“Kinetic modeling of relaxation phenomena after photodetachment in a rf electronegative SiH4 discharge”. Yan M, Bogaerts A, Gijbels R, Physical review : E : statistical physics, plasmas, fluids, and related interdisciplinary topics 63 (2001). http://doi.org/10.1103/PhysRevE.63.026405
Abstract: The global relaxation process after pulsed laser induced photodetachment in a rf electronegative SIH4 discharge is studied by a self-consistent kinetic one-dimensional particle-in-cell-Monte Carlo model. Our results reveal a comprehensive physical picture of the relaxation process, including the main plasma variables, after a perturbation up to the full recovery of the steady state. A strong influence of the photodetachment on the discharge is found, which results from an increase of the electron density, leading to a weaker bulk field, and hence to a drop in the high energy tail of the electron energy distribution function (EEDF), a reduction of the reaction rates of electron impact attachment and ionization, and a subsequent decrease of the positive and negative ion densities. All the plasma quantities related to electrons recover synchronously. The recovery time of the ion densities is about 1-2 orders of magnitude longer than that of the electrons due to different recovery mechanisms. The modeled behavior of all the charged particles agrees very well with experimental results from the literature. In addition, our work clarifies some unclear processes assumed in the literature, such as the relaxation of the EEDF, the evolution of the electric field, and the recovery of negative ions.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.366
Times cited: 4
DOI: 10.1103/PhysRevE.63.026405
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“Structure determination of spherical MCM-41 particles”. Pauwels B, Van Tendeloo G, Thoelen C, van Rhijn W, Jacobs PA, Advanced materials 13, 1317 (2001). http://doi.org/10.1002/1521-4095(200109)13:17<1317::AID-ADMA1317>3.0.CO;2-5
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 19.791
Times cited: 91
DOI: 10.1002/1521-4095(200109)13:17<1317::AID-ADMA1317>3.0.CO;2-5
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“Influence of twinning on the morphology of AgBr and AgCl microcrystals”. van Renterghem W, Goessens C, Schryvers D, van Landuyt J, Bollen D, de Keyzer R, van Roost C, The journal of imaging science and technology 45, 349 (2001)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.348
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“A TEM study of non-parallel twins inducing thickness growth in silver chloride {111} tabular crystals”. van Renterghem W, Schryvers D, van Landuyt J, Bollen D, van Roost C, de Keyzer R, The journal of imaging science and technology 45, 83 (2001)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.348
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“Atomic scale characterization of supported and assembled nanoparticles”. Pauwels B, Yandouzi M, Schryvers D, Van Tendeloo G, Verschoren G, Lievens P, Hou M, van Swygenhoven H, , B8.3 (2001)
Keywords: P3 Proceeding; Electron microscopy for materials research (EMAT)
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“Atomic scale modeling of supported and assembled nanoparticles”. Zhurkin E, Hou M, van Swygenhoven H, Pauwels B, Yandouzi M, Schryvers D, Van Tendeloo G, Lievens P, Verschoren G, Kuriplach J, van Peteghem S, Segers D, Dauwe C, , B8.2 (2001)
Keywords: P3 Proceeding; Electron microscopy for materials research (EMAT)
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“Catalyst traces after chemical purification in CVD grown carbon nanotubes”. Biró, LP, Khanh NQ, Horváth ZE, Vértesy Z, Kocsonya A, Konya Z, Osváth Z, Koós A, Guylai J, Zhang XB, Van Tendeloo G, Fonseca A, Nagy JB, , 183 (2001)
Keywords: P3 Proceeding; Electron microscopy for materials research (EMAT)
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“Interactions between DC plasma and HF fields”. Cenian A, Chernukho A, Leys C, Bogaerts A, , 389 (2001)
Keywords: P3 Proceeding; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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“Large scale synthesis of carbon nanotubes and their composite materials”. Nagy JB, Fonseca A, Pierard N, Willems I, Bister G, Pirlot C, Demortier A, Delhalle J, Mekhalif Z, Niesz K, Bossuot C, Pirard J-P, Biró, LP, Konya Z, Colomer J-F, Van Tendeloo G, Kiricsi I, (2001)
Keywords: P3 Proceeding; Electron microscopy for materials research (EMAT)
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“Theory of crystal structures of polymerized C60-fullerite and fullerides AC60, A=K, Rb, Cs”. Michel KH, Nikolaev AV, Verberck B s.l. (2001).
