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“Interfacial oxidation and photoluminescence of InP-Based core/shell quantum dots”. Tessier MD, Baquero EA, Dupont D, Grigel V, Bladt E, Bals S, Coppel Y, Hens Z, Nayral C, Delpech F, Chemistry of materials 30, 6877 (2018). http://doi.org/10.1021/ACS.CHEMMATER.8B03117
Abstract: Indium phosphide colloidal quantum dots (QDs) are emerging as an efficient cadmium-free alternative for optoelectronic applications. Recently, syntheses based on easy-to-implement aminophosphine precursors have been developed. We show by solid-state nuclear magnetic resonance spectroscopy that this new approach allows oxide-free indium phosphide core or core/shell quantum dots to be made. Importantly, the oxide-free core/shell interface does not help in achieving higher luminescence efficiencies. We demonstrate that in the case of InP/ZnS and InP/ZnSe QDs, a more pronounced oxidation concurs with a higher photoluminescence efficiency. This study suggests that a II-VI shell on a III-V core generates an interface prone to defects. The most efficient InP/ZnS or InP/ZnSe QDs are therefore made with an oxide buffer layer between the core and the shell: it passivates these interface defects but also results in a somewhat broader emission line width.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 9.466
Times cited: 74
DOI: 10.1021/ACS.CHEMMATER.8B03117
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