|
“Characterisation of the local stress induced by shallow trench isolation and CoSi2 silicidation”. Stuer C, Steegen A, van Landuyt J, Bender H, Maex K, Institute of physics conference series , 481 (2001)
Abstract: With further down-scaling below 0.25mum technologies, CoSi2 is replacing TiSi2 because of its superior formation chemistry on narrow lines and favourable stress behaviour. Shallow trench isolation (STI) is used as the isolation technique in these technologies. In this study, convergent beam electron diffraction (CBED) measurements and finite element modelling (FEM) are performed to evaluate the local stress components in the silicon substrate, induced in STI structures with a 45 nm or a 85 nm CoSi2 silicidation. High compressive stresses in the active area and tensile stress around the trench corners are observed.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
|
|
|
“Clustering of vacancies on {113} planes in Si layers close to Si-Si3N4 interfaces and further aggregation of self-interstitials inside vacancy clusters during electron irradiation”. Fedina L, Gutakovskii A, Aseev A, van Landuyt J, Vanhellemont J, Institute of physics conference series
T2 –, Conference on Microscopy of Semiconducting Materials, MAR 22-25, 1999, UNIV OXFORD, OXFORD, ENGLAND , 495 (1999)
Abstract: In situ HREM irradiation of (110) FZ-Si crystals covered with thin Si3N4 films was carried out in a JEOL-4000EX microscope, operated at 400 keV at room temperature. It is found that clustering of vacancies on (113) planes is realised in a Si layer close to the Si-Si3N4 interface at the initial stage of irradiation. Further aggregation of self-interstitials inside vacancy clusters is considered as an alternative way of point defect recombination in extended shape, to be accomplished with the formation of the extended defects of interstitial type upon interstitial supersaturation.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
|
|
|
“Defect characterization in high temperature implanted 6H-SiC using TEM”. Suvorov AV, Lebedev OI, Suvorova AA, van Landuyt J, Usov IO, Nuclear instruments and methods in physics research: B 127/128, 347 (1997). http://doi.org/10.1016/S0168-583X(96)00954-8
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.109
Times cited: 17
DOI: 10.1016/S0168-583X(96)00954-8
|
|
|
“Direct observation of clusters in some FCC alloys by HREM”. De Meulenaere P, Van Tendeloo G, van Landuyt J, Icem 13, 447 (1994)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
|
|
|
“EFTEM study of plasma etched low-k Si-O-C dielectrics”. Hens S, Bender H, Donaton RA, Maex K, Vanhaelemeersch S, van Landuyt J, Institute of physics conference series
T2 –, Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, UNIV OXFORD, OXFORD, ENGLAND , 415 (2001)
Abstract: Materials with low dielectric constant ("low-k'') in combination with Cu metallization are replacing the oxide based dielectrics with Al metallization in future generations of micro-electronic devices. In this work, a carbon doped oxide low-k dielectric material is studied after different kinds of etch/strip steps in single damascene Cu. filled line structures. Interline capacitance measurements indicate a dependence of the dielectric constant on the strip conditions. EFTEM is used to study the composition of the dielectric material and the modification of the low-k material at the sidewall of the etched structures for the various treatment conditions.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
|
|
|
“Electron diffraction evidence for ordering of interstitial silver ions in silver bromide microcrystals”. Goessens C, Schryvers D, van Dyck D, van Landuyt J, de Keyzer R, Icem 13 (1994)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
|
|
|
“Electron microscopy study of twin sequences and branching in Ni66Al34 3r martensite”. Schryvers D, van Landuyt JT, Proceedings Of The International Conference On Martensitic Transformations (icomat-92) , 263 (1993)
Keywords: P1 Proceeding; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Times cited: 1
