence of the Hydrogen on the stacking fault energy of palladium and the high compressive stresses building up during hydriding. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4793512]
Address
Corporate Author Thesis
Publisher American Institute of Physics Place of Publication (down) New York, N.Y. Editor
Language Wos 000315596700023 Publication Date 2013-02-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 14 Open Access
Notes Iap Approved Most recent IF: 3.411; 2013 IF: 3.515
Call Number UA @ lucian @ c:irua:108303 Serial 1462
Permanent link to this record
 
 
Author Cloetens, P.; Ludwig, W.; Baruchel, J.; van Dyck, D.; van Landuyt, J.; Guigay, J.P.; Schlenker, M.
Title Holotomography: quantitative phase tomography with micrometer resolution using hard synchrotron radiation X-rays Type A1 Journal article
Year 1999 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume 75 Issue 19 Pages 2912-2914
Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Abstract
Address
Corporate Author Thesis
Publisher American Institute of Physics Place of Publication (down) New York, N.Y. Editor
Language Wos 000083483900014 Publication Date 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 481 Open Access
Notes Approved Most recent IF: 3.411; 1999 IF: 4.184
Call Number UA @ lucian @ c:irua:29643 Serial 1484
Permanent link to this record
 
 
Author Reijniers, J.; Peeters, F.M.
Title Hybrid ferromagnetic/semiconductor Hall effect device Type A1 Journal article
Year 1998 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume 73 Issue Pages 357-359
Keywords A1 Journal article; Condensed Matter Theory (CMT); Engineering Management (ENM)
Abstract
Address
Corporate Author Thesis
Publisher American Institute of Physics Place of Publication (down) New York, N.Y. Editor
Language Wos 000075275600027 Publication Date 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 35 Open Access
Notes Approved Most recent IF: 3.411; 1998 IF: 3.349
Call Number UA @ lucian @ c:irua:24171 Serial 1519
Permanent link to this record
 
 
Author Bogaerts, A.; Gijbels, R.
Title Hybrid modeling network for a helium-argon-copper hollow cathode discharge used for laser applications Type A1 Journal article
Year 2002 Publication Journal of applied physics Abbreviated Journal J Appl Phys
Volume 92 Issue 11 Pages 6408-6422
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract
Address
Corporate Author Thesis
Publisher American Institute of Physics Place of Publication (down) New York, N.Y. Editor
Language Wos 000179206600007 Publication Date 2002-11-14
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0021-8979; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.068 Times cited 24 Open Access
Notes Approved Most recent IF: 2.068; 2002 IF: 2.281
Call Number UA @ lucian @ c:irua:40189 Serial 1522
Permanent link to this record
 
 
Author Bogaerts, A.; Gijbels, R.; Goedheer, W.
Title Hybrid Monte Carlo-fluid model of a direct current glow discharge Type A1 Journal article
Year 1995 Publication Journal of applied physics Abbreviated Journal J Appl Phys
Volume 78 Issue Pages 2233-2241
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract
Address
Corporate Author Thesis
Publisher American Institute of Physics Place of Publication (down) New York, N.Y. Editor
Language Wos A1995RP71800009 Publication Date 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0021-8979; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.183 Times cited 117 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:12262 Serial 1526
Permanent link to this record
 
