“Interface effects on magnetopolarons in GaAs/AlxGa1-xAs quantum wells at high magnetic fields”. Hai GQ, Peeters FM, Studart N, Wang YJ, McCombe BD, Physical review : B : condensed matter and materials physics 58, 7822 (1998). http://doi.org/10.1103/PhysRevB.58.7822
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 8
DOI: 10.1103/PhysRevB.58.7822
|
“Interface optical phonon mode coupling in GaAs/AlAs quantum wells at high magnetic fields”. Hai GQ, Peeters FM, Devreese JT, Physica: B : condensed matter 184, 289 (1993). http://doi.org/10.1016/0921-4526(93)90367-F
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Impact Factor: 1.319
Times cited: 3
DOI: 10.1016/0921-4526(93)90367-F
|
“Intergrowth of components and ramps in coffin-shaped ZSM-5 zeolite crystals unraveled by focused ion beam-assisted transmission electron microscopy”. Lu J, Roeffaers MBJ, Bartholomeeusen E, Sels BF, Schryvers D, Microscopy and microanalysis 20, 42 (2014). http://doi.org/10.1017/S1431927613013731
Abstract: Scanning electron microscopy, focused ion beam (FIB), and transmission electron microscopy are combined to study the intergrowth of 90 degrees rotational components and of ramps in coffin-shaped ZSM-5 crystals. The 90 degrees rotational boundaries with local zig-zag features between different intergrowth components are observed in the main part of crystal. Also a new kind of displacement boundary is described. At the displacement boundary there is a shift of the unit cells along the boundary without a change in orientation. Based on lamellae prepared with FIB from different positions of the ramps and crystal, the orientation relationships between ramps and the main part of the crystal are studied and the three-dimensional morphology and growth mechanism of the ramp are illustrated.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.891
Times cited: 7
DOI: 10.1017/S1431927613013731
|
“Interminiband spectroscopy of biased superlattices”. Helm M, Hilber W, Strasser G, de Meester R, Peeters FM, Wacker A, Physica. E: Low-dimensional systems and nanostructures 7, 274 (2000). http://doi.org/10.1016/S1386-9477(99)00275-1
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.221
Times cited: 1
DOI: 10.1016/S1386-9477(99)00275-1
|
“Internal calibration technique for HREM studies of nanoscale particles”. Schryvers D, Goessens C, Safran G, Toth L, Microscopy research and technique
T2 –, JOINT MEETING OF DUTCH SOC FOR ELECTRON MICROSCOPY / BELGIAN SOC FOR, ELECTRON MICROSCOPY / BELGIAN SOC FOR CELL BIOLOGY, DEC 10-11, 1992, ANTWERP, BELGIUM 25, 185 (1993). http://doi.org/10.1002/jemt.1070250216
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.154
Times cited: 1
DOI: 10.1002/jemt.1070250216
|
“Internal standard activation analysis of silicon in steel”. van Grieken R, Gijbels R, Speecke A, Hoste J, Analytica chimica acta 43, 381 (1968). http://doi.org/10.1016/S0003-2670(00)89235-1
Abstract: Non-destructive 14-MeV neutron activation analysis for silicon in steel has been applied with 56Mn as internal standard.56Mn is formed from the iron matrix via the 56Fe(n,p)56Mn reaction. Several methods of internal standardisation via56Mn are discussed. The 0.84-MeV photopeak of 56Mn is recommended if steel samples of about the same composition are to be analysed. Chemically analysed steel samples are used as silicon standards. A precision of 0.7% was obtained for an analysis plus standardisation time of 13 min. Special attention was paid to interferences produced by concentration changes of impurity elements. Several possible sources of errors were investigated.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT); AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
Impact Factor: 4.513
Times cited: 14
DOI: 10.1016/S0003-2670(00)89235-1
|
“Interplay between s-d exchange interaction and Rashba effect: spin-polarized transport”. Yang W, Chang K, Wu XG, Zheng HZ, Peeters FM;, Applied physics letters 89 (2006). http://doi.org/10.1063/1.2357888
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 10
DOI: 10.1063/1.2357888
|
“Interplay of 2D and 3D charge carriers in Si-δ-doped InSb layers grown epitaxially on GaAs”. de Keyser A, Bogaerts R, Karavolas VC, van Bockstal L, Herlach F, Peeters FM, van de Graaf W, Borghs G, Solid state electronics 40, 395 (1996). http://doi.org/10.1016/0038-1101(96)84617-X
