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“Cycloidal versus skyrmionic states in mesoscopic chiral magnets”. Mulkers J, Milošević, MV, Van Waeyenberge B, Physical review : B : condensed matter and materials physics 93, 214405 (2016). http://doi.org/10.1103/PhysRevB.93.214405
Abstract: When subjected to the interfacially induced Dzyaloshinskii-Moriya interaction, the ground state in thin ferromagnetic films with high perpendicular anisotropy is cycloidal. The period of this cycloidal state depends on the strength of the Dzyaloshinskii-Moriya interaction. In this work, we have studied the effect of confinement on the magnetic ground state and excited states, and we determined the phase diagram of thin strips and thin square platelets by means of micromagnetic calculations. We show that multiple cycloidal states with different periods can be stable in laterally confined films, where the period of the cycloids does not depend solely on the Dzyaloshinskii-Moriya interaction strength but also on the dimensions of the film. The more complex states comprising skyrmions are also found to be stable, though with higher energy.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 28
DOI: 10.1103/PhysRevB.93.214405
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“From spin-polarized interfaces to giant magnetoresistance in organic spin valves”. Çakir D, Otalvaro DM, Brocks G, Physical review : B : condensed matter and materials physics 89, 115407 (2014). http://doi.org/10.1103/PHYSREVB.89.115407
Abstract: We calculate the spin-polarized electronic transport through a molecular bilayer spin valve from first principles, and establish the link between the magnetoresistance and the spin-dependent interactions at the metal-molecule interfaces. The magnetoresistance of a Fe vertical bar bilayer-C-70 vertical bar Fe spin valve attains a high value of 70% in the linearresponse regime, but it drops sharply as a function of the applied bias. The current polarization has a value of 80% in linear response and also decreases as a function of bias. Both these trends can be modeled in terms of prominent spin-dependent Fe vertical bar C-70 interface states close to the Fermi level, unfolding the potential of spinterface science to control and optimize spin currents.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 14
DOI: 10.1103/PHYSREVB.89.115407
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“Introducton to the special issue on electron crystallography”. Hadermann J, Palatinus L, And Materials 75, 462 (2019). http://doi.org/10.1107/S2052520619010783
Keywords: Editorial; Electron microscopy for materials research (EMAT)
Times cited: 2
DOI: 10.1107/S2052520619010783
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“Onset, evolution, and magnetic braking of vortex lattice instabilities in nanostructured superconducting films”. Adami O-A, Jelić, ŽL, Xue C, Abdel-Hafiez M, Hackens B, Moshchalkov VV, Milošević, MV, Van de Vondel J, Silhanek AV, Physical review: B: condensed matter and materials physics 92, 134506 (2015). http://doi.org/10.1103/PhysRevB.92.134506
Abstract: In 1976, Larkin and Ovchinnikov [Zh. Eksp. Teor. Fiz. 68, 1915 (1975) [Sov. Phys.–JETP 41, 960 (1976)]] predicted that vortex matter in superconductors driven by an electrical current can undergo an abrupt dynamic transition from a flux-flow regime to a more dissipative state at sufficiently high vortex velocities. Typically, this transition manifests itself as a large voltage jump at a particular current density, so-called instability current density J∗, which is smaller than the depairing current. By tuning the effective pinning strength in Al films, using an artificial periodic pinning array of triangular holes, we show that a unique and well-defined instability current density exists if the pinning is strong, whereas a series of multiple voltage transitions appear in the relatively weaker pinning regime. This behavior is consistent with time-dependent Ginzburg-Landau simulations, where the multiple-step transition can be unambiguously attributed to the progressive development of vortex chains and subsequently phase-slip lines. In addition, we explore experimentally the magnetic braking effects, caused by a thick Cu layer deposited on top of the superconductor, on the instabilities and the vortex ratchet effect.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 21
DOI: 10.1103/PhysRevB.92.134506
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“In situ HREM irradiation study of point-defect clustering in MBE-grown strained Si1-xGex/(001)Si structures”. Fedina L, Lebedev OI, Van Tendeloo G, van Landuyt J, Mironov OA, Parker EHC, Physical review : B : condensed matter and materials physics 61, 10336 (2000). http://doi.org/10.1103/PhysRevB.61.10336