 
Author Amini, M.N.; Saniz, R.; Lamoen, D.; Partoens, B.
Title Hydrogen impurities and native defects in CdO Type A1 Journal article
Year 2011 Publication Journal of applied physics Abbreviated Journal J Appl Phys
Volume 110 Issue 6 Pages 063521,1-063521,7
Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT)
Abstract We have used first-principles calculations based on density functional theory to study point defects in CdO within the local density approximation and beyond (LDA+U). Hydrogen interstitials and oxygen vacancies are found to act as shallow donors and can be interpreted as the cause of conductivity in CdO. Hydrogen can also occupy an oxygen vacancy in its substitutional form and also acts as a shallow donor. Similar to what was found for ZnO and MgO, hydrogen creates a multicenter bond with its six oxygen neighbors in CdO. The charge neutrality level for native defects and hydrogen impurities has been calculated. It is shown that in the case of native defects, it is not uniquely defined. Indeed, this level depends highly on the chemical potentials of the species and one can obtain different values for different end states in the experiment. Therefore, a comparison with experiment can only be made if the chemical potentials of the species in the experiment are well defined. However, for the hydrogen interstitial defect, since this level is independent of the chemical potential of hydrogen, one can obtain a unique value for the charge neutrality level. We find that the Fermi level stabilizes at 0.43 eV above the conduction band minimum in the case of the hydrogen interstitial defect, which is in good agreement with the experimentally reported value of 0.4 eV.
Address
Corporate Author Thesis
Publisher American Institute of Physics Place of Publication (down) New York, N.Y. Editor
Language Wos 000295619300041 Publication Date 2011-09-23
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0021-8979; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.068 Times cited 13 Open Access
Notes ; The authors gratefully acknowledge financial support from the IWT-Vlaanderen through the ISIMADE project, the FWO-Vlaanderen through Project G.0191.08 and the BOF-NOI of the University of Antwerp. This work was carried out using the HPC infrastructure at the University of Antwerp (CalcUA), a division of the Flemish Supercomputer Center VSC. ; Approved Most recent IF: 2.068; 2011 IF: 2.168
Call Number UA @ lucian @ c:irua:93613 Serial 1533
Permanent link to this record
 
 
Author Clima, S.; Wouters, D.J.; Adelmann, C.; Schenk, T.; Schroeder, U.; Jurczak, M.; Pourtois, G.
Title Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2 : a first principles insight Type A1 Journal article
Year 2014 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume 104 Issue 9 Pages 092906
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract The origin of the ferroelectric polarization switching in orthorhombic HfO2 has been investigated by first principles calculations. The phenomenon can be regarded as being the coordinated displacement of four O ions in the orthorhombic unit cell, which can lead to a saturated polarization as high as 53 mu C/cm(2). We show the correlation between the computed polarization reversal barrier and the experimental coercive fields. (C) 2014 AIP Publishing LLC.
Address
Corporate Author Thesis
Publisher American Institute of Physics Place of Publication (down) New York, N.Y. Editor
Language Wos 000332729200078 Publication Date 2014-03-06
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951;1077-3118; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 79 Open Access
Notes Approved Most recent IF: 3.411; 2014 IF: 3.302
Call Number UA @ lucian @ c:irua:116873 Serial 1550
Permanent link to this record
 
 
Author Vandenberghe, W.G.; Sorée, B.; Magnus, W.; Groeseneken, G.; Fischetti, M.V.
Title Impact of field-induced quantum confinement in tunneling field-effect devices Type A1 Journal article
Year 2011 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume 98 Issue 14 Pages 143503,1-143503,3
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract Being the working principle of a tunnel field-effect transistor, band-to-band tunneling is given a rigorous quantum mechanical treatment to incorporate confinement effects, multiple electron and hole valleys, and interactions with phonons. The model reveals that the strong band bending near the gate dielectric, required to create short tunnel paths, results in quantization of the energy bands. Comparison with semiclassical models reveals a big shift in the onset of tunneling. The effective mass difference of the distinct valleys is found to reduce the subthreshold swing steepness.
Address
Corporate Author Thesis
Publisher American Institute of Physics Place of Publication (down) New York, N.Y. Editor
Language Wos 000289297800074 Publication Date 2011-04-06
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 76 Open Access
Notes ; The authors acknowledge Anne Verhulst for useful discussions. William Vandenberghe gratefully acknowledges the support of a Ph.D. stipend from the Institute for the Promotion of Innovation through Science and Technology in Flanders (IWT-Vlaanderen). This work was supported by IMEC's Industrial Affiliation Program. ; Approved Most recent IF: 3.411; 2011 IF: 3.844
Call Number UA @ lucian @ c:irua:89297 Serial 1559
Permanent link to this record
 
 
Author Bultinck, E.; Kolev, I.; Bogaerts, A.; Depla, D.
Title The importance of an external circuit in a particle-in-cell/Monte Carlo collisions model for a direct current planar magnetron Type A1 Journal article
Year 2008 Publication Journal of applied physics Abbreviated Journal J Appl Phys
Volume 103 Issue 1 Pages 013309,1-9
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract
Address
Corporate Author Thesis
Publisher American Institute of Physics Place of Publication (down) New York, N.Y. Editor
Language Wos 000252890700024 Publication Date 2008-01-15
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0021-8979; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.068 Times cited 29 Open Access
Notes Approved Most recent IF: 2.068; 2008 IF: 2.201
Call Number UA @ lucian @ c:irua:66176 Serial 1564
Permanent link to this record
 