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.504
Times cited: 2
DOI: 10.1016/0038-1101(96)84617-X
|
“Interplay of atomic displacement in the quantum magnet (CuCI)LaNb2O7”. Tsirlin AA, Abakumov AM, Van Tendeloo G, Rosner H, Physical review : B : condensed matter and materials physics 82, 054107 (2010). http://doi.org/10.1103/PhysRevB.82.054107
Abstract: We report on the crystal structure of the quantum magnet CuClLaNb2O7 that was controversially described with respect to its structural organization and magnetic behavior. Using high-resolution synchrotron powder x-ray diffraction, electron diffraction, transmission electron microscopy, and band-structure calculations, we solve the room-temperature structure of this compound -CuClLaNb2O7 and find two high-temperature polymorphs. The -CuClLaNb2O7 phase, stable above 640 K, is tetragonal with asub=3.889 Å, csub =11.738 Å, and the space group P4/mmm. In the -CuClLaNb2O7 structure, the Cu and Cl atoms are randomly displaced from the special positions along the 100 directions. The phase asub2asubcsub, space group Pbmm and the phase 2asub2asubcsub, space group Pbam are stable between 640 K and 500 K and below 500 K, respectively. The structural changes at 500 and 640 K are identified as order-disorder phase transitions. The displacement of the Cl atoms is frozen upon the → transformation while a cooperative tilting of the NbO6 octahedra in the phase further eliminates the disorder of the Cu atoms. The low-temperature -CuClLaNb2O7 structure thus combines the two types of the atomic displacements that interfere due to the bonding between the Cu atoms and the apical oxygens of the NbO6 octahedra. The precise structural information resolves the controversy between the previous computation-based models and provides the long-sought input for understanding CuClLaNb2O7 and related compounds with unusual magnetic properties.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 13
DOI: 10.1103/PhysRevB.82.054107
|
“Interpretation of electron diffraction from carbon nanotube bundles presenting precise helicity”. Colomer J-F, Henrard L, Launois P, Van Tendeloo G, Lucas AA, Lambin P, Physical review : B : condensed matter and materials physics 70, 075408 (2004). http://doi.org/10.1103/PhysRevB.70.075408
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 19
DOI: 10.1103/PhysRevB.70.075408
|
“Interpretation of TOF-SIMS depth profiles from ultrashallow high-k dielectric stacks assisted by hybrid collisional computer simulation”. Ignatova VA, Möller W, Conard T, Vandervorst W, Gijbels R, Applied physics A : materials science &, processing 81, 71 (2005). http://doi.org/10.1007/s00339-005-3239-8
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.455
Times cited: 4
DOI: 10.1007/s00339-005-3239-8
|
“Intersubband-coupling and screening effects on the electron transport in a quasi-two-dimensional δ-doped semiconductor system”. Hai G-Q, Studart N, Peeters FM, Koenraad PM, Wolter JH, Journal of applied physics 80, 5809 (1996). http://doi.org/10.1063/1.363573
Abstract: The effects due to intersubband coupling and screening on the ionized impurity scattering are studied for a quasi-two-dimensional electron system in delta-doped semiconductors. We found that intersubband coupling plays an essential role in describing the screening properties and the effect of ionized impurity scattering on the mobility in a multisubband system. At the onset of the occupation of a higher subband, the screening due to the intersubband coupling leads to a reduction of the small angle scattering rate in the lower subband. We showed that such an effect is significant in a delta-doped quantum well and results in a pronounced increase of the quantum mobility at the onset of the occupation of a higher subband. (C) 1996 American Institute of Physics.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.183
Times cited: 40
DOI: 10.1063/1.363573
|
“Intersubband plasmons in quasi-one-dimensional electron systems on a liquid helium surface”. Tavares MRS, Hai G-Q, Peeters FM, Studart N, Physical review : B : condensed matter and materials physics 68, 140504 (2003). http://doi.org/10.1103/PhysRevB.68.140504
