“Temperature-dependent modeling and characterization of through-silicon via capacitance”. Katti G, Stucchi M, Velenis D, Sorée B, de Meyer K, Dehaene W, IEEE electron device letters 32, 563 (2011). http://doi.org/10.1109/LED.2011.2109052
Abstract: A semianalytical model of the through-silicon via (TSV) capacitance for elevated operating temperatures is derived and verified with electrical measurements. The effect of temperature on the increase in TSV capacitance over different technology parameters is explored, and it is shown that higher oxide thickness reduces the impact of temperature rise on TSV capacitance, while with low doped substrates, which are instrumental for reducing the TSV capacitance, the sensitivity of TSV capacitance to temperature is large and cannot be ignored.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.048
Times cited: 27
DOI: 10.1109/LED.2011.2109052
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“Titanium (germano-)silicides featuring 10-9 Ω.cm2 contact resistivity and improved compatibility to advanced CMOS technology”. Yu H, Schaekers M, Chew SA, Eyeraert J-L, Dabral A, Pourtois G, Horiguchi N, Mocuta D, Collaert N, De Meyer K, 2018 18th International Workshop On Junction Technology (iwjt) , 80 (2018)
Abstract: uIn this work, we discuss three novel Ti (germano-)silicidation techniques featuring respectively the pre-contact amorphization implantation (PCAI), the TiSi co-deposition, and Ti atomic layer deposition (ALD). All three techniques form TiSix(Ge-y) contacts with ultralow contact resistivity (rho(c)) of (1-3)x10(-9) Omega.cm(2) on both highly doped n-Si and p-SiGe substrates: these techniques meet rho(c) requirement of 5-14 nm CMOS technology and feature unified CMOS contact solutions. We further discuss the compatibility of these techniques to the realistic CMOS transistor fabrication.
Keywords: P1 Proceeding; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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“Barrier permeation effects on the inversion layer subband structure and its applications to the electron mobility”. Lujan GS, Magnus W, Sorée B, Ragnarsson LA, Trojman L, Kubicek S, De Gendt S, Heyns A, De Meyer K, Microelectronic engineering 80, 82 (2005). http://doi.org/10.1016/j.mee.2005.04.047
Abstract: The electron wave functions in the inversion layer are analyzed in the case where the dielectric barriers are not infinite. This forces the electron concentration closer to the interface silicon/oxide and reduces the subband energy. This treatment of the inversion layer is extended to the calculation of the electron mobility degradation due to remote Coulomb scattering on a high-k dielectric stacked transistor. The subband energy reduction leads to a decrease of the scattering charge needed to explain the experimental results. This model can also fit better the experimental data when compared with the case where no barrier permeation is considered.
Keywords: A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Impact Factor: 1.806
Times cited: 1
DOI: 10.1016/j.mee.2005.04.047
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“Moore's law: new playground for quantum physics”. van Rossum M, Schoenmaker W, Magnus W, de Meyer K, Croitoru MD, Gladilin VN, Fomin VM, Devreese JT, Physica status solidi: B: basic research 237, 426 (2003). http://doi.org/10.1002/pssb.200301788
Keywords: A1 Journal article; Theory of quantum systems and complex systems; Condensed Matter Theory (CMT); Electron microscopy for materials research (EMAT)
Impact Factor: 1.674
Times cited: 2
DOI: 10.1002/pssb.200301788
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“Tunneling-lifetime model for metal-oxide-semiconductor structures”. Pourghaderi MA, Magnus W, Sorée B, Meuris M, de Meyer K, Heyns M, Physical review : B : solid state 80, 085315 (2009). http://doi.org/10.1103/PhysRevB.80.085315
Abstract: In this paper we investigate the basic physics of charge carriers (electrons) leaking out of the inversion layer of a metal-oxide-semiconductor capacitor with a biased gate. In particular, we treat the gate leakage current as resulting from two combined processes: (1) the time-dependent decay of electron wave packets representing the inversion-layer charge and (2) the local generation of new electrons replacing those that have leaked away. As a result, the gate current simply emerges as the ratio of the total charge in the inversion layer to the tunneling lifetime. The latter is extracted from the quantum dynamics of the decaying wave packets, while the generation rate is incorporated as a phenomenological source term in the continuity equation. Not only do the gate currents calculated with this model agree very well with experiment, the model also provides an onset to solve the paradox of the current-free bound states representing the resonances of the Schrödinger equation that governs the fully coupled metal-oxide-semiconductor system.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 2
