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Author | Clima, S.; Garbin, D.; Devulder, W.; Keukelier, J.; Opsomer, K.; Goux, L.; Kar, G.S.; Pourtois, G. | ||||
Title | Material relaxation in chalcogenide OTS SELECTOR materials | Type | A1 Journal article | ||
Year | 2019 | Publication | Microelectronic engineering | Abbreviated Journal | Microelectron Eng |
Volume | 215 | Issue | 215 | Pages | 110996 |
Keywords | A1 Journal article; Engineering sciences. Technology; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) | ||||
Abstract | Nature of the mobility-gap states in amorphous Ge-rich Ge50Se50 was found to be related to homopolar Ge bonds in the chains/clusters of Ge atoms. Threshold switching material suffers Ge-Ge bond concentration drift during material ageing, which can explain the observed reliability of the aGe(50)Se(50) selector devices. Strong Ge-N bonds were introduced to alleviate the observed instability. | ||||
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Corporate Author | Thesis | ||||
Publisher | Place of Publication ![]() |
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Language | Wos | 000480665600008 | Publication Date | 2019-05-21 | |
Series Editor | Series Title | Abbreviated Series Title | |||
Series Volume | Series Issue | Edition | |||
ISSN | 0167-9317 | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
Impact Factor | 1.806 | Times cited | 1 | Open Access | |
Notes | Approved | Most recent IF: 1.806 | |||
Call Number | UA @ admin @ c:irua:161905 | Serial | 6308 | ||
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