Abstract: We present a detailed analysis of the point-defect clustering in strained Si/Si(1-x)Ge(x)/(001)Si structures, including the interaction of the point defects with the strained interfaces and the sample surface during 400 kV electron irradiation at room temperature. Point-defect cluster formation is very sensitive to the type and magnitude of the strain in the Si and Si(1-x)Ge(x) layers. A small compressive strain (-0.3%) in the SiGe alloy causes an aggregation of vacancies in the form of metastable [110]-oriented chains. They are located on {113} planes and further recombine with interstitials. Tensile strain in the Si layer causes an aggregation of interstitial atoms in the forms of additional [110] rows which are inserted on {113} planes with [001]-split configurations. The chainlike configurations are characterized by a large outward lattice relaxation for interstitial rows (0.13 +/-0.01 nm) and a very small inward relaxation for vacancy chains (0.02+/-0.01 nm). A compressive strain higher than -0.5% strongly decreases point-defect generation inside the strained SiGe alloy due to the large positive value of the formation volume of a Frenkel pair. This leads to the suppression of point-defect clustering in a strained SiGe alloy so that SiGe relaxes via a diffusion of vacancies from the Si layer, giving rise to an intermixing at the Si/SiGe interface. In material with a 0.9% misfit a strongly increased flow of vacancies from the Si layer to the SiGe layer and an increased biaxial strain in SiGe bath promote the preferential aggregation of vacancies in the (001) plane, which relaxes to form intrinsic 60 degrees dislocation loops.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 27
DOI: 10.1103/PhysRevB.61.10336
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“Model-based determination of dielectric function by STEM low-loss EELS”. Zhang L, Turner S, Brosens F, Verbeeck J, Physical review : B : condensed matter and materials physics 81, 035102 (2010). http://doi.org/10.1103/PhysRevB.81.035102
Abstract: Dielectric properties of materials are crucial in describing the electromagnetic response of materials. As devices are becoming considerably smaller than the optical wavelength, the conventional measuring methods based on optical response are limited by their spatial resolution. Electron energy loss spectroscopy performed in a scanning transmission electron microscope is a good alternative to obtain the dielectric properties with excellent spatial resolution. Due to the overlap of diffraction discs in scanning transmission electron microscopy, it is difficult to apply conventional experimental settings to suppress retardation losses. In this contribution, a relativistic dielectric model for the loss function is presented which is used in a model based optimization scheme to estimate the complex dielectric function of a material. The method is applied to experiments on bulk diamond and SrTiO3 and shows a good agreement with optical reference data when retardation effects are included. Application of this technique to nanoparticles is possible but several theoretical assumptions made in the model of the loss function are violated and interpretation becomes problematic.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Theory of quantum systems and complex systems
Impact Factor: 3.836
Times cited: 9
DOI: 10.1103/PhysRevB.81.035102
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“Crystal fields, disorder, and antiferromagnetic short-range order in Yb0.24Sn0.76Ru”. Klimczuk T, Wang CH, Lawrence JM, Xu Q, Durakiewicz T, Ronning F, Llobet A, Trouw F, Kurita N, Tokiwa Y, Lee Ho, Booth CH, Gardner JS, Bauer ED, Joyce JJ, Zandbergen HW, Movshovich R, Cava RJ, Thompson JD;, Physical review : B : condensed matter and materials physics 84, 075152 (2011). http://doi.org/10.1103/PhysRevB.84.075152
Abstract: We report extensive measurements on a new compound (Yb0.24Sn0.76)Ru that crystallizes in the cubic CsCl structure. Valence-band photoemission (PES) and L3 x-ray absorption show no divalent component in the 4f configuration of Yb. Inelastic neutron scattering (INS) indicates that the eight-fold degenerate J-multiplet of Yb3+ is split by the crystalline electric field (CEF) into a Γ7-doublet ground state and a Γ8 quartet at an excitation energy 20 meV. The magnetic susceptibility can be fit very well by this CEF scheme under the assumption that a Γ6-excited state resides at 32 meV; however, the Γ8/Γ6 transition expected at 12 meV was not observed in the INS. The resistivity follows a Bloch-Grüneisen law shunted by a parallel resistor, as is typical of