Keywords: H1 Book chapter; Condensed Matter Theory (CMT)
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“Stress analysis with convergent beam electron diffraction around NMOS transistors”. Stuer G, Bender H, van Landuyt J, Eyben P, , 359 (2001)
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT); Internet Data Lab (IDLab)
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“Quantitative EFTEM study of germanium quantum dots”. Hens S, Stuer C, Bender H, Loo R, van Landuyt J, , 345 (2001)
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
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“Magnetic field induced spin and isospin blockade in two vertically coupled quantum dots”. Partoens B, Peeters FM, Europhysics letters 56, 86 (2001). http://doi.org/10.1209/epl/i2001-00491-5
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.957
Times cited: 25
DOI: 10.1209/epl/i2001-00491-5
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“Chemical and structural analysis of etching residue layers in semiconductor devices with energy filtering transmission electron microscopy”. Hens S, van Landuyt J, Bender H, Boullart W, Vanhaelemeersch S, Materials science in semiconductor processing 4, 109 (2001). http://doi.org/10.1016/S1369-8001(00)00147-5
Abstract: The use of an energy-filtering held emission gun transmission electron microscope (CM30 FEG Ultratwin) allows, apart from imaging morphologies down to nanometer scale, the fast acquisition of high-resolution element distributions. Electrons that have lost energy corresponding to characteristic inner-shell loss edges are used to form the element maps. The production of Ultra Large-Scale Integration (ULSI) devices with dimensions below 0.25 mum requires among others the formation of a multilayer metallization scheme by means of repeatedly applying the deposition and etching of dielectrics and metals. In this work the evolution of the surface chemical species on etched Al lines in a post-etch cleaning process has been investigated by energy filtering transmission electron microscopy, with the aim to understand the role of each process step on the removal of the etching residues. (C) 2001 Elsevier Science Ltd. All rights reserved.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 2.359
DOI: 10.1016/S1369-8001(00)00147-5
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“Comparison of modeling calculations with experimental results for direct current glow discharge optical emission spectrometry”. Bogaerts A, Wilken L, Hoffmann V, Gijbels R, Wetzig K, Spectrochimica acta: part B : atomic spectroscopy 56, 551 (2001). http://doi.org/10.1016/S0584-8547(01)00220-8
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 3.241
Times cited: 16
DOI: 10.1016/S0584-8547(01)00220-8
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“GP-zones in Al-Zn-Mg alloys and their role in artificial aging”. Berg LK, Gjønnes J, Hansen V, Li XZ, Knutson-Wedel M, Waterloo G, Schryvers D, Wallenberg LR, Acta materialia 49, 3443 (2001). http://doi.org/10.1016/S1359-6454(01)00251-8
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 5.301
Times cited: 261
DOI: 10.1016/S1359-6454(01)00251-8
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“On the crystal structure of TiNi-Cu martensite”. Potapov P, Shelyakov A, Schryvers D, Scripta materialia 44, 1 (2001). http://doi.org/10.1016/S1359-6462(00)00555-8
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.747
Times cited: 36
DOI: 10.1016/S1359-6462(00)00555-8
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“The use of convergent beam electron diffraction for stress measurements in shallow trench isolation structures”. Stuer C, van Landuyt J, Bender H, Rooyackers R, Badenes G, Materials science in semiconductor processing 4, 117 (2001). http://doi.org/10.1016/S1369-8001(00)00110-4
Abstract: Shallow trench isolation (STI) is a promising technology for the isolation structures of the new generation of ULSI devices with dimensions below 0.18 mum. The various processing steps cause stress fields in STI structures, which can lead to defect formation in the silicon substrate. In their turn, stress fields affect the electrical parameters and the reliability of devices. Convergent beam electron diffraction (CBED) is used in this study to examine the influence of a wet and a dry pre-gate oxidation on the stress distribution around STI structures. The measurements are performed on STI structures with different width and spacing. CBED analysis is compared with bright-field TEM images. Defects are observed in high-strain areas of small isolated structures. (C) 2001 Elsevier Science Ltd. All rights reserved.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 2.359
Times cited: 6
DOI: 10.1016/S1369-8001(00)00110-4
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“1D fluid model for an rf methane plasma of interest in deposition of diamond-like carbon layers”. Herrebout D, Bogaerts A, Yan M, Goedheer W, Dekempeneer E, Gijbels R, Journal of applied physics 90, 570 (2001). http://doi.org/10.1063/1.1378059
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.068
Times cited: 83
DOI: 10.1063/1.1378059
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“Electron energy-loss spectroscopy study of a (LaMnO3)8(SrMnO3)4 heterostructure”. Verbeeck J, Lebedev OI, Van Tendeloo G, Silcox J, Mercey B, Hervieu M, Haghiri-Gosnet AM, Applied physics letters 79, 2037 (2001). http://doi.org/10.1063/1.1403316
Abstract: An epitaxially grown heterostructure consisting of alternating layers of LaMnO3 (8 unit cells) and SrMnO3 (4 unit cells) on a SrTiO3 substrate has been studied by a combination of electron energy-loss spectroscopy (EELS) and high-resolution transmission electron microscopy (HRTEM) on an atomic scale. Excitation edges of all elements are captured with subnanometer spatial accuracy, and parametrized to obtain chemical profiles. The fine-edge structure of O K and Mn L-2,L-3 edges are interpreted as signatures of the local electronic structure and show a spatial modulation of the concentration of holes with O 2p character. The chemical concentration is found to be different for the bottom and top interface of a SrMnO3 layer. HRTEM complements the EELS results and confirms the asymmetry of the interfaces. (C) 2001 American Institute of Physics.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 19