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 3
DOI: 10.1103/PhysRevB.68.140504
|
“Intersubband transitions in InAs/GaSb superlattices in a parallel magnetic field”. de Meester RHJ, Peeters FM, Lakrimi M, Nicholas RJ, Poulter AJL, Mason NJ, Walker PJ, Physica. E: Low-dimensional systems and nanostructures 7, 93 (2000)
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.221
Times cited: 1
|
“Intersublevel absorption in stacked n-type doped self-assembled quantum dots”. Veljkovic D, Tadić, M, Peeters FM, Materials science forum 494, 37 (2005)
Abstract: The intersublevel absorption in n-doped InAs/GaAs self-assembled quantum-dot molecules composed of three quantum dots is theoretically considered. The transition matrix elements and the transition energies are found to vary considerably with the spacer thickness. For s polarized light, decreasing the thickness of the spacer between the dots brings about crossings between the transition matrix elements, but the overall absorption is not affected by the variation of the spacer thickness. For p-polarized light and thick spacers, there are no available transitions in the single quantum dot, but a few of them emerge as a result of the electron state splitting in the stacks of coupled quantum dots, which leads to a considerable increase of the transition matrix elements, exceeding by an order of magnitude values of the matrix elements for s-polarized light.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
|
“Intersublevel magnetoabsorption in the valence band of p-type InAs/GaAs and Ge/Si self-assembled quantum dots”. Tadić, M, Peeters FM, Physical review : B : condensed matter and materials physics 71, 125342 (2005). http://doi.org/10.1103/PhysRevB.71.125342
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 7
DOI: 10.1103/PhysRevB.71.125342
|
“Inverse flux quantum periodicity of magnetoresistance oscillations in two-dimensional short-period surface superlattices”. Wang XF, Vasilopoulos P, Peeters FM, Physical review : B : condensed matter and materials physics 69, 035331 (2004). http://doi.org/10.1103/PhysRevB.69.035331
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 10
DOI: 10.1103/PhysRevB.69.035331
|
“Investigating the plasma chemistry for the synthesis of carbon nanotubes/nanofibres in an inductively coupled plasma enhanced CVD system : the effect of different gas mixtures”. Mao M, Bogaerts A, Journal of physics: D: applied physics 43, 205201 (2010). http://doi.org/10.1088/0022-3727/43/20/205201
Abstract: A hybrid model, called the hybrid plasma equipment model (HPEM), was used to study an inductively coupled plasma in gas mixtures of H2 or NH3 with CH4 or C2H2 used for the synthesis of carbon nanotubes or carbon nanofibres (CNTs/CNFs). The plasma properties are discussed for different gas mixtures at low and moderate pressures, and the growth precursors for CNTs/CNFs are analysed. It is found that C2H2, C2H4 and C2H6 are the predominant molecules in CH4 containing plasmas besides the feedstock gas, and serve as carbon sources for CNT/CNF formation. On the other hand, long-chain hydrocarbons are observed in C2H2-containing plasmas. Furthermore, the background gases CH4 and C2H2 show a different decomposition rate with H2 or NH3 addition at moderate pressures.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.588
Times cited: 52
DOI: 10.1088/0022-3727/43/20/205201
|
“Investigating the plasma chemistry for the synthesis of carbon nanotubes/nanofibres in an inductively coupled plasma-enhanced CVD system : the effect of processing parameters”. Mao M, Bogaerts A, Journal of physics: D: applied physics 43, 315203 (2010). http://doi.org/10.1088/0022-3727/43/31/315203
Abstract: A parameter study is carried out for an inductively coupled plasma used for the synthesis of carbon nanotubes or carbon nanofibres (CNTs/CNFs), by means of the Hybrid Plasma Equipment Model. The influence of processing parameters including gas ratio for four different gas mixtures typically used for CNT/CNF growth (i.e. CH4/H2, CH4/NH3, C2H2/H2 and C2H2/NH3), inductively coupled plasma (ICP) power (501000 W), operating pressure (10 mTorr1 Torr), bias power (01000 W) and temperature of the substrate (01000 °C) on the plasma chemistry is investigated and the optimized conditions for CNT/CNF growth are analysed. Summarized, our calculations suggest that a lower fraction of hydrocarbon gases (CH4 or C2H2, i.e. below 20%) and hence a higher fraction of etchant gases (H2 or NH3) in the gas mixture result in more 'clean' conditions for controlled CNT/CNF growth. The same applies to a higher ICP power, a moderate ICP gas pressure above 100 mTorr (at least for single-walled carbon nanotubes), a high bias power (for aligned CNTs) and an intermediate substrate temperature.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.588