systems subject to phonon scattering with no apparent magnetic scattering. All of these properties can be understood as representing simple local moment behavior of the trivalent Yb ion. At 1 K there is a peak in specific heat that is too broad to represent a magnetic-phase transition, consistent with absence of magnetic reflections in neutron diffraction. On the other hand this peak also is too narrow to represent the Kondo effect in the Γ7-doublet ground state. On the basis of the field dependence of the specific heat, we argue that antiferromagnetic (AF) short-range order (SRO) (possibly coexisting with Kondo physics) occurs at low temperatures. The long-range magnetic order is suppressed because the Yb site occupancy is below the percolation threshold for this disordered compound.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 8
DOI: 10.1103/PhysRevB.84.075152
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“Electronic reconstruction at n-type SrTiO3/LaAlO3 interfaces”. Verbeeck J, Bals S, Lamoen D, Luysberg M, Huijben M, Rijnders G, Brinkman A, Hilgenkamp H, Blank DHA, Van Tendeloo G, Physical review : B : condensed matter and materials physics 81, 085113 (2010). http://doi.org/10.1103/PhysRevB.81.085113
Abstract: Electron-energy-loss spectroscopy (EELS) is used to investigate single layers of LaAlO3 grown on SrTiO3 having an n-type interface as well as multilayers of LaAlO3 and SrTiO3 in which both n- and p-type interfaces occur. Only minor changes in Ti valence at the n-type interface are observed. This finding seems to contradict earlier experiments for other SrTiO3/LaAlO3 systems where large deviations in Ti valency were assumed to be responsible for the conductivity of these interfaces. Ab initio calculations have been carried out in order to interpret our EELS results. Using the concept of Bader charges, it is demonstrated that the so-called polar discontinuity is mainly resolved by lattice distortions and to a far lesser extent by changes in valency for both single layer and multilayer geometries.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 25
DOI: 10.1103/PhysRevB.81.085113
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“Crosshatching on La0.5Ca0.5MnO3 ultrathin films epitaxially grown on SrTiO3(100)”. Wang Z-H, Lebedev OI, Van Tendeloo G, Cristiani G, Habermeier H-U, Physical review : B : condensed matter and materials physics 77, 1 (2008). http://doi.org/10.1103/PhysRevB.77.115330
Abstract: The morphological evolution in La(0.5)Ca(0.5)MnO(3)/SrTiO(3)(100) ultrathin films has been revealed by atomic force microscopy. It was found that ordered linear defects, which are in 1-2 unit cells high and oriented along the cubic [110] and [100] directions, first appear on the smooth surface of films with a thickness of 10 nm. As the epitaxial growth proceeds, these lines on surface develop into a crosshatch pattern for films with a thickness of 25 nm. Using the results of transmission electron microscopy and electrical measurements, we discuss the interplay between the surface pattern formation, the internal dislocation structure, and the variations in the electrical properties.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 8
DOI: 10.1103/PhysRevB.77.115330
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“Incorporation and localization of substitutional Mn2+ ions in cubic ZnS quantum dots”. Nistor SV, Stefan M, Nistor LC, Goovaerts E, Van Tendeloo G, Physical review : B : condensed matter and materials physics 81, 035336 (2010). http://doi.org/10.1103/PhysRevB.81.035336
Abstract: Multifrequency electron paramagnetic resonance (EPR) and high resolution transmission electron microscopy (HRTEM) investigations were performed on small (2 nm) cubic ZnS nanocrystals (quantum dotsQDs) doped with 0.2% mol Mn2+, self-assembled into a mesoporous structure. The EPR data analysis shows that the substitutional Mn2+ ions are localized at Zn2+ sites subjected to a local axial lattice distortion, resulting in the observed zero-field-splitting parameter |D|=41×10−4 cm−1. The local distortion is attributed to the presence in the second shell of ligands of a stacking fault or twin, which alters the normal stacking sequence of the cubic structure. The HRTEM results confirm the presence of such extended planar defects in a large percentage of the investigated QDs, which makes possible the proposed substitutional Mn2+ impurity ions localization model. Based on these results it is suggested that the high doping levels of Mn2+ ions observed in cubic ZnS and possible in other II-VI semiconductor QDs prepared at low temperatures can be explained by the assistance of the extended lattice defects in the impurities incorporation.