DOI: 10.1063/1.1403316
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“Electronic structure and electric quadrupoles of a polymerized chain in solid AC60”. Nikolaev AV, Michel KH, Solid state communications 117, 739 (2001). http://doi.org/10.1016/S0038-1098(01)00017-5
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.554
Times cited: 10
DOI: 10.1016/S0038-1098(01)00017-5
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“In situ transmission electron microscopy study of Ni silicide phases formed on (001) Si active lines”. Teodorescu V, Nistor L, Bender H, Steegen A, Lauwers A, Maex K, van Landuyt J, Journal of applied physics 90, 167 (2001). http://doi.org/10.1063/1.1378812
Abstract: The formation of Ni silicides is studied by transmission electron microscopy during in situ heating experiments of 12 nm Ni layers on blanket silicon, or in patterned structures covered with a thin chemical oxide. It is shown that the first phase formed is the NiSi2 which grows epitaxially in pyramidal crystals. The formation of NiSi occurs quite abruptly around 400 degreesC when a monosilicide layer covers the disilicide grains and the silicon in between. The NiSi phase remains stable up to 800 degreesC, at which temperature the layer finally fully transforms to NiSi2. The monosilicide grains show different epitaxial relationships with the Si substrate. Ni2Si is never observed. (C) 2001 American Institute of Physics.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.068
Times cited: 97
DOI: 10.1063/1.1378812
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“In situ transmission electron microscopy study of the silicidation process in Co thin films on patterned (001) Si substrates”. Ghica C, Nistor L, Bender H, Steegen A, Lauwers A, Maex K, van Landuyt J, Journal of materials research 16, 701 (2001). http://doi.org/10.1557/JMR.2001.0121
Abstract: The results of an in situ transmission electron microscopy study of the formation of Co-silicides on patterned (001) Si substrates are discussed. It is shown that the results of the in situ heating experiments agreed very well with the data based on standard rapid thermal annealing experiments. Fast heating rates resulted in better definition of the silicide lines. Also, better lines were obtained for samples that received already a low-temperature ex situ anneal. A Ti cap layer gave rise to a higher degree of epitaxy in the CoSi2 silicide.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.673
Times cited: 4
DOI: 10.1557/JMR.2001.0121
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“Influence of the morphology on the magneto-transport properties of laser-ablated ultrathin La0.7Ba0.3MnO3 films”. Das A, Gordon I, Wagner P, Cannaerts M, Moshchalkov VV, Bruynseraede Y, Schuddinck W, Van Tendeloo G, Borghs G, Journal of applied physics 90, 1429 (2001). http://doi.org/10.1063/1.1380217
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.068
Times cited: 2
DOI: 10.1063/1.1380217
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“Investigation by convergent beam electron diffraction of the stress around shallow trench isolation structures”. Stuer C, van Landuyt J, Bender H, de Wolf I, Rooyackers R, Badenes G, Journal of the electrochemical society 148, G597 (2001). http://doi.org/10.1149/1.1404970
Abstract: Convergent beam electron diffraction (CBED) is used in this study to investigate the stress distribution around shallow trench isolation (STI) structures. Attention is given to the influence of the different processing parameters and the width and spacing of the structures. The use of a wet or a dry pregate oxidation is found to have a strong influence on the stress behavior. Isolated lines show more stress, leading to the formation of defects in the silicon substrate if a wet pregate oxidation is used. The CBED analyses are compared with micro-Raman and bright-field transmission electron microscopy measurements. (C) 2001 The Electrochemical Society.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.259
Times cited: 13
DOI: 10.1149/1.1404970
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“Modeling of bombardment induced oxidation of silicon”. de Witte H, Vandervorst W, Gijbels R, Journal of applied physics 89, 3001 (2001). http://doi.org/10.1063/1.1344581
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.068
Times cited: 16
DOI: 10.1063/1.1344581
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“Reply to Rinn and Maass”. Schweigert IV, Schweigert VA, Peeters FM, Physical review letters 86, 4712 (2001). http://doi.org/10.1103/PhysRevLett.86.4712
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 8.462
Times cited: 5
DOI: 10.1103/PhysRevLett.86.4712
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“Spin filtering in a magnetic-potential barrier structures”. Papp G, Peeters FM, Applied physics letters 78, 2184 (2001). http://doi.org/10.1063/1.1360224
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 234
DOI: 10.1063/1.1360224
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“Spin filtering in a magnetic-potential barrier structures: erratum”. Papp G, Peeters FM, Applied physics letters 79, 3198 (2001). http://doi.org/10.1063/1.1415371
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 104
DOI: 10.1063/1.1415371
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“Spin-polarized tunneling through diluted magnetic semiconductor barriers”. Chang K, Peeters FM, Solid state communications 120, 181 (2001). http://doi.org/10.1016/S0038-1098(01)00370-2
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.554
Times cited: 35
DOI: 10.1016/S0038-1098(01)00370-2
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