Times cited: 17
DOI: 10.1088/0022-3727/43/31/315203
|
“Investigation by convergent beam electron diffraction of the stress around shallow trench isolation structures”. Stuer C, van Landuyt J, Bender H, de Wolf I, Rooyackers R, Badenes G, Journal of the electrochemical society 148, G597 (2001). http://doi.org/10.1149/1.1404970
Abstract: Convergent beam electron diffraction (CBED) is used in this study to investigate the stress distribution around shallow trench isolation (STI) structures. Attention is given to the influence of the different processing parameters and the width and spacing of the structures. The use of a wet or a dry pregate oxidation is found to have a strong influence on the stress behavior. Isolated lines show more stress, leading to the formation of defects in the silicon substrate if a wet pregate oxidation is used. The CBED analyses are compared with micro-Raman and bright-field transmission electron microscopy measurements. (C) 2001 The Electrochemical Society.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.259
Times cited: 13
DOI: 10.1149/1.1404970
|
“Investigation by electron diffraction microscopy of (RE)BaCuOS polycrystalline ceramic compounds: interpretation of unexpected superstructures and influence of secondary phases”. Cloots R, Rulmont A, Krekels T, Van Tendeloo G, Diko P, Ausloos M, Journal of crystal growth 129, 394 (1993)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.698
Times cited: 5
|
“An investigation into the dominant reactions for ethylene destruction in non-thermal atmospheric plasmas”. Aerts R, Tu X, De Bie C, Whitehead JC, Bogaerts A, Plasma processes and polymers 9, 994 (2012). http://doi.org/10.1002/ppap.201100168
Abstract: A crucial step, which is still not well understood in the destruction of volatile organic compounds (VOCs) with low temperature plasmas, is the initiation of the process. Here, we present a kinetic model for the destruction of ethylene in low temperature plasmas that allows us to calculate the relative importance of all plasma species and their related reactions. Modifying the ethylene concentration and/or the SED had a major impact on the relative importance of the radicals (i.e., mainly atomic oxygen) and the metastable nitrogen (i.e., more specifically N2(equation image)) in the destruction process. Our results show that the direct destruction by electron impact reactions for ethylene can be neglected; however, we can certainly not neglect the influence of N2(equation image)).
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.846
Times cited: 46
DOI: 10.1002/ppap.201100168
|
“Investigation of 50 Hz pulsed DC nitrogen plasma with active screen cage by trace rare gas optical emission spectroscopy”. Saeed A, Khan AW, Shafiq M, Jan F, Abrar M, Zaka-ul-Islam M, Zakaullah M, Plasma science &, technology 16, 324 (2014). http://doi.org/10.1088/1009-0630/16/4/05
Abstract: Optical emission spectroscopy is used to investigate the nitrogen-hydrogen with trace rare gas (4% Ar) plasma generated by 50 Hz pulsed DC discharges. The filling pressure varies from 1 mbar to 5 mbar and the current density ranges from 1 mA.cm(-2) to 4 mA.cm(-2). The hydrogen concentration in the mixture plasma varies from 0% to 80%, with the objective of identifying the optimum pressure, current density and hydrogen concentration for active species ([N] and [N-2]) generation. It is observed that in an N-2-H-2 gas mixture, the concentration of N atom density decreases with filling pressure and increases with current density, with other parameters of the discharge kept unchanged. The maximum concentrations of active species were found for 40% H-2 in the mixture at 3 mbar pressure and current density of 4 mA.cm(-2).