Keywords: A1 Journal article; Nanostructured and organic optical and electronic materials (NANOrOPT); Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 55
DOI: 10.1103/PhysRevB.81.035336
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“Ultralow blocking temperature and breakdown of the giant spin model in Er3+-doped nanoparticles”. van den Heuvel W, Tikhomirov VK, Kirilenko D, Schildermans N, Chibotaru LF, Vanacken J, Gredin P, Mortier M, Van Tendeloo G, Moshchalkov VV, Physical review : B : condensed matter and materials physics 82, 094421 (2010). http://doi.org/10.1103/PhysRevB.82.094421
Abstract: The magnetization of luminescent Er3+-doped PbF2 nanoparticles (formula Er0.3Pb0.7F2.3) has been studied. Despite the high concentration of the doping Er3+ ions and relatively large size (8 nm) of these nanoparticles we have found no deviation between field-cooled and zero-field-cooled magnetization curves down to T=0.35 K, which points out an ultralow blocking temperature for the reversal of magnetization. We also have found strongly deviating magnetization curves M(H/T) for different temperatures T. These results altogether show that the investigated nanoparticles are not superparamagnetic, but rather each Er3+ ion in these nanoparticles is found in a paramagnetic state down to very low temperatures, which implies the breakdown of the Néel-Brown giant spin model in the case of these nanoparticles. Calculations of magnetization within a paramagnetic model of noninteracting Er3+ ions completely support this conclusion. Due to the ultralow blocking temperature, these nanoparticles have a potential for magnetic field-induced nanoscale refrigeration with an option of their optical localization and temperature control.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 11
DOI: 10.1103/PhysRevB.82.094421
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“Observation of cyclotron resonance in an InAs/GaAs wetting layer with shallowly formed quantum dots”. Janssen G, Goovaerts E, Bouwen A, Partoens B, van Daele B, Zurauskiene N, Koenraad PM, Wolter JH, Physical review : B : condensed matter and materials physics 68, 045329 (2003). http://doi.org/10.1103/PhysRevB.68.045329
Keywords: A1 Journal article; Nanostructured and organic optical and electronic materials (NANOrOPT); Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 10
DOI: 10.1103/PhysRevB.68.045329
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“Oscillations of the superconducting temperature induced by quantum well states in thin metallic films: numerical solution of the Bogoliubov-de Gennes equations”. Shanenko AA, Croitoru MD, Peeters FM, Physical review : B : condensed matter and materials physics 75, 014519 (2007). http://doi.org/10.1103/PhysRevB.75.014519
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 85
DOI: 10.1103/PhysRevB.75.014519
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“Dependence of superconducting properties on the size and shape of a nanoscale superconductor: from nanowire to film”. Croitoru MD, Shanenko AA, Peeters FM, Physical review : B : condensed matter and materials physics 76, 024511 (2007). http://doi.org/10.1103/PhysRevB.76.024511
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 54
DOI: 10.1103/PhysRevB.76.024511
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“Procedure to count atoms with trustworthy single-atom sensitivity”. Van Aert S, de Backer A, Martinez GT, Goris B, Bals S, Van Tendeloo G, Rosenauer A, Physical review : B : condensed matter and materials physics 87, 064107 (2013). http://doi.org/10.1103/PhysRevB.87.064107
Abstract: We report a method to reliably count the number of atoms from high-angle annular dark field scanning transmission electron microscopy images. A model-based analysis of the experimental images is used to measure scattering cross sections at the atomic level. The high sensitivity of these measurements in combination with a thorough statistical analysis enables us to count atoms with single-atom sensitivity. The validity of the results is confirmed by means of detailed image simulations. We will show that the method can be applied to nanocrystals of arbitrary shape, size, and atom type without the need for a priori knowledge about the atomic structure.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 106
DOI: 10.1103/PhysRevB.87.064107
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“Using electron vortex beams to determine chirality of crystals in transmission electron microscopy”. Juchtmans R, Béché, A, Abakumov A, Batuk M, Verbeeck J, Physical review : B : condensed matter and materials physics 91, 094112 (2015). http://doi.org/10.1103/PhysRevB.91.094112