 
Author Verreck, D.; Verhulst, A.S.; Sorée, B.; Collaert, N.; Mocuta, A.; Thean, A.; Groeseneken, G.
Title Improved source design for p-type tunnel field-effect transistors : towards truly complementary logic Type A1 Journal article
Year 2014 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume 105 Issue 24 Pages 243506
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract Complementary logic based on tunnel field-effect transistors (TFETs) would drastically reduce power consumption thanks to the TFET's potential to obtain a sub-60 mV/dec subthreshold swing (SS). However, p-type TFETs typically do not meet the performance of n-TFETs for direct bandgap III-V configurations. The p-TFET SS stays well above 60 mV/dec, due to the low density of states in the conduction band. We therefore propose a source configuration in which a highly doped region is maintained only near the tunnel junction. In the remaining part of the source, the hot carriers in the exponential tail of the Fermi-Dirac distribution are blocked by reducing the doping degeneracy, either with a source section with a lower doping concentration or with a heterostructure. We apply this concept to n-p-i-p configurations consisting of In0.53Ga0.47As and an InP-InAs heterostructure. 15-band quantum mechanical simulations predict that the configurations with our source design can obtain sub-60 mV/dec SS, with an on-current comparable to the conventional source design. (C) 2014 AIP Publishing LLC.
Address
Corporate Author Thesis
Publisher American Institute of Physics Place of Publication (down) New York, N.Y. Editor
Language Wos 000346643600076 Publication Date 2014-12-17
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951;1077-3118; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 10 Open Access
Notes ; D. Verreck acknowledges the support of a Ph.D. stipend from the Institute for the Promotion of Innovation through Science and Technology in Flanders (IWT-Vlaanderen). This work was supported by imec's Industrial Affiliation Program. ; Approved Most recent IF: 3.411; 2014 IF: 3.302
Call Number UA @ lucian @ c:irua:122798 Serial 1568
Permanent link to this record
 
 
Author Teodorescu, V.; Nistor, L.; Bender, H.; Steegen, A.; Lauwers, A.; Maex, K.; van Landuyt, J.
Title In situ transmission electron microscopy study of Ni silicide phases formed on (001) Si active lines Type A1 Journal article
Year 2001 Publication Journal of applied physics Abbreviated Journal J Appl Phys
Volume 90 Issue 1 Pages 167-174
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract The formation of Ni silicides is studied by transmission electron microscopy during in situ heating experiments of 12 nm Ni layers on blanket silicon, or in patterned structures covered with a thin chemical oxide. It is shown that the first phase formed is the NiSi2 which grows epitaxially in pyramidal crystals. The formation of NiSi occurs quite abruptly around 400 degreesC when a monosilicide layer covers the disilicide grains and the silicon in between. The NiSi phase remains stable up to 800 degreesC, at which temperature the layer finally fully transforms to NiSi2. The monosilicide grains show different epitaxial relationships with the Si substrate. Ni2Si is never observed. (C) 2001 American Institute of Physics.
Address
Corporate Author Thesis
Publisher American Institute of Physics Place of Publication (down) New York, N.Y. Editor
Language Wos 000169361100023 Publication Date 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0021-8979; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.068 Times cited 97 Open Access
Notes Approved Most recent IF: 2.068; 2001 IF: 2.128
Call Number UA @ lucian @ c:irua:102855 Serial 1587
Permanent link to this record
 