|
|
|
“EM study of sensitisation of silver halide grains”. Buschmann V, Schryvers D, van Landuyt J, van Roost C, Icem 13 (1994)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
|
|
|
“Formation of diamond nanocrystals in laser-irradiated amorphous carbon films”. Nistor LC, van Landuyt J, Ralchenko VG, Kononenko TV, Obraztsova ED, Strelnitsky VE, International Conference on the New Diamond Science and Technology 4, 25 (1994)
Keywords: P3 Proceeding; Electron microscopy for materials research (EMAT)
|
|
|
“High resolution electron microscopy and electron spin resonance studies on cubic boron nitride crystals made by high-pressure/high-temperature synthesis”. Nistor L, Nistor SV, Dincã, G, van Landuyt J, Schoemaker D, Copaciu V, Georgeoni P, Arnici N, Diamonds an related materials 8, 738 (1999). http://doi.org/10.1016/S0925-9635(98)00282-9
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.561
Times cited: 7
DOI: 10.1016/S0925-9635(98)00282-9
|
|
|
“HREM imaging analysis in the study of pretransition and nucleation phenomena in alloys”. Schryvers D, Van Tendeloo G, van Landuyt J, Tanner LE, Icem 13, 659 (1994)
Keywords: A3 Journal article; Electron microscopy for materials research (EMAT)
|
|
|
“HREM study of Rb6C60 and helical carbon nanotubules”. Bernaerts D, Zhang XB, Zhang XF, Van Tendeloo G, van Landuyt J, Amelinckx S, Icem 13, 305 (1994)
Keywords: A3 Journal article; Electron microscopy for materials research (EMAT)
|
|
|
“In situ HREM irradiation study of point-defect clustering in MBE-grown strained Si1-xGex/(001)Si structures”. Fedina L, Lebedev OI, Van Tendeloo G, van Landuyt J, Mironov OA, Parker EHC, Physical review : B : condensed matter and materials physics 61, 10336 (2000). http://doi.org/10.1103/PhysRevB.61.10336
Abstract: We present a detailed analysis of the point-defect clustering in strained Si/Si(1-x)Ge(x)/(001)Si structures, including the interaction of the point defects with the strained interfaces and the sample surface during 400 kV electron irradiation at room temperature. Point-defect cluster formation is very sensitive to the type and magnitude of the strain in the Si and Si(1-x)Ge(x) layers. A small compressive strain (-0.3%) in the SiGe alloy causes an aggregation of vacancies in the form of metastable [110]-oriented chains. They are located on {113} planes and further recombine with interstitials. Tensile strain in the Si layer causes an aggregation of interstitial atoms in the forms of additional [110] rows which are inserted on {113} planes with [001]-split configurations. The chainlike configurations are characterized by a large outward lattice relaxation for interstitial rows (0.13 +/-0.01 nm) and a very small inward relaxation for vacancy chains (0.02+/-0.01 nm). A compressive strain higher than -0.5% strongly decreases point-defect generation inside the strained SiGe alloy due to the large positive value of the formation volume of a Frenkel pair. This leads to the suppression of point-defect clustering in a strained SiGe alloy so that SiGe relaxes via a diffusion of vacancies from the Si layer, giving rise to an intermixing at the Si/SiGe interface. In material with a 0.9% misfit a strongly increased flow of vacancies from the Si layer to the SiGe layer and an increased biaxial strain in SiGe bath promote the preferential aggregation of vacancies in the (001) plane, which relaxes to form intrinsic 60 degrees dislocation loops.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 27
DOI: 10.1103/PhysRevB.61.10336
|
|
|
“Laser thermotreatment of the SnO2layers”. Rembeza SI, Loginov VA, Svistova TV, Podkopaeva OI, Rembeza ES, van Landuyt J, Eurosensors XII, vols 1 and 2 , 481 (1998)
Abstract: The optical and electrical properties and pi ase composition of magnetron sputtered antimony-doped SnOx thin films are investigated before and after laser thermotreatment The temperature dependencies on mobility and concentration of free charges are measured by Van der Pauw method. The gas sensitivity of SnOx has been measured before and after laser thermotreatment.