Abstract: We investigate electron vortex beams elastically scattered on chiral crystals. After deriving a general expression for the scattering amplitude of a vortex electron, we study its diffraction on point scatterers arranged on a helix. We derive a relation between the handedness of the helix and the topological charge of the electron vortex on one hand and the symmetry of the higher-order Laue zones in the diffraction pattern on the other for kinematically and dynamically scattered electrons. We then extend this to atoms arranged on a helix as found in crystals which belong to chiral space groups and propose a method to determine the handedness of such crystals by looking at the symmetry of the diffraction pattern. In contrast to alternative methods, our technique does not require multiple scattering, which makes it possible to also investigate extremely thin samples in which multiple scattering is suppressed. In order to verify the model, elastic scattering simulations are performed, and an experimental demonstration on Mn2Sb2O7 is given in which we find the sample to belong to the right-handed variant of its enantiomorphic pair. This demonstrates the usefulness of electron vortex beams to reveal the chirality of crystals in a transmission electron microscope and provides the required theoretical basis for further developments in this field.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 54
DOI: 10.1103/PhysRevB.91.094112
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“High resolution electron tomography”. Bals S, Van Aert S, Van Tendeloo G, Current opinion in solid state and materials science 17, 107 (2013). http://doi.org/10.1016/j.cossms.2013.03.001
Abstract: Reaching atomic resolution in 3D has been the ultimate goal in the field of electron tomography for many years. Significant progress, both on the theoretical as well as the experimental side has recently resulted in several exciting examples demonstrating the ability to visualise atoms in 3D. In this paper, we will review the different steps that have pushed the resolution in 3D to the atomic level. A broad range of methodologies and practical examples together with their impact on materials science will be discussed. Finally, we will provide an outlook and will describe future challenges in the field of high resolution electron tomography.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 6.938
Times cited: 24
DOI: 10.1016/j.cossms.2013.03.001
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“Interfacial spin glass state and exchange bias in manganite bilayers with competing magnetic orders”. Ding JF, Lebedev OI, Turner S, Tian YF, Hu WJ, Seo JW, Panagopoulos C, Prellier W, Van Tendeloo G, Wu T, Physical review : B : condensed matter and materials physics 87, 054428 (2013). http://doi.org/10.1103/PhysRevB.87.054428
Abstract: The magnetic properties of manganite bilayers composed of G-type antiferromagnetic (AFM) SrMnO3 and double-exchange ferromagnetic (FM) La0.7Sr0.3MnO3 are studied. A spin-glass state is observed as a result of competing magnetic orders and spin frustration at the La0.7Sr0.3MnO3/SrMnO3 interface. The dependence of the irreversible temperature on the cooling magnetic field follows the Almeida-Thouless line. Although an ideal G-type AFM SrMnO3 is featured with a compensated spin configuration, the bilayers exhibit exchange bias below the spin glass freezing temperature, which is much lower than the Néel temperature of SMO, indicating that the exchange bias is strongly correlated with the spin glass state. The results indicate that the spin frustration that originates from the competition between the AFM super-exchange and the FM double-exchange interactions can induce a strong magnetic anisotropy at the La0.7Sr0.3MnO3/SrMnO3 interface.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 98
DOI: 10.1103/PhysRevB.87.054428
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“Microstructure and interface studies of LaVO3/SrVO3 superlattices”. Boullay P, David A, Sheets WC, Lüders U, Prellier W, Tan H, Verbeeck J, Van Tendeloo G, Gatel C, Vincze G, Radi Z, Physical review : B : condensed matter and materials physics 83, 125403 (2011). http://doi.org/10.1103/PhysRevB.83.125403
Abstract: The structure and interface characteristics of (LaVO3)6m(SrVO3)m superlattices deposited on a (100)-SrTiO3 substrate were studied using transmission electron microscopy (TEM). Cross-section TEM studies revealed that both LaVO3 (LVO) and SrVO3 (SVO) layers are good single-crystal quality and epitaxially grown with respect to the substrate. It is evidenced that LVO layers are made of two orientational variants of a distorted perovskite compatible with bulk LaVO3, while SVO layers suffers from a tetragonal distortion due to the substrate-induced stain. Electron energy loss spectroscopy investigations indicate changes in the fine structure of the V L23 edge, related to a valence change between the LaVO3 and the SrVO3 layers.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 26