DOI: 10.1103/PhysRevB.80.085315
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“Perspective of tunnel-FET for future low-power technology nodes”. Verhulst AS, Verreck D, Smets Q, Kao K-H, Van de Put M, Rooyackers R, Sorée B, Vandooren A, De Meyer K, Groeseneken G, Heyns MM, Mocuta A, Collaert N, Thean AV-Y, 2014 Ieee International Electron Devices Meeting (iedm) (2014)
Keywords: P1 Proceeding; Condensed Matter Theory (CMT)
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“Ballistic current in metal-oxide-semiconductor field-effect transistors: the role of device topology”. Pourghaderi MA, Magnus W, Sorée B, Meuris M, de Meyer K, Heyns M, Journal of applied physics 106, 053702 (2009). http://doi.org/10.1063/1.3197635
Abstract: In this study we investigate the effect of device topology on the ballistic current in n-channel metal-oxide-semiconductor field-effect transistors. Comparison of the nanoscale planar and double-gate devices reveals that, down to a certain thickness of the double gate film, the ballistic current flowing in the double gate device is twice as large compared to its planar counterpart. On the other hand, further thinning of the film beyond this threshold is found to change noticeably the confinement and transport characteristics, which are strongly depending on the film material and the surface orientation. For double gate Ge and Si devices there exists a critical film thickness below which the transverse gate field is no longer effectively screened by the inversion layer electron gas and mutual inversion of the two gates is turned on. In the case of GaAs and other similar IIIV compounds, a decrease in the film thickness may drastically change the occupation of the L-valleys and therefore amend the transport properties. The simulation results show that, in both cases, the ballistic current and the transconductance are considerably enhanced.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.068
Times cited: 3
DOI: 10.1063/1.3197635
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“Direct and indirect band-to-band tunneling in germanium-based TFETs”. Kao K-H, Verhulst AS, Vandenberghe WG, Sorée B, Groeseneken G, De Meyer K, IEEE transactions on electron devices 59, 292 (2012). http://doi.org/10.1109/TED.2011.2175228
Abstract: Germanium is a widely used material for tunnel FETs because of its small band gap and compatibility with silicon. Typically, only the indirect band gap of Ge at 0.66 eV is considered. However, direct band-to-band tunneling (BTBT) in Ge should be included in tunnel FET modeling and simulations since the energy difference between the Ge conduction band edges at the L and G valleys is only 0.14 eV at room temperature. In this paper, we theoretically calculate the parameters A and B of Kane's direct and indirect BTBT models at different tunneling directions ([100], [110], and [111]) for Si, Ge and unstrained Si1-xGex. We highlight how the direct BTBT component becomes more important as the Ge mole fraction increases. The calculation of the band-to-band generation rate in the uniform electric field limit reveals that direct tunneling always dominates over indirect tunneling in Ge. The impact of the direct transition in Ge on the performance of two realistic tunnel field-effect transistor configurations is illustrated with TCAD simulations. The influence of field-induced quantum confinement is included in the analysis based on a back-of-the-envelope calculation.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.605
Times cited: 212
DOI: 10.1109/TED.2011.2175228
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“Distribution of fields and charge carriers in cylindrical nanosize silicon-based metal-oxide-semiconductor structures”. Pokatilov EP, Fomin VM, Balaban SN, Gladilin VN, Klimin SN, Devreese JT, Magnus W, Schoenmaker W, Collaert N, van Rossum M, de Meyer K, Journal Of Applied Physics 85, 6625 (1999). http://doi.org/10.1063/1.370171
Keywords: A1 Journal article; Electron Microscopy for Materials Science (EMAT);
Impact Factor: 2.068
Times cited: 16
DOI: 10.1063/1.370171