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 0.83
Times cited: 5
DOI: 10.1088/1009-0630/16/4/05
|
“Investigation of etching and deposition processes of Cl2/O2/Ar inductively coupled plasmas on silicon by means of plasmasurface simulations and experiments”. Tinck S, Boullart W, Bogaerts A, Journal of physics: D: applied physics 42, 095204 (2009). http://doi.org/10.1088/0022-3727/42/9/095204
Abstract: In this paper, a simulation method is described to predict the etching behaviour of Cl2/O2/Ar inductively coupled plasmas on a Si substrate, as used in shallow trench isolation for the production of electronic devices. The hybrid plasma equipment model (HPEM) developed by Kushner et al is applied to calculate the plasma characteristics in the reactor chamber and two additional Monte Carlo simulations are performed to predict the fluxes, angles and energy of the plasma species bombarding the Si substrate, as well as the resulting surface processes such as etching and deposition. The simulations are performed for a wide variety of operating conditions such as gas composition, chamber pressure, power deposition and substrate bias. It is predicted by the simulations that when the fraction of oxygen in the gas mixture is too high, the oxidation of the Si substrate is superior to the etching of Si by chlorine species, resulting in an etch rate close to zero as is also observed in the experiments.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.588
Times cited: 23
DOI: 10.1088/0022-3727/42/9/095204
|
“Investigation of growth mechanisms of clusters in a silane discharge with the use of a fluid model”. de Bleecker K, Bogaerts A, Goedheer W, Gijbels R, IEEE transactions on plasma science 32, 691 (2004). http://doi.org/10.1109/TPS.2004.826095
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.052
Times cited: 29
DOI: 10.1109/TPS.2004.826095
|
“Investigation of laser output power saturation in the He-Cu+ IR hollow cathode discharge laser by experiments and numerical modeling”. Bogaerts A, Gijbels R, Grozeva M, Sabotinov N, Physica scripta T105, 90 (2003). http://doi.org/10.1238/Physica.Topical.105a00090
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.28
DOI: 10.1238/Physica.Topical.105a00090
|
“Investigation of the morphology of the mesoporous SBA-16 and SBA-15 materials”. Stevens WJJ, Lebeau K, Mertens M, Van Tendeloo G, Cool P, Vansant EF, The journal of physical chemistry : B : condensed matter, materials, surfaces, interfaces and biophysical 110, 9183 (2006). http://doi.org/10.1021/jp0548725
Keywords: A1 Journal article; Laboratory of adsorption and catalysis (LADCA); Electron microscopy for materials research (EMAT)
Impact Factor: 3.177
Times cited: 109
DOI: 10.1021/jp0548725
|
“The ion- and atom-induced secondary electron emission yield: numerical study for the effect of clean and dirty cathode surfaces”. Bogaerts A, Gijbels R, Plasma sources science and technology 11, 27 (2002). http://doi.org/10.1088/0963-0252/11/1/303
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 3.302
Times cited: 51
DOI: 10.1088/0963-0252/11/1/303
|
“Ion beam synthesis of Te and Bi nanoclusters in silicon: the effect of post-implantation high frequency electromagnetic field”. Kalitzova M, Peeva A, Ignatova V, Lebedev OI, Zollo G, Vitali G, Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms 242, 209 (2006). http://doi.org/10.1016/j.nimb.2005.08.017
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.109
Times cited: 1
DOI: 10.1016/j.nimb.2005.08.017
|
“Ion beam synthesis of \beta-SiC at 950 degrees C and structural characterization”. Frangis N, Nejim A, Hemment PLF, Stoemenos J, van Landuyt J, Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms
T2 –, Symposium J on Correlated Effects in Atomic and Cluster Ion Bombardment and Implantation/Symposium C on Pushing the Limits of Ion Beam, Processing –, Fr 112, 325 (1996). http://doi.org/10.1016/0168-583X(95)01236-2
Abstract: The structure of beta-SiC formed by carbon implantation into Si at high temperatures (850-950 degrees C) at doses ranging between 0.2 X 10(18) to 1 X 10(18) cm(-2) at 200 keV, was studied by combined cross section and high resolution transmission electron microscopy (XTEM and HRTEM). Implantation was performed on (001) and (111) Si wafers. In both cases a buried beta-SiC layer was formed having the same orientation as the Si matrix.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 1.124
Times cited: 9
DOI: 10.1016/0168-583X(95)01236-2
|