DOI: 10.1103/PhysRevB.83.125403
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“Multiple scattering calculations of relativistic electron energy loss spectra”. Jorissen K, Rehr JJ, Verbeeck J, Physical review : B : condensed matter and materials physics 81, 155108 (2010). http://doi.org/10.1103/PhysRevB.81.155108
Abstract: A generalization of the real-space Greens-function approach is presented for ab initio calculations of relativistic electron energy loss spectra (EELS) which are particularly important in anisotropic materials. The approach incorporates relativistic effects in terms of the transition tensor within the dipole-selection rule. In particular, the method accounts for relativistic corrections to the magic angle in orientation resolved EELS experiments. The approach is validated by a study of the graphite C K edge, for which we present an accurate magic angle measurement consistent with the predicted value.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 24
DOI: 10.1103/PhysRevB.81.155108
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“Influence of finite size effects on exchange anisotropy in oxidized Co nanocluster assembled films”. Dobrynin AN, Ievlev DN, Hendrich C, Temst K, Lievens P, Hörmann U, Verbeeck J, Van Tendeloo G, Vantomme A, Physical review : B : condensed matter and materials physics 73, 245416 (2006). http://doi.org/10.1103/PhysRevB.73.245416
Abstract: We compare the magnetic properties of Co cluster assembled films with different degrees of oxidation. Clusters with grain size (2.3 +/- 0.7) nm are produced in a laser vaporization cluster source and soft-landed in ultrahigh vacuum conditions, forming highly porous nanogranular films. After exposure to air for different periods of time, the Co clusters oxidize and the sample may be considered as a thin antiferromagnetic Co oxide matrix containing ferromagnetic Co clusters. Magnetization measurements were performed in a temperature range from 300 down to 5 K, at applied magnetic fields up to 30 kOe. The exchange bias value at 5 K for the strongly oxidized sample is 4.8 kOe against the value of 0.75 kOe for the less oxidized sample. The mean values of the thicknesses of the Co oxide layers are estimated to be 0.6 and 0.3 nm for the more and less oxidized sample, respectively. We propose a method of measuring the exchange bias inducing temperature, i.e., the temperature at which exchange anisotropy is established. We determined the mean inducing temperatures for both samples, which are 55 and 25 K, respectively, for the more and less oxidized samples. Both temperatures are well below the bulk CoO Neel temperature of 292 K. A low value of the inducing temperature of the Co oxide layer is a consequence of its subnanometer thickness, while a large exchange bias value is a consequence of different dimensionality of Co clusters and Co oxide matrix.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 17
DOI: 10.1103/PhysRevB.73.245416
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“Homologous series of layered structures in binary and ternary Bi-Sb-Te-Se systems : ab initio study”. Govaerts K, Sluiter MHF, Partoens B, Lamoen D, Physical review : B : condensed matter and materials physics 89, 054106 (2014). http://doi.org/10.1103/PhysRevB.89.054106
Abstract: In order to account explicitly for the existence of long-periodic layered structures and the strong structural relaxations in the most common binary and ternary alloys of the Bi-Sb-Te-Se system, we have developed a one-dimensional cluster expansion (CE) based on first-principles electronic structure calculations, which accounts for the Bi and Sb bilayer formation. Excellent interlayer distances are obtained with a van der Waals density functional. It is shown that a CE solely based on pair interactions is sufficient to provide an accurate description of the ground-state energies of Bi-Sb-Te-Se binary and ternary systems without making the data set of ab initio calculated structures unreasonably large. For the binary alloys A1−xQx (A=Sb, Bi; Q=Te, Se), a ternary CE yields an almost continuous series of (meta)stable structures consisting of consecutive A bilayers next to consecutive A2Q3 for 0<x<0.6. For x>0.6, the binary alloy segregates into pure Q and A2Q3. The Bi-Sb system is described by a quaternary CE and is found to be an ideal solid solution stabilized by entropic effects at T≠0 K but with an ordered structure of alternating Bi and Sb layers for x=0.5 at T=0 K. A quintuple CE is used for the ternary Bi-Sb-Te system, where stable ternary layered compounds with an arbitrary stacking of Sb2Te3, Bi2Te3, and Te-Bi-Te-Sb-Te quintuple units are found, optionally separated by mixed Bi/Sb bilayers. Electronic properties of the stable compounds were studied taking spin-orbit coupling into account.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 5
