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Electron microscopy of fullerenes and related materials”. Van Tendeloo G, Amelinckx S Wiley-VCH, Weinheim, page 353 (2000).
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Electron microscopy of interfaces in new materials”. Van Tendeloo G, Goessens C, Schryvers D, van Haverbergh J, de Veirman A, van Landuyt J s.l., page 200 (1991).
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Electron microscopy of recent high Tc superconductors”. Amelinckx S, Van Tendeloo G, Physica: C : superconductivity 235/240, 162 (1994). http://doi.org/10.1016/0921-4534(94)91338-2
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Electron microscopy of stress-induced martensite and pretransition microstructures in Ni62.5Al37.5”. Schryvers D, Tanner LE, Shape memory materials and phenomena: fundamental aspects and applications 246, 33 (1992)
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Electron microscopy of C60 and C70 fullerites”. Van Tendeloo G, Amelinckx S Springer, Berlin, page 182 (1993).
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Electron microscopy on nanoparticles: structure of C60 and C70 nanopraticles”. Pauwels B, Van Tendeloo G, Joutsensaari J, Kauppinen EI, (1999)
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Amelinckx S, van Dyck D, van Landuyt J, Van Tendeloo G (1997) Electron microscopy: principles and fundamentals. Vch, Weinheim
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Electron microscopy studies of martensite microstructures”. Schryvers D, Journal de physique: 4 C5, 109 (1997). http://doi.org/10.1051/jp4:1997517
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Electron microscopy study of coiled carbon tubules”. Bernaerts D, Zhang XB, Zhang XF, Amelinckx S, Van Tendeloo G, van Landuyt J, Ivanov V, Nagy JB, Philosophical magazine: A: physics of condensed matter: defects and mechanical properties 71, 605 (1995). http://doi.org/10.1080/01418619508244470
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Electron microscopy study of defects in synthetic diamond layers”. Luyten W, Van Tendeloo G, Amelinckx S, Collins JL, Philosophical magazine: A: physics of condensed matter: defects and mechanical properties 66, 899 (1992). http://doi.org/10.1080/01418619208247998
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Electron microscopy study of ternary precipitates in Ni39.6Mn47.5Ti12.9”. Seo JW, Schryvers D, Potapov P, , 17 (1998)
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Electron microscopy study of the formation of Ni5Al3 in a Ni62.5Al37.5 B2 alloy: 1: precipitation and growth”. Schryvers D, Ma Y, Toth L, Tanner LE, Acta metallurgica et materialia 43, 4045 (1995). http://doi.org/10.1016/0956-7151(95)00101-Z
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Electron microscopy study of the formation of Ni5Al3 in a Ni62.5Al37.5 B2 alloy: 2: plate crystallography”. Schryvers D, Ma Y, Toth L, Tanner LE, Acta metallurgica et materialia 43, 4057 (1995). http://doi.org/10.1016/0956-7151(95)00102-2
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Electron microscopy study of twin sequences and branching in Ni66Al34 3r martensite”. Schryvers D, van Landuyt JT, Proceedings Of The International Conference On Martensitic Transformations (icomat-92) , 263 (1993)
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Electron-mobility in 2 coupled delta-layers”. Hai, Studart, Peeters FM, Physical review : B : condensed matter and materials physics 52, 11273 (1995). http://doi.org/10.1103/PhysRevB.52.11273
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Electron mobility in Si δ-doped GaAs with spatial correlations in the distribution of charged impurities”. Shi JM, Koenraad PM, van de Stadt AFW, Peeters FM, Farias GA, Devreese JT, Wolter JH, Wilamowski Z, Physical review : B : condensed matter and materials physics 55, 13093 (1997)
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Electron mobility in Si delta doped GaAs”. Koenraad PM, van de Stadt AFW, Hai GQ, Shi JM, Vansant P, Peeters FM, Devreese JT, Perenboom JAAJ, Wolter JH, Physica: B : condensed matter 211, 462 (1995). http://doi.org/10.1016/0921-4526(94)01094-H
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Electron mobility in Si delta-doped GaAs”. Hai GQ, Studart N, Peeters FM, Devreese JT, Koenraad PM, van de Stadt AFW, Wolter JH, Proceedings of the International Conference on the Physics of Semiconductors 22, 823 (1994)
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Electron mobility in two coupled &delta, layers”. Hai GQ, Studart N, Peeters FM, Physical review : B : condensed matter and materials physics 52, 11273 (1995)
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Electron optical-phonon coupling in GaAs/AlxGa1-xAs quantum wells due to interface, slab and half-space modes”. Hai GQ, Peeters FM, Devreese JT, Physical review : B : condensed matter and materials physics 48, 4666 (1993). http://doi.org/10.1103/PhysRevB.48.4666
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Electron scattering on circular symmetric magnetic profiles in a two-dimensional electron gas”. Reijniers J, Peeters FM, Matulis A, Physical review : B : condensed matter and materials physics 64, 245314 (2001). http://doi.org/10.1103/PhysRevB.64.245314
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Electron spin and charge switching in a coupled quantum-dot.quantum ring system”. Szafran B, Peeters FM, Bednarek S, Physical review : B : condensed matter and materials physics 70, 12310 (2004). http://doi.org/10.1103/PhysRevB.70.125310
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Biermans E (2012) Electron tomography : from qualitative to quantitative. Antwerpen
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Electron-vortex interaction in a quantum dot”. Tavernier MB, Anisimovas E, Peeters FM, International journal of modern physics: B: condensed matter physics, statistical physics, applied physics T2 –, 16th International Conference on High Magnetic Fields in Semiconductor, Physics, AUG 02-06, 2004, Florida State Univ, NHMFL, Tallahassee, FL 18, 3633 (2004). http://doi.org/10.1142/S0217979204027177
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Electron-vortex separation in quantum dots”. Anisimovas E, Tavernier MB, Peeters FM, Physical review : B : condensed matter and materials physics 77, 045327 (2008). http://doi.org/10.1103/PhysRevB.77.045327
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Electron wave-function spillover in self-assembled InAs/InP quantum wires”. Maes J, Hayne M, Sidor Y, Partoens B, Peeters FM, González Y, González L, Fuster D, Garcia JM, Moshchalkov VV, Physical review : B : condensed matter and materials physics 70, 155311 (2004). http://doi.org/10.1103/PhysRevB.70.155311
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Masir MR (2012) Electronic properties of graphene in inhomogeneous magnetic fields. Antwerpen
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Electronic properties of hydrogenated silicene and germanene”. Houssa M, Scalise E, Sankaran K, Pourtois G, Afanas'ev VV, Stesmans A, Applied physics letters 98, 223107 (2011). http://doi.org/10.1063/1.3595682
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Electronic properties of two-dimensional hexagonal germanium”. Houssa M, Pourtois G, Afanas'ev VV, Stesmans A, Applied physics letters 96, 082111 (2010). http://doi.org/10.1063/1.3332588
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Electronic states above a helium film suspended on a ring-shaped substrate”. Ramos ACA, Chaves A, Farias GA, Peeters FM, Physical review : B : condensed matter and materials physics 77, 045415 (2008). http://doi.org/10.1103/PhysRevB.77.045415
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