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
|
|
|
“Ordering and defects in BanTaxTiyO3n ternary oxides”. Nistor L, Van Tendeloo G, Amelinckx S, Shpanchenko RV, van Landuyt J, Electron Microscopy 1994, Vols 2a And 2b: Applications In Materials Sciences , 869 (1994)
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
|
|
|
“Phase transitions in C60 and the related microstructure: a study by electron diffraction and electron microscopy”. Van Tendeloo G, van Heurck C, van Landuyt J, Amelinckx S, Verheijen MA, van Loosdrecht PHM, Meijer G, Journal of physical chemistry 96, 7424 (1992). http://doi.org/10.1021/j100197a054
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 33
DOI: 10.1021/j100197a054
|
|
|
“Point defect reactions in silicon studies in situ by high flux electron irradiation in high voltage transmission electron microscope”. Vanhellemont J, Romano-Rodriguez A, Fedina L, van Landuyt J, Aseev A, Materials science and technology 11, 1194 (1995)
Keywords: A3 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 7
|
|
|
“Electron microscopy study of twin sequences and branching in NissAl34 3R martensite”. Schryvers D, Van Landuyt J, ICOMAT (1992)
Abstract: Microtwin sequences in Ni66Al34 martensite plates of different size were investigated by electron microscopy. Although mostly irregular sequences were observed an average twin width w can be determined which increases with twin length L following the expected relation w ~ sqrt(L). High resolution electron microscopy was used to study the twin branching close to the plate boundaries and an atomic model for the branching of a microtwin and the changes in twin thickness is suggested
Keywords: A3 Journal Article; Electron Microscopy for Materials Science (EMAT) ;
|
|
|
“A 2a2b3c superstructure in hexagonal NiS1-x: a study by means of electron diffraction and HREM”. Lioutas CB, Manolikas C, Van Tendeloo G, van Landuyt J, Journal of crystal growth 126, 457 (1993)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.698
Times cited: 4
|
|
|
“A 2a2a3c superstructure in hexagonal Ni1-xS : a study by means of electron-diffraction and HRTEM”. Lioutas CB, Manolikas C, Van Tendeloo G, van Landuyt J, Journal of crystal growth 126, 457 (1993). http://doi.org/10.1016/0022-0248(93)90051-W
Abstract: The high temperature phase of Ni1-xS has the NiAs-type structure. The coexistence of two superstructures, ''3a3a3c'' and ''2a2a3c'' with the basic phase is confirmed by means of electron diffraction. The 2a2a3c superstructure is studied by means of electron diffraction and high resolution electron microscopy. A structure model is proposed based on the periodic insertion of stacking faults in the NiAs-type basic structure and the ordering of vacancies in alternate metal-atom layers. Microtwinning in very narrow slabs is found to be a main feature of the 2a2a3c regions and two defect models are discussed.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.698
Times cited: 4
DOI: 10.1016/0022-0248(93)90051-W
|
|
|
“A novel approach to analyse FTIR spectra of precipitates in boron-doped silicon”. de Gryse O, Vanhellemont J, Clauws P, Lebedev O, van Landuyt J, Simoen E, Claeys C, Physica: B : condensed matter
T2 –, 22nd International Conference on Defects in Semiconductors (ICDS-22), JUL 28-AUG 01, 2003, UNIV AARHUS, AARHUS, DENMARK 340, 1013 (2003). http://doi.org/10.1016/j.physb.2003.09.194
Abstract: Infrared absorption spectra of composite precipitates are analysed with a modified Day-Thorpe algorithm, assuming a precipitated phase consisting of a mixture of two components with known optical properties. Additional constraints are introduced when solving the model equations by using a priori knowledge making the algorithm more reliable. It is shown that this novel approach allows determining both morphology and composition of precipitates. The method is applied to characterise oxide precipitates in boron-doped silicon. The results indicate that for the resistivity range above 60 mOmegacm, the precipitated phase is most probably SiO1.17+/-0.14, while for resistivities below 20 mOmega cm, precipitates consist of a SiO2/B2O3 composite with a large volume fraction of B(2)0(3) (up to 40% for 8 mOmegacm material). (C) 2003 Elsevier B.V. All rights reserved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.386
Times cited: 4
DOI: 10.1016/j.physb.2003.09.194
|
|
|
“Accurate infrared absorption measurement of interstitial and precipitated oxygen in p+ silicon wafers”. De Gryse O, Clauws P, Rossou L, van Landuyt J, Vanhellemont J, Microelectronic engineering 45, 277 (1999). http://doi.org/10.1016/S0167-9317(99)00180-X