DOI: 10.1103/PhysRevB.89.054106
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“Structural phase transition and spontaneous interface reconstruction in La2/3Ca1/3MnO3/BaTiO3 superlattices”. Turner S, Lebedev OI, Verbeeck J, Gehrke K, Moshnyaga V, Van Tendeloo G, Physical review : B : condensed matter and materials physics 87, 035418 (2013). http://doi.org/10.1103/PhysRevB.87.035418
Abstract: (La2/3Ca1/3MnO3)n/(BaTiO3)m (LCMOn/BTOm) superlattices on MgO and SrTiO3 substrates with different layer thicknesses (n = 10, 38, 40 and m = 5, 18, 20) have been grown by metal organic aerosol deposition (MAD) and have been fully characterized down to the atomic scale to study the interface characteristics. Scanning transmission electron microscopy combined with spatially resolved electron energy-loss spectroscopy provides clear evidence for the existence of atomically sharp interfaces in MAD grown films, which exhibit epitaxial growth conditions, a uniform normal strain, and a fully oxidized state. Below a critical layer thickness the LCMO structure is found to change from the bulk Pnma symmetry to a pseudocubic R3̅ c symmetry. An atomically flat interface reconstruction consisting of a single Ca-rich atomic layer is observed on the compressively strained BTO on LCMO interface, which is thought to partially neutralize the total charge from the alternating polar atomic layers in LCMO as well as relieving strain at the interface. No interface reconstruction is observed at the tensile strained LCMO on BTO interface.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 12
DOI: 10.1103/PhysRevB.87.035418
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“Evidence of oxygen-dependent modulation in LuFe2O4”. Bourgeois J, Hervieu M, Poienar M, Abakumov AM, Elkaïm E, Sougrati MT, Porcher F, Damay F, Rouquette J, Van Tendeloo G, Maignan A, Haines J, Martin C;, Physical review : B : condensed matter and materials physics 85, 064102 (2012). http://doi.org/10.1103/PhysRevB.85.064102
Abstract: A polycrystalline sample of LuFe2O4 has been investigated by means of powder synchrotron x-ray and neutron diffraction and transmission electron microscopy (TEM), along with Mössbauer spectroscopy and transport and magnetic properties. A monoclinic distortion is unambiguously evidenced, and the crystal structure is refined in the monoclinic C2/m space group [aM = 5.9563(1) Å, bM = 3.4372(1) Å, cM = 8.6431(1) Å, β = 103.24(1)°]. Along with the previously reported modulations distinctive of the charge-ordering (CO) of the iron species, a new type of incommensurate order is observed, characterized by a vector q⃗1 = α1a⃗M* + γ1c⃗M* (with α1 ≅ 0.55, γ1 ≅ 0.13). In situ heating TEM observations from 300 to 773 K confirm that the satellites associated with q⃗1 vanish completely, only at a temperature significantly higher than the CO temperature. This incommensurate modulation has a displacive character and corresponds primarily to a transverse displacive modulation wave of the Lu cations position, as revealed by the high resolution, high angle annular dark field scanning TEM images and in agreement with synchrotron data refinements. Analyses of vacuum-annealed samples converge toward the hypothesis of a new ordering mechanism, associated with a tiny oxygen deviation from the O4 stoichiometry.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 24
DOI: 10.1103/PhysRevB.85.064102
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“Mapping electronic reconstruction at the metal-insulator interface in LaVO3/SrVO3 heterostructures”. Tan H, Egoavil R, Béché, A, Martinez GT, Van Aert S, Verbeeck J, Van Tendeloo G, Rotella H, Boullay P, Pautrat A, Prellier W, Physical review : B : condensed matter and materials physics 88, 155123 (2013). http://doi.org/10.1103/PhysRevB.88.155123