 
Author Ghica, C.; Nistor, L.; Bender, H.; Steegen, A.; Lauwers, A.; Maex, K.; van Landuyt, J.
Title In situ transmission electron microscopy study of the silicidation process in Co thin films on patterned (001) Si substrates Type A1 Journal article
Year 2001 Publication Journal of materials research Abbreviated Journal J Mater Res
Volume 16 Issue 3 Pages 701-708
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract The results of an in situ transmission electron microscopy study of the formation of Co-silicides on patterned (001) Si substrates are discussed. It is shown that the results of the in situ heating experiments agreed very well with the data based on standard rapid thermal annealing experiments. Fast heating rates resulted in better definition of the silicide lines. Also, better lines were obtained for samples that received already a low-temperature ex situ anneal. A Ti cap layer gave rise to a higher degree of epitaxy in the CoSi2 silicide.
Address
Corporate Author Thesis
Publisher Place of Publication (down) New York, N.Y. Editor
Language Wos 000167407200011 Publication Date 2008-03-06
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0884-2914;2044-5326; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.673 Times cited 4 Open Access
Notes Approved Most recent IF: 1.673; 2001 IF: 1.539
Call Number UA @ lucian @ c:irua:103926 Serial 1588
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Author Dobbelaere, W.; de Boeck, J.; Heremans, P.; Mertens, R.; Borghs, G.; Luyten, W.; van Landuyt, J.
Title InAs p-n diodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy Type A1 Journal article
Year 1992 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume 60 Issue Pages 868-870
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher American Institute of Physics Place of Publication (down) New York, N.Y. Editor
Language Wos A1992HD74800027 Publication Date 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.302 Times cited 20 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:4089 Serial 1590
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Author Dobbelaere, W.; de Boeck, J.; Heremans, P.; Mertens, R.; Borghs, G.; Luyten, W.; van Landuyt, J.
Title InAs0.85Sb0.15 infrared photodiodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy Type A1 Journal article
Year 1992 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume 600 Issue 26 Pages 3256-3258
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher American Institute of Physics Place of Publication (down) New York, N.Y. Editor
Language Wos A1992JA80600019 Publication Date 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.302 Times cited 32 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:4102 Serial 1591
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Author Okhrimovskyy, A.; Bogaerts, A.; Gijbels, R.
Title Incorporating the gas flow in a numerical model of rf discharges in methane Type A1 Journal article
Year 2004 Publication Journal of applied physics Abbreviated Journal J Appl Phys
Volume 96 Issue 6 Pages 3070-3076
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract
Address
Corporate Author Thesis
Publisher American Institute of Physics Place of Publication (down) New York, N.Y. Editor
Language Wos 000223720000005 Publication Date 2004-09-02
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0021-8979; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.068 Times cited 11 Open Access
Notes Approved Most recent IF: 2.068; 2004 IF: 2.255
Call Number UA @ lucian @ c:irua:48102 Serial 1596
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Author Kelchtermans, A.; Adriaensens, P.; Slocombe, D.; Kuznetsov, V.L.; Hadermann, J.; Riskin, A.; Elen, K.; Edwards, P.P.; Hardy, A.; Van Bael, M.K.
Title Increasing the solubility limit for tetrahedral aluminium in ZnO:Al nanorods by variation in synthesis parameters Type A1 Journal article
Year 2015 Publication Journal of nanomaterials Abbreviated Journal J Nanomater
Volume 2015 Issue 2015 Pages 1-8
Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract Nanocrystalline ZnO:Al nanoparticles are suitable building blocks for transparent conductive layers. As the concentration of substitutional tetrahedral Al is an important factor for improving conductivity, here we aim to increase the fraction of substitutional Al. To this end, synthesis parameters of a solvothermal reaction yielding ZnO:Al nanorods were varied. A unique set of complementary techniques was combined to reveal the exact position of the aluminium ions in the ZnO lattice and demonstrated its importance in order to evaluate the potential of ZnO:Al nanocrystals as optimal building blocks for solution deposited transparent conductive oxide layers. Both an extension of the solvothermal reaction time and stirring during solvothermal treatment result in a higher total tetrahedral aluminium content in the ZnO lattice. However, only the longer solvothermal treatment effectively results in an increase of the substitutional positions aimed for.
Address
Corporate Author Thesis
Publisher Place of Publication (down) New York, N.Y. Editor
Language Wos 000358516300001 Publication Date 2015-07-12
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1687-4110;1687-4129; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.871 Times cited 2 Open Access