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“A method to calculate tunneling leakage currents in silicon inversion layers”. Lujan GS, Sorée B, Magnus W, de Meyer K, Journal of applied physics 100, 033708 (2006). http://doi.org/10.1063/1.2219343
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.068
Times cited: 1
DOI: 10.1063/1.2219343
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“A model determining optimal doping concentration and material's band gap of tunnel field-effect transistors”. Vandenberghe WG, Verhulst AS, Kao K-H, De Meyer K, Sorée B, Magnus W, Groeseneken G, Applied physics letters 100, 193509 (2012). http://doi.org/10.1063/1.4714544
Abstract: We develop a model for the tunnel field-effect transistor (TFET) based on the Wentzel-Kramer-Brillouin approximation which improves over existing semi-classical models employing generation rates. We hereby introduce the concept of a characteristic tunneling length in direct semiconductors. Based on the model, we show that a limited density of states results in an optimal doping concentration as well as an optimal material's band gap to obtain the highest TFET on-current at a given supply voltage. The observed optimal-doping trend is confirmed by 2-dimensional quantum-mechanical simulations for silicon and germanium. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4714544]
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 25
DOI: 10.1063/1.4714544
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“Optimization of gate-on-source-only tunnel FETs with counter-doped pockets”. Kao K-H, Verhulst AS, Vandenberghe WG, Sorée B, Magnus W, Leonelli D, Groeseneken G, De Meyer K, IEEE transactions on electron devices 59, 2070 (2012). http://doi.org/10.1109/TED.2012.2200489
Abstract: We investigate a promising tunnel FET configuration having a gate on the source only, which is simultaneously exhibiting a steeper subthreshold slope and a higher ON-current than the lateral tunneling configuration with a gate on the channel. Our analysis is performed based on a recently developed 2-D quantum-mechanical simulator calculating band-to-band tunneling and including quantum confinement (QC). It is shown that the two disadvantages of the structure, namely, the sensitivity to gate alignment and the physical oxide thickness, are mitigated by placing a counter-doped parallel pocket underneath the gate-source overlap. The pocket also significantly reduces the field-induced QC. The findings are illustrated with all-Si and all-Ge gate-on-source-only tunnel field-effect transistor simulations.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.605
Times cited: 72
DOI: 10.1109/TED.2012.2200489
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“Tensile strained Ge tunnel field-effect transistors: k\cdot p material modeling and numerical device simulation”. Kao K-H, Verhulst AS, Van de Put M, Vandenberghe WG, Sorée B, Magnus W, De Meyer K, Journal of applied physics 115, 044505 (2014). http://doi.org/10.1063/1.4862806
Abstract: Group IV based tunnel field-effect transistors generally show lower on-current than III-V based devices because of the weaker phonon-assisted tunneling transitions in the group IV indirect bandgap materials. Direct tunneling in Ge, however, can be enhanced by strain engineering. In this work, we use a 30-band k.p method to calculate the band structure of biaxial tensile strained Ge and then extract the bandgaps and effective masses at Gamma and L symmetry points in k-space, from which the parameters for the direct and indirect band-to-band tunneling (BTBT) models are determined. While transitions from the heavy and light hole valence bands to the conduction band edge at the L point are always bridged by phonon scattering, we highlight a new finding that only the light-holelike valence band is strongly coupling to the conduction band at the Gamma point even in the presence of strain based on the 30-band k.p analysis. By utilizing a Technology Computer Aided Design simulator equipped with the calculated band-to-band tunneling BTBT models, the electrical characteristics of tensile strained Ge point and line tunneling devices are self-consistently computed considering multiple dynamic nonlocal tunnel paths. The influence of field-induced quantum confinement on the tunneling onset is included. Our simulation predicts that an on-current up to 160 (260) mu A/mu m can be achieved along with on/off ratio > 10(6) for V-DD = 0.5V by the n-type (p-type) line tunneling device made of 2.5% biaxial tensile strained Ge. (C) 2014 AIP Publishing LLC.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.068