Abstract: A (LaVO3)6/(SrVO3)(3) superlattice is studied with a combination of sub-A resolved scanning transmission electron microscopy and monochromated electron energy-loss spectroscopy. The V oxidation state is mapped with atomic spatial resolution enabling us to investigate electronic reconstruction at the LaVO3/SrVO3 interfaces. Surprisingly, asymmetric charge distribution is found at adjacent chemically symmetric interfaces. The local structure is proposed and simulated with a double channeling calculation which agrees qualitatively with our experiment. We demonstrate that local strain asymmetry is the likely cause of the electronic asymmetry of the interfaces. The electronic reconstruction at the interfaces extends much further than the chemical composition, varying from 0.5 to 1.2 nm. This distance corresponds to the length of charge transfer previously found in the (LaVO3)./(SrVO3). metal/insulating and the (LaAlO3)./(SrTiO3). insulating/insulating interfaces.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 15
DOI: 10.1103/PhysRevB.88.155123
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“Structure-properties relationship in ferromagnetic superconducting RuSr2GdCu2O8”. Lebedev OI, Van Tendeloo G, Cristiani G, Habermeier H-U, Matveev AT, Physical review : B : condensed matter and materials physics 71, 134523 (2005). http://doi.org/10.1103/PhysRevB.71.134523
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 16
DOI: 10.1103/PhysRevB.71.134523
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“Defect structure of ferromagnetic superconducting RuSr2GdCu2O8”. Lebedev OI, Van Tendeloo G, Attfield JP, McLaughlin AC, Physical review : B : condensed matter and materials physics 73 (2006). http://doi.org/10.1103/PhysRevB.73.224524
Abstract: The structure and defect structure of superconducting ferromagnetic bulk RuSr2GdCu2O8 has been investigated using high-resolution transmission electron microscopy and high-resolution scanning transmission microscopy. Two distinct, but closely related structures, due to ordering of rotated RuO6 octahedra and due to Cu substitution in the Ru-O layer, have been revealed. The structure of Ru1-xSr2GdCu2+xO8-delta can be described as a periodic alteration along the c axis of CuO4 planes and RuO6 octahedra. The unit-cell parameters of this phase are root 2a(p) x root 2a(p) x 2c. The possible influence of this phase and defect structure on the sensitivity of the superconductivity and magnetic properties is discussed. Local defects such as 90 S domain boundaries, (130) antiphase boundaries, and the associated dislocations are analyzed.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 11
DOI: 10.1103/PhysRevB.73.224524
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“Crystal structure, phase transition, and magnetic ordering in perovskitelike Pb2-xBaxFe2O5 solid solutions”. Nikolaev IV, d' Hondt H, Abakumov AM, Hadermann J, Balagurov AM, Bobrikov IA, Sheptyakov DV, Pomjakushin VY, Pokholok KV, Filimonov DS, Van Tendeloo G, Antipov EV, Physical review : B : condensed matter and materials physics 78, 024426 (2008). http://doi.org/10.1103/PhysRevB.78.024426
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 29
DOI: 10.1103/PhysRevB.78.024426
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“Antiferroelectric phase transition in Sr9In(PO4)7”. Stefanovich SY, Belik AA, Azuma M, Takano M, Baryshnikova OV, Morozov VA, Lazoryak BI, Lebedev OI, Van Tendeloo G, Physical review : B : condensed matter and materials physics 70, 172103 (2004). http://doi.org/10.1103/PhysRevB.70.172103
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 17
DOI: 10.1103/PhysRevB.70.172103
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“First-principles study of possible shallow donors in ZnAl2O4 spinel”. Dixit H, Tandon N, Cottenier S, Saniz R, Lamoen D, Partoens B, Physical review : B : condensed matter and materials physics 87, 174101 (2013). http://doi.org/10.1103/PhysRevB.87.174101
Abstract: ZnAl2O4 (gahnite) is a ceramic which is considered a possible transparent conducting oxide (TCO) due to its wide band gap and transparency for UV. Defects play an important role in controlling the conductivity of a TCO material along with the dopant, which is the main source of conductivity in an otherwise insulating oxide. A comprehensive first-principles density functional theory study for point defects in ZnAl2O4 spinel is presented using the Heyd, Scuseria, and Ernzerhof hybrid functional (HSE06) to overcome the band gap problem. We have investigated the formation energies of intrinsic defects which include the Zn, Al, and O vacancy and the antisite defects: Zn at the Al site (ZnAl) and Al at the Zn site (AlZn). The antisite defect AlZn has the lowest formation energy and acts as a shallow donor, indicating possible n-type conductivity in ZnAl2O4 spinel by Al doping.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 50
DOI: 10.1103/PhysRevB.87.174101
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