Notes FWO; Methusalem Approved Most recent IF: 1.871; 2015 IF: 1.644
Call Number c:irua:124426 Serial 1600
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Author Scalise, E.; Houssa, M.; Pourtois, G.; Afanas'ev, V.V.; Stesmans, A.
Title Inelastic electron tunneling spectroscopy of HfO2 gate stacks : a study based on first-principles modeling Type A1 Journal article
Year 2011 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume 99 Issue 13 Pages 132101,1-132101,3
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract A first-principles modeling approach is used to investigate the vibrational properties of HfO2. The calculated phonon density of states is compared to experimental results obtained from inelastic electron tunneling spectroscopy (IETS) of various metal-oxide-semiconductor devices with HfO2 gate stacks. This comparison provides deep insights into the nature of the signatures of the complicated IETS spectra and provides valuable structural information about the gate stack, such as the possible presence of oxygen vacancies in jet-vapour deposited HfO2. Important structural differences between the interface of atomic-layer or molecular-beam deposited HfO2 and the Si substrate are also revealed.
Address
Corporate Author Thesis
Publisher American Institute of Physics Place of Publication (down) New York, N.Y. Editor
Language Wos 000295618000036 Publication Date 2011-09-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 1 Open Access
Notes Approved Most recent IF: 3.411; 2011 IF: 3.844
Call Number UA @ lucian @ c:irua:93611 Serial 1606
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Author Martens, T.; Bogaerts, A.; Brok, W.J.M.; van Dijk, J.
Title The influence of impurities on the performance of the dielectric barrier discharge Type A1 Journal article
Year 2010 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume 96 Issue 9 Pages 091501,1-091501,3
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract In this letter, we investigate the effect of various levels of nitrogen impurity on the electrical performance of an atmospheric pressure dielectric barrier discharge in helium. We illustrate the different current profiles that are obtained, which exhibit one or more discharge pulses per half cycle and evaluate their performance in ionizing the discharge and dissipating the power. It is shown that flat and broad current profiles perform the best in ionizing the discharge and use the least amount of power per generated charged particle.
Address
Corporate Author Thesis
Publisher American Institute of Physics Place of Publication (down) New York, N.Y. Editor
Language Wos 000275246200008 Publication Date 2010-03-04
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 28 Open Access
Notes Approved Most recent IF: 3.411; 2010 IF: 3.841
Call Number UA @ lucian @ c:irua:80944 Serial 1624
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Author Rembeza, E.S.; Richard, O.; van Landuyt, J.
Title Influence of laser and isothermal treatments on microstructural properties of SnO2 films Type A1 Journal article
Year 1999 Publication Materials research bulletin Abbreviated Journal Mater Res Bull
Volume 34 Issue 10/11 Pages 1527-1533
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication (down) New York, N.Y. Editor
Language Wos 000084625300006 Publication Date 2002-07-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0025-5408; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.446 Times cited 17 Open Access
Notes Approved Most recent IF: 2.446; 1999 IF: 0.840
Call Number UA @ lucian @ c:irua:29691 Serial 1626
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Author Bogaerts, A.; Naylor, J.; Hatcher, M.; Jones, W.J.; Mason, R.
Title Influence of sticking coefficients on the behavior of sputtered atoms in an argon glow discharge: modeling and comparison with experiment Type A1 Journal article
Year 1998 Publication Journal of vacuum science and technology: A: vacuum surfaces and films Abbreviated Journal J Vac Sci Technol A
Volume 16 Issue 4 Pages 2400-2410
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication (down) New York, N.Y. Editor
Language Wos 000074852700061 Publication Date 2002-07-27
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0734-2101; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.374 Times cited 12 Open Access
Notes Approved Most recent IF: 1.374; 1998 IF: 1.612
Call Number UA @ lucian @ c:irua:24124 Serial 1634
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Author Krstajić, P.; Peeters, F.M.
Title Influence of strain on the tunneling magnetoresistance in diluted magnetic semiconductor trilayer and double barrier structures Type A1 Journal article
Year 2007 Publication Solid state communications Abbreviated Journal Solid State Commun
Volume 141 Issue 6 Pages 320-324
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication (down) New York, N.Y. Editor
Language Wos 000244006000004 Publication Date 2006-11-30
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0038-1098; ISBN Additional Links UA library record; WoS full record
Impact Factor 1.554 Times cited Open Access
Notes Approved Most recent IF: 1.554; 2007 IF: 1.535
Call Number UA @ lucian @ c:irua:63747 Serial 1637
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