Times cited: 26
DOI: 10.1063/1.4862806
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“Modeling the impact of junction angles in tunnel field-effect transistors”. Kao K-H, Verhulst AS, Vandenberghe WG, Sorée B, Groeseneken G, De Meyer K, Solid state electronics 69, 31 (2012). http://doi.org/10.1016/j.sse.2011.10.032
Abstract: We develop an analytical model for a tunnel field-effect transistor (TFET) with a tilted source junction angle. The tunnel current is derived by using circular tunnel paths along the electric field. The analytical model predicts that a smaller junction angle improves the TFET performance, which is supported by device simulations. An analysis is also made based on straight tunnel paths and tunnel paths corresponding to the trajectory of a classical particle. In all the aforementioned cases, the same conclusions are obtained. A TFET configuration with an encroaching polygon source junction is studied to analyze the junction angle dependence at the smallest junction angles. The improvement of the subthreshold swing (SS) with decreasing junction angle can be achieved by using thinner effective oxide thickness, smaller band gap material and longer encroaching length of the encroaching junction. A TFET with a smaller junction angle on the source side also has an innate immunity against the degradation of the fringing field from the gate electrode via a high-k spacer. A large junction angle on the drain side can suppress the unwanted ambipolar current of TFETs. (c) 2011 Elsevier Ltd. All rights reserved.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.58
Times cited: 9
DOI: 10.1016/j.sse.2011.10.032
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“General 2D Schrödinger-Poisson solver with open boundary conditions for nano-scale CMOS transistors”. Pourghaderi MA, Magnus W, Sorée B, de Meyer K, Meuris M, Heyns M, Journal of computational electronics 7, 475 (2008). http://doi.org/10.1007/s10825-008-0257-8
Abstract: Employing the quantum transmitting boundary (QTB) method, we have developed a two-dimensional Schrödinger-Poisson solver in order to investigate quantum transport in nano-scale CMOS transistors subjected to open boundary conditions. In this paper we briefly describe the building blocks of the solver that was originally written to model silicon devices. Next, we explain how to extend the code to semiconducting materials such as germanium, having conduction bands with energy ellipsoids that are neither parallel nor perpendicular to the channel interfaces or even to each other. The latter introduces mixed derivatives in the 2D effective mass equation, thereby heavily complicating the implementation of open boundary conditions. We present a generalized quantum transmitting boundary method that mainly leans on the completeness of the eigenstates of the effective mass equation. Finally, we propose a new algorithm to calculate the chemical potentials of the source and drain reservoirs, taking into account their mutual interaction at high drain voltages. As an illustration, we present the potential and carrier density profiles obtained for a (111) Ge NMOS transistor as well as the ballistic current characteristics.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.526
Times cited: 3
DOI: 10.1007/s10825-008-0257-8
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“A new method to calculate leakage current and its applications for sub-45nm MOSFETs”. Lujan GS, Magnus W, Soree B, Pourghaderi MA, Veloso A, van Dal MJH, Lauwers A, Kubicek S, De Gendt S, Heyns M, De Meyer K, Solid-State Device Research (ESSDERC), European Conference
T2 – ESSDERC 2005 : proceedings of 35th European Solid-State Device Research Conference, September 12-16, 2005, Grenoble, France. Ieee, S.l., page 489 (2005).
Abstract: This paper proposes a new quantum mechanical model for the calculation of leakage currents. The model incorporates both variational calculus and the transfer matrix method to compute the subband energies and the life times of the inversion layer states. The use of variational calculus simplifies the subband energy calculation due to the analytical firm of the wave functions, which offers an attractive perspective towards the calculation of the electron mobility in the channel. The model can be extended to high-k dielectrics with several layers. Good agreement between experimental data and simulation results is obtained for metal gate capacitors.
Keywords: H1 Book chapter; Condensed Matter Theory (CMT)
DOI: 10.1109/ESSDER.2005.1546691
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