Abstract: A novel infrared absorption method has been developed to measure [he interstitial oxygen concentration in highly doped silicon. Thin samples of the order of 10-30 mu m are prepared in an essentially stress-free state without changing the state of the crystal. The oxygen concentration is then determined by measuring the height of the 1136-cm(-1) absorption peak due to interstitial oxygen at 5.5 K. The obtained results on as-grown samples are compared with those from gas fusion analysis. The precipitated oxygen concentration in annealed samples is also determined with the new method. It will be shown that the interstitial oxygen concentration in highly doped silicon can be determined with high accuracy and down to concentrations of 10(17) cm(-3). (C) 1999 Elsevier Science B.V. All rights reserved.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 1.806
DOI: 10.1016/S0167-9317(99)00180-X
|
|
|
“Carbon nano-tubes: their formation process and observation by electron microscopy”. Zhang XF, Zhang XB, Van Tendeloo G, Amelinckx S, op de Beeck M, van Landuyt J, Journal of crystal growth 130, 368 (1993). http://doi.org/10.1016/0022-0248(93)90522-X
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.698
Times cited: 190
DOI: 10.1016/0022-0248(93)90522-X
|
|
|
“Characterization of crystal defects in mixed tabular silver halide grains by conventional transmission electron microscopy and X-ray diffractometry”. Goessens C, Schryvers D, van Landuyt J, Amelinckx S, Verbeeck A, de Keyzer R, Journal of crystal growth 110, 930 (1991)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.698
Times cited: 40
|
|
|
“Characterization of LPE grown InGaAsP/InP heterostructures: IR-LED at 1.66 μm used for the remote monitoring of methane gas”. Volkov VV, van Landuyt J, Marushkin KM, Gijbels R, Férauge C, Vasilyev MG, Shelyakin AA, Sokolovsky AA, Journal of crystal growth 173, 285 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.751
Times cited: 4
|
|
|
“Chemical and structural characterization of oxygen precipitates in silicon by infrared spectroscopy and TEM”. de Gryse O, Clauws P, Lebedev O, van Landuyt J, Vanhellemont J, Claeys C, Simoen E, Physica: B : condensed matter
T2 –, 21st International Conference on Defects in Semiconductors, JUL 16-20, 2001, GIESSEN, GERMANY 308, 294 (2001). http://doi.org/10.1016/S0921-4526(01)00801-8
Abstract: Infrared absorption spectra of polyhedral and platelet oxygen precipitates are analyzed using a modified Day-Thorpe approach (J. Phys.: Condens. Matter 11 (1999) 2551). The aspect ratio has been determined by TEM measurements. The reduced spectral function and the stoichiometry are extracted from the absorption spectra and the concentration of precipitated interstitial oxygen. One set of spectra reveal a Frohlich frequency around 1100 cm(-1) and another around 1110-1120 cm(-1). It is shown that the shift in the Frohlich frequency is not due to a different stoichiometry, but due to the detailed structure in the reduced spectral function. The oxygen precipitates consist of SiO. with gammaapproximate to1.1-1.2+/-0.1. (C) 2001 Elsevier Science B.V. All rights reserved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.386
Times cited: 3
DOI: 10.1016/S0921-4526(01)00801-8
|
|
|
“Colloid size distributions in ion implanted glass”. Nistor LC, van Landuyt J, Barton JD, Hole DE, Skelland ND, Townsend PD, Journal of non-crystalline solids 162, 217 (1993). http://doi.org/10.1016/0022-3093(93)91240-4
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.766
Times cited: 63
DOI: 10.1016/0022-3093(93)91240-4
|
|
|
“Computational comparisons between the conventional multislice method and the third-order multislice method for calculating high-energy electron diffraction and imaging”. Chen JH, van Dyck D, op de Beeck M, van Landuyt J, Ultramicroscopy 69, 219 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 2.843
Times cited: 11
|
|
|
“Conical, helically woud, graphite whiskers: a limliting member of the “fullerenes”?”.Amelinckx S, Luyten W, Krekels T, Van Tendeloo G, van Landuyt J, Journal of crystal growth 121, 543 (1992). http://doi.org/10.1016/0022-0248(92)90561-V
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.698
Times cited: 43
DOI: 10.1016/0022-0248(92)90561-V
|
|
|
“Defects and growth mechanisms of AgCl(100) tabular crystals”. van Renterghem W, Goessens C, Schryvers D, van Landuyt J, Verrept P, Bollen D, van Roost C, de Keyzer R, Journal of crystal growth 187, 410 (1998). http://doi.org/10.1016/S0022-0248(98)00004-9
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.751
Times cited: 8
DOI: 10.1016/S0022-0248(98)00004-9
|
|